ATE354177T1 - Elektrostatische haltevorrichtung und methode zur herstellung derselben - Google Patents

Elektrostatische haltevorrichtung und methode zur herstellung derselben

Info

Publication number
ATE354177T1
ATE354177T1 AT01310328T AT01310328T ATE354177T1 AT E354177 T1 ATE354177 T1 AT E354177T1 AT 01310328 T AT01310328 T AT 01310328T AT 01310328 T AT01310328 T AT 01310328T AT E354177 T1 ATE354177 T1 AT E354177T1
Authority
AT
Austria
Prior art keywords
coating layer
intensity
sup
ionized
hydrocarbon
Prior art date
Application number
AT01310328T
Other languages
English (en)
Inventor
Shinsuke Masuda
Kiyotoshi Fujii
Original Assignee
Ge Specialty Materials Japan C
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001134122A external-priority patent/JP3602067B2/ja
Priority claimed from JP2001134121A external-priority patent/JP2002246454A/ja
Application filed by Ge Specialty Materials Japan C filed Critical Ge Specialty Materials Japan C
Application granted granted Critical
Publication of ATE354177T1 publication Critical patent/ATE354177T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
AT01310328T 2000-12-11 2001-12-11 Elektrostatische haltevorrichtung und methode zur herstellung derselben ATE354177T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000376599 2000-12-11
JP2001134122A JP3602067B2 (ja) 2000-12-11 2001-05-01 静電チャック
JP2001134121A JP2002246454A (ja) 2000-12-11 2001-05-01 静電チャック

Publications (1)

Publication Number Publication Date
ATE354177T1 true ATE354177T1 (de) 2007-03-15

Family

ID=27345410

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01310328T ATE354177T1 (de) 2000-12-11 2001-12-11 Elektrostatische haltevorrichtung und methode zur herstellung derselben

Country Status (6)

Country Link
US (1) US6678143B2 (de)
EP (1) EP1220311B1 (de)
KR (1) KR20020046214A (de)
AT (1) ATE354177T1 (de)
DE (1) DE60126576T2 (de)
TW (1) TW516155B (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
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JP3963788B2 (ja) * 2002-06-20 2007-08-22 信越化学工業株式会社 静電吸着機能を有する加熱装置
US20040018749A1 (en) * 2002-07-08 2004-01-29 Dorfman Benjamin F. Method of decreasing brittleness of single crystals, semiconductor wafers, and solid-state devices
DE10232080B4 (de) * 2002-07-15 2015-10-01 Integrated Dynamics Engineering Gmbh Elektrostatischer Greifer und Verfahren zu dessen Herstellung
JP4082985B2 (ja) * 2002-11-01 2008-04-30 信越化学工業株式会社 静電吸着機能を有する加熱装置及びその製造方法
EP1588404A2 (de) * 2003-01-17 2005-10-26 General Electric Company Waferhandhabungsvorrichtung
JP4302428B2 (ja) * 2003-05-09 2009-07-29 信越化学工業株式会社 静電吸着機能を有するウエーハ加熱装置
JP4309714B2 (ja) * 2003-08-27 2009-08-05 信越化学工業株式会社 静電吸着機能を有する加熱装置
US20070223173A1 (en) * 2004-03-19 2007-09-27 Hiroshi Fujisawa Bipolar Electrostatic Chuck
US20060096946A1 (en) * 2004-11-10 2006-05-11 General Electric Company Encapsulated wafer processing device and process for making thereof
KR100652244B1 (ko) * 2005-07-28 2006-12-01 (주)이오엠 나선형 전극을 갖는 정전척 및 그 제조 방법
DE102005056364B3 (de) 2005-11-25 2007-08-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bipolarer Trägerwafer und mobile, bipolare, elektrostatische Waferanordnung
JP4654153B2 (ja) * 2006-04-13 2011-03-16 信越化学工業株式会社 加熱素子
CN101467243B (zh) * 2006-06-02 2012-08-08 萨尔泽曼塔普拉斯有限公司 防止衬底支座引起的金属污染的方法
KR100801467B1 (ko) * 2006-06-09 2008-02-11 유효재 쌍극형 정전척
US7983017B2 (en) 2006-12-26 2011-07-19 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method of forming
US20080151466A1 (en) * 2006-12-26 2008-06-26 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method of forming
TWI475594B (zh) 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
US7929269B2 (en) 2008-09-04 2011-04-19 Momentive Performance Materials Inc. Wafer processing apparatus having a tunable electrical resistivity
KR101680787B1 (ko) 2009-05-15 2016-11-29 엔테그리스, 아이엔씨. 중합체 돌기들을 가지는 정전 척
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
KR100997374B1 (ko) * 2009-08-21 2010-11-30 주식회사 코미코 정전척 및 이의 제조 방법
KR101016612B1 (ko) * 2009-10-07 2011-02-22 주식회사 템네스트 정전척
KR101731136B1 (ko) 2010-05-28 2017-04-27 엔테그리스, 아이엔씨. 표면저항이 높은 정전 척
KR101122709B1 (ko) * 2010-11-08 2012-03-23 주식회사 코미코 정전척
US20120154974A1 (en) * 2010-12-16 2012-06-21 Applied Materials, Inc. High efficiency electrostatic chuck assembly for semiconductor wafer processing
CN102808160B (zh) * 2011-06-02 2014-07-02 深圳富泰宏精密工业有限公司 壳体及其制备方法
WO2014012749A1 (en) * 2012-07-17 2014-01-23 Asml Netherlands B.V. Electrostatic clamp, lithographic apparatus and method
US9281227B2 (en) * 2013-06-28 2016-03-08 Axcelis Technologies, Inc. Multi-resistivity Johnsen-Rahbek electrostatic clamp
WO2015013142A1 (en) 2013-07-22 2015-01-29 Applied Materials, Inc. An electrostatic chuck for high temperature process applications
KR101812666B1 (ko) 2013-08-05 2017-12-27 어플라이드 머티어리얼스, 인코포레이티드 얇은 기판 취급을 위한 정전 캐리어
JP6423880B2 (ja) 2013-08-05 2018-11-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ インシトゥで取り出すことができる静電チャック
CN105408993A (zh) 2013-08-06 2016-03-16 应用材料公司 局部加热的多区域基板支撑件
WO2015042302A1 (en) 2013-09-20 2015-03-26 Applied Materials, Inc. Substrate carrier with integrated electrostatic chuck
US9460950B2 (en) 2013-12-06 2016-10-04 Applied Materials, Inc. Wafer carrier for smaller wafers and wafer pieces
US9101038B2 (en) 2013-12-20 2015-08-04 Lam Research Corporation Electrostatic chuck including declamping electrode and method of declamping
JP2017515301A (ja) 2014-05-09 2017-06-08 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 保護カバーを有する基板キャリアシステム
KR20170002607A (ko) 2014-05-09 2017-01-06 어플라이드 머티어리얼스, 인코포레이티드 기판 캐리어 시스템 및 이를 사용하기 위한 방법
US9959961B2 (en) 2014-06-02 2018-05-01 Applied Materials, Inc. Permanent magnetic chuck for OLED mask chucking
CN106795626B (zh) * 2014-10-10 2019-05-28 佳能安内华股份有限公司 成膜装置
US10002782B2 (en) 2014-10-17 2018-06-19 Lam Research Corporation ESC assembly including an electrically conductive gasket for uniform RF power delivery therethrough
JP2018518055A (ja) 2015-06-04 2018-07-05 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 透明な静電キャリア
US10138546B2 (en) * 2016-08-10 2018-11-27 Corning Incorporated Apparatus and method to coat glass substrates with electrostatic chuck and van der waals forces
US20200013590A1 (en) * 2018-07-06 2020-01-09 Tokyo Electron Limited Protective layer for chucks during plasma processing to reduce particle formation

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2665242B2 (ja) * 1988-09-19 1997-10-22 東陶機器株式会社 静電チャック
US5668524A (en) * 1994-02-09 1997-09-16 Kyocera Corporation Ceramic resistor and electrostatic chuck having an aluminum nitride crystal phase
US5646814A (en) * 1994-07-15 1997-07-08 Applied Materials, Inc. Multi-electrode electrostatic chuck
JPH08227933A (ja) * 1995-02-20 1996-09-03 Shin Etsu Chem Co Ltd 静電吸着機能を有するウエハ加熱装置
US5886863A (en) * 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
TW303505B (en) * 1996-05-08 1997-04-21 Applied Materials Inc Substrate support chuck having a contaminant containment layer and method of fabricating same
US5748436A (en) * 1996-10-02 1998-05-05 Advanced Ceramics Corporation Ceramic electrostatic chuck and method
US5969934A (en) * 1998-04-10 1999-10-19 Varian Semiconductor Equipment Associats, Inc. Electrostatic wafer clamp having low particulate contamination of wafers
TW432453B (en) * 1998-11-12 2001-05-01 Applied Materials Inc Apparatus for protecting a substrate support surface and method of fabricating same

Also Published As

Publication number Publication date
EP1220311A2 (de) 2002-07-03
US20020109955A1 (en) 2002-08-15
DE60126576D1 (de) 2007-03-29
EP1220311A3 (de) 2004-02-04
KR20020046214A (ko) 2002-06-20
TW516155B (en) 2003-01-01
EP1220311B1 (de) 2007-02-14
US6678143B2 (en) 2004-01-13
DE60126576T2 (de) 2007-11-22

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