DE60129024D1 - Zur bilderzeugung mit tiefer uv-strahlung geeignete photoresistzusammensetzung und diese verwendendes bilderzeugungsverfahren - Google Patents

Zur bilderzeugung mit tiefer uv-strahlung geeignete photoresistzusammensetzung und diese verwendendes bilderzeugungsverfahren

Info

Publication number
DE60129024D1
DE60129024D1 DE60129024T DE60129024T DE60129024D1 DE 60129024 D1 DE60129024 D1 DE 60129024D1 DE 60129024 T DE60129024 T DE 60129024T DE 60129024 T DE60129024 T DE 60129024T DE 60129024 D1 DE60129024 D1 DE 60129024D1
Authority
DE
Germany
Prior art keywords
radiation
photoresistic
depositing
deep
production process
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60129024T
Other languages
English (en)
Other versions
DE60129024T2 (de
Inventor
M Dalil Rahman
Munirathna Padmanaban
Ralph R Dammel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
AZ Electronic Materials USA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials USA Corp filed Critical AZ Electronic Materials USA Corp
Application granted granted Critical
Publication of DE60129024D1 publication Critical patent/DE60129024D1/de
Publication of DE60129024T2 publication Critical patent/DE60129024T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polymerisation Methods In General (AREA)
DE60129024T 2000-07-19 2001-07-11 Zur bilderzeugung mit tiefer uv-strahlung geeignete photoresistzusammensetzung und diese verwendendes bilderzeugungsverfahren Expired - Fee Related DE60129024T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/619,336 US6447980B1 (en) 2000-07-19 2000-07-19 Photoresist composition for deep UV and process thereof
US619336 2000-07-19
PCT/EP2001/008026 WO2002006901A2 (en) 2000-07-19 2001-07-11 Photoresist composition for deep uv and process thereof

Publications (2)

Publication Number Publication Date
DE60129024D1 true DE60129024D1 (de) 2007-08-02
DE60129024T2 DE60129024T2 (de) 2008-02-21

Family

ID=24481461

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60129024T Expired - Fee Related DE60129024T2 (de) 2000-07-19 2001-07-11 Zur bilderzeugung mit tiefer uv-strahlung geeignete photoresistzusammensetzung und diese verwendendes bilderzeugungsverfahren

Country Status (10)

Country Link
US (1) US6447980B1 (de)
EP (1) EP1311908B1 (de)
JP (1) JP2004504635A (de)
KR (1) KR100732929B1 (de)
CN (1) CN1230715C (de)
AT (1) ATE365340T1 (de)
DE (1) DE60129024T2 (de)
MY (1) MY124931A (de)
TW (1) TW591323B (de)
WO (1) WO2002006901A2 (de)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100382960B1 (ko) * 1998-07-03 2003-05-09 닛뽕덴끼 가부시끼가이샤 락톤 구조를 갖는 (메트)아크릴레이트 유도체, 중합체,포토레지스트 조성물, 및 이것을 사용한 패턴 형성 방법
US6517994B2 (en) * 2001-04-10 2003-02-11 Shin-Etsu Chemical Co., Ltd. Lactone ring-containing (meth)acrylate and polymer thereof for photoresist composition
US6610465B2 (en) * 2001-04-11 2003-08-26 Clariant Finance (Bvi) Limited Process for producing film forming resins for photoresist compositions
US7070914B2 (en) * 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US20030215736A1 (en) * 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating
US7109383B2 (en) 2002-09-27 2006-09-19 Central Glass Company, Limited Fluorine-containing allyl ether compounds, their copolymers, and resist compositions and anti-reflection film materials using such copolymers
DE10246546B4 (de) * 2002-09-30 2006-10-05 Infineon Technologies Ag Verwendung eines Resistsystems und Lithographieverfahren zur Herstellung von Halbleiterbauelementen
US7087356B2 (en) * 2002-09-30 2006-08-08 International Business Machines Corporation 193nm resist with improved post-exposure properties
JP4235466B2 (ja) * 2003-02-24 2009-03-11 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法
JP4012480B2 (ja) * 2003-03-28 2007-11-21 Ａｚエレクトロニックマテリアルズ株式会社 微細パターン形成補助剤及びその製造法
US7037559B2 (en) * 2003-05-01 2006-05-02 International Business Machines Corporation Immersion plating and plated structures
US7189491B2 (en) * 2003-12-11 2007-03-13 Az Electronic Materials Usa Corp. Photoresist composition for deep UV and process thereof
US7033728B2 (en) * 2003-12-29 2006-04-25 Az Electronic Materials Usa Corp. Photoresist composition
US7473512B2 (en) * 2004-03-09 2009-01-06 Az Electronic Materials Usa Corp. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7846637B2 (en) * 2004-04-27 2010-12-07 Tokyo Ohka Kogyo Co., Ltd. Material for forming resist protective film for use in liquid immersion lithography process and method for forming resist pattern using the protective film
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
KR100599076B1 (ko) * 2004-05-31 2006-07-13 삼성전자주식회사 포토레지스트 조성물 및 이를 이용한 패턴 형성 방법
JP4368267B2 (ja) * 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
US20060054090A1 (en) * 2004-09-15 2006-03-16 Applied Materials, Inc. PECVD susceptor support construction
US7429410B2 (en) * 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US7595141B2 (en) * 2004-10-26 2009-09-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
US7537879B2 (en) 2004-11-22 2009-05-26 Az Electronic Materials Usa Corp. Photoresist composition for deep UV and process thereof
JP4498939B2 (ja) * 2005-02-01 2010-07-07 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP5002137B2 (ja) * 2005-07-28 2012-08-15 富士フイルム株式会社 化学増幅型レジスト組成物及びその製造方法
JP4699140B2 (ja) * 2005-08-29 2011-06-08 東京応化工業株式会社 パターン形成方法
US7704670B2 (en) * 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
US20070298349A1 (en) * 2006-06-22 2007-12-27 Ruzhi Zhang Antireflective Coating Compositions Comprising Siloxane Polymer
US7638262B2 (en) 2006-08-10 2009-12-29 Az Electronic Materials Usa Corp. Antireflective composition for photoresists
US7416834B2 (en) * 2006-09-27 2008-08-26 Az Electronic Materials Usa Corp. Antireflective coating compositions
US7666575B2 (en) * 2006-10-18 2010-02-23 Az Electronic Materials Usa Corp Antireflective coating compositions
US20080171270A1 (en) * 2007-01-16 2008-07-17 Munirathna Padmanaban Polymers Useful in Photoresist Compositions and Compositions Thereof
US7824844B2 (en) * 2007-01-19 2010-11-02 Az Electronic Materials Usa Corp. Solvent mixtures for antireflective coating compositions for photoresists
US8026040B2 (en) 2007-02-20 2011-09-27 Az Electronic Materials Usa Corp. Silicone coating composition
US7736837B2 (en) * 2007-02-20 2010-06-15 Az Electronic Materials Usa Corp. Antireflective coating composition based on silicon polymer
KR101523393B1 (ko) 2007-02-27 2015-05-27 이엠디 퍼포먼스 머티리얼스 코프. 규소를 주성분으로 하는 반사 방지 코팅 조성물
US7923200B2 (en) * 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
JP5069494B2 (ja) * 2007-05-01 2012-11-07 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
US8017296B2 (en) * 2007-05-22 2011-09-13 Az Electronic Materials Usa Corp. Antireflective coating composition comprising fused aromatic rings
US20080317973A1 (en) * 2007-06-22 2008-12-25 White John M Diffuser support
US20090035704A1 (en) * 2007-08-03 2009-02-05 Hong Zhuang Underlayer Coating Composition Based on a Crosslinkable Polymer
US8252503B2 (en) * 2007-08-24 2012-08-28 Az Electronic Materials Usa Corp. Photoresist compositions
US8088548B2 (en) * 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
US8039201B2 (en) * 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US20090162800A1 (en) * 2007-12-20 2009-06-25 David Abdallah Process for Imaging a Photoresist Coated over an Antireflective Coating
TWI452419B (zh) * 2008-01-28 2014-09-11 Az Electronic Mat Ip Japan Kk 細微圖案光罩及其製造方法、及使用其之細微圖案形成方法
WO2009104685A1 (ja) * 2008-02-21 2009-08-27 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
US7989144B2 (en) * 2008-04-01 2011-08-02 Az Electronic Materials Usa Corp Antireflective coating composition
US20090253080A1 (en) * 2008-04-02 2009-10-08 Dammel Ralph R Photoresist Image-Forming Process Using Double Patterning
US20090253081A1 (en) * 2008-04-02 2009-10-08 David Abdallah Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step
US8097082B2 (en) * 2008-04-28 2012-01-17 Applied Materials, Inc. Nonplanar faceplate for a plasma processing chamber
KR101039310B1 (ko) * 2008-05-02 2011-06-08 한국수자원공사 복합형 능동 전력 필터
US7745077B2 (en) * 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
US8221965B2 (en) * 2008-07-08 2012-07-17 Az Electronic Materials Usa Corp. Antireflective coating compositions
US20100015550A1 (en) * 2008-07-17 2010-01-21 Weihong Liu Dual damascene via filling composition
US20100040838A1 (en) * 2008-08-15 2010-02-18 Abdallah David J Hardmask Process for Forming a Reverse Tone Image
US8455176B2 (en) * 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
US20100119980A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US20100119979A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US8084186B2 (en) * 2009-02-10 2011-12-27 Az Electronic Materials Usa Corp. Hardmask process for forming a reverse tone image using polysilazane
US20100316949A1 (en) * 2009-06-10 2010-12-16 Rahman M Dalil Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings
US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
US8551686B2 (en) 2009-10-30 2013-10-08 Az Electronic Materials Usa Corp. Antireflective composition for photoresists
US8486609B2 (en) * 2009-12-23 2013-07-16 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US8445181B2 (en) 2010-06-03 2013-05-21 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US8852848B2 (en) 2010-07-28 2014-10-07 Z Electronic Materials USA Corp. Composition for coating over a photoresist pattern
US20120122029A1 (en) 2010-11-11 2012-05-17 Takanori Kudo Underlayer Developable Coating Compositions and Processes Thereof
US8465902B2 (en) 2011-02-08 2013-06-18 Az Electronic Materials Usa Corp. Underlayer coating composition and processes thereof
US8906590B2 (en) 2011-03-30 2014-12-09 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US8623589B2 (en) 2011-06-06 2014-01-07 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions and processes thereof
US8568958B2 (en) 2011-06-21 2013-10-29 Az Electronic Materials Usa Corp. Underlayer composition and process thereof
JP5889568B2 (ja) 2011-08-11 2016-03-22 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 酸化タングステン膜形成用組成物およびそれを用いた酸化タングステン膜の製造法
US20130108956A1 (en) 2011-11-01 2013-05-02 Az Electronic Materials Usa Corp. Nanocomposite positive photosensitive composition and use thereof
KR101633657B1 (ko) * 2011-12-28 2016-06-28 금호석유화학 주식회사 레지스트용 첨가제 및 이를 포함하는 레지스트 조성물
US8906592B2 (en) 2012-08-01 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
US9315636B2 (en) 2012-12-07 2016-04-19 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds, their compositions and methods
KR101273667B1 (ko) * 2012-12-14 2013-06-17 주식회사 폴리사이언텍 유연성이 우수한 고내열투명성 환상올레핀 공중합체 및 이로부터 제조된 플렉시블 기판
US9291909B2 (en) 2013-05-17 2016-03-22 Az Electronic Materials (Luxembourg) S.A.R.L. Composition comprising a polymeric thermal acid generator and processes thereof
US9152051B2 (en) 2013-06-13 2015-10-06 Az Electronics Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
US9201305B2 (en) 2013-06-28 2015-12-01 Az Electronic Materials (Luxembourg) S.A.R.L. Spin-on compositions of soluble metal oxide carboxylates and methods of their use
US9296922B2 (en) 2013-08-30 2016-03-29 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds as hardmasks and filling materials, their compositions and methods of use
US9409793B2 (en) 2014-01-14 2016-08-09 Az Electronic Materials (Luxembourg) S.A.R.L. Spin coatable metallic hard mask compositions and processes thereof
US9418836B2 (en) 2014-01-14 2016-08-16 Az Electronic Materials (Luxembourg) S.A.R.L. Polyoxometalate and heteropolyoxometalate compositions and methods for their use
US9274426B2 (en) 2014-04-29 2016-03-01 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective coating compositions and processes thereof
US9994538B2 (en) 2015-02-02 2018-06-12 Basf Se Latent acids and their use
US9499698B2 (en) 2015-02-11 2016-11-22 Az Electronic Materials (Luxembourg)S.A.R.L. Metal hardmask composition and processes for forming fine patterns on semiconductor substrates
US10241409B2 (en) 2015-12-22 2019-03-26 AZ Electronic Materials (Luxembourg) S.à.r.l. Materials containing metal oxides, processes for making same, and processes for using same
TWI786656B (zh) 2016-12-21 2022-12-11 德商馬克專利公司 在矽基板上塗佈硬遮罩組合物之方法
WO2019048393A1 (en) 2017-09-06 2019-03-14 AZ Electronic Materials (Luxembourg) S.à.r.l. AN INORGANIC OXIDE-CONTAINING VINYL DEPOSITION COMPOSITION USEFUL AS HARD MASKS AND FILLING MATERIALS HAVING ENHANCED THERMAL STABILITY
CN117295693A (zh) 2021-05-06 2023-12-26 默克专利股份有限公司 旋涂式金属有机配制剂
CN114085311B (zh) * 2021-12-30 2023-03-14 宁波南大光电材料有限公司 一种制备高纯光刻胶树脂的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
EP0440374B1 (de) 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemisch verstärktes Photolack-Material
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
KR100265597B1 (ko) 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
TW457277B (en) * 1998-05-11 2001-10-01 Shinetsu Chemical Co Ester compounds, polymers, resist composition and patterning process
KR100301065B1 (ko) * 1999-08-16 2001-09-22 윤종용 백본이 환상 구조를 가지는 감광성 폴리머와 이를 포함하는 레지스트 조성물
EP1085379B1 (de) 1999-09-17 2006-01-04 JSR Corporation Strahlungsempfindliche Harzzusammensetzung
JP4123654B2 (ja) * 1999-10-13 2008-07-23 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP2001215703A (ja) 2000-02-01 2001-08-10 Daicel Chem Ind Ltd フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物

Also Published As

Publication number Publication date
WO2002006901A2 (en) 2002-01-24
CN1230715C (zh) 2005-12-07
DE60129024T2 (de) 2008-02-21
KR100732929B1 (ko) 2007-06-29
WO2002006901A3 (en) 2002-08-22
KR20030079908A (ko) 2003-10-10
EP1311908A2 (de) 2003-05-21
EP1311908B1 (de) 2007-06-20
US6447980B1 (en) 2002-09-10
ATE365340T1 (de) 2007-07-15
MY124931A (en) 2006-07-31
CN1443315A (zh) 2003-09-17
JP2004504635A (ja) 2004-02-12
TW591323B (en) 2004-06-11

Similar Documents

Publication Publication Date Title
DE60129024D1 (de) Zur bilderzeugung mit tiefer uv-strahlung geeignete photoresistzusammensetzung und diese verwendendes bilderzeugungsverfahren
TW200632554A (en) Photoresist composition for deep UV and process thereof
MY130283A (en) Photoresist composition for deep uv radiation containing an additive
DE69222963T2 (de) Abbildungsverfahren zur Herstellung von Mikrovorrichtungen
MXPA02011900A (es) Composicion fotosensible para fabricacion de fotorresistente.
CY1108931T1 (el) Μεθοδος παρασκευης παραγωγων βενζιμιδαζολ-2-υλο-κινολινονης
ATE258379T1 (de) Nukleinsäure, die für einen tumor abstossungsantigenvorläufer kodiert
ATE357221T1 (de) Kolon-spezifisches arzneistofffreisetzungssystem
EP1148717A3 (de) Verfahren und Vorrichtung zum Photographieren von fluoreszierenden und reflektierten Lichtbildern
AR028705A1 (es) Bis-arilsulfonas
DE69025831D1 (de) Elektronemittierende Vorrichtung; Herstellungsverfahren Elektronemittierende Vorrichtung, Herstellungsverfahren derselben und Anzeigegerät und Elektronstrahl- Schreibvorrichtung, welche diese Vorrichtung verwendet.
FR2826961B1 (fr) Procede de preparation d'anhydride (meth) acrylique
ATE137795T1 (de) Verbessertes träger- und freisetzungssystem von riechstoffen für die wäschebehandlung
DE69327890D1 (de) Verfahren zur Herstellung von 2-(un)substituierten 4-Alkylimidazolen
BR0213481A (pt) Sondas
ATE159233T1 (de) Verfahren zur reinigung von für den menschlichen verbrauch bestimmtem wasser
DK1192204T3 (da) Fremgangsmåde til oprensning af aldehyd-urenheder
ATE359999T1 (de) 4-organothio-2-cyclopentenonen und 3-organothio-2-cyclopentanonen, deren herstellungsverfahren und pharmazeutischen anwendungen
NO20014885L (no) Fremgangsmåte til fremstilling av en amidforbindelse
DK0640095T3 (da) Fremgangsmåde til fremstilling af vancomycin
HUP0303599A2 (hu) Fotoaktivált előillatanyagok, eljárás adott helyre való továbbításukra és illatharmonikus továbbító rendszer
NO174669C (no) Analogifremgangsmåte for fremstilling av terapeutisk aktive benzotiopyranylaminer
ATE216702T1 (de) Silylierungsprocess
ATE248862T1 (de) Verfahren zur herstellung von polyguluronsäuren
DE69306701T2 (de) Verfahren zur Herstellung von Natriumhydrosulfit mit hohem Ausbringen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee