DE60127157D1 - Analoges funktionsmodul unter verwendung magnetoresistiver speichertechnologie - Google Patents

Analoges funktionsmodul unter verwendung magnetoresistiver speichertechnologie

Info

Publication number
DE60127157D1
DE60127157D1 DE60127157T DE60127157T DE60127157D1 DE 60127157 D1 DE60127157 D1 DE 60127157D1 DE 60127157 T DE60127157 T DE 60127157T DE 60127157 T DE60127157 T DE 60127157T DE 60127157 D1 DE60127157 D1 DE 60127157D1
Authority
DE
Germany
Prior art keywords
magnetoresistic
function module
storage technology
analog function
analog
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60127157T
Other languages
English (en)
Other versions
DE60127157T2 (de
Inventor
John P Hansen
Eric J Salter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of DE60127157D1 publication Critical patent/DE60127157D1/de
Application granted granted Critical
Publication of DE60127157T2 publication Critical patent/DE60127157T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/022—Sample-and-hold arrangements using a magnetic memory element

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Power Sources (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE60127157T 2000-09-29 2001-09-13 Analoges funktionsmodul unter verwendung magnetoresistiver speichertechnologie Expired - Fee Related DE60127157T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US675202 2000-09-29
US09/675,202 US6314020B1 (en) 2000-09-29 2000-09-29 Analog functional module using magnetoresistive memory technology
PCT/US2001/028988 WO2002029819A2 (en) 2000-09-29 2001-09-13 An analog functional module using magnetoresistive memory technology

Publications (2)

Publication Number Publication Date
DE60127157D1 true DE60127157D1 (de) 2007-04-19
DE60127157T2 DE60127157T2 (de) 2007-06-28

Family

ID=24709464

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60127157T Expired - Fee Related DE60127157T2 (de) 2000-09-29 2001-09-13 Analoges funktionsmodul unter verwendung magnetoresistiver speichertechnologie

Country Status (8)

Country Link
US (1) US6314020B1 (de)
EP (1) EP1332498B1 (de)
JP (1) JP2004526269A (de)
KR (1) KR100823049B1 (de)
CN (1) CN1249727C (de)
AU (1) AU2001289117A1 (de)
DE (1) DE60127157T2 (de)
WO (1) WO2002029819A2 (de)

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JP4477199B2 (ja) * 2000-06-16 2010-06-09 株式会社ルネサステクノロジ 磁気ランダムアクセスメモリ、磁気ランダムアクセスメモリへのアクセス方法および磁気ランダムアクセスメモリの製造方法
US6476753B1 (en) * 2000-09-29 2002-11-05 Motorola, Inc. Analog to digital converter using magnetoresistive memory technology
KR100446616B1 (ko) * 2001-10-18 2004-09-04 삼성전자주식회사 단일 트랜지스터형 자기 랜덤 액세스 메모리 소자와 그구동 및 제조방법
US6944048B2 (en) * 2001-11-29 2005-09-13 Kabushiki Kaisha Toshiba Magnetic random access memory
US6743641B2 (en) * 2001-12-20 2004-06-01 Micron Technology, Inc. Method of improving surface planarity prior to MRAM bit material deposition
US6677877B2 (en) * 2002-03-29 2004-01-13 The United States Of America As Represented By The Secretary Of The Navy Comparator, analog-to-digital converter and method of analog-to-digital conversion using non-linear magneto-electronic device
JP2004023062A (ja) * 2002-06-20 2004-01-22 Nec Electronics Corp 半導体装置とその製造方法
US7095646B2 (en) * 2002-07-17 2006-08-22 Freescale Semiconductor, Inc. Multi-state magnetoresistance random access cell with improved memory storage density
JP2004086952A (ja) * 2002-08-23 2004-03-18 Renesas Technology Corp 薄膜磁性体記憶装置
US7006318B2 (en) 2002-08-29 2006-02-28 Freescale Semiconductor, Inc. Removable media storage system with memory for storing operational data
US7096378B2 (en) 2002-08-29 2006-08-22 Freescale Semiconductor, Inc. Data storage system having a non-volatile IC based memory for storing user data
US6646948B1 (en) 2002-08-29 2003-11-11 Motorola, Inc. Data storage system utilizing a non-volatile IC based memory for reduction of data retrieval time
JP2004288311A (ja) * 2003-03-24 2004-10-14 Toshiba Corp 半導体記憶装置及びその制御方法
JP3908685B2 (ja) * 2003-04-04 2007-04-25 株式会社東芝 磁気ランダムアクセスメモリおよびその書き込み方法
KR100683044B1 (ko) * 2006-04-17 2007-02-15 주식회사 한국 종합엔지니어링 상수도용 높이 조절기능을 가진 연장 구동축을 갖는 밸브보호통
KR100843209B1 (ko) * 2006-11-02 2008-07-02 삼성전자주식회사 버퍼 메모리를 포함하는 저항형 메모리 장치, 저항형메모리 장치를 포함하는 메모리 시스템, 및 저항형 메모리장치의 데이터 기입/독출 방법
KR101334184B1 (ko) * 2007-11-08 2013-11-28 삼성전자주식회사 필드 프로그래머블 반도체 메모리장치 및 그프로그래밍방법
US8203872B2 (en) * 2008-02-26 2012-06-19 Ovonyx, Inc. Method and apparatus for accessing a multi-mode programmable resistance memory
US7764213B2 (en) * 2008-07-01 2010-07-27 Microchip Technology Incorporated Current-time digital-to-analog converter
US8644055B2 (en) 2010-12-09 2014-02-04 Infineon Technologies Ag Nonvolatile memory with enhanced efficiency to address asymetric NVM cells
US8525709B2 (en) 2011-09-21 2013-09-03 Qualcomm Incorporated Systems and methods for designing ADC based on probabilistic switching of memories
JP6131591B2 (ja) * 2012-12-17 2017-05-24 凸版印刷株式会社 Ｄ／ａ変換回路
JP6146004B2 (ja) * 2012-12-17 2017-06-14 凸版印刷株式会社 Ｄ／ａ変換回路
TWI548203B (zh) * 2014-01-08 2016-09-01 新唐科技股份有限公司 電壓產生器以及振盪裝置與操作方法
KR20150144550A (ko) 2014-06-17 2015-12-28 삼성전자주식회사 온-칩 저항 측정 회로 및 이를 포함하는 저항성 메모리 장치
KR102573757B1 (ko) 2018-09-17 2023-09-05 삼성전자주식회사 자기 메모리 소자 및 그 제조 방법, 그리고 기판 처리 설비
US11222695B2 (en) * 2019-11-15 2022-01-11 Micron Technology, Inc. Socket design for a memory device
WO2023021576A1 (ja) * 2021-08-17 2023-02-23 日本電信電話株式会社 ディジタル・アナログ変換回路
CN116227402B (zh) * 2023-05-09 2023-11-28 北京芯愿景软件技术股份有限公司 模拟电路的建模方法、装置及电子设备

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US4027146A (en) * 1976-03-23 1977-05-31 Heath Company High speed accurate low frequency counter
US4286173A (en) * 1978-03-27 1981-08-25 Hitachi, Ltd. Logical circuit having bypass circuit
EP0147968A3 (de) * 1983-12-23 1986-09-17 General Motors Corporation Temperaturkompensierter magnetischer Blasenspeicher
EP0371166A1 (de) * 1988-11-30 1990-06-06 International Business Machines Corporation Speichermodule, um eine Plattenspeichervorrichtung zu simulieren
US5565695A (en) * 1995-04-21 1996-10-15 Johnson; Mark B. Magnetic spin transistor hybrid circuit element
US5654566A (en) * 1995-04-21 1997-08-05 Johnson; Mark B. Magnetic spin injected field effect transistor and method of operation
US5629549A (en) * 1995-04-21 1997-05-13 Johnson; Mark B. Magnetic spin transistor device, logic gate & method of operation
US5652445A (en) * 1995-04-21 1997-07-29 Johnson; Mark B. Hybrid hall effect device and method of operation
JP2000020634A (ja) * 1998-06-26 2000-01-21 Canon Inc デジタル・アナログ・多値データ処理装置および半導体装置
US6172903B1 (en) * 1998-09-22 2001-01-09 Canon Kabushiki Kaisha Hybrid device, memory apparatus using such hybrid devices and information reading method
DE19922129C1 (de) * 1999-05-12 2000-09-28 Siemens Ag Verfahren und Vorrichtung zur logischen Verknüpfung von Signalen auf magnetischer Basis
US6097626A (en) * 1999-07-28 2000-08-01 Hewlett-Packard Company MRAM device using magnetic field bias to suppress inadvertent switching of half-selected memory cells

Also Published As

Publication number Publication date
CN1470060A (zh) 2004-01-21
JP2004526269A (ja) 2004-08-26
KR100823049B1 (ko) 2008-04-18
EP1332498A2 (de) 2003-08-06
CN1249727C (zh) 2006-04-05
US6314020B1 (en) 2001-11-06
KR20030059164A (ko) 2003-07-07
WO2002029819A2 (en) 2002-04-11
AU2001289117A1 (en) 2002-04-15
EP1332498B1 (de) 2007-03-07
DE60127157T2 (de) 2007-06-28
WO2002029819A3 (en) 2003-01-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee