DE602004005527D1 - Oberflächenemittierender Halbleiterlaser und dessen Herstellungsverfahren - Google Patents

Oberflächenemittierender Halbleiterlaser und dessen Herstellungsverfahren

Info

Publication number
DE602004005527D1
DE602004005527D1 DE602004005527T DE602004005527T DE602004005527D1 DE 602004005527 D1 DE602004005527 D1 DE 602004005527D1 DE 602004005527 T DE602004005527 T DE 602004005527T DE 602004005527 T DE602004005527 T DE 602004005527T DE 602004005527 D1 DE602004005527 D1 DE 602004005527D1
Authority
DE
Germany
Prior art keywords
production method
semiconductor laser
emitting semiconductor
emitting
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004005527T
Other languages
English (en)
Other versions
DE602004005527T2 (de
Inventor
Yuichi Kuromizu
Hironobu Narui
Yoshinori Yamauchi
Yoshiyuki Tanaka
Yoshiaki Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE602004005527D1 publication Critical patent/DE602004005527D1/de
Application granted granted Critical
Publication of DE602004005527T2 publication Critical patent/DE602004005527T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE602004005527T 2003-05-12 2004-05-10 Oberflächenemittierender Halbleiterlaser und dessen Herstellungsverfahren Expired - Lifetime DE602004005527T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003133306A JP4124017B2 (ja) 2003-05-12 2003-05-12 面発光型半導体レーザ素子の製造方法
JP2003133306 2003-05-12

Publications (2)

Publication Number Publication Date
DE602004005527D1 true DE602004005527D1 (de) 2007-05-10
DE602004005527T2 DE602004005527T2 (de) 2007-12-27

Family

ID=33028323

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004005527T Expired - Lifetime DE602004005527T2 (de) 2003-05-12 2004-05-10 Oberflächenemittierender Halbleiterlaser und dessen Herstellungsverfahren

Country Status (7)

Country Link
US (1) US7006544B2 (de)
EP (1) EP1478065B1 (de)
JP (1) JP4124017B2 (de)
KR (1) KR101013422B1 (de)
CN (1) CN100340038C (de)
DE (1) DE602004005527T2 (de)
TW (1) TWI247465B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3838218B2 (ja) 2003-05-19 2006-10-25 ソニー株式会社 面発光型半導体レーザ素子及びその製造方法
KR100726324B1 (ko) 2005-12-05 2007-06-11 주식회사 레이칸 산화막 구경을 갖는 장파장 표면방출 레이저 소자 및 그제조방법
JP4974981B2 (ja) * 2007-09-21 2012-07-11 キヤノン株式会社 垂直共振器型面発光レーザ素子、及び該垂直共振器型面発光レーザ素子を用いた画像形成装置
JP2012019040A (ja) * 2010-07-07 2012-01-26 Furukawa Electric Co Ltd:The 面発光レーザ
JP6782082B2 (ja) * 2016-03-11 2020-11-11 古河電気工業株式会社 半導体光素子、およびその製造方法
JP2020092145A (ja) 2018-12-04 2020-06-11 株式会社東芝 量子カスケードレーザおよびその製造方法
US20240022040A1 (en) 2020-10-27 2024-01-18 Sony Group Corporation Surface emitting laser and surface emitting laser array

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2716693B2 (ja) * 1985-02-08 1998-02-18 ソニー株式会社 半導体レーザー
JPH01109786A (ja) * 1987-10-22 1989-04-26 Sharp Corp 半導体レーザ素子
JPH0529713A (ja) 1991-07-22 1993-02-05 Sharp Corp 半導体レーザ素子
JPH0555711A (ja) * 1991-08-22 1993-03-05 Furukawa Electric Co Ltd:The 半導体レーザ素子とその製造方法
KR100259009B1 (ko) 1993-09-23 2000-06-15 윤종용 레이저 다이오드
JP3360105B2 (ja) * 1994-03-04 2002-12-24 富士通株式会社 半導体装置の製造方法
KR960009300A (ko) * 1994-08-31 1996-03-22 김광호 반도체 레이저 다이오드 및 그 제조방법
US5493577A (en) * 1994-12-21 1996-02-20 Sandia Corporation Efficient semiconductor light-emitting device and method
US5881085A (en) * 1996-07-25 1999-03-09 Picolight, Incorporated Lens comprising at least one oxidized layer and method for forming same
US5848086A (en) * 1996-12-09 1998-12-08 Motorola, Inc. Electrically confined VCSEL
JP2953450B2 (ja) 1997-12-19 1999-09-27 日本電気株式会社 半導体レーザの製造方法および半導体レーザ
US6075804A (en) * 1998-01-28 2000-06-13 Picolight Incorporated Semiconductor device having an oxide defined aperture
JP3713956B2 (ja) * 1998-05-29 2005-11-09 富士ゼロックス株式会社 面発光型半導体レーザ素子の製造方法
JP3770305B2 (ja) * 2000-03-29 2006-04-26 セイコーエプソン株式会社 面発光型半導体レーザおよびその製造方法
SG102589A1 (en) * 2000-08-16 2004-03-26 Inst Materials Research & Eng Buried hetero-structure opto-electronic device
US6674785B2 (en) * 2000-09-21 2004-01-06 Ricoh Company, Ltd. Vertical-cavity, surface-emission type laser diode and fabrication process thereof
US6803604B2 (en) * 2001-03-13 2004-10-12 Ricoh Company, Ltd. Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device
JP2002353563A (ja) * 2001-05-24 2002-12-06 Rohm Co Ltd 半導体発光素子およびその製法
US6839369B2 (en) * 2001-06-26 2005-01-04 The Furukawa Electric Co., Ltd. Surface emitting semiconductor laser device

Also Published As

Publication number Publication date
TW200425605A (en) 2004-11-16
KR20040097898A (ko) 2004-11-18
JP4124017B2 (ja) 2008-07-23
DE602004005527T2 (de) 2007-12-27
TWI247465B (en) 2006-01-11
KR101013422B1 (ko) 2011-02-14
JP2004335964A (ja) 2004-11-25
CN100340038C (zh) 2007-09-26
US20040228380A1 (en) 2004-11-18
US7006544B2 (en) 2006-02-28
CN1574525A (zh) 2005-02-02
EP1478065B1 (de) 2007-03-28
EP1478065A1 (de) 2004-11-17

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