JP2006517341A - 高周波電極および温度調節手段が組込まれた静電チャック - Google Patents
高周波電極および温度調節手段が組込まれた静電チャック Download PDFInfo
- Publication number
- JP2006517341A JP2006517341A JP2006502004A JP2006502004A JP2006517341A JP 2006517341 A JP2006517341 A JP 2006517341A JP 2006502004 A JP2006502004 A JP 2006502004A JP 2006502004 A JP2006502004 A JP 2006502004A JP 2006517341 A JP2006517341 A JP 2006517341A
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- JP
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- Prior art keywords
- ceramic body
- lower ceramic
- pedestal
- electrostatic chuck
- chuck according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
Abstract
Description
− 処理されるべき基板を担持するのに適した上方セラミック体、
− 加熱用構成要素および高周波電極を担持する下方セラミック体、
を包含し、両セラミック体は互いに恒久的に接合されていることを特徴とする静電気チャックを対象とする。
図2には、本発明の一実施態様に従った静電チャック250が認められる。ガス到達のための中心開口210を備えた静電チャック250の上方セラミック体205の上に載っている基板200が認められる。上方セラミック体205は、接合剤260によって、RF電極220および加熱用構成要素225を備えた下方セラミック体215に接合されている。下方セラミック体215それ自体は、冷却用循環路235を包含する支持台230(またはペデスタル)に恒久的に連結されている。下方セラミック体215は、上方セラミック体205のガス到達用中心開口210の延長線上に、ガス到達のための中心開口240を有している。ペデスタル230は、上方および下方セラミック体のガス到達用中心開口210および240の延長線上に、ガス到達のための中心開口245を有している。
Claims (10)
- 処理されるべき基板(200、300)を担持するのに適した上方セラミック体(205)、
加熱用構成要素(225、325)および高周波電極(220、320)を担持する下方セラミック体(215、315)、
を包含し、両セラミック体は互いに恒久的に接合されていることを特徴とする静電チャック(250、350)。 - 前記両セラミック体(205、215、315)が加熱されたガラス(260,360)によって互いに接合されていることを特徴とする請求項1に記載のチャック。
- 冷却用構成要素(235)を担持するペデスタル(230)を包含し、前記下方セラミック体(215)が該ペデスタルに恒久的に連結されていることを特徴とする請求項1または2のいずれかに記載のチャック。
- 前記下方セラミック体(215、315)がろう接合(270、370)によって前記ペデスタル(230、330)に連結されていることを特徴とする請求項3に記載のチャック。
- 前記ろう接合(270、370)に用いられるろう/はんだがインジウムからなることを特徴とする請求項4に記載のチャック。
- 前記下方セラミック(215、315)が接合によってペデスタル(230,330)に連結されていることを特徴とする請求項3に記載のチャック。
- 下方セラミック体(215、315)のペデスタル(230、330)への接合(270、370)が銀によるものであることを特徴とする請求項6に記載のチャック。
- 前記下方セラミック体(315)が冷却用構成要素(335)を包含していることを特徴とする請求項1〜7のいずれかに記載のチャック。
- 前記下方セラミック体(215、315)が、該下方セラミック体に恒久的に連結された側面支持体によって担持されていることを特徴とする請求項1〜8のいずれかに記載のチャック。
- 前記上方および下方セラミック体(205、215、315)の各々を、ガス到達のための開口(210、240、245、310、340)が貫通していることを特徴とする請求項1〜9のいずれかに記載のチャック。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0301323A FR2850790B1 (fr) | 2003-02-05 | 2003-02-05 | Semelle de collage electrostatique avec electrode radiofrequence et moyens thermostatiques integres |
PCT/EP2004/050083 WO2004070829A1 (fr) | 2003-02-05 | 2004-02-05 | Semelle de collage electrostatique avec electrode radiofrequence et moyens thermostatiques integres |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006517341A true JP2006517341A (ja) | 2006-07-20 |
JP2006517341A5 JP2006517341A5 (ja) | 2007-03-01 |
Family
ID=32696374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006502004A Pending JP2006517341A (ja) | 2003-02-05 | 2004-02-05 | 高周波電極および温度調節手段が組込まれた静電チャック |
Country Status (8)
Country | Link |
---|---|
US (1) | US20060164785A1 (ja) |
EP (1) | EP1595284B1 (ja) |
JP (1) | JP2006517341A (ja) |
AT (1) | ATE369625T1 (ja) |
CA (1) | CA2514616A1 (ja) |
DE (1) | DE602004008037T2 (ja) |
FR (1) | FR2850790B1 (ja) |
WO (1) | WO2004070829A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5557164B2 (ja) * | 2010-03-24 | 2014-07-23 | Toto株式会社 | 静電チャック |
US8946058B2 (en) | 2011-03-14 | 2015-02-03 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
US9105705B2 (en) | 2011-03-14 | 2015-08-11 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
US8802545B2 (en) | 2011-03-14 | 2014-08-12 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
US9034199B2 (en) | 2012-02-21 | 2015-05-19 | Applied Materials, Inc. | Ceramic article with reduced surface defect density and process for producing a ceramic article |
US9212099B2 (en) | 2012-02-22 | 2015-12-15 | Applied Materials, Inc. | Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics |
US9090046B2 (en) | 2012-04-16 | 2015-07-28 | Applied Materials, Inc. | Ceramic coated article and process for applying ceramic coating |
US9604249B2 (en) | 2012-07-26 | 2017-03-28 | Applied Materials, Inc. | Innovative top-coat approach for advanced device on-wafer particle performance |
US9343289B2 (en) | 2012-07-27 | 2016-05-17 | Applied Materials, Inc. | Chemistry compatible coating material for advanced device on-wafer particle performance |
US9916998B2 (en) | 2012-12-04 | 2018-03-13 | Applied Materials, Inc. | Substrate support assembly having a plasma resistant protective layer |
US9685356B2 (en) * | 2012-12-11 | 2017-06-20 | Applied Materials, Inc. | Substrate support assembly having metal bonded protective layer |
US8941969B2 (en) | 2012-12-21 | 2015-01-27 | Applied Materials, Inc. | Single-body electrostatic chuck |
US9358702B2 (en) | 2013-01-18 | 2016-06-07 | Applied Materials, Inc. | Temperature management of aluminium nitride electrostatic chuck |
US9669653B2 (en) | 2013-03-14 | 2017-06-06 | Applied Materials, Inc. | Electrostatic chuck refurbishment |
US9887121B2 (en) | 2013-04-26 | 2018-02-06 | Applied Materials, Inc. | Protective cover for electrostatic chuck |
US9666466B2 (en) | 2013-05-07 | 2017-05-30 | Applied Materials, Inc. | Electrostatic chuck having thermally isolated zones with minimal crosstalk |
US9865434B2 (en) | 2013-06-05 | 2018-01-09 | Applied Materials, Inc. | Rare-earth oxide based erosion resistant coatings for semiconductor application |
US9850568B2 (en) | 2013-06-20 | 2017-12-26 | Applied Materials, Inc. | Plasma erosion resistant rare-earth oxide based thin film coatings |
EP3158581A1 (en) | 2014-06-17 | 2017-04-26 | Evatec AG | Electro-static chuck with radiofrequency shunt |
US10020218B2 (en) | 2015-11-17 | 2018-07-10 | Applied Materials, Inc. | Substrate support assembly with deposited surface features |
US11047035B2 (en) | 2018-02-23 | 2021-06-29 | Applied Materials, Inc. | Protective yttria coating for semiconductor equipment parts |
Citations (10)
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JPH05226289A (ja) * | 1990-07-20 | 1993-09-03 | Tokyo Electron Ltd | 被処理体用載置装置及びそれを用いた処理装置 |
JPH06216224A (ja) * | 1993-01-13 | 1994-08-05 | Sony Corp | 静電チャック及びその作製方法並びに基板処理装置及び基板搬送装置 |
JPH08330402A (ja) * | 1995-03-30 | 1996-12-13 | Ngk Insulators Ltd | 半導体ウエハー保持装置 |
JPH09172056A (ja) * | 1995-12-20 | 1997-06-30 | Souzou Kagaku:Kk | 半導体基板のプラズマ処理装置 |
WO2000060658A1 (fr) * | 1999-04-06 | 2000-10-12 | Tokyo Electron Limited | Electrode, etage de tranche, dispositif a plasma, et procede de fabrication d'une electrode et d'un etage de tranche |
JP2001325880A (ja) * | 2000-03-06 | 2001-11-22 | Canon Inc | 電子源及び画像表示装置の製造装置及び方法、並びに基板処理装置及び方法 |
JP2002016005A (ja) * | 2000-06-29 | 2002-01-18 | Sumitomo Electric Ind Ltd | 半導体製造装置用電極端子接合セラミックス部材及びその製造方法 |
JP2002025913A (ja) * | 2000-07-04 | 2002-01-25 | Sumitomo Electric Ind Ltd | 半導体製造装置用サセプタとそれを用いた半導体製造装置 |
JP2002141257A (ja) * | 2000-05-24 | 2002-05-17 | Ibiden Co Ltd | 半導体製造・検査装置用セラミックヒータ |
JP2004104113A (ja) * | 2002-08-22 | 2004-04-02 | Sumitomo Osaka Cement Co Ltd | サセプタ装置 |
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EP0493089B1 (en) * | 1990-12-25 | 1998-09-16 | Ngk Insulators, Ltd. | Wafer heating apparatus and method for producing the same |
JPH09213777A (ja) * | 1996-01-31 | 1997-08-15 | Kyocera Corp | 静電チャック |
US5754391A (en) * | 1996-05-17 | 1998-05-19 | Saphikon Inc. | Electrostatic chuck |
JPH11354504A (ja) * | 1998-06-08 | 1999-12-24 | Sony Corp | ガラス基板処理装置 |
US6073577A (en) * | 1998-06-30 | 2000-06-13 | Lam Research Corporation | Electrode for plasma processes and method for manufacture and use thereof |
US20020036881A1 (en) * | 1999-05-07 | 2002-03-28 | Shamouil Shamouilian | Electrostatic chuck having composite base and method |
US6490146B2 (en) * | 1999-05-07 | 2002-12-03 | Applied Materials Inc. | Electrostatic chuck bonded to base with a bond layer and method |
US6632512B1 (en) * | 1999-11-10 | 2003-10-14 | Ibiden Co., Ltd. | Ceramic substrate |
JP2002057207A (ja) * | 2000-01-20 | 2002-02-22 | Sumitomo Electric Ind Ltd | 半導体製造装置用ウェハ保持体およびその製造方法ならびに半導体製造装置 |
JP2001253777A (ja) * | 2000-03-13 | 2001-09-18 | Ibiden Co Ltd | セラミック基板 |
US6444957B1 (en) * | 2000-04-26 | 2002-09-03 | Sumitomo Osaka Cement Co., Ltd | Heating apparatus |
TWI254403B (en) * | 2000-05-19 | 2006-05-01 | Ngk Insulators Ltd | Electrostatic clamper, and electrostatic attracting structures |
US6646233B2 (en) * | 2002-03-05 | 2003-11-11 | Hitachi High-Technologies Corporation | Wafer stage for wafer processing apparatus and wafer processing method |
US6921724B2 (en) * | 2002-04-02 | 2005-07-26 | Lam Research Corporation | Variable temperature processes for tunable electrostatic chuck |
-
2003
- 2003-02-05 FR FR0301323A patent/FR2850790B1/fr not_active Expired - Fee Related
-
2004
- 2004-02-05 US US10/544,516 patent/US20060164785A1/en not_active Abandoned
- 2004-02-05 WO PCT/EP2004/050083 patent/WO2004070829A1/fr active IP Right Grant
- 2004-02-05 JP JP2006502004A patent/JP2006517341A/ja active Pending
- 2004-02-05 DE DE602004008037T patent/DE602004008037T2/de not_active Expired - Lifetime
- 2004-02-05 EP EP04708363A patent/EP1595284B1/fr not_active Expired - Lifetime
- 2004-02-05 CA CA002514616A patent/CA2514616A1/fr not_active Abandoned
- 2004-02-05 AT AT04708363T patent/ATE369625T1/de active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05226289A (ja) * | 1990-07-20 | 1993-09-03 | Tokyo Electron Ltd | 被処理体用載置装置及びそれを用いた処理装置 |
JPH06216224A (ja) * | 1993-01-13 | 1994-08-05 | Sony Corp | 静電チャック及びその作製方法並びに基板処理装置及び基板搬送装置 |
JPH08330402A (ja) * | 1995-03-30 | 1996-12-13 | Ngk Insulators Ltd | 半導体ウエハー保持装置 |
JPH09172056A (ja) * | 1995-12-20 | 1997-06-30 | Souzou Kagaku:Kk | 半導体基板のプラズマ処理装置 |
WO2000060658A1 (fr) * | 1999-04-06 | 2000-10-12 | Tokyo Electron Limited | Electrode, etage de tranche, dispositif a plasma, et procede de fabrication d'une electrode et d'un etage de tranche |
JP2001325880A (ja) * | 2000-03-06 | 2001-11-22 | Canon Inc | 電子源及び画像表示装置の製造装置及び方法、並びに基板処理装置及び方法 |
JP2002141257A (ja) * | 2000-05-24 | 2002-05-17 | Ibiden Co Ltd | 半導体製造・検査装置用セラミックヒータ |
JP2002016005A (ja) * | 2000-06-29 | 2002-01-18 | Sumitomo Electric Ind Ltd | 半導体製造装置用電極端子接合セラミックス部材及びその製造方法 |
JP2002025913A (ja) * | 2000-07-04 | 2002-01-25 | Sumitomo Electric Ind Ltd | 半導体製造装置用サセプタとそれを用いた半導体製造装置 |
JP2004104113A (ja) * | 2002-08-22 | 2004-04-02 | Sumitomo Osaka Cement Co Ltd | サセプタ装置 |
Also Published As
Publication number | Publication date |
---|---|
DE602004008037D1 (de) | 2007-09-20 |
ATE369625T1 (de) | 2007-08-15 |
FR2850790B1 (fr) | 2005-04-08 |
CA2514616A1 (fr) | 2004-08-19 |
DE602004008037T2 (de) | 2008-04-30 |
WO2004070829A1 (fr) | 2004-08-19 |
EP1595284B1 (fr) | 2007-08-08 |
FR2850790A1 (fr) | 2004-08-06 |
US20060164785A1 (en) | 2006-07-27 |
EP1595284A1 (fr) | 2005-11-16 |
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