ATE365340T1 - Zur bilderzeugung mit tiefer uv-strahlung geeignete photoresistzusammensetzung und diese verwendendes bilderzeugungsverfahren - Google Patents

Zur bilderzeugung mit tiefer uv-strahlung geeignete photoresistzusammensetzung und diese verwendendes bilderzeugungsverfahren

Info

Publication number
ATE365340T1
ATE365340T1 AT01967154T AT01967154T ATE365340T1 AT E365340 T1 ATE365340 T1 AT E365340T1 AT 01967154 T AT01967154 T AT 01967154T AT 01967154 T AT01967154 T AT 01967154T AT E365340 T1 ATE365340 T1 AT E365340T1
Authority
AT
Austria
Prior art keywords
imaging
radiation
deep
same
photoresist composition
Prior art date
Application number
AT01967154T
Other languages
English (en)
Inventor
M Rahman
Munirathna Padmanaban
Ralph Dammel
Original Assignee
Az Electronic Materials Usa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Usa filed Critical Az Electronic Materials Usa
Application granted granted Critical
Publication of ATE365340T1 publication Critical patent/ATE365340T1/de

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/115Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polymerisation Methods In General (AREA)
AT01967154T 2000-07-19 2001-07-11 Zur bilderzeugung mit tiefer uv-strahlung geeignete photoresistzusammensetzung und diese verwendendes bilderzeugungsverfahren ATE365340T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/619,336 US6447980B1 (en) 2000-07-19 2000-07-19 Photoresist composition for deep UV and process thereof

Publications (1)

Publication Number Publication Date
ATE365340T1 true ATE365340T1 (de) 2007-07-15

Family

ID=24481461

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01967154T ATE365340T1 (de) 2000-07-19 2001-07-11 Zur bilderzeugung mit tiefer uv-strahlung geeignete photoresistzusammensetzung und diese verwendendes bilderzeugungsverfahren

Country Status (10)

Country Link
US (1) US6447980B1 (de)
EP (1) EP1311908B1 (de)
JP (1) JP2004504635A (de)
KR (1) KR100732929B1 (de)
CN (1) CN1230715C (de)
AT (1) ATE365340T1 (de)
DE (1) DE60129024T2 (de)
MY (1) MY124931A (de)
TW (1) TW591323B (de)
WO (1) WO2002006901A2 (de)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000001684A1 (fr) * 1998-07-03 2000-01-13 Nec Corporation Derives de (meth)acrylate porteurs d'une structure lactone, compositions polymeres et photoresists et procede de formation de modeles a l'aide de ceux-ci
US6517994B2 (en) * 2001-04-10 2003-02-11 Shin-Etsu Chemical Co., Ltd. Lactone ring-containing (meth)acrylate and polymer thereof for photoresist composition
US6610465B2 (en) * 2001-04-11 2003-08-26 Clariant Finance (Bvi) Limited Process for producing film forming resins for photoresist compositions
US20030215736A1 (en) * 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating
US7070914B2 (en) * 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US7109383B2 (en) 2002-09-27 2006-09-19 Central Glass Company, Limited Fluorine-containing allyl ether compounds, their copolymers, and resist compositions and anti-reflection film materials using such copolymers
DE10246546B4 (de) * 2002-09-30 2006-10-05 Infineon Technologies Ag Verwendung eines Resistsystems und Lithographieverfahren zur Herstellung von Halbleiterbauelementen
US7087356B2 (en) * 2002-09-30 2006-08-08 International Business Machines Corporation 193nm resist with improved post-exposure properties
JP4235466B2 (ja) * 2003-02-24 2009-03-11 Azエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物、パターン形成方法及びレジストパターンの検査方法
JP4012480B2 (ja) * 2003-03-28 2007-11-21 Azエレクトロニックマテリアルズ株式会社 微細パターン形成補助剤及びその製造法
US7037559B2 (en) * 2003-05-01 2006-05-02 International Business Machines Corporation Immersion plating and plated structures
US7189491B2 (en) * 2003-12-11 2007-03-13 Az Electronic Materials Usa Corp. Photoresist composition for deep UV and process thereof
US7033728B2 (en) * 2003-12-29 2006-04-25 Az Electronic Materials Usa Corp. Photoresist composition
US7473512B2 (en) * 2004-03-09 2009-01-06 Az Electronic Materials Usa Corp. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
KR100887202B1 (ko) * 2004-04-27 2009-03-06 도오꾜오까고오교 가부시끼가이샤 액침 노광 프로세스용 레지스트 보호막 형성용 재료, 및 이보호막을 이용한 레지스트 패턴 형성 방법
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
KR100599076B1 (ko) * 2004-05-31 2006-07-13 삼성전자주식회사 포토레지스트 조성물 및 이를 이용한 패턴 형성 방법
JP4368267B2 (ja) * 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
US20060054090A1 (en) * 2004-09-15 2006-03-16 Applied Materials, Inc. PECVD susceptor support construction
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US7595141B2 (en) * 2004-10-26 2009-09-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
US7537879B2 (en) 2004-11-22 2009-05-26 Az Electronic Materials Usa Corp. Photoresist composition for deep UV and process thereof
JP4498939B2 (ja) * 2005-02-01 2010-07-07 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP5002137B2 (ja) * 2005-07-28 2012-08-15 富士フイルム株式会社 化学増幅型レジスト組成物及びその製造方法
JP4699140B2 (ja) * 2005-08-29 2011-06-08 東京応化工業株式会社 パターン形成方法
US20070298349A1 (en) * 2006-06-22 2007-12-27 Ruzhi Zhang Antireflective Coating Compositions Comprising Siloxane Polymer
US7704670B2 (en) * 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
US7638262B2 (en) 2006-08-10 2009-12-29 Az Electronic Materials Usa Corp. Antireflective composition for photoresists
US7416834B2 (en) 2006-09-27 2008-08-26 Az Electronic Materials Usa Corp. Antireflective coating compositions
US7666575B2 (en) * 2006-10-18 2010-02-23 Az Electronic Materials Usa Corp Antireflective coating compositions
US20080171270A1 (en) * 2007-01-16 2008-07-17 Munirathna Padmanaban Polymers Useful in Photoresist Compositions and Compositions Thereof
US7824844B2 (en) * 2007-01-19 2010-11-02 Az Electronic Materials Usa Corp. Solvent mixtures for antireflective coating compositions for photoresists
US7736837B2 (en) * 2007-02-20 2010-06-15 Az Electronic Materials Usa Corp. Antireflective coating composition based on silicon polymer
US8026040B2 (en) 2007-02-20 2011-09-27 Az Electronic Materials Usa Corp. Silicone coating composition
KR101523393B1 (ko) 2007-02-27 2015-05-27 이엠디 퍼포먼스 머티리얼스 코프. 규소를 주성분으로 하는 반사 방지 코팅 조성물
US7923200B2 (en) * 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
JP5069494B2 (ja) * 2007-05-01 2012-11-07 AzエレクトロニックマテリアルズIp株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
US8017296B2 (en) * 2007-05-22 2011-09-13 Az Electronic Materials Usa Corp. Antireflective coating composition comprising fused aromatic rings
US20080317973A1 (en) * 2007-06-22 2008-12-25 White John M Diffuser support
US20090035704A1 (en) * 2007-08-03 2009-02-05 Hong Zhuang Underlayer Coating Composition Based on a Crosslinkable Polymer
US8252503B2 (en) * 2007-08-24 2012-08-28 Az Electronic Materials Usa Corp. Photoresist compositions
US8088548B2 (en) * 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
US8039201B2 (en) * 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US20090162800A1 (en) * 2007-12-20 2009-06-25 David Abdallah Process for Imaging a Photoresist Coated over an Antireflective Coating
TWI452419B (zh) * 2008-01-28 2014-09-11 Az Electronic Mat Ip Japan Kk 細微圖案光罩及其製造方法、及使用其之細微圖案形成方法
US8435721B2 (en) * 2008-02-21 2013-05-07 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition and forming method of resist pattern using the same
US7989144B2 (en) * 2008-04-01 2011-08-02 Az Electronic Materials Usa Corp Antireflective coating composition
US20090253081A1 (en) * 2008-04-02 2009-10-08 David Abdallah Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step
US20090253080A1 (en) * 2008-04-02 2009-10-08 Dammel Ralph R Photoresist Image-Forming Process Using Double Patterning
US8097082B2 (en) * 2008-04-28 2012-01-17 Applied Materials, Inc. Nonplanar faceplate for a plasma processing chamber
KR101039310B1 (ko) * 2008-05-02 2011-06-08 한국수자원공사 복합형 능동 전력 필터
US7745077B2 (en) * 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
US8221965B2 (en) * 2008-07-08 2012-07-17 Az Electronic Materials Usa Corp. Antireflective coating compositions
US20100015550A1 (en) * 2008-07-17 2010-01-21 Weihong Liu Dual damascene via filling composition
US20100040838A1 (en) * 2008-08-15 2010-02-18 Abdallah David J Hardmask Process for Forming a Reverse Tone Image
US8455176B2 (en) * 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
US20100119979A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US20100119980A1 (en) * 2008-11-13 2010-05-13 Rahman M Dalil Antireflective Coating Composition Comprising Fused Aromatic Rings
US8084186B2 (en) * 2009-02-10 2011-12-27 Az Electronic Materials Usa Corp. Hardmask process for forming a reverse tone image using polysilazane
US20100316949A1 (en) * 2009-06-10 2010-12-16 Rahman M Dalil Spin On Organic Antireflective Coating Composition Comprising Polymer with Fused Aromatic Rings
US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
US8551686B2 (en) 2009-10-30 2013-10-08 Az Electronic Materials Usa Corp. Antireflective composition for photoresists
US8486609B2 (en) 2009-12-23 2013-07-16 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US8445181B2 (en) 2010-06-03 2013-05-21 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US8852848B2 (en) 2010-07-28 2014-10-07 Z Electronic Materials USA Corp. Composition for coating over a photoresist pattern
US20120122029A1 (en) 2010-11-11 2012-05-17 Takanori Kudo Underlayer Developable Coating Compositions and Processes Thereof
US8465902B2 (en) 2011-02-08 2013-06-18 Az Electronic Materials Usa Corp. Underlayer coating composition and processes thereof
US8906590B2 (en) 2011-03-30 2014-12-09 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US8623589B2 (en) 2011-06-06 2014-01-07 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions and processes thereof
US8568958B2 (en) 2011-06-21 2013-10-29 Az Electronic Materials Usa Corp. Underlayer composition and process thereof
JP5889568B2 (ja) 2011-08-11 2016-03-22 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH 酸化タングステン膜形成用組成物およびそれを用いた酸化タングステン膜の製造法
US20130108956A1 (en) 2011-11-01 2013-05-02 Az Electronic Materials Usa Corp. Nanocomposite positive photosensitive composition and use thereof
KR101633657B1 (ko) * 2011-12-28 2016-06-28 금호석유화학 주식회사 레지스트용 첨가제 및 이를 포함하는 레지스트 조성물
US8906592B2 (en) 2012-08-01 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
US9315636B2 (en) 2012-12-07 2016-04-19 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds, their compositions and methods
KR101273667B1 (ko) * 2012-12-14 2013-06-17 주식회사 폴리사이언텍 유연성이 우수한 고내열투명성 환상올레핀 공중합체 및 이로부터 제조된 플렉시블 기판
US9291909B2 (en) 2013-05-17 2016-03-22 Az Electronic Materials (Luxembourg) S.A.R.L. Composition comprising a polymeric thermal acid generator and processes thereof
US9152051B2 (en) 2013-06-13 2015-10-06 Az Electronics Materials (Luxembourg) S.A.R.L. Antireflective coating composition and process thereof
US9201305B2 (en) 2013-06-28 2015-12-01 Az Electronic Materials (Luxembourg) S.A.R.L. Spin-on compositions of soluble metal oxide carboxylates and methods of their use
US9296922B2 (en) 2013-08-30 2016-03-29 Az Electronic Materials (Luxembourg) S.A.R.L. Stable metal compounds as hardmasks and filling materials, their compositions and methods of use
US9418836B2 (en) 2014-01-14 2016-08-16 Az Electronic Materials (Luxembourg) S.A.R.L. Polyoxometalate and heteropolyoxometalate compositions and methods for their use
US9409793B2 (en) 2014-01-14 2016-08-09 Az Electronic Materials (Luxembourg) S.A.R.L. Spin coatable metallic hard mask compositions and processes thereof
US9274426B2 (en) 2014-04-29 2016-03-01 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective coating compositions and processes thereof
KR102537349B1 (ko) 2015-02-02 2023-05-26 바스프 에스이 잠재성 산 및 그의 용도
US9499698B2 (en) 2015-02-11 2016-11-22 Az Electronic Materials (Luxembourg)S.A.R.L. Metal hardmask composition and processes for forming fine patterns on semiconductor substrates
US10241409B2 (en) 2015-12-22 2019-03-26 AZ Electronic Materials (Luxembourg) S.à.r.l. Materials containing metal oxides, processes for making same, and processes for using same
TWI786656B (zh) 2016-12-21 2022-12-11 德商馬克專利公司 在矽基板上塗佈硬遮罩組合物之方法
WO2019048393A1 (en) 2017-09-06 2019-03-14 AZ Electronic Materials (Luxembourg) S.à.r.l. AN INORGANIC OXIDE-CONTAINING VINYL DEPOSITION COMPOSITION USEFUL AS HARD MASKS AND FILLING MATERIALS HAVING ENHANCED THERMAL STABILITY
EP4334252A2 (de) 2021-05-06 2024-03-13 Merck Patent GmbH Spin-on metallorganische formulierungen
CN114085311B (zh) * 2021-12-30 2023-03-14 宁波南大光电材料有限公司 一种制备高纯光刻胶树脂的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
EP0440374B1 (de) 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemisch verstärktes Photolack-Material
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
KR100265597B1 (ko) 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
TW457277B (en) * 1998-05-11 2001-10-01 Shinetsu Chemical Co Ester compounds, polymers, resist composition and patterning process
KR100301065B1 (ko) * 1999-08-16 2001-09-22 윤종용 백본이 환상 구조를 가지는 감광성 폴리머와 이를 포함하는 레지스트 조성물
ATE315245T1 (de) 1999-09-17 2006-02-15 Jsr Corp Strahlungsempfindliche harzzusammensetzung
JP4123654B2 (ja) * 1999-10-13 2008-07-23 Jsr株式会社 感放射線性樹脂組成物
JP2001215703A (ja) 2000-02-01 2001-08-10 Daicel Chem Ind Ltd フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物

Also Published As

Publication number Publication date
CN1230715C (zh) 2005-12-07
TW591323B (en) 2004-06-11
MY124931A (en) 2006-07-31
EP1311908B1 (de) 2007-06-20
WO2002006901A2 (en) 2002-01-24
KR100732929B1 (ko) 2007-06-29
CN1443315A (zh) 2003-09-17
DE60129024D1 (de) 2007-08-02
EP1311908A2 (de) 2003-05-21
KR20030079908A (ko) 2003-10-10
DE60129024T2 (de) 2008-02-21
JP2004504635A (ja) 2004-02-12
US6447980B1 (en) 2002-09-10
WO2002006901A3 (en) 2002-08-22

Similar Documents

Publication Publication Date Title
ATE365340T1 (de) Zur bilderzeugung mit tiefer uv-strahlung geeignete photoresistzusammensetzung und diese verwendendes bilderzeugungsverfahren
TW200632554A (en) Photoresist composition for deep UV and process thereof
MY130283A (en) Photoresist composition for deep uv radiation containing an additive
DE69610751T2 (de) Elektronenemittierende Vorrichtung, Elektronenquelle und damit versehenes Bilderzeugungsgerät sowie Verfahren zu deren Herstellung
DE60035442D1 (de) Optische Sortiermethode
DE69222963T2 (de) Abbildungsverfahren zur Herstellung von Mikrovorrichtungen
MX9304736A (es) Sistema y metodo para remover hidrocarburos a partir de mezclas gaseosas.
CY1108931T1 (el) Μεθοδος παρασκευης παραγωγων βενζιμιδαζολ-2-υλο-κινολινονης
ATE514944T1 (de) Verfahren zum nachweis von oxidierenden substanzen
DE59301431D1 (de) Verfahren zur biologischen Aufbereitung organischer Substanzen, insbesondere zur anaeroben biologischen Hydrolyse zur anschliessenden Biomethanisierung, und Vorrichtungen zur Durchführung des Verfahrens
DE69025831T2 (de) Elektronemittierende Vorrichtung; Herstellungsverfahren Elektronemittierende Vorrichtung, Herstellungsverfahren derselben und Anzeigegerät und Elektronstrahl- Schreibvorrichtung, welche diese Vorrichtung verwendet.
EP1148717A3 (de) Verfahren und Vorrichtung zum Photographieren von fluoreszierenden und reflektierten Lichtbildern
DE60007316D1 (de) Verfahren zur mikroverkapselung von wasserlöslichen substanzen
FR2826961B1 (fr) Procede de preparation d'anhydride (meth) acrylique
DE69327890D1 (de) Verfahren zur Herstellung von 2-(un)substituierten 4-Alkylimidazolen
ATE159233T1 (de) Verfahren zur reinigung von für den menschlichen verbrauch bestimmtem wasser
BR0011815B1 (pt) processo para a purificação de poloxámeros que contêm impurezas de aldeìdo.
HUP0303599A2 (hu) Fotoaktivált előillatanyagok, eljárás adott helyre való továbbításukra és illatharmonikus továbbító rendszer
DE60112171D1 (de) Verfahren zur Behandlung eines eine SO3-Komponente enthaltenden Gases mit Na2CO3
NO20014885L (no) Fremgangsmåte til fremstilling av en amidforbindelse
GB1491408A (en) Racemization of optically active 2,2-dimethyl-3(2,2-dichlorovinyl)cyclo-propanecarboxylic acid and functional derivatives thereof
DE502004006903D1 (de) Verfahren und vorrichtung zur herstellung von korpuskularstrahlsystemen
PT793666E (pt) Processo de sililacao
NO174669C (no) Analogifremgangsmåte for fremstilling av terapeutisk aktive benzotiopyranylaminer
ATE248862T1 (de) Verfahren zur herstellung von polyguluronsäuren

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties