DE60135014D1 - Verfahren und vorrichtung zum ecr plasma aufbringen von einwandigen kohlenstoffnanoröhren sowie erhaltene nanoröhren - Google Patents

Verfahren und vorrichtung zum ecr plasma aufbringen von einwandigen kohlenstoffnanoröhren sowie erhaltene nanoröhren

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Publication number
DE60135014D1
DE60135014D1 DE60135014T DE60135014T DE60135014D1 DE 60135014 D1 DE60135014 D1 DE 60135014D1 DE 60135014 T DE60135014 T DE 60135014T DE 60135014 T DE60135014 T DE 60135014T DE 60135014 D1 DE60135014 D1 DE 60135014D1
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DE
Germany
Prior art keywords
nanotubes
substrate
deposition chamber
received
carbon nanotubes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60135014T
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English (en)
Inventor
Marc Delaunay
Cyril Vannuffel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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Publication of DE60135014D1 publication Critical patent/DE60135014D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
    • C01B3/0005Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes
    • C01B3/001Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes characterised by the uptaking medium; Treatment thereof
    • C01B3/0021Carbon, e.g. active carbon, carbon nanotubes, fullerenes; Treatment thereof
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
    • C01B32/158Carbon nanotubes
    • C01B32/16Preparation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/10Heating of the reaction chamber or the substrate
    • C30B25/105Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605Products containing multiple oriented crystallites, e.g. columnar crystallites
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/66Crystals of complex geometrical shape, e.g. tubes, cylinders
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17CVESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C11/00Use of gas-solvents or gas-sorbents in vessels
    • F17C11/005Use of gas-solvents or gas-sorbents in vessels for hydrogen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192Microwave generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3266Magnetic control means
    • H01J37/32678Electron cyclotron resonance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2202/00Structure or properties of carbon nanotubes
    • C01B2202/02Single-walled nanotubes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/30Cold cathodes
    • H01J2201/304Field emission cathodes
    • H01J2201/30446Field emission cathodes characterised by the emitter material
    • H01J2201/30453Carbon types
    • H01J2201/30469Carbon nanotubes (CNTs)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2209/00Apparatus and processes for manufacture of discharge tubes
    • H01J2209/02Manufacture of cathodes
    • H01J2209/022Cold cathodes
    • H01J2209/0223Field emission cathodes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30Hydrogen technology
    • Y02E60/32Hydrogen storage

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Composite Materials (AREA)
  • Combustion & Propulsion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geometry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
DE60135014T 2000-10-27 2001-10-26 Verfahren und vorrichtung zum ecr plasma aufbringen von einwandigen kohlenstoffnanoröhren sowie erhaltene nanoröhren Expired - Lifetime DE60135014D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0013831A FR2815954B1 (fr) 2000-10-27 2000-10-27 Procede et dispositif de depot par plasma a la resonance cyclotron electronique de nanotubes de carbone monoparois et nanotubes ainsi obtenus
PCT/FR2001/003334 WO2002034669A1 (fr) 2000-10-27 2001-10-26 Procede et dispositif de depot par plasma a la resonance cyclotron electronique de nanotubes de carbone monoparois et nanotubes ainsi obtenus

Publications (1)

Publication Number Publication Date
DE60135014D1 true DE60135014D1 (de) 2008-09-04

Family

ID=8855825

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60135014T Expired - Lifetime DE60135014D1 (de) 2000-10-27 2001-10-26 Verfahren und vorrichtung zum ecr plasma aufbringen von einwandigen kohlenstoffnanoröhren sowie erhaltene nanoröhren

Country Status (8)

Country Link
US (1) US7303790B2 (de)
EP (1) EP1341718B1 (de)
JP (2) JP4109108B2 (de)
AT (1) ATE402118T1 (de)
DE (1) DE60135014D1 (de)
ES (1) ES2311029T3 (de)
FR (1) FR2815954B1 (de)
WO (1) WO2002034669A1 (de)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2795906B1 (fr) * 1999-07-01 2001-08-17 Commissariat Energie Atomique Procede et dispositif de depot par plasma a la resonance cyclotron electronique de couches de tissus de nonofibres de carbone et couches de tissus ainsi obtenus
AU2005209634B2 (en) * 1999-08-11 2009-06-18 Hennara Investments Limited Gas Storage on an Adsorbent with Exfoliated Laminae
FR2833935B1 (fr) * 2001-12-26 2004-01-30 Commissariat Energie Atomique Procede de fabrication d'au moins un nanotube entre deux elements electriquement conducteurs et dispositif pour mettre en oeuvre un tel procede
US8154093B2 (en) 2002-01-16 2012-04-10 Nanomix, Inc. Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices
US8152991B2 (en) * 2005-10-27 2012-04-10 Nanomix, Inc. Ammonia nanosensors, and environmental control system
US7714398B2 (en) * 2002-09-05 2010-05-11 Nanomix, Inc. Nanoelectronic measurement system for physiologic gases and improved nanosensor for carbon dioxide
US20070048180A1 (en) * 2002-09-05 2007-03-01 Gabriel Jean-Christophe P Nanoelectronic breath analyzer and asthma monitor
US7522040B2 (en) * 2004-04-20 2009-04-21 Nanomix, Inc. Remotely communicating, battery-powered nanostructure sensor devices
US7547931B2 (en) * 2003-09-05 2009-06-16 Nanomix, Inc. Nanoelectronic capnometer adaptor including a nanoelectric sensor selectively sensitive to at least one gaseous constituent of exhaled breath
US20070048181A1 (en) * 2002-09-05 2007-03-01 Chang Daniel M Carbon dioxide nanosensor, and respiratory CO2 monitors
CA2584508A1 (en) 2002-05-09 2003-11-09 Institut National De La Recherche Scientifique Method for producing single-wall carbon nanotubes
US7948041B2 (en) 2005-05-19 2011-05-24 Nanomix, Inc. Sensor having a thin-film inhibition layer
US20060263255A1 (en) * 2002-09-04 2006-11-23 Tzong-Ru Han Nanoelectronic sensor system and hydrogen-sensitive functionalization
US20070114573A1 (en) * 2002-09-04 2007-05-24 Tzong-Ru Han Sensor device with heated nanostructure
JP3998241B2 (ja) * 2002-10-18 2007-10-24 キヤノン株式会社 カーボンファイバーが固定された基体の製造方法
US7364709B2 (en) * 2002-10-30 2008-04-29 Fuji Xerox Co., Ltd. Manufacturing apparatus and method for carbon nanotube
US6841002B2 (en) * 2002-11-22 2005-01-11 Cdream Display Corporation Method for forming carbon nanotubes with post-treatment step
US6841003B2 (en) * 2002-11-22 2005-01-11 Cdream Display Corporation Method for forming carbon nanotubes with intermediate purification steps
JP2004362960A (ja) * 2003-06-05 2004-12-24 Akio Hiraki 電子放出素子およびその製造方法
JP2007505323A (ja) * 2003-09-12 2007-03-08 ナノミックス・インコーポレーテッド 二酸化炭素用ナノ電子センサー
CN1890175B (zh) * 2003-12-03 2010-04-07 理想星株式会社 衍生富勒烯的制造装置及制造方法
JP2005259600A (ja) * 2004-03-12 2005-09-22 Nano Giken Kk 高効率電子エミッタおよびその製造方法
GB0426863D0 (en) * 2004-12-07 2005-01-12 Univ Southampton Method of manufacturing carbon nanotubes
JP2006306704A (ja) * 2005-03-30 2006-11-09 Sonac Kk 炭素膜の製造方法および炭素膜
JP2007229825A (ja) * 2006-02-27 2007-09-13 Hirosaki Univ 微小電気機械構造、その製造方法および微小電気機械素子
US7714248B2 (en) * 2006-05-24 2010-05-11 Kuan-Jiuh Lin Microwave plasma generator
WO2008097321A2 (en) * 2006-06-05 2008-08-14 The Board Of Trustees Of The University Of Illinois Method for growing arrays of aligned nanostructures on surfaces
US20080008844A1 (en) * 2006-06-05 2008-01-10 Martin Bettge Method for growing arrays of aligned nanostructures on surfaces
US20080006319A1 (en) * 2006-06-05 2008-01-10 Martin Bettge Photovoltaic and photosensing devices based on arrays of aligned nanostructures
KR100841341B1 (ko) 2007-02-08 2008-06-26 세메스 주식회사 탄소나노튜브 생산 설비
ITMI20071867A1 (it) * 2007-09-28 2009-03-29 Petr Nozar Sistema e procedimento per la preparazione di nanotubi di carbonio a parete singola.
FR2933532B1 (fr) * 2008-07-02 2010-09-03 Commissariat Energie Atomique Dispositif generateur d'ions a resonance cyclotronique electronique
EP2251452B1 (de) 2009-05-13 2018-07-18 SiO2 Medical Products, Inc. Pecvd-anlage zum beschichten von gefässen
US9545360B2 (en) 2009-05-13 2017-01-17 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
JP2013501921A (ja) 2009-08-07 2013-01-17 ナノミックス・インコーポレーテッド 磁性炭素ナノチューブに基づく生体検出
WO2011109421A1 (en) * 2010-03-01 2011-09-09 Auburn University Novel nanocomposite for sustainability of infrastructure
TW201141316A (en) * 2010-05-04 2011-11-16 Ind Tech Res Inst A linear-type microwave plasma source using rectangular waveguide with a biased slot as the plasma reactor
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
TWI434624B (zh) * 2010-07-02 2014-04-11 Ind Tech Res Inst 電子迴旋共振磁性模組與電子迴旋共振裝置
US8222125B2 (en) * 2010-08-12 2012-07-17 Ovshinsky Innovation, Llc Plasma deposition of amorphous semiconductors at microwave frequencies
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
WO2012110105A1 (en) 2011-02-18 2012-08-23 Toyota Motor Europe Nv/Sa Sputtering magnetron assembly
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
EP2776603B1 (de) 2011-11-11 2019-03-06 SiO2 Medical Products, Inc. Passivierungs-, ph-schutz- oder schmierbeschichtung für arzneimittelverpackung, beschichtungsverfahren und vorrichtung
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
TWI458678B (zh) * 2011-12-30 2014-11-01 Ind Tech Res Inst 石墨烯層的形成方法
US9664626B2 (en) 2012-11-01 2017-05-30 Sio2 Medical Products, Inc. Coating inspection method
WO2014078666A1 (en) 2012-11-16 2014-05-22 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
KR102211950B1 (ko) 2012-11-30 2021-02-04 에스아이오2 메디컬 프로덕츠, 인크. 의료용 주사기 카트리지 등의 pecvd 증착 균일성 제어
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
EP2961858B1 (de) 2013-03-01 2022-09-07 Si02 Medical Products, Inc. Beschichtete spritze.
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
CN105392916B (zh) 2013-03-11 2019-03-08 Sio2医药产品公司 涂布包装材料
EP2971227B1 (de) 2013-03-15 2017-11-15 Si02 Medical Products, Inc. Beschichtungsverfahren.
WO2015148471A1 (en) 2014-03-28 2015-10-01 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
CN103938170B (zh) * 2014-04-10 2016-06-29 西安交通大学 一种ecr电子照射密度控制碳膜中纳晶石墨烯尺寸的方法
CA3204930A1 (en) 2015-08-18 2017-02-23 Sio2 Medical Products, Inc. Pharmaceutical and other packaging with low oxygen transmission rate

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2546358B1 (fr) * 1983-05-20 1985-07-05 Commissariat Energie Atomique Source d'ions a resonance cyclotronique des electrons
KR100365444B1 (ko) * 1996-09-18 2004-01-24 가부시끼가이샤 도시바 진공마이크로장치와이를이용한화상표시장치
FR2774251B1 (fr) 1998-01-26 2000-02-25 Commissariat Energie Atomique Source a plasma micro-onde lineaire en aimants permanents
FR2780601B1 (fr) 1998-06-24 2000-07-21 Commissariat Energie Atomique Procede de depot par plasma a la resonance cyclotron electronique de couches de carbone emetteur d'electrons sous l'effet d'un champ electrique applique
TW452604B (en) * 1999-01-11 2001-09-01 Shih Han Jang Process for synthesizing one-dimensional nanosubstances by electron cyclotron resonance chemical vapor deposition
JP2000277002A (ja) * 1999-03-25 2000-10-06 Matsushita Electric Ind Co Ltd 電子放出素子の製造方法
FR2795906B1 (fr) * 1999-07-01 2001-08-17 Commissariat Energie Atomique Procede et dispositif de depot par plasma a la resonance cyclotron electronique de couches de tissus de nonofibres de carbone et couches de tissus ainsi obtenus
US6420092B1 (en) * 1999-07-14 2002-07-16 Cheng-Jer Yang Low dielectric constant nanotube
US6277318B1 (en) * 1999-08-18 2001-08-21 Agere Systems Guardian Corp. Method for fabrication of patterned carbon nanotube films
JP2001192829A (ja) * 2000-01-05 2001-07-17 Ulvac Japan Ltd カーボンナノチューブ薄膜形成ecrプラズマcvd装置及び該薄膜の形成方法
JP3595233B2 (ja) * 2000-02-16 2004-12-02 株式会社ノリタケカンパニーリミテド 電子放出源及びその製造方法
TW464896B (en) * 2000-08-03 2001-11-21 Nat Science Council Method of manufacturing a field emitting display
JP3463091B2 (ja) * 2000-08-29 2003-11-05 独立行政法人産業技術総合研究所 カーボンナノチューブの製造方法
US6495258B1 (en) * 2000-09-20 2002-12-17 Auburn University Structures with high number density of carbon nanotubes and 3-dimensional distribution
JP2002146533A (ja) * 2000-11-06 2002-05-22 Mitsubishi Electric Corp 炭素薄体、炭素薄体形成方法および電界放出型電子源
US7077982B2 (en) * 2001-03-23 2006-07-18 Fuji Photo Film Co., Ltd. Molecular electric wire, molecular electric wire circuit using the same and process for producing the molecular electric wire circuit
JP2003016954A (ja) * 2001-04-25 2003-01-17 Sony Corp 電子放出装置及びその製造方法、冷陰極電界電子放出素子及びその製造方法、並びに、冷陰極電界電子放出表示装置及びその製造方法
FR2833935B1 (fr) * 2001-12-26 2004-01-30 Commissariat Energie Atomique Procede de fabrication d'au moins un nanotube entre deux elements electriquement conducteurs et dispositif pour mettre en oeuvre un tel procede
US8907323B2 (en) * 2002-04-23 2014-12-09 Philip D. Freedman Microprocessor assembly
US6911373B2 (en) * 2002-09-20 2005-06-28 Intel Corporation Ultra-high capacitance device based on nanostructures
US7094679B1 (en) * 2003-03-11 2006-08-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Carbon nanotube interconnect
US7067237B2 (en) * 2003-06-28 2006-06-27 Samsung Electronics Co., Ltd. Method for forming pattern of one-dimensional nanostructure
KR101190136B1 (ko) * 2004-05-10 2012-10-12 가부시키가이샤 알박 카본 나노 튜브의 제작 방법 및 그 방법을 실시하는플라즈마 화학기상증착 장치

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WO2002034669A1 (fr) 2002-05-02
ES2311029T3 (es) 2009-02-01
JP2004512247A (ja) 2004-04-22
US20040011291A1 (en) 2004-01-22
US7303790B2 (en) 2007-12-04
EP1341718A1 (de) 2003-09-10
FR2815954B1 (fr) 2003-02-21
EP1341718B1 (de) 2008-07-23
JP2007015922A (ja) 2007-01-25
ATE402118T1 (de) 2008-08-15

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