DE60124487D1 - Verfahren zur Reinigung nach einer Ätzung - Google Patents
Verfahren zur Reinigung nach einer ÄtzungInfo
- Publication number
- DE60124487D1 DE60124487D1 DE60124487T DE60124487T DE60124487D1 DE 60124487 D1 DE60124487 D1 DE 60124487D1 DE 60124487 T DE60124487 T DE 60124487T DE 60124487 T DE60124487 T DE 60124487T DE 60124487 D1 DE60124487 D1 DE 60124487D1
- Authority
- DE
- Germany
- Prior art keywords
- etching
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004140 cleaning Methods 0.000 title 1
- 238000005530 etching Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Semiconductor Memories (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/650,224 US6692976B1 (en) | 2000-08-31 | 2000-08-31 | Post-etch cleaning treatment |
US650224 | 2000-08-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60124487D1 true DE60124487D1 (de) | 2006-12-28 |
DE60124487T2 DE60124487T2 (de) | 2007-03-01 |
Family
ID=24608004
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60124487T Expired - Lifetime DE60124487T2 (de) | 2000-08-31 | 2001-08-07 | Verfahren zur Reinigung nach einer Ätzung |
DE60143229T Expired - Lifetime DE60143229D1 (de) | 2000-08-31 | 2001-08-07 | Verfahren zur Reinigung nach einer Ätzung |
DE60143228T Expired - Lifetime DE60143228D1 (de) | 2000-08-31 | 2001-08-07 | Verfahren zur Reinigung nach einer Ätzung |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60143229T Expired - Lifetime DE60143229D1 (de) | 2000-08-31 | 2001-08-07 | Verfahren zur Reinigung nach einer Ätzung |
DE60143228T Expired - Lifetime DE60143228D1 (de) | 2000-08-31 | 2001-08-07 | Verfahren zur Reinigung nach einer Ätzung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6692976B1 (de) |
EP (3) | EP1453084B1 (de) |
JP (1) | JP4898030B2 (de) |
DE (3) | DE60124487T2 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10260352A1 (de) * | 2002-12-20 | 2004-07-15 | Infineon Technologies Ag | Verfahren zum Herstellen einer Kondensatoranordnung und Kondensatoranordnung |
EP1511074B1 (de) * | 2003-08-01 | 2015-01-28 | Imec | Verfahren zur selektiven Entfernung von Material mit hohem K |
TWI385720B (zh) * | 2004-03-24 | 2013-02-11 | Tosoh Corp | Etching composition and etching treatment method |
CN100352013C (zh) * | 2004-07-16 | 2007-11-28 | 鸿富锦精密工业(深圳)有限公司 | 干蚀刻后处理方法 |
EP1648024A1 (de) * | 2004-10-15 | 2006-04-19 | Sez Ag | Methode zum Entfernen von Partikeln von einer Oberfläche |
US7220600B2 (en) * | 2004-12-17 | 2007-05-22 | Texas Instruments Incorporated | Ferroelectric capacitor stack etch cleaning methods |
US20090061632A1 (en) * | 2007-08-28 | 2009-03-05 | Texas Instruments Incorporated | Methods for cleaning etch residue deposited by wet etch processes for high-k dielectrics |
JP4998337B2 (ja) * | 2008-03-11 | 2012-08-15 | Tdk株式会社 | 誘電体素子の製造方法 |
JP4665025B2 (ja) * | 2008-12-16 | 2011-04-06 | Tdk株式会社 | 圧電素子の製造方法 |
US8318606B2 (en) * | 2009-08-25 | 2012-11-27 | Lsi Corporation | Dielectric etching |
JP2012056194A (ja) | 2010-09-09 | 2012-03-22 | Seiko Epson Corp | 圧電素子、圧電アクチュエーター、液体噴射ヘッド、および液体噴射装置 |
JP2013102089A (ja) * | 2011-11-09 | 2013-05-23 | Adeka Corp | チタン酸鉛系材料用エッチング剤組成物 |
US8613863B2 (en) * | 2011-11-29 | 2013-12-24 | Intermolecular, Inc. | Methods for selective etching of a multi-layer substrate |
JP6353636B2 (ja) * | 2013-06-21 | 2018-07-04 | 東京エレクトロン株式会社 | 酸化チタン膜の除去方法および除去装置 |
US10754578B2 (en) | 2018-05-09 | 2020-08-25 | Micron Technology, Inc. | Memory buffer management and bypass |
US10714159B2 (en) | 2018-05-09 | 2020-07-14 | Micron Technology, Inc. | Indication in memory system or sub-system of latency associated with performing an access command |
US10942854B2 (en) | 2018-05-09 | 2021-03-09 | Micron Technology, Inc. | Prefetch management for memory |
US11010092B2 (en) * | 2018-05-09 | 2021-05-18 | Micron Technology, Inc. | Prefetch signaling in memory system or sub-system |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3099609A (en) * | 1961-09-11 | 1963-07-30 | Katayose Kimiyoshi | Method of electroplating aluminum or its alloy with porous hard chromium |
US4040897A (en) * | 1975-05-05 | 1977-08-09 | Signetics Corporation | Etchants for glass films on metal substrates |
JPS5741365A (en) * | 1980-08-22 | 1982-03-08 | Ishikawajima Harima Heavy Ind Co Ltd | Aluminizing method for iron and steel |
US4496612A (en) * | 1982-04-06 | 1985-01-29 | E. I. Du Pont De Nemours And Company | Aqueous flux for hot dip metalizing process |
JPS6064437A (ja) * | 1983-09-20 | 1985-04-13 | Toshiba Corp | 鉛系パツシベ−シヨンガラスのエツチング液 |
US4759823A (en) * | 1987-06-02 | 1988-07-26 | Krysalis Corporation | Method for patterning PLZT thin films |
JPH06163496A (ja) * | 1992-11-24 | 1994-06-10 | Mitsubishi Materials Corp | シリコンウェーハの洗浄液およびその洗浄方法 |
US5337207A (en) * | 1992-12-21 | 1994-08-09 | Motorola | High-permittivity dielectric capacitor for use in a semiconductor device and process for making the same |
US5258093A (en) * | 1992-12-21 | 1993-11-02 | Motorola, Inc. | Procss for fabricating a ferroelectric capacitor in a semiconductor device |
BR9304546A (pt) * | 1993-11-19 | 1995-08-01 | Brasilia Telecom | Processo para deposição química seguida da deposição eletrolítica de metais sobre alumina |
US5681398A (en) * | 1995-03-17 | 1997-10-28 | Purex Co., Ltd. | Silicone wafer cleaning method |
EP0834314B1 (de) * | 1995-06-12 | 2003-01-15 | Ono Pharmaceutical Co., Ltd. | Pranlukast enthaltende granula, verfahren zur herstellung der granula und verfahren zur verminderung des zusammenbackens von pranlukast |
EP0750338B1 (de) * | 1995-06-19 | 2003-01-15 | Interuniversitair Micro-Elektronica Centrum Vzw | Ätzverfahren für CoSi2-Schichten und Verfahren zur Herstellung von Schottky-Barrieren Detektoren unter Verwendung desselben |
JP2954877B2 (ja) * | 1996-06-18 | 1999-09-27 | 松下電子工業株式会社 | 容量素子の製造方法 |
JPH1055993A (ja) | 1996-08-09 | 1998-02-24 | Hitachi Ltd | 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法 |
JP3274389B2 (ja) * | 1996-08-12 | 2002-04-15 | 株式会社東芝 | 半導体基板の洗浄方法 |
US5826773A (en) * | 1997-01-31 | 1998-10-27 | Straemke; Siegfried | Rope material transfer structure |
US6630074B1 (en) * | 1997-04-04 | 2003-10-07 | International Business Machines Corporation | Etching composition and use thereof |
JP3337622B2 (ja) * | 1997-07-16 | 2002-10-21 | 松下電器産業株式会社 | 選択的エッチング液及びそのエッチング液を用いた半導体装置の製造方法 |
US5989948A (en) * | 1997-09-22 | 1999-11-23 | Vlsi Technology, Inc. | Methods of forming pairs of transistors, and methods of forming pairs of transistors having different voltage tolerances |
FR2769248B1 (fr) * | 1997-10-06 | 2000-01-28 | St Microelectronics Sa | Procede de nettoyage post-polissage mecano-chimique d'une couche d'oxyde ou de nitrure deposee sur un substrat |
US6294027B1 (en) * | 1997-10-21 | 2001-09-25 | Lam Research Corporation | Methods and apparatus for cleaning semiconductor substrates after polishing of copper film |
JP3185732B2 (ja) * | 1997-11-20 | 2001-07-11 | 日本電気株式会社 | 基板表面金属汚染除去方法 |
US6346505B1 (en) * | 1998-01-16 | 2002-02-12 | Kurita Water Industries, Ltd. | Cleaning solution for electromaterials and method for using same |
EP0968979A1 (de) * | 1998-06-30 | 2000-01-05 | Siemens Aktiengesellschaft | Ätzen von Metalloxidkeramiken auf Bi-Basis |
US6127282A (en) * | 1998-11-12 | 2000-10-03 | Advanced Micro Devices, Inc. | Method for removing copper residue from surfaces of a semiconductor wafer |
US6562726B1 (en) * | 1999-06-29 | 2003-05-13 | Micron Technology, Inc. | Acid blend for removing etch residue |
-
2000
- 2000-08-31 US US09/650,224 patent/US6692976B1/en not_active Expired - Lifetime
-
2001
- 2001-08-07 EP EP04012769A patent/EP1453084B1/de not_active Expired - Lifetime
- 2001-08-07 EP EP04012770A patent/EP1453085B1/de not_active Expired - Lifetime
- 2001-08-07 DE DE60124487T patent/DE60124487T2/de not_active Expired - Lifetime
- 2001-08-07 EP EP01119044A patent/EP1195803B1/de not_active Expired - Lifetime
- 2001-08-07 DE DE60143229T patent/DE60143229D1/de not_active Expired - Lifetime
- 2001-08-07 DE DE60143228T patent/DE60143228D1/de not_active Expired - Lifetime
- 2001-08-21 JP JP2001250341A patent/JP4898030B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE60143228D1 (de) | 2010-11-18 |
EP1453084A2 (de) | 2004-09-01 |
US6692976B1 (en) | 2004-02-17 |
EP1453084A3 (de) | 2004-09-15 |
DE60143229D1 (de) | 2010-11-18 |
EP1195803B1 (de) | 2006-11-15 |
EP1195803A3 (de) | 2003-12-10 |
JP2002151484A (ja) | 2002-05-24 |
EP1453085B1 (de) | 2010-10-06 |
EP1453085A3 (de) | 2004-09-15 |
EP1195803A2 (de) | 2002-04-10 |
EP1453084B1 (de) | 2010-10-06 |
JP4898030B2 (ja) | 2012-03-14 |
DE60124487T2 (de) | 2007-03-01 |
EP1453085A2 (de) | 2004-09-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: DILG HAEUSLER SCHINDELMANN PATENTANWALTSGESELLSCHA |