DE60117036D1 - Laserbearbeitung von halbleitermaterialen - Google Patents

Laserbearbeitung von halbleitermaterialen

Info

Publication number
DE60117036D1
DE60117036D1 DE60117036T DE60117036T DE60117036D1 DE 60117036 D1 DE60117036 D1 DE 60117036D1 DE 60117036 T DE60117036 T DE 60117036T DE 60117036 T DE60117036 T DE 60117036T DE 60117036 D1 DE60117036 D1 DE 60117036D1
Authority
DE
Germany
Prior art keywords
laser processing
semiconductor materials
cut
directing
edges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60117036T
Other languages
English (en)
Other versions
DE60117036T2 (de
Inventor
Adrian Boyle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xsil Technology Ltd
Original Assignee
Xsil Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xsil Technology Ltd filed Critical Xsil Technology Ltd
Application granted granted Critical
Publication of DE60117036D1 publication Critical patent/DE60117036D1/de
Publication of DE60117036T2 publication Critical patent/DE60117036T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
DE60117036T 2000-12-15 2001-10-26 Laserbearbeitung von halbleitermaterialen Expired - Fee Related DE60117036T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
IE20001021 2000-12-15
IE20001021 2000-12-15
EP01650016 2001-02-09
EP01650016 2001-02-09
PCT/IE2001/000137 WO2002047863A1 (en) 2000-12-15 2001-10-26 Laser machining of semiconductor materials

Publications (2)

Publication Number Publication Date
DE60117036D1 true DE60117036D1 (de) 2006-04-13
DE60117036T2 DE60117036T2 (de) 2006-08-03

Family

ID=26077326

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60117036T Expired - Fee Related DE60117036T2 (de) 2000-12-15 2001-10-26 Laserbearbeitung von halbleitermaterialen

Country Status (10)

Country Link
US (1) US6841482B2 (de)
EP (1) EP1341638B1 (de)
JP (1) JP2004515365A (de)
KR (1) KR20030064808A (de)
CN (1) CN1257038C (de)
AT (1) ATE316841T1 (de)
AU (1) AU2002210860A1 (de)
DE (1) DE60117036T2 (de)
IE (1) IE20010944A1 (de)
WO (1) WO2002047863A1 (de)

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DE10210040C1 (de) * 2002-03-07 2003-10-30 Siemens Ag Betriebsverfahren und Transportwagen für eine Laserbearbeitungsanlage
US6969822B2 (en) 2003-05-13 2005-11-29 Hewlett-Packard Development Company, L.P. Laser micromachining systems
US7754999B2 (en) 2003-05-13 2010-07-13 Hewlett-Packard Development Company, L.P. Laser micromachining and methods of same
US7687740B2 (en) * 2004-06-18 2010-03-30 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
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US7435927B2 (en) 2004-06-18 2008-10-14 Electron Scientific Industries, Inc. Semiconductor link processing using multiple laterally spaced laser beam spots with on-axis offset
US7629234B2 (en) * 2004-06-18 2009-12-08 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling
US7935941B2 (en) * 2004-06-18 2011-05-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
US8383982B2 (en) * 2004-06-18 2013-02-26 Electro Scientific Industries, Inc. Methods and systems for semiconductor structure processing using multiple laser beam spots
US7425471B2 (en) * 2004-06-18 2008-09-16 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset
US8148211B2 (en) * 2004-06-18 2012-04-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously
US7923658B2 (en) * 2004-09-13 2011-04-12 Hewlett-Packard Development Company, L.P. Laser micromachining methods and systems
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US7611966B2 (en) * 2005-05-05 2009-11-03 Intel Corporation Dual pulsed beam laser micromachining method
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US8168514B2 (en) * 2006-08-24 2012-05-01 Corning Incorporated Laser separation of thin laminated glass substrates for flexible display applications
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US8168265B2 (en) 2008-06-06 2012-05-01 Applied Materials, Inc. Method for manufacturing electrochromic devices
KR101107859B1 (ko) * 2008-09-12 2012-01-31 오므론 가부시키가이샤 할단용 스크라이브선의 형성 방법 및 장치
US8426250B2 (en) * 2008-10-22 2013-04-23 Intel Corporation Laser-assisted chemical singulation of a wafer
US20100129984A1 (en) * 2008-11-26 2010-05-27 George Vakanas Wafer singulation in high volume manufacturing
US7710671B1 (en) * 2008-12-12 2010-05-04 Applied Materials, Inc. Laminated electrically tintable windows
US8383984B2 (en) 2010-04-02 2013-02-26 Electro Scientific Industries, Inc. Method and apparatus for laser singulation of brittle materials
CN102479885B (zh) * 2010-11-22 2013-08-07 威控自动化机械股份有限公司 半导体元件的制造方法
US9732196B2 (en) 2011-05-10 2017-08-15 Sabic Global Technologies B.V. Adhesive for bonding polyimide resins
TWI493611B (zh) * 2011-05-11 2015-07-21 隆達電子股份有限公司 雷射切割的方法
KR101945260B1 (ko) 2011-08-08 2019-02-07 어플라이드 머티어리얼스, 인코포레이티드 레이저 패터닝을 위해 통합된 차광층들 및 차열층들을 구비한 박막 구조물들 및 디바이스들
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CN102751400B (zh) * 2012-07-18 2016-02-10 合肥彩虹蓝光科技有限公司 一种含金属背镀的半导体原件的切割方法
CN102941413B (zh) * 2012-11-23 2015-07-01 武汉钢铁(集团)公司 一种取向硅钢多次激光刻槽降低铁损的方法
US10286487B2 (en) 2013-02-28 2019-05-14 Ipg Photonics Corporation Laser system and method for processing sapphire
US9764427B2 (en) 2014-02-28 2017-09-19 Ipg Photonics Corporation Multi-laser system and method for cutting and post-cut processing hard dielectric materials
EP3110592B1 (de) 2014-02-28 2020-01-15 IPG Photonics Corporation Unterschiedliche wellenlängen und pulsdauerverarbeitung einer vielzahl von lasern
US10343237B2 (en) 2014-02-28 2019-07-09 Ipg Photonics Corporation System and method for laser beveling and/or polishing
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Also Published As

Publication number Publication date
CN1481290A (zh) 2004-03-10
US20020086544A1 (en) 2002-07-04
CN1257038C (zh) 2006-05-24
JP2004515365A (ja) 2004-05-27
DE60117036T2 (de) 2006-08-03
WO2002047863A1 (en) 2002-06-20
ATE316841T1 (de) 2006-02-15
IE20010944A1 (en) 2002-08-21
AU2002210860A1 (en) 2002-06-24
EP1341638A1 (de) 2003-09-10
EP1341638B1 (de) 2006-02-01
US6841482B2 (en) 2005-01-11
KR20030064808A (ko) 2003-08-02

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