DE60126576D1 - Elektrostatische Haltevorrichtung und Methode zur Herstellung derselben - Google Patents

Elektrostatische Haltevorrichtung und Methode zur Herstellung derselben

Info

Publication number
DE60126576D1
DE60126576D1 DE60126576T DE60126576T DE60126576D1 DE 60126576 D1 DE60126576 D1 DE 60126576D1 DE 60126576 T DE60126576 T DE 60126576T DE 60126576 T DE60126576 T DE 60126576T DE 60126576 D1 DE60126576 D1 DE 60126576D1
Authority
DE
Germany
Prior art keywords
coating layer
intensity
sup
ionized
hydrocarbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60126576T
Other languages
English (en)
Other versions
DE60126576T2 (de
Inventor
Shinsuke Masuda
Kiyotoshi Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GE Specialty Materials Japan Co Ltd
Original Assignee
GE Specialty Materials Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001134122A external-priority patent/JP3602067B2/ja
Priority claimed from JP2001134121A external-priority patent/JP2002246454A/ja
Application filed by GE Specialty Materials Japan Co Ltd filed Critical GE Specialty Materials Japan Co Ltd
Application granted granted Critical
Publication of DE60126576D1 publication Critical patent/DE60126576D1/de
Publication of DE60126576T2 publication Critical patent/DE60126576T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
DE60126576T 2000-12-11 2001-12-11 Elektrostatische Spannvorrichtung und Verfahren zur Herstellung derselben Expired - Lifetime DE60126576T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2000376599 2000-12-11
JP2000376599 2000-12-11
JP2001134122A JP3602067B2 (ja) 2000-12-11 2001-05-01 静電チャック
JP2001134121 2001-05-01
JP2001134122 2001-05-01
JP2001134121A JP2002246454A (ja) 2000-12-11 2001-05-01 静電チャック

Publications (2)

Publication Number Publication Date
DE60126576D1 true DE60126576D1 (de) 2007-03-29
DE60126576T2 DE60126576T2 (de) 2007-11-22

Family

ID=27345410

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60126576T Expired - Lifetime DE60126576T2 (de) 2000-12-11 2001-12-11 Elektrostatische Spannvorrichtung und Verfahren zur Herstellung derselben

Country Status (6)

Country Link
US (1) US6678143B2 (de)
EP (1) EP1220311B1 (de)
KR (1) KR20020046214A (de)
AT (1) ATE354177T1 (de)
DE (1) DE60126576T2 (de)
TW (1) TW516155B (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
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JP3963788B2 (ja) * 2002-06-20 2007-08-22 信越化学工業株式会社 静電吸着機能を有する加熱装置
US20040018749A1 (en) * 2002-07-08 2004-01-29 Dorfman Benjamin F. Method of decreasing brittleness of single crystals, semiconductor wafers, and solid-state devices
DE10232080B4 (de) * 2002-07-15 2015-10-01 Integrated Dynamics Engineering Gmbh Elektrostatischer Greifer und Verfahren zu dessen Herstellung
JP4082985B2 (ja) * 2002-11-01 2008-04-30 信越化学工業株式会社 静電吸着機能を有する加熱装置及びその製造方法
KR20050088159A (ko) * 2003-01-17 2005-09-01 제너럴 일렉트릭 캄파니 웨이퍼 처리 장치
JP4302428B2 (ja) * 2003-05-09 2009-07-29 信越化学工業株式会社 静電吸着機能を有するウエーハ加熱装置
JP4309714B2 (ja) * 2003-08-27 2009-08-05 信越化学工業株式会社 静電吸着機能を有する加熱装置
JP4684222B2 (ja) * 2004-03-19 2011-05-18 株式会社クリエイティブ テクノロジー 双極型静電チャック
US20060096946A1 (en) * 2004-11-10 2006-05-11 General Electric Company Encapsulated wafer processing device and process for making thereof
KR100652244B1 (ko) * 2005-07-28 2006-12-01 (주)이오엠 나선형 전극을 갖는 정전척 및 그 제조 방법
DE102005056364B3 (de) 2005-11-25 2007-08-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bipolarer Trägerwafer und mobile, bipolare, elektrostatische Waferanordnung
JP4654153B2 (ja) * 2006-04-13 2011-03-16 信越化学工業株式会社 加熱素子
US20090142599A1 (en) * 2006-06-02 2009-06-04 Nv Bekaert Sa Method to prevent metal contamination by a substrate holder
KR100801467B1 (ko) * 2006-06-09 2008-02-11 유효재 쌍극형 정전척
US7983017B2 (en) 2006-12-26 2011-07-19 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method of forming
US20080151466A1 (en) * 2006-12-26 2008-06-26 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method of forming
TWI475594B (zh) 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
US7929269B2 (en) 2008-09-04 2011-04-19 Momentive Performance Materials Inc. Wafer processing apparatus having a tunable electrical resistivity
CN102449754B (zh) 2009-05-15 2015-10-21 恩特格林斯公司 具有聚合物突出物的静电吸盘
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
KR100997374B1 (ko) * 2009-08-21 2010-11-30 주식회사 코미코 정전척 및 이의 제조 방법
KR101016612B1 (ko) * 2009-10-07 2011-02-22 주식회사 템네스트 정전척
US9025305B2 (en) 2010-05-28 2015-05-05 Entegris, Inc. High surface resistivity electrostatic chuck
KR101122709B1 (ko) * 2010-11-08 2012-03-23 주식회사 코미코 정전척
US20120154974A1 (en) * 2010-12-16 2012-06-21 Applied Materials, Inc. High efficiency electrostatic chuck assembly for semiconductor wafer processing
CN102808160B (zh) * 2011-06-02 2014-07-02 深圳富泰宏精密工业有限公司 壳体及其制备方法
EP2875404B1 (de) * 2012-07-17 2019-08-07 ASML Netherlands B.V. Elektrostatische klemme, lithografievorrichtung und -verfahren
US9281227B2 (en) * 2013-06-28 2016-03-08 Axcelis Technologies, Inc. Multi-resistivity Johnsen-Rahbek electrostatic clamp
WO2015013142A1 (en) 2013-07-22 2015-01-29 Applied Materials, Inc. An electrostatic chuck for high temperature process applications
JP6518666B2 (ja) 2013-08-05 2019-05-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 薄い基板をハンドリングするための静電キャリア
JP6423880B2 (ja) 2013-08-05 2018-11-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ インシトゥで取り出すことができる静電チャック
CN105408993A (zh) 2013-08-06 2016-03-16 应用材料公司 局部加热的多区域基板支撑件
CN106164331B (zh) 2013-09-20 2018-11-23 应用材料公司 具有一体式静电夹盘的基板载体
US9460950B2 (en) 2013-12-06 2016-10-04 Applied Materials, Inc. Wafer carrier for smaller wafers and wafer pieces
US9101038B2 (en) 2013-12-20 2015-08-04 Lam Research Corporation Electrostatic chuck including declamping electrode and method of declamping
JP2017515301A (ja) 2014-05-09 2017-06-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 保護カバーを有する基板キャリアシステム
US10153191B2 (en) 2014-05-09 2018-12-11 Applied Materials, Inc. Substrate carrier system and method for using the same
US9959961B2 (en) 2014-06-02 2018-05-01 Applied Materials, Inc. Permanent magnetic chuck for OLED mask chucking
WO2016056275A1 (ja) 2014-10-10 2016-04-14 キヤノンアネルバ株式会社 成膜装置
US10002782B2 (en) 2014-10-17 2018-06-19 Lam Research Corporation ESC assembly including an electrically conductive gasket for uniform RF power delivery therethrough
CN107636820B (zh) 2015-06-04 2022-01-07 应用材料公司 透明静电载具
CN109562985A (zh) * 2016-08-10 2019-04-02 康宁股份有限公司 利用静电卡盘和范德华力涂覆玻璃基材的设备和方法
US20200013590A1 (en) * 2018-07-06 2020-01-09 Tokyo Electron Limited Protective layer for chucks during plasma processing to reduce particle formation

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2665242B2 (ja) * 1988-09-19 1997-10-22 東陶機器株式会社 静電チャック
US5668524A (en) * 1994-02-09 1997-09-16 Kyocera Corporation Ceramic resistor and electrostatic chuck having an aluminum nitride crystal phase
US5646814A (en) * 1994-07-15 1997-07-08 Applied Materials, Inc. Multi-electrode electrostatic chuck
JPH08227933A (ja) * 1995-02-20 1996-09-03 Shin Etsu Chem Co Ltd 静電吸着機能を有するウエハ加熱装置
US5886863A (en) * 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
TW303505B (en) * 1996-05-08 1997-04-21 Applied Materials Inc Substrate support chuck having a contaminant containment layer and method of fabricating same
US5748436A (en) * 1996-10-02 1998-05-05 Advanced Ceramics Corporation Ceramic electrostatic chuck and method
US5969934A (en) * 1998-04-10 1999-10-19 Varian Semiconductor Equipment Associats, Inc. Electrostatic wafer clamp having low particulate contamination of wafers
TW432453B (en) * 1998-11-12 2001-05-01 Applied Materials Inc Apparatus for protecting a substrate support surface and method of fabricating same

Also Published As

Publication number Publication date
EP1220311A3 (de) 2004-02-04
DE60126576T2 (de) 2007-11-22
EP1220311A2 (de) 2002-07-03
ATE354177T1 (de) 2007-03-15
EP1220311B1 (de) 2007-02-14
US20020109955A1 (en) 2002-08-15
TW516155B (en) 2003-01-01
KR20020046214A (ko) 2002-06-20
US6678143B2 (en) 2004-01-13

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