DE60332140D1 - Halbleiterlaserbauelement und dessen herstellungsverfahren - Google Patents

Halbleiterlaserbauelement und dessen herstellungsverfahren

Info

Publication number
DE60332140D1
DE60332140D1 DE60332140T DE60332140T DE60332140D1 DE 60332140 D1 DE60332140 D1 DE 60332140D1 DE 60332140 T DE60332140 T DE 60332140T DE 60332140 T DE60332140 T DE 60332140T DE 60332140 D1 DE60332140 D1 DE 60332140D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor laser
laser element
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60332140T
Other languages
English (en)
Inventor
Yoshifumi Sato
Daisuke Imanishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE60332140D1 publication Critical patent/DE60332140D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/3013—AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H01S5/2216—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3425—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising couples wells or superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/3436—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)P

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Geometry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
DE60332140T 2002-09-20 2003-09-19 Halbleiterlaserbauelement und dessen herstellungsverfahren Expired - Lifetime DE60332140D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002274492 2002-09-20
PCT/JP2003/011985 WO2004032296A1 (ja) 2002-09-20 2003-09-19 半導体レーザ装置及びその製造方法

Publications (1)

Publication Number Publication Date
DE60332140D1 true DE60332140D1 (de) 2010-05-27

Family

ID=32063495

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60332140T Expired - Lifetime DE60332140D1 (de) 2002-09-20 2003-09-19 Halbleiterlaserbauelement und dessen herstellungsverfahren

Country Status (5)

Country Link
US (3) US20050041712A1 (de)
EP (1) EP1555731B1 (de)
CN (1) CN1610995B (de)
DE (1) DE60332140D1 (de)
WO (1) WO2004032296A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101233443B (zh) * 2005-07-28 2010-06-23 松下电器产业株式会社 激光图像显示器
US20110103418A1 (en) * 2009-11-03 2011-05-05 The Regents Of The University Of California Superluminescent diodes by crystallographic etching
CN105071221A (zh) * 2015-08-26 2015-11-18 武汉电信器件有限公司 一种高速激光器芯片
DE102015116712A1 (de) * 2015-10-01 2017-04-06 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
CN105406359B (zh) * 2015-12-29 2019-06-18 山东华光光电子股份有限公司 一种含有高选择性腐蚀阻挡层的AlGaInP半导体激光器
CN106300012B (zh) * 2016-09-19 2020-02-14 山东华光光电子股份有限公司 一种含有高选择性腐蚀阻挡层的808nm半导体激光器
CN108512031B (zh) * 2017-02-28 2020-02-14 山东华光光电子股份有限公司 一种微通道半导体激光器芯片结构及其制作方法
CN111092366B (zh) * 2018-10-23 2021-04-06 山东华光光电子股份有限公司 一种具有双面电流限制结构的半导体激光器及制备方法
CN110880675A (zh) * 2019-11-25 2020-03-13 江苏华兴激光科技有限公司 侧面光栅氧化限制结构单纵模边发射激光器及其制备方法
JP2021097172A (ja) * 2019-12-18 2021-06-24 シャープ福山レーザー株式会社 半導体レーザ素子

Family Cites Families (19)

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US4797179A (en) * 1987-06-09 1989-01-10 Lytel Corporation Fabrication of integral lenses on LED devices
JPH04111375A (ja) * 1990-08-30 1992-04-13 Furukawa Electric Co Ltd:The 半導体レーザ素子
JP2728974B2 (ja) * 1990-11-13 1998-03-18 キヤノン株式会社 光集積装置
JPH0677205A (ja) * 1992-08-26 1994-03-18 Matsushita Electric Ind Co Ltd 化合物半導体の微細構造形成方法
US5523256A (en) * 1993-07-21 1996-06-04 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor laser
JPH0878775A (ja) * 1994-09-06 1996-03-22 Fuji Xerox Co Ltd 半導体レーザ装置およびその製造方法
US5832019A (en) * 1994-11-28 1998-11-03 Xerox Corporation Index guided semiconductor laser biode with shallow selective IILD
JPH09139550A (ja) * 1995-11-16 1997-05-27 Mitsubishi Electric Corp 半導体レーザ装置の製造方法、及び半導体レーザ装置
US5963572A (en) * 1995-12-28 1999-10-05 Sanyo Electric Co., Ltd. Semiconductor laser device and manufacturing method thereof
US6177710B1 (en) * 1996-06-13 2001-01-23 The Furukawa Electric Co., Ltd. Semiconductor waveguide type photodetector and method for manufacturing the same
JP2000501571A (ja) * 1996-09-26 2000-02-08 ユニフェイズ オプト ホールディングス インコーポレイテッド メサ部を有するオプトエレクトロニク半導体装置の製造方法
JPH10223929A (ja) * 1996-12-05 1998-08-21 Showa Denko Kk ＡｌＧａＩｎＰ発光素子用基板
JP3732626B2 (ja) * 1997-08-26 2006-01-05 株式会社東芝 半導体発光素子
TW418547B (en) * 1998-12-23 2001-01-11 Ind Tech Res Inst Manufacturing method of ridge waveguide semiconductor light emitting device
JP2001168458A (ja) * 1999-12-08 2001-06-22 Fuji Photo Film Co Ltd 半導体レーザ装置
JP2001185818A (ja) * 1999-12-27 2001-07-06 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
JP2001257414A (ja) * 2000-03-10 2001-09-21 Sony Corp 半導体レーザ
JP4091261B2 (ja) * 2000-10-31 2008-05-28 株式会社東芝 半導体発光素子及びその製造方法
JP3765987B2 (ja) * 2001-02-15 2006-04-12 ユーディナデバイス株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
CN1610995B (zh) 2012-12-05
EP1555731A1 (de) 2005-07-20
US20130301667A1 (en) 2013-11-14
CN1610995A (zh) 2005-04-27
US20050041712A1 (en) 2005-02-24
US20090023240A1 (en) 2009-01-22
EP1555731B1 (de) 2010-04-14
WO2004032296A1 (ja) 2004-04-15
EP1555731A4 (de) 2005-10-26

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