DE60124487T2 - Verfahren zur Reinigung nach einer Ätzung - Google Patents

Verfahren zur Reinigung nach einer Ätzung Download PDF

Info

Publication number
DE60124487T2
DE60124487T2 DE60124487T DE60124487T DE60124487T2 DE 60124487 T2 DE60124487 T2 DE 60124487T2 DE 60124487 T DE60124487 T DE 60124487T DE 60124487 T DE60124487 T DE 60124487T DE 60124487 T2 DE60124487 T2 DE 60124487T2
Authority
DE
Germany
Prior art keywords
etchant
hcl
etching
pzt
etch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60124487T
Other languages
German (de)
English (en)
Other versions
DE60124487D1 (de
Inventor
Laura Palo Alto Wills Mirkarimi
Stephen R. Palo Alto Gilbert
Guoqiang Texas Xing
Scott Cupertino Summerfelt
Tomoyuki San Jose Sakoda
Ted Los Altos Moise
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Avago Technologies General IP Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avago Technologies General IP Singapore Pte Ltd filed Critical Avago Technologies General IP Singapore Pte Ltd
Application granted granted Critical
Publication of DE60124487D1 publication Critical patent/DE60124487D1/de
Publication of DE60124487T2 publication Critical patent/DE60124487T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Semiconductor Memories (AREA)
  • Detergent Compositions (AREA)
DE60124487T 2000-08-31 2001-08-07 Verfahren zur Reinigung nach einer Ätzung Expired - Lifetime DE60124487T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/650,224 US6692976B1 (en) 2000-08-31 2000-08-31 Post-etch cleaning treatment
US650224 2000-08-31

Publications (2)

Publication Number Publication Date
DE60124487D1 DE60124487D1 (de) 2006-12-28
DE60124487T2 true DE60124487T2 (de) 2007-03-01

Family

ID=24608004

Family Applications (3)

Application Number Title Priority Date Filing Date
DE60124487T Expired - Lifetime DE60124487T2 (de) 2000-08-31 2001-08-07 Verfahren zur Reinigung nach einer Ätzung
DE60143229T Expired - Lifetime DE60143229D1 (de) 2000-08-31 2001-08-07 Verfahren zur Reinigung nach einer Ätzung
DE60143228T Expired - Lifetime DE60143228D1 (de) 2000-08-31 2001-08-07 Verfahren zur Reinigung nach einer Ätzung

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE60143229T Expired - Lifetime DE60143229D1 (de) 2000-08-31 2001-08-07 Verfahren zur Reinigung nach einer Ätzung
DE60143228T Expired - Lifetime DE60143228D1 (de) 2000-08-31 2001-08-07 Verfahren zur Reinigung nach einer Ätzung

Country Status (4)

Country Link
US (1) US6692976B1 (enExample)
EP (3) EP1453085B1 (enExample)
JP (1) JP4898030B2 (enExample)
DE (3) DE60124487T2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10260352A1 (de) * 2002-12-20 2004-07-15 Infineon Technologies Ag Verfahren zum Herstellen einer Kondensatoranordnung und Kondensatoranordnung
US7132370B2 (en) * 2003-08-01 2006-11-07 Interuniversitair Microelektronica Centrum (Imec) Method for selective removal of high-k material
TWI385720B (zh) * 2004-03-24 2013-02-11 東楚股份有限公司 Etching composition and etching treatment method
CN100352013C (zh) * 2004-07-16 2007-11-28 鸿富锦精密工业（深圳）有限公司 干蚀刻后处理方法
EP1648024A1 (en) * 2004-10-15 2006-04-19 Sez Ag Method for removing particles from a surface
US7220600B2 (en) * 2004-12-17 2007-05-22 Texas Instruments Incorporated Ferroelectric capacitor stack etch cleaning methods
US20090061632A1 (en) * 2007-08-28 2009-03-05 Texas Instruments Incorporated Methods for cleaning etch residue deposited by wet etch processes for high-k dielectrics
JP4998337B2 (ja) * 2008-03-11 2012-08-15 Ｔｄｋ株式会社 誘電体素子の製造方法
JP4665025B2 (ja) * 2008-12-16 2011-04-06 Ｔｄｋ株式会社 圧電素子の製造方法
US8318606B2 (en) * 2009-08-25 2012-11-27 Lsi Corporation Dielectric etching
JP2012056194A (ja) * 2010-09-09 2012-03-22 Seiko Epson Corp 圧電素子、圧電アクチュエーター、液体噴射ヘッド、および液体噴射装置
JP2013102089A (ja) * 2011-11-09 2013-05-23 Adeka Corp チタン酸鉛系材料用エッチング剤組成物
US8613863B2 (en) * 2011-11-29 2013-12-24 Intermolecular, Inc. Methods for selective etching of a multi-layer substrate
JP6353636B2 (ja) * 2013-06-21 2018-07-04 東京エレクトロン株式会社 酸化チタン膜の除去方法および除去装置
US10754578B2 (en) 2018-05-09 2020-08-25 Micron Technology, Inc. Memory buffer management and bypass
US10942854B2 (en) 2018-05-09 2021-03-09 Micron Technology, Inc. Prefetch management for memory
US11010092B2 (en) 2018-05-09 2021-05-18 Micron Technology, Inc. Prefetch signaling in memory system or sub-system
US10714159B2 (en) 2018-05-09 2020-07-14 Micron Technology, Inc. Indication in memory system or sub-system of latency associated with performing an access command

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3099609A (en) * 1961-09-11 1963-07-30 Katayose Kimiyoshi Method of electroplating aluminum or its alloy with porous hard chromium
US4040897A (en) * 1975-05-05 1977-08-09 Signetics Corporation Etchants for glass films on metal substrates
JPS5741365A (en) * 1980-08-22 1982-03-08 Ishikawajima Harima Heavy Ind Co Ltd Aluminizing method for iron and steel
US4496612A (en) * 1982-04-06 1985-01-29 E. I. Du Pont De Nemours And Company Aqueous flux for hot dip metalizing process
JPS6064437A (ja) * 1983-09-20 1985-04-13 Toshiba Corp 鉛系パツシベ−シヨンガラスのエツチング液
US4759823A (en) * 1987-06-02 1988-07-26 Krysalis Corporation Method for patterning PLZT thin films
JPH06163496A (ja) * 1992-11-24 1994-06-10 Mitsubishi Materials Corp シリコンウェーハの洗浄液およびその洗浄方法
US5337207A (en) * 1992-12-21 1994-08-09 Motorola High-permittivity dielectric capacitor for use in a semiconductor device and process for making the same
US5258093A (en) * 1992-12-21 1993-11-02 Motorola, Inc. Procss for fabricating a ferroelectric capacitor in a semiconductor device
BR9304546A (pt) * 1993-11-19 1995-08-01 Brasilia Telecom Processo para deposição química seguida da deposição eletrolítica de metais sobre alumina
US5681398A (en) * 1995-03-17 1997-10-28 Purex Co., Ltd. Silicone wafer cleaning method
DK0834314T3 (da) * 1995-06-12 2003-02-24 Ono Pharmaceutical Co Granuler der indeholder pranlukast, fremgangsmåde til fremstilling af granulerne, og fremgangsmåde til reduktion af pranlukasts klæbeevne
DE69625747T2 (de) * 1995-06-19 2003-10-23 Interuniversitair Micro-Electronica Centrum Vzw, Leuven-Heverlee Ätzverfahren für CoSi2-Schichten und Verfahren zur Herstellung von Schottky-Barrieren Detektoren unter Verwendung desselben
JP2954877B2 (ja) * 1996-06-18 1999-09-27 松下電子工業株式会社 容量素子の製造方法
JPH1055993A (ja) 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
JP3274389B2 (ja) * 1996-08-12 2002-04-15 株式会社東芝 半導体基板の洗浄方法
US5826773A (en) * 1997-01-31 1998-10-27 Straemke; Siegfried Rope material transfer structure
US6630074B1 (en) * 1997-04-04 2003-10-07 International Business Machines Corporation Etching composition and use thereof
JP3337622B2 (ja) * 1997-07-16 2002-10-21 松下電器産業株式会社 選択的エッチング液及びそのエッチング液を用いた半導体装置の製造方法
US5989948A (en) * 1997-09-22 1999-11-23 Vlsi Technology, Inc. Methods of forming pairs of transistors, and methods of forming pairs of transistors having different voltage tolerances
FR2769248B1 (fr) * 1997-10-06 2000-01-28 St Microelectronics Sa Procede de nettoyage post-polissage mecano-chimique d'une couche d'oxyde ou de nitrure deposee sur un substrat
US6294027B1 (en) * 1997-10-21 2001-09-25 Lam Research Corporation Methods and apparatus for cleaning semiconductor substrates after polishing of copper film
JP3185732B2 (ja) * 1997-11-20 2001-07-11 日本電気株式会社 基板表面金属汚染除去方法
US6346505B1 (en) * 1998-01-16 2002-02-12 Kurita Water Industries, Ltd. Cleaning solution for electromaterials and method for using same
EP0968979A1 (en) * 1998-06-30 2000-01-05 Siemens Aktiengesellschaft Etching of Bi-based metal oxides ceramics
US6127282A (en) * 1998-11-12 2000-10-03 Advanced Micro Devices, Inc. Method for removing copper residue from surfaces of a semiconductor wafer
US6562726B1 (en) * 1999-06-29 2003-05-13 Micron Technology, Inc. Acid blend for removing etch residue

Also Published As

Publication number Publication date
US6692976B1 (en) 2004-02-17
DE60143228D1 (de) 2010-11-18
EP1195803A2 (en) 2002-04-10
JP4898030B2 (ja) 2012-03-14
EP1453085A2 (en) 2004-09-01
EP1453085B1 (en) 2010-10-06
EP1195803A3 (en) 2003-12-10
JP2002151484A (ja) 2002-05-24
EP1453084A2 (en) 2004-09-01
EP1195803B1 (en) 2006-11-15
EP1453084B1 (en) 2010-10-06
EP1453084A3 (en) 2004-09-15
EP1453085A3 (en) 2004-09-15
DE60143229D1 (de) 2010-11-18
DE60124487D1 (de) 2006-12-28

Similar Documents

Publication Publication Date Title
DE60124487T2 (de) Verfahren zur Reinigung nach einer Ätzung
DE69425812T2 (de) Kupferbasierte Lösung zum Polieren von Metall und Verfahren zur Herstellung einer Halbleiter-Anordnung
DE10256964A1 (de) Plasmaätzen von Ir und PZT unter Verwendung einer Hartmaske und einer chemischen Zusammensetzung aus CL¶2¶/N¶2¶/O¶2¶ und CL¶2¶/CHF¶3¶/O¶2¶
DE10231192A1 (de) Verunreinigungssteuerung für Herstellungsverfahren eingebetteter ferroelektrischer Bauelemente
DE19733391C2 (de) Strukturierungsverfahren
EP0895278A2 (de) Strukturierungsverfahren
JP2002025967A (ja) 強誘電体膜の損傷層を除去するための清浄液及びこれを利用した清浄方法
CN1252802C (zh) 刻蚀含铋氧化物膜的方法
JP2000133643A (ja) エッチング液を用いたｐｚｔ系薄膜の洗浄方法
JP4054887B2 (ja) ケイ化ルテニウムのウェットエッチング方法及びエッチング液
EP1111083B1 (de) Verfahren zur Herstellung einer strukturierten Metallschicht
JP2000173999A (ja) 半導体装置の製造方法
DE112004000192T5 (de) Hartmaske mit hoher Selektivität für IR-Sperrschichten zur Herstellung eines ferroelektrischen Kondensators
DE19511236A1 (de) Reinigungsflüssigkeit für Silizium-Wafer und Verfahren zur Reinigung von Silizium-Wafern unter Verwendung dieser Reinigungsflüssigkeit
DE10048477A1 (de) Verfahren zum chemisch-mechanischen Polieren von Schichten aus Metallen der Platingruppe
DE2239145A1 (de) Verfahren zur behandlung von halbleitermaterialien aus iii-v-verbindungen
DE10058886C1 (de) Verfahren zur Herstellung eines integrierten Halbleiter-Produkts
JP3173598B2 (ja) 半導体基板の洗浄方法および洗浄装置
DE112004001585T5 (de) Zaunfreies Ätzen einer Iridium-Barriere mit einem steilen Böschungswinkel
DE19935131B4 (de) Verfahren zur Beseitigung von Redepositionen von einem Wafer
DE102004037007B4 (de) Ätzverfahren zur Herstellung einer Halbleitervorrichtung
DE102005005229B4 (de) Nasschemisches Ätzverfahren für MOS-Schichtstrukturen mit praseodymoxidhaltigen Dielektrikum
DE102004009562A1 (de) Verfahren zur Ausbildung von rückstandsfreien Hartmaskenelementen während eines Halbleiterbauelementherstellungsprozesses
DE102004004782A1 (de) Verfahren zum Reduzieren der Kontamination von Geräten zur Verarbeitung von Halbleitern
KR19980082844A (ko) 백금을 포함하는 반도체소자를 위한 세정용액, 이를 사용한 세정방법 및 이를 사용한 메모리소자의 제조방법

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: DILG HAEUSLER SCHINDELMANN PATENTANWALTSGESELLSCHA