DE60140076D1 - Verfahren zum wachsen aus der dampfphase und herstellungsverfahren für eine halbleiteranordnung - Google Patents

Verfahren zum wachsen aus der dampfphase und herstellungsverfahren für eine halbleiteranordnung

Info

Publication number
DE60140076D1
DE60140076D1 DE60140076T DE60140076T DE60140076D1 DE 60140076 D1 DE60140076 D1 DE 60140076D1 DE 60140076 T DE60140076 T DE 60140076T DE 60140076 T DE60140076 T DE 60140076T DE 60140076 D1 DE60140076 D1 DE 60140076D1
Authority
DE
Germany
Prior art keywords
growing
manufacturing semiconductor
semiconductor arrangement
steam phase
steam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60140076T
Other languages
English (en)
Inventor
Hideo Yamagata
Takeyoshi Koumoto
Kenji Atsuumi
Yoichi Negoro
Tatsushiro Hirata
Takashi Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE60140076D1 publication Critical patent/DE60140076D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/0251—Graded layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Chemical Vapour Deposition (AREA)
DE60140076T 2000-12-20 2001-12-20 Verfahren zum wachsen aus der dampfphase und herstellungsverfahren für eine halbleiteranordnung Expired - Lifetime DE60140076D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000387419 2000-12-20
JP2000390738 2000-12-22
JP2001007666 2001-01-16
PCT/JP2001/011203 WO2002050880A1 (fr) 2000-12-20 2001-12-20 Procede de cristallisation en phase vapeur, procede de production de semiconducteur, et procede de production pour dispositif a semiconducteur

Publications (1)

Publication Number Publication Date
DE60140076D1 true DE60140076D1 (de) 2009-11-12

Family

ID=27345484

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60140076T Expired - Lifetime DE60140076D1 (de) 2000-12-20 2001-12-20 Verfahren zum wachsen aus der dampfphase und herstellungsverfahren für eine halbleiteranordnung

Country Status (6)

Country Link
US (3) US7157344B2 (de)
EP (1) EP1345260B1 (de)
JP (1) JP4052119B2 (de)
KR (1) KR100849835B1 (de)
DE (1) DE60140076D1 (de)
WO (1) WO2002050880A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7517768B2 (en) * 2003-03-31 2009-04-14 Intel Corporation Method for fabricating a heterojunction bipolar transistor
US7075126B2 (en) 2004-02-27 2006-07-11 International Business Machines Corporation Transistor structure with minimized parasitics and method of fabricating the same
US7118995B2 (en) * 2004-05-19 2006-10-10 International Business Machines Corporation Yield improvement in silicon-germanium epitaxial growth
US8188512B2 (en) * 2008-12-03 2012-05-29 Electronics And Telecommunications Research Institute Growth of germanium epitaxial thin film with negative photoconductance characteristics and photodiode using the same
JP5854112B2 (ja) * 2011-09-30 2016-02-09 東京エレクトロン株式会社 薄膜の形成方法及び成膜装置
US9976227B2 (en) 2014-05-15 2018-05-22 Baker Hughes, A Ge Company, Llc Electrochemical machining method for rotors or stators for moineau pumps
CN110603650B (zh) * 2017-04-24 2022-07-08 苏州晶湛半导体有限公司 一种半导体结构和制备半导体结构的方法
JP7347350B2 (ja) * 2020-07-10 2023-09-20 信越半導体株式会社 エピタキシャル成長条件の設定方法及びエピタキシャルウェーハの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04106980A (ja) * 1990-08-24 1992-04-08 Fujitsu Ltd 半導体装置及びその製造方法
JPH04162431A (ja) 1990-10-24 1992-06-05 Fujitsu Ltd 半導体装置の製造方法
JP3130545B2 (ja) * 1991-03-06 2001-01-31 株式会社東芝 半導体装置および半導体装置の製造方法
WO1996015550A1 (en) * 1994-11-10 1996-05-23 Lawrence Semiconductor Research Laboratory, Inc. Silicon-germanium-carbon compositions and processes thereof
JPH09181091A (ja) 1995-12-12 1997-07-11 Lucent Technol Inc ヘテロ接合バイポーラトランジスタの製造方法
KR100205017B1 (ko) * 1995-12-20 1999-07-01 이계철 이종접합 바이폴러 트랜지스터의 제조방법
JP2877108B2 (ja) * 1996-12-04 1999-03-31 日本電気株式会社 半導体装置およびその製造方法
KR100352368B1 (ko) * 1998-09-04 2002-09-11 캐논 가부시끼가이샤 반도체기판 및 이것의 제조방법
JP3603747B2 (ja) * 2000-05-11 2004-12-22 三菱住友シリコン株式会社 ＳｉＧｅ膜の形成方法とヘテロ接合トランジスタの製造方法、及びヘテロ接合バイポーラトランジスタ
JP2002026027A (ja) 2000-06-30 2002-01-25 Toshiba Corp 半導体装置及びその製造方法
JP2002359247A (ja) * 2000-07-10 2002-12-13 Canon Inc 半導体部材、半導体装置およびそれらの製造方法

Also Published As

Publication number Publication date
KR20020089356A (ko) 2002-11-29
JPWO2002050880A1 (ja) 2004-04-22
US20040191960A1 (en) 2004-09-30
KR100849835B1 (ko) 2008-08-01
EP1345260A1 (de) 2003-09-17
US7157344B2 (en) 2007-01-02
US20030134491A1 (en) 2003-07-17
EP1345260B1 (de) 2009-09-30
US7303979B2 (en) 2007-12-04
EP1345260A4 (de) 2008-05-28
JP4052119B2 (ja) 2008-02-27
US7507642B2 (en) 2009-03-24
WO2002050880A1 (fr) 2002-06-27
US20070287268A1 (en) 2007-12-13

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DE60140076D1 (de) Verfahren zum wachsen aus der dampfphase und herstellungsverfahren für eine halbleiteranordnung

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