AU2002210860A1 - Laser machining of semiconductor materials - Google Patents

Laser machining of semiconductor materials

Info

Publication number
AU2002210860A1
AU2002210860A1 AU2002210860A AU1086002A AU2002210860A1 AU 2002210860 A1 AU2002210860 A1 AU 2002210860A1 AU 2002210860 A AU2002210860 A AU 2002210860A AU 1086002 A AU1086002 A AU 1086002A AU 2002210860 A1 AU2002210860 A1 AU 2002210860A1
Authority
AU
Australia
Prior art keywords
semiconductor materials
laser machining
cut
directing
edges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002210860A
Inventor
Adrian Boyle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xsil Technology Ltd
Original Assignee
Xsil Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xsil Technology Ltd filed Critical Xsil Technology Ltd
Publication of AU2002210860A1 publication Critical patent/AU2002210860A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

A semiconductor is cut by directing a green laser beam of high power, and subsequently directing a UV beam along the cut line. The first beam performs cutting with relatively rough edges and a high material removal rate, and the second beam completes the cut at the edges for the required finish, with a lower material quantity removal.
AU2002210860A 2000-12-15 2001-10-26 Laser machining of semiconductor materials Abandoned AU2002210860A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
IE2000/1021 2000-12-15
IE20001021 2000-12-15
EP01650016 2001-02-09
EP01650016 2001-02-09
PCT/IE2001/000137 WO2002047863A1 (en) 2000-12-15 2001-10-26 Laser machining of semiconductor materials

Publications (1)

Publication Number Publication Date
AU2002210860A1 true AU2002210860A1 (en) 2002-06-24

Family

ID=26077326

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002210860A Abandoned AU2002210860A1 (en) 2000-12-15 2001-10-26 Laser machining of semiconductor materials

Country Status (10)

Country Link
US (1) US6841482B2 (en)
EP (1) EP1341638B1 (en)
JP (1) JP2004515365A (en)
KR (1) KR20030064808A (en)
CN (1) CN1257038C (en)
AT (1) ATE316841T1 (en)
AU (1) AU2002210860A1 (en)
DE (1) DE60117036T2 (en)
IE (1) IE20010944A1 (en)
WO (1) WO2002047863A1 (en)

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US7754999B2 (en) 2003-05-13 2010-07-13 Hewlett-Packard Development Company, L.P. Laser micromachining and methods of same
US6969822B2 (en) 2003-05-13 2005-11-29 Hewlett-Packard Development Company, L.P. Laser micromachining systems
US8148211B2 (en) * 2004-06-18 2012-04-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously
US7435927B2 (en) 2004-06-18 2008-10-14 Electron Scientific Industries, Inc. Semiconductor link processing using multiple laterally spaced laser beam spots with on-axis offset
US7633034B2 (en) * 2004-06-18 2009-12-15 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure
US7923306B2 (en) * 2004-06-18 2011-04-12 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots
US7687740B2 (en) * 2004-06-18 2010-03-30 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US7629234B2 (en) * 2004-06-18 2009-12-08 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling
US7935941B2 (en) * 2004-06-18 2011-05-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
US8383982B2 (en) * 2004-06-18 2013-02-26 Electro Scientific Industries, Inc. Methods and systems for semiconductor structure processing using multiple laser beam spots
US7923658B2 (en) * 2004-09-13 2011-04-12 Hewlett-Packard Development Company, L.P. Laser micromachining methods and systems
US9034731B2 (en) * 2005-02-03 2015-05-19 Stats Chippac Ltd. Integrated, integrated circuit singulation system
NL1028588C2 (en) * 2005-03-22 2006-09-25 Fico Bv Method and device for separating products with a controlled cut edge and separated product.
JP4751634B2 (en) 2005-03-31 2011-08-17 富士通セミコンダクター株式会社 Manufacturing method of semiconductor device
US7611966B2 (en) * 2005-05-05 2009-11-03 Intel Corporation Dual pulsed beam laser micromachining method
US7687417B2 (en) * 2005-11-16 2010-03-30 E.I. Du Pont De Nemours And Company Lead free glass(es), thick film paste(s), tape composition(s) and low temperature cofired ceramic devices made therefrom
US8168514B2 (en) * 2006-08-24 2012-05-01 Corning Incorporated Laser separation of thin laminated glass substrates for flexible display applications
US8053279B2 (en) * 2007-06-19 2011-11-08 Micron Technology, Inc. Methods and systems for imaging and cutting semiconductor wafers and other semiconductor workpieces
WO2009050938A1 (en) * 2007-10-16 2009-04-23 Mitsuboshi Diamond Industrial Co., Ltd. Method of machining u-shaped groove of substrate of fragile material, removal method, boring method and chamfering method using the same method
SG152090A1 (en) * 2007-10-23 2009-05-29 Hypertronics Pte Ltd Scan head calibration system and method
KR20090123280A (en) * 2008-05-27 2009-12-02 삼성전자주식회사 Method of fabricating semiconductor chip package, semiconductor wafer and method of sawing the same
US8168265B2 (en) * 2008-06-06 2012-05-01 Applied Materials, Inc. Method for manufacturing electrochromic devices
KR101107859B1 (en) * 2008-09-12 2012-01-31 오므론 가부시키가이샤 Forming method and device of scribing-line for cutting
US8426250B2 (en) * 2008-10-22 2013-04-23 Intel Corporation Laser-assisted chemical singulation of a wafer
US20100129984A1 (en) * 2008-11-26 2010-05-27 George Vakanas Wafer singulation in high volume manufacturing
US7710671B1 (en) 2008-12-12 2010-05-04 Applied Materials, Inc. Laminated electrically tintable windows
US8383984B2 (en) * 2010-04-02 2013-02-26 Electro Scientific Industries, Inc. Method and apparatus for laser singulation of brittle materials
CN102479885B (en) * 2010-11-22 2013-08-07 威控自动化机械股份有限公司 Method for manufacturing semiconductor element
US9732196B2 (en) 2011-05-10 2017-08-15 Sabic Global Technologies B.V. Adhesive for bonding polyimide resins
TWI493611B (en) * 2011-05-11 2015-07-21 隆達電子股份有限公司 Methods of laser cutting
US8993443B2 (en) 2011-08-08 2015-03-31 Applied Materials, Inc. Thin film structures and devices with integrated light and heat blocking layers for laser patterning
US8361828B1 (en) * 2011-08-31 2013-01-29 Alta Devices, Inc. Aligned frontside backside laser dicing of semiconductor films
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CN102751400B (en) * 2012-07-18 2016-02-10 合肥彩虹蓝光科技有限公司 The cutting method of the semiconductor original paper of a kind of containing metal back of the body plating
CN102941413B (en) * 2012-11-23 2015-07-01 武汉钢铁(集团)公司 Method for reducing iron loss of oriented silicon steel through multiple times of laser grooving
US10286487B2 (en) 2013-02-28 2019-05-14 Ipg Photonics Corporation Laser system and method for processing sapphire
EP3110592B1 (en) 2014-02-28 2020-01-15 IPG Photonics Corporation Multple-laser distinct wavelengths and pulse durations processing
US9764427B2 (en) 2014-02-28 2017-09-19 Ipg Photonics Corporation Multi-laser system and method for cutting and post-cut processing hard dielectric materials
US10343237B2 (en) 2014-02-28 2019-07-09 Ipg Photonics Corporation System and method for laser beveling and/or polishing
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Also Published As

Publication number Publication date
EP1341638B1 (en) 2006-02-01
US6841482B2 (en) 2005-01-11
CN1481290A (en) 2004-03-10
KR20030064808A (en) 2003-08-02
EP1341638A1 (en) 2003-09-10
DE60117036T2 (en) 2006-08-03
CN1257038C (en) 2006-05-24
DE60117036D1 (en) 2006-04-13
ATE316841T1 (en) 2006-02-15
US20020086544A1 (en) 2002-07-04
WO2002047863A1 (en) 2002-06-20
IE20010944A1 (en) 2002-08-21
JP2004515365A (en) 2004-05-27

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