ATE365340T1 - Zur bilderzeugung mit tiefer uv-strahlung geeignete photoresistzusammensetzung und diese verwendendes bilderzeugungsverfahren - Google Patents
Zur bilderzeugung mit tiefer uv-strahlung geeignete photoresistzusammensetzung und diese verwendendes bilderzeugungsverfahrenInfo
- Publication number
- ATE365340T1 ATE365340T1 AT01967154T AT01967154T ATE365340T1 AT E365340 T1 ATE365340 T1 AT E365340T1 AT 01967154 T AT01967154 T AT 01967154T AT 01967154 T AT01967154 T AT 01967154T AT E365340 T1 ATE365340 T1 AT E365340T1
- Authority
- AT
- Austria
- Prior art keywords
- imaging
- radiation
- deep
- same
- photoresist composition
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title abstract 3
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 2
- 230000005855 radiation Effects 0.000 title abstract 2
- 239000002253 acid Substances 0.000 abstract 2
- -1 alicyclic hydrocarbon olefin Chemical class 0.000 abstract 2
- 229920000642 polymer Polymers 0.000 abstract 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 abstract 1
- 239000004215 Carbon black (E152) Substances 0.000 abstract 1
- 239000012670 alkaline solution Substances 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 125000004122 cyclic group Chemical group 0.000 abstract 1
- 229930195733 hydrocarbon Natural products 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Polymerisation Methods In General (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/619,336 US6447980B1 (en) | 2000-07-19 | 2000-07-19 | Photoresist composition for deep UV and process thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE365340T1 true ATE365340T1 (de) | 2007-07-15 |
Family
ID=24481461
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT01967154T ATE365340T1 (de) | 2000-07-19 | 2001-07-11 | Zur bilderzeugung mit tiefer uv-strahlung geeignete photoresistzusammensetzung und diese verwendendes bilderzeugungsverfahren |
Country Status (10)
Country | Link |
---|---|
US (1) | US6447980B1 (de) |
EP (1) | EP1311908B1 (de) |
JP (1) | JP2004504635A (de) |
KR (1) | KR100732929B1 (de) |
CN (1) | CN1230715C (de) |
AT (1) | ATE365340T1 (de) |
DE (1) | DE60129024T2 (de) |
MY (1) | MY124931A (de) |
TW (1) | TW591323B (de) |
WO (1) | WO2002006901A2 (de) |
Families Citing this family (92)
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WO2000001684A1 (fr) * | 1998-07-03 | 2000-01-13 | Nec Corporation | Derives de (meth)acrylate porteurs d'une structure lactone, compositions polymeres et photoresists et procede de formation de modeles a l'aide de ceux-ci |
US6517994B2 (en) * | 2001-04-10 | 2003-02-11 | Shin-Etsu Chemical Co., Ltd. | Lactone ring-containing (meth)acrylate and polymer thereof for photoresist composition |
US6610465B2 (en) * | 2001-04-11 | 2003-08-26 | Clariant Finance (Bvi) Limited | Process for producing film forming resins for photoresist compositions |
US20030215736A1 (en) * | 2002-01-09 | 2003-11-20 | Oberlander Joseph E. | Negative-working photoimageable bottom antireflective coating |
US7070914B2 (en) * | 2002-01-09 | 2006-07-04 | Az Electronic Materials Usa Corp. | Process for producing an image using a first minimum bottom antireflective coating composition |
US7109383B2 (en) | 2002-09-27 | 2006-09-19 | Central Glass Company, Limited | Fluorine-containing allyl ether compounds, their copolymers, and resist compositions and anti-reflection film materials using such copolymers |
DE10246546B4 (de) * | 2002-09-30 | 2006-10-05 | Infineon Technologies Ag | Verwendung eines Resistsystems und Lithographieverfahren zur Herstellung von Halbleiterbauelementen |
US7087356B2 (en) * | 2002-09-30 | 2006-08-08 | International Business Machines Corporation | 193nm resist with improved post-exposure properties |
JP4235466B2 (ja) * | 2003-02-24 | 2009-03-11 | Azエレクトロニックマテリアルズ株式会社 | 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法 |
JP4012480B2 (ja) * | 2003-03-28 | 2007-11-21 | Azエレクトロニックマテリアルズ株式会社 | 微細パターン形成補助剤及びその製造法 |
US7037559B2 (en) * | 2003-05-01 | 2006-05-02 | International Business Machines Corporation | Immersion plating and plated structures |
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KR100887202B1 (ko) * | 2004-04-27 | 2009-03-06 | 도오꾜오까고오교 가부시끼가이샤 | 액침 노광 프로세스용 레지스트 보호막 형성용 재료, 및 이보호막을 이용한 레지스트 패턴 형성 방법 |
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US8465902B2 (en) | 2011-02-08 | 2013-06-18 | Az Electronic Materials Usa Corp. | Underlayer coating composition and processes thereof |
US8906590B2 (en) | 2011-03-30 | 2014-12-09 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
US8623589B2 (en) | 2011-06-06 | 2014-01-07 | Az Electronic Materials Usa Corp. | Bottom antireflective coating compositions and processes thereof |
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JP5889568B2 (ja) | 2011-08-11 | 2016-03-22 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | 酸化タングステン膜形成用組成物およびそれを用いた酸化タングステン膜の製造法 |
US20130108956A1 (en) | 2011-11-01 | 2013-05-02 | Az Electronic Materials Usa Corp. | Nanocomposite positive photosensitive composition and use thereof |
KR101633657B1 (ko) * | 2011-12-28 | 2016-06-28 | 금호석유화학 주식회사 | 레지스트용 첨가제 및 이를 포함하는 레지스트 조성물 |
US8906592B2 (en) | 2012-08-01 | 2014-12-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Antireflective coating composition and process thereof |
US9315636B2 (en) | 2012-12-07 | 2016-04-19 | Az Electronic Materials (Luxembourg) S.A.R.L. | Stable metal compounds, their compositions and methods |
KR101273667B1 (ko) * | 2012-12-14 | 2013-06-17 | 주식회사 폴리사이언텍 | 유연성이 우수한 고내열투명성 환상올레핀 공중합체 및 이로부터 제조된 플렉시블 기판 |
US9291909B2 (en) | 2013-05-17 | 2016-03-22 | Az Electronic Materials (Luxembourg) S.A.R.L. | Composition comprising a polymeric thermal acid generator and processes thereof |
US9152051B2 (en) | 2013-06-13 | 2015-10-06 | Az Electronics Materials (Luxembourg) S.A.R.L. | Antireflective coating composition and process thereof |
US9201305B2 (en) | 2013-06-28 | 2015-12-01 | Az Electronic Materials (Luxembourg) S.A.R.L. | Spin-on compositions of soluble metal oxide carboxylates and methods of their use |
US9296922B2 (en) | 2013-08-30 | 2016-03-29 | Az Electronic Materials (Luxembourg) S.A.R.L. | Stable metal compounds as hardmasks and filling materials, their compositions and methods of use |
US9418836B2 (en) | 2014-01-14 | 2016-08-16 | Az Electronic Materials (Luxembourg) S.A.R.L. | Polyoxometalate and heteropolyoxometalate compositions and methods for their use |
US9409793B2 (en) | 2014-01-14 | 2016-08-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Spin coatable metallic hard mask compositions and processes thereof |
US9274426B2 (en) | 2014-04-29 | 2016-03-01 | Az Electronic Materials (Luxembourg) S.A.R.L. | Antireflective coating compositions and processes thereof |
KR102537349B1 (ko) | 2015-02-02 | 2023-05-26 | 바스프 에스이 | 잠재성 산 및 그의 용도 |
US9499698B2 (en) | 2015-02-11 | 2016-11-22 | Az Electronic Materials (Luxembourg)S.A.R.L. | Metal hardmask composition and processes for forming fine patterns on semiconductor substrates |
US10241409B2 (en) | 2015-12-22 | 2019-03-26 | AZ Electronic Materials (Luxembourg) S.à.r.l. | Materials containing metal oxides, processes for making same, and processes for using same |
TWI786656B (zh) | 2016-12-21 | 2022-12-11 | 德商馬克專利公司 | 在矽基板上塗佈硬遮罩組合物之方法 |
WO2019048393A1 (en) | 2017-09-06 | 2019-03-14 | AZ Electronic Materials (Luxembourg) S.à.r.l. | AN INORGANIC OXIDE-CONTAINING VINYL DEPOSITION COMPOSITION USEFUL AS HARD MASKS AND FILLING MATERIALS HAVING ENHANCED THERMAL STABILITY |
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2000
- 2000-07-19 US US09/619,336 patent/US6447980B1/en not_active Expired - Fee Related
-
2001
- 2001-06-12 TW TW090114154A patent/TW591323B/zh not_active IP Right Cessation
- 2001-07-11 WO PCT/EP2001/008026 patent/WO2002006901A2/en active IP Right Grant
- 2001-07-11 DE DE60129024T patent/DE60129024T2/de not_active Expired - Fee Related
- 2001-07-11 AT AT01967154T patent/ATE365340T1/de not_active IP Right Cessation
- 2001-07-11 CN CNB018129749A patent/CN1230715C/zh not_active Expired - Fee Related
- 2001-07-11 EP EP01967154A patent/EP1311908B1/de not_active Expired - Lifetime
- 2001-07-11 JP JP2002512748A patent/JP2004504635A/ja active Pending
- 2001-07-11 KR KR1020037000610A patent/KR100732929B1/ko not_active IP Right Cessation
- 2001-07-19 MY MYPI20013430 patent/MY124931A/en unknown
Also Published As
Publication number | Publication date |
---|---|
CN1230715C (zh) | 2005-12-07 |
TW591323B (en) | 2004-06-11 |
MY124931A (en) | 2006-07-31 |
EP1311908B1 (de) | 2007-06-20 |
WO2002006901A2 (en) | 2002-01-24 |
KR100732929B1 (ko) | 2007-06-29 |
CN1443315A (zh) | 2003-09-17 |
DE60129024D1 (de) | 2007-08-02 |
EP1311908A2 (de) | 2003-05-21 |
KR20030079908A (ko) | 2003-10-10 |
DE60129024T2 (de) | 2008-02-21 |
JP2004504635A (ja) | 2004-02-12 |
US6447980B1 (en) | 2002-09-10 |
WO2002006901A3 (en) | 2002-08-22 |
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