DE602005017217D1 - Laserbestrahlungsmethode, Laserbestrahlungsvorrichtung und Verfahren zur Herstellung einer kristallinen Halbleiter-Schicht - Google Patents
Laserbestrahlungsmethode, Laserbestrahlungsvorrichtung und Verfahren zur Herstellung einer kristallinen Halbleiter-SchichtInfo
- Publication number
- DE602005017217D1 DE602005017217D1 DE602005017217T DE602005017217T DE602005017217D1 DE 602005017217 D1 DE602005017217 D1 DE 602005017217D1 DE 602005017217 T DE602005017217 T DE 602005017217T DE 602005017217 T DE602005017217 T DE 602005017217T DE 602005017217 D1 DE602005017217 D1 DE 602005017217D1
- Authority
- DE
- Germany
- Prior art keywords
- laser irradiation
- producing
- semiconductor layer
- crystalline semiconductor
- irradiation apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K15/00—Electron-beam welding or cutting
- B23K15/0046—Welding
- B23K15/0093—Welding characterised by the properties of the materials to be welded
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K15/00—Electron-beam welding or cutting
- B23K15/10—Non-vacuum electron beam-welding or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0732—Shaping the laser spot into a rectangular shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0738—Shaping the laser spot into a linear shape
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0927—Systems for changing the beam intensity distribution, e.g. Gaussian to top-hat
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
- G02B27/0955—Lenses
- G02B27/0961—Lens arrays
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
- G02B27/0955—Lenses
- G02B27/0966—Cylindrical lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0062—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004145612A JP4579575B2 (ja) | 2004-05-14 | 2004-05-14 | レーザ照射方法及びレーザ照射装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005017217D1 true DE602005017217D1 (de) | 2009-12-03 |
Family
ID=34935560
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005017217T Active DE602005017217D1 (de) | 2004-05-14 | 2005-04-21 | Laserbestrahlungsmethode, Laserbestrahlungsvorrichtung und Verfahren zur Herstellung einer kristallinen Halbleiter-Schicht |
Country Status (5)
Country | Link |
---|---|
US (4) | US7595932B2 (de) |
EP (2) | EP2113805B1 (de) |
JP (1) | JP4579575B2 (de) |
CN (1) | CN100483180C (de) |
DE (1) | DE602005017217D1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4579575B2 (ja) * | 2004-05-14 | 2010-11-10 | 株式会社半導体エネルギー研究所 | レーザ照射方法及びレーザ照射装置 |
EP1708008B1 (de) * | 2005-04-01 | 2011-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Strahlhomogenisator und Laserbestrahlungsvorrichtung |
WO2007049525A1 (en) | 2005-10-26 | 2007-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and manufacturing method of semiconductor device |
KR20090076102A (ko) * | 2008-01-07 | 2009-07-13 | 삼성전자주식회사 | 다채널용 광픽업 및 이를 적용한 다채널 광 기록/재생장치 |
KR102152641B1 (ko) * | 2013-10-31 | 2020-09-08 | 엘지전자 주식회사 | 이동 로봇 |
CN103676498B (zh) * | 2013-11-18 | 2017-04-05 | 中国科学院上海光学精密机械研究所 | 光刻机光瞳整形单元结构及其衍射光学元件设计方法 |
KR101621386B1 (ko) * | 2014-05-21 | 2016-05-31 | 한양대학교 산학협력단 | 레이저 표면파 발생장치 및 이의 레이저 표면파 발생방법 |
US9953111B2 (en) * | 2014-06-06 | 2018-04-24 | Matterport, Inc. | Semantic understanding of 3D data |
CN104360485B (zh) * | 2014-11-04 | 2017-02-15 | 北京凌云光技术有限责任公司 | 线性激光光源及图像获取系统 |
JP6527725B2 (ja) * | 2015-03-13 | 2019-06-05 | 藤垣 元治 | 三次元形状測定装置 |
KR102582652B1 (ko) * | 2016-12-21 | 2023-09-25 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
EP3712686A1 (de) * | 2019-03-18 | 2020-09-23 | LIMO Display GmbH | Vorrichtung zur erzeugung einer linearen intensitätsverteilung in einer arbeitsebene |
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JPS61156218A (ja) * | 1984-12-28 | 1986-07-15 | Nec Corp | 二次元射出レンズ |
US4769750A (en) * | 1985-10-18 | 1988-09-06 | Nippon Kogaku K. K. | Illumination optical system |
US4951274A (en) * | 1987-01-23 | 1990-08-21 | Nec Corporation | Magneto-optical head capable of separating beams for reading recorded information and servo information by use of one optical element |
US5153773A (en) * | 1989-06-08 | 1992-10-06 | Canon Kabushiki Kaisha | Illumination device including amplitude-division and beam movements |
JPH06124913A (ja) * | 1992-06-26 | 1994-05-06 | Semiconductor Energy Lab Co Ltd | レーザー処理方法 |
US6300176B1 (en) | 1994-07-22 | 2001-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method |
JP3917231B2 (ja) | 1996-02-06 | 2007-05-23 | 株式会社半導体エネルギー研究所 | レーザー照射装置およびレーザー照射方法 |
JPH09234579A (ja) | 1996-02-28 | 1997-09-09 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
JP3813269B2 (ja) | 1996-11-01 | 2006-08-23 | 株式会社半導体エネルギー研究所 | レーザー照射システム |
JP4056577B2 (ja) | 1997-02-28 | 2008-03-05 | 株式会社半導体エネルギー研究所 | レーザー照射方法 |
JPH10244392A (ja) | 1997-03-04 | 1998-09-14 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
JPH10253916A (ja) | 1997-03-10 | 1998-09-25 | Semiconductor Energy Lab Co Ltd | レーザー光学装置 |
JP4059952B2 (ja) | 1997-03-27 | 2008-03-12 | 株式会社半導体エネルギー研究所 | レーザー光照射方法 |
JP4086932B2 (ja) | 1997-04-17 | 2008-05-14 | 株式会社半導体エネルギー研究所 | レーザー照射装置及びレーザー処理方法 |
JP3770999B2 (ja) | 1997-04-21 | 2006-04-26 | 株式会社半導体エネルギー研究所 | レーザー照射装置及びレーザー照射方法 |
JP3484481B2 (ja) * | 1997-06-19 | 2004-01-06 | 住友重機械工業株式会社 | ビームホモジナイザ及びそれを用いた半導体薄膜の製造方法 |
JPH1184418A (ja) * | 1997-09-08 | 1999-03-26 | Sanyo Electric Co Ltd | 表示装置 |
JP3462053B2 (ja) | 1997-09-30 | 2003-11-05 | 株式会社半導体エネルギー研究所 | ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法および半導体デバイス |
US6246524B1 (en) | 1998-07-13 | 2001-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device |
JP2000111714A (ja) * | 1998-09-30 | 2000-04-21 | Konica Corp | ソフトフォーカスフィルタおよびソフトフォーカスフィルタユニット |
EP1744349A3 (de) | 1998-10-05 | 2007-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Laserbestrahlungsvorrichtung, Laserbestrahlungsverfahren, Strahlhomogenisierer und Herstellungsverfahren für ein Halbleiterbauelement |
JP4588153B2 (ja) * | 1999-03-08 | 2010-11-24 | 株式会社半導体エネルギー研究所 | レーザー照射装置 |
US6393042B1 (en) * | 1999-03-08 | 2002-05-21 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer and laser irradiation apparatus |
DE60045653D1 (de) | 1999-08-13 | 2011-04-07 | Semiconductor Energy Lab | Laserbestrahlungsgerät |
US6567219B1 (en) | 1999-08-13 | 2003-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus |
US6548370B1 (en) | 1999-08-18 | 2003-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of crystallizing a semiconductor layer by applying laser irradiation that vary in energy to its top and bottom surfaces |
US6524877B1 (en) * | 1999-10-26 | 2003-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and method of fabricating the same |
US6573162B2 (en) | 1999-12-24 | 2003-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and method of fabricating a semiconductor device |
US6856630B2 (en) | 2000-02-02 | 2005-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus, semiconductor device, and method of fabricating the semiconductor device |
US6373633B1 (en) * | 2000-07-06 | 2002-04-16 | Mems Optical, Llc | Shaping irradiance profiles using optical elements with positive and negative optical powers |
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JP3605047B2 (ja) * | 2001-05-22 | 2004-12-22 | キヤノン株式会社 | 照明装置、露光装置、デバイス製造方法及びデバイス |
TW558861B (en) | 2001-06-15 | 2003-10-21 | Semiconductor Energy Lab | Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device |
US6646807B2 (en) * | 2001-06-19 | 2003-11-11 | Rohm Co., Ltd. | Lens array unit and process for making lens array |
DE10139355A1 (de) | 2001-08-17 | 2003-02-27 | Lissotschenko Vitalij | Anordnung und Vorrichtung zur optischen Strahlhomogenisierung |
US7372630B2 (en) | 2001-08-17 | 2008-05-13 | Semiconductor Energy Laboratory Co., Ltd. | Laser, irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
JP3977038B2 (ja) | 2001-08-27 | 2007-09-19 | 株式会社半導体エネルギー研究所 | レーザ照射装置およびレーザ照射方法 |
TWI279052B (en) | 2001-08-31 | 2007-04-11 | Semiconductor Energy Lab | Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device |
US7112517B2 (en) | 2001-09-10 | 2006-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Laser treatment device, laser treatment method, and semiconductor device fabrication method |
US7026227B2 (en) | 2001-11-16 | 2006-04-11 | Semiconductor Energy Laboratory Co., Ltd. | Method of irradiating a laser beam, and method of fabricating semiconductor devices |
JP2003255262A (ja) * | 2002-03-05 | 2003-09-10 | Tokyo Instruments Inc | フェムト秒レーザーを用いた特殊光学系 |
JP2004066327A (ja) * | 2002-08-09 | 2004-03-04 | Tdk Corp | レーザ加工装置、加工方法、および当該加工方法を用いた回路基板の製造方法 |
IL151504A (en) * | 2002-08-27 | 2006-10-31 | Thermion Ltd | Inprovements in thermostat for water boiler |
TWI332682B (en) | 2002-09-19 | 2010-11-01 | Semiconductor Energy Lab | Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device |
US7259082B2 (en) | 2002-10-03 | 2007-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
JP2004128421A (ja) | 2002-10-07 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法 |
SG137674A1 (en) | 2003-04-24 | 2007-12-28 | Semiconductor Energy Lab | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device |
US7245802B2 (en) | 2003-08-04 | 2007-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Beam homogenizer, laser irradiation apparatus and method for manufacturing semiconductor device |
US7450307B2 (en) | 2003-09-09 | 2008-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
JP4579575B2 (ja) * | 2004-05-14 | 2010-11-10 | 株式会社半導体エネルギー研究所 | レーザ照射方法及びレーザ照射装置 |
-
2004
- 2004-05-14 JP JP2004145612A patent/JP4579575B2/ja not_active Expired - Fee Related
-
2005
- 2005-04-21 DE DE602005017217T patent/DE602005017217D1/de active Active
- 2005-04-21 EP EP09010674A patent/EP2113805B1/de not_active Not-in-force
- 2005-04-21 EP EP05008796A patent/EP1596241B1/de not_active Not-in-force
- 2005-05-04 US US11/120,990 patent/US7595932B2/en active Active
- 2005-05-16 CN CNB2005100726071A patent/CN100483180C/zh not_active Expired - Fee Related
-
2009
- 2009-08-05 US US12/536,053 patent/US8045271B2/en not_active Expired - Fee Related
-
2011
- 2011-08-24 US US13/216,669 patent/US9387553B2/en not_active Expired - Fee Related
-
2016
- 2016-07-05 US US15/202,022 patent/US10369658B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP4579575B2 (ja) | 2010-11-10 |
US20050254395A1 (en) | 2005-11-17 |
US7595932B2 (en) | 2009-09-29 |
US20160311057A1 (en) | 2016-10-27 |
US20090291569A1 (en) | 2009-11-26 |
JP2005327942A (ja) | 2005-11-24 |
US8045271B2 (en) | 2011-10-25 |
US10369658B2 (en) | 2019-08-06 |
US9387553B2 (en) | 2016-07-12 |
EP1596241A1 (de) | 2005-11-16 |
CN1696763A (zh) | 2005-11-16 |
EP2113805A1 (de) | 2009-11-04 |
EP2113805B1 (de) | 2012-06-27 |
US20110304920A1 (en) | 2011-12-15 |
EP1596241B1 (de) | 2009-10-21 |
CN100483180C (zh) | 2009-04-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |