DE602004009230D1 - Strahlhomogenisierer, Laserbestrahlungsvorrichtung, und Verfahren zur Herstellung einer Halbleiteranordnung - Google Patents

Strahlhomogenisierer, Laserbestrahlungsvorrichtung, und Verfahren zur Herstellung einer Halbleiteranordnung

Info

Publication number
DE602004009230D1
DE602004009230D1 DE602004009230T DE602004009230T DE602004009230D1 DE 602004009230 D1 DE602004009230 D1 DE 602004009230D1 DE 602004009230 T DE602004009230 T DE 602004009230T DE 602004009230 T DE602004009230 T DE 602004009230T DE 602004009230 D1 DE602004009230 D1 DE 602004009230D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
laser irradiation
irradiation apparatus
beam homogenizer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004009230T
Other languages
English (en)
Other versions
DE602004009230T2 (de
Inventor
Koichiro Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE602004009230D1 publication Critical patent/DE602004009230D1/de
Application granted granted Critical
Publication of DE602004009230T2 publication Critical patent/DE602004009230T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21K—MAKING FORGED OR PRESSED METAL PRODUCTS, e.g. HORSE-SHOES, RIVETS, BOLTS OR WHEELS
    • B21K1/00—Making machine elements
    • B21K1/06—Making machine elements axles or shafts
    • B21K1/12—Making machine elements axles or shafts of specially-shaped cross-section
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0028—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed refractive and reflective surfaces, e.g. non-imaging catadioptric systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
    • B21J5/00—Methods for forging, hammering, or pressing; Special equipment or accessories therefor
    • B21J5/02—Die forging; Trimming by making use of special dies ; Punching during forging
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
    • B21J5/00—Methods for forging, hammering, or pressing; Special equipment or accessories therefor
    • B21J5/06—Methods for forging, hammering, or pressing; Special equipment or accessories therefor for performing particular operations
    • B21J5/12—Forming profiles on internal or external surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21K—MAKING FORGED OR PRESSED METAL PRODUCTS, e.g. HORSE-SHOES, RIVETS, BOLTS OR WHEELS
    • B21K27/00—Handling devices, e.g. for feeding, aligning, discharging, Cutting-off means; Arrangement thereof
    • B21K27/06—Cutting-off means; Arrangements thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/0665—Shaping the laser beam, e.g. by masks or multi-focusing by beam condensation on the workpiece, e.g. for focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0052—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode
    • G02B19/0057—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode in the form of a laser diode array, e.g. laser diode bar
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0911—Anamorphotic systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0955—Lenses
    • G02B27/0966—Cylindrical lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0977—Reflective elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0994—Fibers, light pipes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
DE602004009230T 2003-03-11 2004-03-11 Strahlhomogenisierer, Laserbestrahlungsvorrichtung, und Verfahren zur Herstellung einer Halbleiteranordnung Expired - Lifetime DE602004009230T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003065682 2003-03-11
JP2003065682 2003-03-11

Publications (2)

Publication Number Publication Date
DE602004009230D1 true DE602004009230D1 (de) 2007-11-15
DE602004009230T2 DE602004009230T2 (de) 2008-02-28

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DE602004009230T Expired - Lifetime DE602004009230T2 (de) 2003-03-11 2004-03-11 Strahlhomogenisierer, Laserbestrahlungsvorrichtung, und Verfahren zur Herstellung einer Halbleiteranordnung

Country Status (4)

Country Link
US (2) US7327916B2 (de)
EP (1) EP1457806B1 (de)
KR (1) KR100998162B1 (de)
DE (1) DE602004009230T2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI332682B (en) * 2002-09-19 2010-11-01 Semiconductor Energy Lab Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device
SG137674A1 (en) * 2003-04-24 2007-12-28 Semiconductor Energy Lab Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US7245802B2 (en) * 2003-08-04 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus and method for manufacturing semiconductor device
US7169630B2 (en) 2003-09-30 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
JP4660746B2 (ja) * 2004-08-03 2011-03-30 ソニー株式会社 レーザー照射装置
US7387954B2 (en) * 2004-10-04 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US7664365B2 (en) * 2004-10-27 2010-02-16 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same
US7129440B2 (en) * 2004-11-12 2006-10-31 Applied Materials, Inc. Single axis light pipe for homogenizing slow axis of illumination systems based on laser diodes
US7422988B2 (en) * 2004-11-12 2008-09-09 Applied Materials, Inc. Rapid detection of imminent failure in laser thermal processing of a substrate
US7438468B2 (en) * 2004-11-12 2008-10-21 Applied Materials, Inc. Multiple band pass filtering for pyrometry in laser based annealing systems
US7910499B2 (en) * 2004-11-12 2011-03-22 Applied Materials, Inc. Autofocus for high power laser diode based annealing system
WO2006062212A1 (en) * 2004-12-06 2006-06-15 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic apparatus using the same
US20070153392A1 (en) * 2005-01-21 2007-07-05 Meritt Reynolds Apparatus and method for illumination of light valves
US7355800B2 (en) 2005-02-07 2008-04-08 Coherent, Inc. Apparatus for projecting a line of light from a diode-laser array
US7433568B2 (en) * 2005-03-31 2008-10-07 Semiconductor Energy Laboratory Co., Ltd. Optical element and light irradiation apparatus
US7135392B1 (en) 2005-07-20 2006-11-14 Applied Materials, Inc. Thermal flux laser annealing for ion implantation of semiconductor P-N junctions
KR100723935B1 (ko) * 2005-10-18 2007-05-31 주식회사 한광옵토 레이저 패턴 가공 장치
WO2007072837A1 (en) * 2005-12-20 2007-06-28 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
JP2007214527A (ja) * 2006-01-13 2007-08-23 Ihi Corp レーザアニール方法およびレーザアニール装置
US7674999B2 (en) 2006-08-23 2010-03-09 Applied Materials, Inc. Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing system
DE102007001639A1 (de) * 2006-09-19 2008-04-03 Rofin-Sinar Laser Gmbh Laseranordnung für die Bearbeitung eines Werkstückes
US7659187B2 (en) * 2006-11-03 2010-02-09 Applied Materials, Inc. Method of forming PN junctions including a post-ion implant dynamic surface anneal process with minimum interface trap density at the gate insulator-silicon interface
US8237085B2 (en) * 2006-11-17 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and laser irradiation method
DE102007009318B4 (de) * 2007-02-22 2010-04-15 Coherent Gmbh Laseranordnung mit einem Laser zur Erzeugung eines hochenergetischen Laserstrahls
US8164739B2 (en) * 2007-09-28 2012-04-24 Asml Holding N.V. Controlling fluctuations in pointing, positioning, size or divergence errors of a beam of light for optical apparatus
JP6291483B2 (ja) 2012-05-31 2018-03-14 コーニング インコーポレイテッド 単軸光ホモジナイザーを組み込む光画像形成システム
CN102817079B (zh) * 2012-08-10 2015-08-26 四川大学 激光辐照制备稀土离子掺杂石榴石结构纳米晶体的方法
US10012769B2 (en) * 2013-03-06 2018-07-03 Element Six Technologies Limited Synthetic diamond optical elements
DE102018211409B4 (de) * 2018-07-10 2021-02-18 Laserline GmbH Strahlformende Laseroptik und Lasersystem

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US582551A (en) * 1897-05-11 Sulky-plow
GB2044948B (en) 1979-02-27 1983-10-05 Boc Ltd Power density of a laser beam heater
US4744615A (en) 1986-01-29 1988-05-17 International Business Machines Corporation Laser beam homogenizer
US4793694A (en) 1986-04-23 1988-12-27 Quantronix Corporation Method and apparatus for laser beam homogenization
US4830447A (en) * 1987-02-13 1989-05-16 Fuji Photo Film Co., Ltd. Optical wavelength conversion device
DK160357C (da) 1987-12-08 1991-08-12 Flemming Olsen Optiksystem til lasermaerkning
JPH02175090A (ja) 1988-12-27 1990-07-06 Isamu Miyamoto レーザビーム成形装置
US5303084A (en) * 1991-08-27 1994-04-12 Kaman Aerospace Corporation Laser light beam homogenizer and imaging lidar system incorporating same
US5224200A (en) 1991-11-27 1993-06-29 The United States Of America As Represented By The Department Of Energy Coherence delay augmented laser beam homogenizer
JPH0667060A (ja) 1992-08-20 1994-03-11 Nippon Sheet Glass Co Ltd 光導波路と光ファイバの接続構造
US5416881A (en) 1992-08-20 1995-05-16 Nippon Sheet Glass Co., Ltd. Optical fiber and optical waveguide connecting device
US5285509A (en) * 1992-12-18 1994-02-08 Hughes Aircraft Company Coupler for waveguides of differing cross section
GB9324589D0 (en) 1993-11-30 1994-01-19 Univ Southampton Beam shaping device
DE4429913C1 (de) 1994-08-23 1996-03-21 Fraunhofer Ges Forschung Vorrichtung und Verfahren zum Plattieren
JPH08238585A (ja) 1995-03-01 1996-09-17 Toshiba Corp レーザ加工装置
FR2732094A1 (fr) 1995-03-22 1996-09-27 Philips Eclairage Generateur de lumiere pour fibres optiques
JPH08338962A (ja) 1995-06-13 1996-12-24 Toshiba Corp ビームホモジナイザ及びレーザ加工装置
US6078652A (en) * 1995-07-21 2000-06-20 Call Manage, Ltd. Least cost routing system
JP3917231B2 (ja) 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
JPH09234579A (ja) 1996-02-28 1997-09-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
JPH10253916A (ja) 1997-03-10 1998-09-25 Semiconductor Energy Lab Co Ltd レーザー光学装置
JPH10258383A (ja) 1997-03-14 1998-09-29 Mitsubishi Heavy Ind Ltd 線状レーザビーム光学系
JP4059952B2 (ja) 1997-03-27 2008-03-12 株式会社半導体エネルギー研究所 レーザー光照射方法
JP4086932B2 (ja) 1997-04-17 2008-05-14 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー処理方法
JP3770999B2 (ja) 1997-04-21 2006-04-26 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー照射方法
JP3462053B2 (ja) 1997-09-30 2003-11-05 株式会社半導体エネルギー研究所 ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法および半導体デバイス
JPH11186189A (ja) 1997-12-17 1999-07-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
KR100433901B1 (ko) 1998-02-21 2004-11-06 삼성전자주식회사 이동통신시스템의시간스위칭송신다이버시티장치
US6393042B1 (en) 1999-03-08 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus
JP3562389B2 (ja) 1999-06-25 2004-09-08 三菱電機株式会社 レーザ熱処理装置
JP4748836B2 (ja) 1999-08-13 2011-08-17 株式会社半導体エネルギー研究所 レーザ照射装置
JP4514861B2 (ja) 1999-11-29 2010-07-28 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法および半導体装置の作製方法
US6573162B2 (en) 1999-12-24 2003-06-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method of fabricating a semiconductor device
JP4637376B2 (ja) 2000-02-02 2011-02-23 株式会社半導体エネルギー研究所 レーザ照射装置及び半導体装置の作製方法
US6856630B2 (en) 2000-02-02 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, semiconductor device, and method of fabricating the semiconductor device
JP2002174767A (ja) 2000-12-08 2002-06-21 Mitsubishi Electric Corp レーザ処理用のレーザ光学系
JP4059623B2 (ja) 2000-12-15 2008-03-12 株式会社リコー 照明装置、及び均一照明装置
US6856727B2 (en) * 2001-03-02 2005-02-15 Wavien, Inc. Coupling of light from a non-circular light source
US6738396B2 (en) * 2001-07-24 2004-05-18 Gsi Lumonics Ltd. Laser based material processing methods and scalable architecture for material processing
US6785304B2 (en) * 2001-07-24 2004-08-31 Gsi Lumonics, Inc. Waveguide device with mode control and pump light confinement and method of using same
TW589667B (en) 2001-09-25 2004-06-01 Sharp Kk Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof
JP3903761B2 (ja) 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
TWI332682B (en) 2002-09-19 2010-11-01 Semiconductor Energy Lab Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device
SG137674A1 (en) 2003-04-24 2007-12-28 Semiconductor Energy Lab Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US7245802B2 (en) 2003-08-04 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus and method for manufacturing semiconductor device
US7169630B2 (en) 2003-09-30 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device

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EP1457806B1 (de) 2007-10-03
US20100284650A1 (en) 2010-11-11
KR100998162B1 (ko) 2010-12-06
US20040179807A1 (en) 2004-09-16
KR20040080369A (ko) 2004-09-18
US7327916B2 (en) 2008-02-05
EP1457806A3 (de) 2005-04-06
US7899282B2 (en) 2011-03-01
DE602004009230T2 (de) 2008-02-28

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