DE602004008037D1 - Elektrostatische bond-einspannvorrichtung mit integrierter hochfrequenzelektrode und thermostatischen mitteln - Google Patents

Elektrostatische bond-einspannvorrichtung mit integrierter hochfrequenzelektrode und thermostatischen mitteln

Info

Publication number
DE602004008037D1
DE602004008037D1 DE602004008037T DE602004008037T DE602004008037D1 DE 602004008037 D1 DE602004008037 D1 DE 602004008037D1 DE 602004008037 T DE602004008037 T DE 602004008037T DE 602004008037 T DE602004008037 T DE 602004008037T DE 602004008037 D1 DE602004008037 D1 DE 602004008037D1
Authority
DE
Germany
Prior art keywords
thermostatic
agents
clamping device
frequency electrode
integrated high
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004008037T
Other languages
English (en)
Other versions
DE602004008037T2 (de
Inventor
Yvon Pellegrin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semco Engineering SA
Original Assignee
Semco Engineering SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semco Engineering SA filed Critical Semco Engineering SA
Publication of DE602004008037D1 publication Critical patent/DE602004008037D1/de
Application granted granted Critical
Publication of DE602004008037T2 publication Critical patent/DE602004008037T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
DE602004008037T 2003-02-05 2004-02-05 Elektrostatische bond-einspannvorrichtung mit integrierter hochfrequenzelektrode und thermostatischen mitteln Expired - Lifetime DE602004008037T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0301323A FR2850790B1 (fr) 2003-02-05 2003-02-05 Semelle de collage electrostatique avec electrode radiofrequence et moyens thermostatiques integres
FR0301323 2003-02-05
PCT/EP2004/050083 WO2004070829A1 (fr) 2003-02-05 2004-02-05 Semelle de collage electrostatique avec electrode radiofrequence et moyens thermostatiques integres

Publications (2)

Publication Number Publication Date
DE602004008037D1 true DE602004008037D1 (de) 2007-09-20
DE602004008037T2 DE602004008037T2 (de) 2008-04-30

Family

ID=32696374

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004008037T Expired - Lifetime DE602004008037T2 (de) 2003-02-05 2004-02-05 Elektrostatische bond-einspannvorrichtung mit integrierter hochfrequenzelektrode und thermostatischen mitteln

Country Status (8)

Country Link
US (1) US20060164785A1 (de)
EP (1) EP1595284B1 (de)
JP (1) JP2006517341A (de)
AT (1) ATE369625T1 (de)
CA (1) CA2514616A1 (de)
DE (1) DE602004008037T2 (de)
FR (1) FR2850790B1 (de)
WO (1) WO2004070829A1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5557164B2 (ja) * 2010-03-24 2014-07-23 Ｔｏｔｏ株式会社 静電チャック
US8946058B2 (en) 2011-03-14 2015-02-03 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US9105705B2 (en) 2011-03-14 2015-08-11 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8802545B2 (en) 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
US9090046B2 (en) 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
US9604249B2 (en) 2012-07-26 2017-03-28 Applied Materials, Inc. Innovative top-coat approach for advanced device on-wafer particle performance
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
US9916998B2 (en) 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer
US9685356B2 (en) * 2012-12-11 2017-06-20 Applied Materials, Inc. Substrate support assembly having metal bonded protective layer
US8941969B2 (en) 2012-12-21 2015-01-27 Applied Materials, Inc. Single-body electrostatic chuck
US9358702B2 (en) 2013-01-18 2016-06-07 Applied Materials, Inc. Temperature management of aluminium nitride electrostatic chuck
US9669653B2 (en) 2013-03-14 2017-06-06 Applied Materials, Inc. Electrostatic chuck refurbishment
US9887121B2 (en) 2013-04-26 2018-02-06 Applied Materials, Inc. Protective cover for electrostatic chuck
US9666466B2 (en) 2013-05-07 2017-05-30 Applied Materials, Inc. Electrostatic chuck having thermally isolated zones with minimal crosstalk
US9865434B2 (en) 2013-06-05 2018-01-09 Applied Materials, Inc. Rare-earth oxide based erosion resistant coatings for semiconductor application
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
EP3158581A1 (de) 2014-06-17 2017-04-26 Evatec AG Elektrostatisches spannfutter mit hochfrequenz-shunt
US10020218B2 (en) 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
US11047035B2 (en) 2018-02-23 2021-06-29 Applied Materials, Inc. Protective yttria coating for semiconductor equipment parts

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3157551B2 (ja) * 1990-07-20 2001-04-16 東京エレクトロン株式会社 被処理体用載置装置及びそれを用いた処理装置
EP0493089B1 (de) * 1990-12-25 1998-09-16 Ngk Insulators, Ltd. Heizungsapparat für eine Halbleiterscheibe und Verfahren zum Herstellen desselben
JP3271352B2 (ja) * 1993-01-13 2002-04-02 ソニー株式会社 静電チャック及びその作製方法並びに基板処理装置及び基板搬送装置
JPH08330402A (ja) * 1995-03-30 1996-12-13 Ngk Insulators Ltd 半導体ウエハー保持装置
JPH09172056A (ja) * 1995-12-20 1997-06-30 Souzou Kagaku:Kk 半導体基板のプラズマ処理装置
JPH09213777A (ja) * 1996-01-31 1997-08-15 Kyocera Corp 静電チャック
US5754391A (en) * 1996-05-17 1998-05-19 Saphikon Inc. Electrostatic chuck
JPH11354504A (ja) * 1998-06-08 1999-12-24 Sony Corp ガラス基板処理装置
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
TW492075B (en) * 1999-04-06 2002-06-21 Tokyo Electron Ltd Electrode, wafer stage, plasma device, method of manufacturing electrode and wafer stage
US20020036881A1 (en) * 1999-05-07 2002-03-28 Shamouil Shamouilian Electrostatic chuck having composite base and method
US6490146B2 (en) * 1999-05-07 2002-12-03 Applied Materials Inc. Electrostatic chuck bonded to base with a bond layer and method
US6632512B1 (en) * 1999-11-10 2003-10-14 Ibiden Co., Ltd. Ceramic substrate
JP2002057207A (ja) * 2000-01-20 2002-02-22 Sumitomo Electric Ind Ltd 半導体製造装置用ウェハ保持体およびその製造方法ならびに半導体製造装置
JP3492325B2 (ja) * 2000-03-06 2004-02-03 キヤノン株式会社 画像表示装置の製造方法
JP2001253777A (ja) * 2000-03-13 2001-09-18 Ibiden Co Ltd セラミック基板
US6444957B1 (en) * 2000-04-26 2002-09-03 Sumitomo Osaka Cement Co., Ltd Heating apparatus
TWI254403B (en) * 2000-05-19 2006-05-01 Ngk Insulators Ltd Electrostatic clamper, and electrostatic attracting structures
JP2002141257A (ja) * 2000-05-24 2002-05-17 Ibiden Co Ltd 半導体製造・検査装置用セラミックヒータ
JP2002016005A (ja) * 2000-06-29 2002-01-18 Sumitomo Electric Ind Ltd 半導体製造装置用電極端子接合セラミックス部材及びその製造方法
JP2002025913A (ja) * 2000-07-04 2002-01-25 Sumitomo Electric Ind Ltd 半導体製造装置用サセプタとそれを用いた半導体製造装置
US6646233B2 (en) * 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
US6921724B2 (en) * 2002-04-02 2005-07-26 Lam Research Corporation Variable temperature processes for tunable electrostatic chuck
JP4451098B2 (ja) * 2002-08-22 2010-04-14 住友大阪セメント株式会社 サセプタ装置

Also Published As

Publication number Publication date
ATE369625T1 (de) 2007-08-15
FR2850790B1 (fr) 2005-04-08
JP2006517341A (ja) 2006-07-20
CA2514616A1 (fr) 2004-08-19
DE602004008037T2 (de) 2008-04-30
WO2004070829A1 (fr) 2004-08-19
EP1595284B1 (de) 2007-08-08
FR2850790A1 (fr) 2004-08-06
US20060164785A1 (en) 2006-07-27
EP1595284A1 (de) 2005-11-16

Similar Documents

Publication Publication Date Title
DE602004008037D1 (de) Elektrostatische bond-einspannvorrichtung mit integrierter hochfrequenzelektrode und thermostatischen mitteln
ATE540960T1 (de) Organosilane und damit gebundenes substrat
TW200619677A (en) Micro oscillating element
DE60136940D1 (de) Elektrostatischer scheibenhalter mit porösen bereichen
TW200721547A (en) Light emitting diode and method for manufacturing the same
WO2007130398A3 (en) Power terminals for ceramic heater and method of making the same
ATE414992T1 (de) Elektroosmotische pumpen und mikrokanäle
ATE496104T1 (de) B-zustandsklebstoff für die chipverklebung
TW200641973A (en) Bonding method and bonding apparatus
DE60107919D1 (de) Keramisches Heizelement zum Erwärmen von Wafern
BRPI0412402A (pt) polipeptìdeos de amilase termoestáveis, ácidos nucléicos codificando esses polipeptìdeos e seus usos
DK1267869T3 (da) Metabotrope glutamatreceptorantagonister til behandling af tolerance og afhængighed
TW200512807A (en) Substrate heater and fabrication method for the same
CN110310947B (zh) 一种具有提示功能的uv led全无机封装结构
DK1381115T3 (da) Trykkontakteret effekthalvlederrelæ
DE60332711D1 (de) Neue insektizide proteine von bazillus thuringiensis
DE602004029915D1 (de) Substrat zur bauelement-bondierung, bauelement-bondiertes substrat und herstellungsverfahren dafür
TW200715902A (en) Ceramic member, ceramic heater, substrate placing mechanism, substrate processing apparatus and method for manufacturing ceramic member
DE60210900D1 (de) Prüfschaltung und integrierte Halbleiterschaltung zur Durchführung der Überprüfung von Knotenverbindungen
KR102331072B1 (ko) 웨이퍼 지지대
TW200512904A (en) Method for manufacturing semiconductor device
ATE495543T1 (de) Säulensaugkopf
WO2002068348A8 (en) Devices for glass melt delivery and methods for using them
DE60045223D1 (de) Wafer poliermaschinentisch, wafer polierverfahren und halbleiterschleife herstellungsverfahren
CN206790469U (zh) 一种温补石英晶体谐振器

Legal Events

Date Code Title Description
8364 No opposition during term of opposition