DE60143728D1 - Belichtungsverfahren und Belichtungsvorrichtung zur Verwendung von Nahfeldlicht und Photomaske - Google Patents
Belichtungsverfahren und Belichtungsvorrichtung zur Verwendung von Nahfeldlicht und PhotomaskeInfo
- Publication number
- DE60143728D1 DE60143728D1 DE60143728T DE60143728T DE60143728D1 DE 60143728 D1 DE60143728 D1 DE 60143728D1 DE 60143728 T DE60143728 T DE 60143728T DE 60143728 T DE60143728 T DE 60143728T DE 60143728 D1 DE60143728 D1 DE 60143728D1
- Authority
- DE
- Germany
- Prior art keywords
- photomask
- near field
- field light
- exposure
- exposure apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7035—Proximity or contact printers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/703—Gap setting, e.g. in proximity printer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000058278 | 2000-03-03 | ||
JP2001050898A JP4532761B2 (ja) | 2000-03-03 | 2001-02-26 | 近接場光による露光方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60143728D1 true DE60143728D1 (de) | 2011-02-10 |
Family
ID=26586691
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60143728T Expired - Lifetime DE60143728D1 (de) | 2000-03-03 | 2001-03-02 | Belichtungsverfahren und Belichtungsvorrichtung zur Verwendung von Nahfeldlicht und Photomaske |
Country Status (4)
Country | Link |
---|---|
US (1) | US6720115B2 (de) |
EP (1) | EP1150162B1 (de) |
JP (1) | JP4532761B2 (de) |
DE (1) | DE60143728D1 (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001308002A (ja) | 2000-02-15 | 2001-11-02 | Canon Inc | フォトマスクを用いたパターン作製方法、及びパターン作製装置 |
JP2002246307A (ja) * | 2000-12-12 | 2002-08-30 | Canon Inc | 露光装置及び露光方法 |
JP3715973B2 (ja) | 2002-05-07 | 2005-11-16 | キヤノン株式会社 | 近接場光露光用のフォトマスク、該フォトマスクを用いたパターン作製方法およびパターン作製装置 |
JP2004297032A (ja) * | 2003-02-03 | 2004-10-21 | Toshiba Corp | 露光方法及びこれを用いた半導体装置製造方法 |
JP4266661B2 (ja) * | 2003-02-20 | 2009-05-20 | キヤノン株式会社 | 近接場露光用フォトマスク |
JP4183245B2 (ja) * | 2003-05-12 | 2008-11-19 | キヤノン株式会社 | アライメント方法、該アライメント方法を用いた露光方法 |
JP4018591B2 (ja) * | 2003-05-12 | 2007-12-05 | キヤノン株式会社 | 近接場光露光用フォトマスク、該フォトマスクを用いた近接場光強度分布の制御方法、パターン作製方法 |
JP4194516B2 (ja) * | 2003-06-24 | 2008-12-10 | キヤノン株式会社 | 露光方法、露光用マスク及びデバイスの製造方法 |
JP4194514B2 (ja) * | 2003-06-26 | 2008-12-10 | キヤノン株式会社 | 露光用マスクの設計方法及び製造方法 |
JP4027286B2 (ja) * | 2003-08-08 | 2007-12-26 | キヤノン株式会社 | 近接場露光方法及び装置 |
JP4185830B2 (ja) | 2003-08-08 | 2008-11-26 | キヤノン株式会社 | 近接場露光方法、近接場露光装置、および近接場露光マスク |
JP2005085922A (ja) * | 2003-09-08 | 2005-03-31 | Canon Inc | マスク作製方法及び微小開口を有するマスク |
JP2005093528A (ja) * | 2003-09-12 | 2005-04-07 | Canon Inc | 近接場露光用マスクの支持固定構造、該支持固定構造を有する近接場露光装置 |
US7279253B2 (en) * | 2003-09-12 | 2007-10-09 | Canon Kabushiki Kaisha | Near-field light generating structure, near-field exposure mask, and near-field generating method |
US7276316B2 (en) * | 2004-02-02 | 2007-10-02 | International Business Machines Corporation | Common second level frame exposure methods for making embedded attenuated phase shift masks |
JP4099589B2 (ja) * | 2004-02-20 | 2008-06-11 | ソニー株式会社 | マスクパターン補正方法、露光用マスクおよびマスク製造方法 |
JP2006013216A (ja) * | 2004-06-28 | 2006-01-12 | Canon Inc | 近接場露光によるレジストパターンの形成方法、及び該レジストパターンの形成方法を用いた基板の加工方法、デバイスの作製方法 |
JP2006013402A (ja) * | 2004-06-29 | 2006-01-12 | Canon Inc | 露光装置 |
JP4522166B2 (ja) | 2004-06-29 | 2010-08-11 | キヤノン株式会社 | 露光方法 |
JP4250570B2 (ja) * | 2004-06-30 | 2009-04-08 | キヤノン株式会社 | 近接場露光方法及びこれを用いた素子の製造方法 |
JP4574250B2 (ja) * | 2004-06-30 | 2010-11-04 | キヤノン株式会社 | フォトマスク |
JP2006019447A (ja) * | 2004-06-30 | 2006-01-19 | Canon Inc | レジストパターンの形成方法、基板の加工方法及びデバイスの作製方法 |
JP2006049538A (ja) * | 2004-08-04 | 2006-02-16 | Canon Inc | 近接場露光用マスクの密着制御装置及び方法、近接場露光用マスク |
JP2007329214A (ja) * | 2006-06-07 | 2007-12-20 | Canon Inc | 近接場露光方法 |
JP2008098263A (ja) * | 2006-10-10 | 2008-04-24 | Canon Inc | 近接場露光用マスク及び該マスクを用いたレジストパターンの形成方法 |
US20080085479A1 (en) * | 2006-10-10 | 2008-04-10 | Canon Kabushiki Kaisha | Pattern forming method and device production process using the method |
KR100876836B1 (ko) * | 2007-06-29 | 2009-01-07 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
US8890874B2 (en) | 2007-12-14 | 2014-11-18 | Microsoft Corporation | Changing visual content communication |
US20110300473A1 (en) * | 2010-06-04 | 2011-12-08 | Lightware Power, Inc. | Method for nanopatterning using nanomasks and light exposure |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0774080A (ja) * | 1993-09-03 | 1995-03-17 | Hitachi Ltd | パターン形成方法 |
JPH08179493A (ja) | 1994-12-22 | 1996-07-12 | Hitachi Ltd | 光露光または転写方法および装置またはそのためのマスク |
JPH08321070A (ja) * | 1995-05-25 | 1996-12-03 | Sanyo Electric Co Ltd | 光記録媒体の再生方法及び再生装置 |
JPH097935A (ja) * | 1995-06-23 | 1997-01-10 | Nikon Corp | レジストの露光方法 |
US5973316A (en) | 1997-07-08 | 1999-10-26 | Nec Research Institute, Inc. | Sub-wavelength aperture arrays with enhanced light transmission |
JPH1126360A (ja) * | 1997-07-09 | 1999-01-29 | Sony Corp | マスクパターンの作成方法およびマスクパターン作成装置並びにマスク作成装置 |
JP3950538B2 (ja) * | 1997-12-24 | 2007-08-01 | キヤノン株式会社 | エバネッセント光露光装置及びエバネッセント光露光方法 |
US6171730B1 (en) | 1997-11-07 | 2001-01-09 | Canon Kabushiki Kaisha | Exposure method and exposure apparatus |
TW380282B (en) * | 1997-12-31 | 2000-01-21 | United Microelectronics Corp | Proximity effect correction method for mask |
JP4346701B2 (ja) | 1998-03-25 | 2009-10-21 | キヤノン株式会社 | エバネッセント光を用いた露光方法 |
JP3809500B2 (ja) * | 1998-10-05 | 2006-08-16 | 正喜 江刺 | 近接場光露光マスク及びその製造方法並びに近接場光露光装置及び近接場光露光方法 |
-
2001
- 2001-02-26 JP JP2001050898A patent/JP4532761B2/ja not_active Expired - Fee Related
- 2001-03-01 US US09/795,497 patent/US6720115B2/en not_active Expired - Fee Related
- 2001-03-02 EP EP01105130A patent/EP1150162B1/de not_active Expired - Lifetime
- 2001-03-02 DE DE60143728T patent/DE60143728D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20010036581A1 (en) | 2001-11-01 |
US6720115B2 (en) | 2004-04-13 |
EP1150162A3 (de) | 2003-12-03 |
EP1150162B1 (de) | 2010-12-29 |
JP2001319875A (ja) | 2001-11-16 |
EP1150162A2 (de) | 2001-10-31 |
JP4532761B2 (ja) | 2010-08-25 |
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