CN112404745A - Ultrafast laser leveling method for cut surface of thin crystal device - Google Patents
Ultrafast laser leveling method for cut surface of thin crystal device Download PDFInfo
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- CN112404745A CN112404745A CN202011200895.5A CN202011200895A CN112404745A CN 112404745 A CN112404745 A CN 112404745A CN 202011200895 A CN202011200895 A CN 202011200895A CN 112404745 A CN112404745 A CN 112404745A
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- laser
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/3568—Modifying rugosity
- B23K26/3576—Diminishing rugosity, e.g. grinding; Polishing; Smoothing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Abstract
The invention relates to an ultrafast laser leveling method for a cut surface of a thin crystal device. The method comprises the following steps: the method comprises the following steps of placing a thin crystal on a workbench, positioning and clamping, and cutting the thin crystal by using ultrafast laser; after cutting, replacing a long-focus laser lens, and turning the cut wafer by 180 degrees; adjusting the relative position of the ultrafast laser and the cut processed wafer, and observing the laser filament through a displacement sensor to enable the upper surface of the laser filament to be located N micrometers below a to-be-cut surface; and (3) externally cutting the light spot projected by the laser on the surface to be cut with the cutting edge, cutting M microns from the edge to the inside of the wafer, entering an initial processing station, and finishing the cutting surface by adopting an envelope scanning method. The invention can solve the problems of poor surface roughness, verticality and planeness of the cut surface of the thin crystal.
Description
Technical Field
The invention relates to the field of leveling of a cut surface of a thin crystal device, in particular to an ultrafast laser leveling method for the cut surface of the thin crystal device.
Background
With the updating and iteration of the technology and the continuous deepening of the application of the crystal material, higher requirements are put forward on the processing precision of the crystal material. For example, in the sensing field, some crystal materials are used as sensing elements, and in order to improve the sensitivity of the sensor, the crystal materials need to be coated with related sensitive materials to improve the sensitivity of the sensor, and the firmness of the sensitive materials is related to the sensing precision and the service life of the sensor, and the firmness of the sensitive materials is closely related to the surface roughness of the crystal materials. The processing precision of the crystal material mainly relates to the surface roughness, the planeness and the verticality of a processed crystal surface. So far, the cutting surface can not meet the film covering requirements on the indexes of surface roughness, planeness, verticality and the like when the crystal is cut due to the shape and energy distribution of the ultrafast laser.
As a new technical means, the ultrafast laser is widely applied to precise micromachining, generally refers to picosecond laser or femtosecond laser, theoretically, when the laser pulse width reaches the picosecond or femtosecond magnitude, the influence on molecular thermal motion can be avoided to a great extent, less thermal influence is generated, and the interaction time of ultrashort pulse generated by the ultrafast laser and a material is extremely short, so that the thermal influence on surrounding materials can not be brought. Ultrafast laser is often applied in the field of superfinishing.
In the following, the flattening method of the crystal cutting surface is mostly concentrated on polishing, the general polishing technology mainly adopts manual grinding and magnetic fluid polishing, both the manual grinding and the magnetic fluid polishing belong to contact polishing technologies, the manual grinding is limited by the technical level of workers and has high labor intensity although higher processing quality can be obtained, and the flatness and the verticality of the processing surface cannot be ensured; magnetic fluid polishing is a polishing processing method of a nonmetal material with wide application, but in the practical application process, the magnetic fluid polishing technology has serious impact on a crystal material and often generates defects of edge breakage, cracks and the like on the processed surface. Therefore, a processing method integrating surface roughness, flatness and verticality is needed.
Disclosure of Invention
The invention aims to provide an ultrafast laser leveling method for a cut surface of a thin crystal device, which can solve the problems of poor surface roughness, verticality and planeness of the cut surface of the thin crystal device.
In order to achieve the purpose, the invention provides the following scheme:
an ultrafast laser leveling method of a cut surface of a thin crystal device, comprising:
the method comprises the following steps of placing a thin crystal on a workbench, positioning and clamping, and cutting the thin crystal by using ultrafast laser;
after cutting, replacing a long-focus laser lens, and turning the cut wafer by 180 degrees;
adjusting the relative position of the ultrafast laser and the cut processed wafer, and observing the laser optical fiber through a displacement sensor to enable the upper surface of the laser optical fiber to be located N micrometers below a to-be-cut surface;
and (3) externally cutting the light spot projected by the laser on the surface to be cut with the cutting edge, cutting M microns from the edge to the inside of the wafer, entering an initial processing station, and finishing the cutting surface by adopting an envelope scanning method.
Alternatively, the flake crystal employs quartz, lithium niobate, silicon carbide, and sapphire flakes.
Optionally, the lamellar crystal thickness is no greater than 0.8 mm.
Optionally, the ultrafast laser includes a picosecond laser and a femtosecond laser.
Optionally, the focal length of the long focus lens ranges from 180 μm to 650 μm.
Optionally, the ultrafast laser has a unit pulse energy ranging from 40 μ J to 100 μ J.
Optionally, the ultrafast laser has a repetition frequency in a range of 10KHZ to 20 KHZ.
Optionally, the scanning speed of the ultrafast laser is 250 μm/s.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the invention applies ultrafast laser to carry out leveling processing on the cut surface of the thin crystal device, changes the limitation of polishing processing for trimming the cut surface of the thin crystal device in the prior art, effectively overcomes the problem that the surface roughness can only be ensured by single polishing processing and the planeness and the verticality can not be ensured, and can simultaneously take into account three indexes of the surface roughness, the planeness and the verticality.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
FIG. 1 is a flow chart of an ultrafast laser leveling method for a cut surface of a thin crystal device according to the present invention
FIG. 2 is a schematic diagram of ultrafast laser planarization of a cut surface of a thin slab crystal device in accordance with the present invention;
FIG. 3 is a schematic diagram of a circular arc trajectory envelope method;
FIG. 4 is a schematic diagram of a sawtooth trajectory envelope method;
FIG. 5 is a schematic view of a tool for an ultrafast laser leveling method for a slice crystal device cut surface according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide an ultrafast laser leveling method for a cut surface of a thin crystal device, which can solve the problems of poor surface roughness, verticality and planeness of the cut surface of the thin crystal device.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
FIG. 1 is a flow chart of an ultrafast laser leveling method for a cut surface of a thin crystal device according to the present invention. As shown in fig. 1, an ultrafast laser leveling method of a cut surface of a thin crystal device includes:
step 101: and (3) placing the thin crystal on a workbench, positioning and clamping, and cutting the thin crystal by using ultrafast laser.
Step 102: and after cutting, replacing the long-focus laser lens, and turning the cut wafer by 180 degrees. After the initial processing of the wafer is completed, the long-focus laser lens needs to be replaced, and the subsequent trimming of the surface appearance of the side section is carried out.
Step 103: and adjusting the relative position of the ultrafast laser and the cut processed wafer, and observing the laser optical fiber through a displacement sensor, so that the upper surface of the laser optical fiber is positioned N micrometers below the surface to be cut.
The value of N is determined by the focal depth of the lens and the processing requirement, and because the amplitude of the cross section of the laser beam follows Gaussian distribution, in order to meet the verticality requirement of a processing surface, the optimal initial focal plane position needs to be determined by testing. Under the condition that the focal depth of the lens is determined, N is a fixed value and is not a range, and the numerical value of different lenses N is different, so that the numerical range cannot be given.
Step 104: and (3) externally cutting the light spot projected by the laser on the surface to be cut with the cutting edge, cutting M microns from the edge to the inside of the wafer, entering an initial processing station, and finishing the cutting surface by adopting an envelope scanning method. FIG. 2 is a schematic diagram of ultrafast laser planarization of a facet of a thin-slab crystal device in accordance with the present invention.
The numerical value of M is determined by the material of the processed workpiece and the processing requirement, M is the distance between a laser spot and a cutting edge, and theoretically, the smaller the numerical value of M is, the smaller the roughness after processing is, and the better the surface quality is. In the case of a defined machining requirement, M is also a constant value and not a range.
The thin crystal is made of quartz, lithium niobate, silicon carbide, sapphire and other thin crystal materials. The thickness of the thin-sheet crystal is not more than 0.8 mm.
The ultrafast laser includes a picosecond laser and a femtosecond laser. The picosecond laser is a laser with a pulse width of picosecond, i.e. 1 picosecond is 10-12Second; the femtosecond laser is a laser with a femtosecond pulse width, i.e. 1 femtosecond is 10-15And second. The ultrafast laser can obtain laser energy with high oscillation density during laser oscillation, and debris accumulation is rarely generated during the processing.
The focal length range of the long-focus lens is 180-650 mu m. The specific parameters are comprehensively determined by the type of the processing material and the thickness and the initial appearance of the processing material.
The unit pulse energy range of the ultrafast laser is 40 muJ to 100 muJ, the repetition frequency range is 10KHZ to 20KHZ, and the scanning speed is 250 muM/s. After the scanning of all the crystal sections is completed, the height of the laser focal plane is reduced by 30-60 μm (Z-), and the next scanning cycle is started, wherein the total cycle number of the side section finishing is about 3 times. The specific parameters are comprehensively determined by the type of the processing material and the thickness and the initial appearance of the processing material.
The envelope method comprises two conditions, wherein one condition is that if the laser equipment allows the scanning direction and the laser beam direction to do circular interpolation motion, the method leads the scanning direction to do circular interpolation motion by matching with the laser beam direction, and simultaneously superposes the linear motion of the scanning direction, namely, the circular arc track envelope method; the other is the situation that the laser equipment cannot realize circular interpolation motion of the scanning direction and the laser beam direction, and at the moment, the linear motion of the scanning direction is selected to be matched with the up-and-down reciprocating motion of the laser direction, namely, a sawtooth-shaped track enveloping method. FIG. 3 is a schematic diagram of a circular arc trajectory envelope method; FIG. 4 is a schematic diagram of a sawtooth trajectory envelope method.
In conclusion, the invention applies ultrafast laser to carry out leveling processing on the cutting surface of the thin crystal device. The method changes the limitation of polishing processing for flattening the cut surface of the conventional thin crystal device, effectively solves the problem that the surface roughness can only be ensured but the planeness and the verticality cannot be ensured by single polishing processing, and can simultaneously take the three indexes of the surface roughness, the planeness and the verticality into consideration.
Example 1:
the invention discloses an ultrafast laser leveling method for a cut surface of a thin crystal device. Which comprises the following steps:
step 1: the thin wafer 1 is fixed on a worktable 5 through a magnet 3 and a sizing block 4, the B surface is used as a positioning reference surface, and the worktable 5 is an X-Y two-dimensional motion worktable. FIG. 5 is a schematic view of a tool for an ultrafast laser leveling method for a slice crystal device cut surface according to the present invention.
Step 2: and cutting the wafer 1 by using the ultrafast laser 2, turning the cut wafer by 180 degrees, namely selecting the surface A as a positioning reference surface, and fixing and clamping.
And step 3: changing the laser lens into a long-focus lens, adjusting the relative position of the wafer and the laser beam, enabling the upper surface of the laser filament to be positioned about N micrometers below the surface B by observing the laser filament, externally cutting the to-be-cut surface of the wafer to the laser filament, and then cutting into M micrometers.
And 4, step 4: selecting a proper incision amount according to the processing requirement, adjusting the laser pulse energy, the scanning times and the scanning speed, externally cutting the protruded edge of the side surface of the wafer to a laser filament, and incising M micrometers from the edge to the inside of the wafer; the scanning process is mainly completed by processing the cutting surface by the envelope formed by the shape of the laser beam and the scanning path, reducing the focal plane position by 15-30 μm (adjusted according to different thicknesses of wafers) after each scanning, and then performing the next scanning cycle, wherein the fine trimming process can be completed by 3 cycles generally.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (8)
1. An ultrafast laser leveling method of a cut surface of a thin crystal device, comprising:
the method comprises the following steps of placing a thin crystal on a workbench, positioning and clamping, and cutting the thin crystal by using ultrafast laser;
after cutting, replacing a long-focus laser lens, and turning the cut wafer by 180 degrees;
adjusting the relative position of the ultrafast laser and the cut processed wafer, and observing the laser optical fiber through a displacement sensor to enable the upper surface of the laser optical fiber to be located N micrometers below a to-be-cut surface;
and (3) externally cutting the light spot projected by the laser on the surface to be cut with the cutting edge, cutting M microns from the edge to the inside of the wafer, entering an initial processing station, and finishing the cutting surface by adopting an envelope scanning method.
2. The dimension reduction method based on adaptive maximum linear neighborhood selection according to claim 1, wherein the thin crystal is quartz, lithium niobate, silicon carbide or sapphire thin.
3. The dimension reduction method based on adaptive maximum linear neighborhood selection according to claim 1, wherein the thickness of the thin slice crystal is not more than 0.8 mm.
4. The dimension reduction method based on adaptive maximum linear neighborhood selection according to claim 1, wherein the ultrafast laser comprises a picosecond laser and a femtosecond laser.
5. The dimension reduction method based on adaptive maximum linear neighborhood selection according to claim 1, wherein the focal length of the long-focus lens is in a range of 180 μm to 650 μm.
6. The dimension reduction method based on adaptive maximum linear neighborhood selection according to claim 1, wherein the unit pulse energy of the ultrafast laser is in a range of 40 μ J to 100 μ J.
7. The dimension reduction method based on adaptive maximum linear neighborhood selection according to claim 1, wherein the repetition frequency of the ultrafast laser is in the range of 10KHZ to 20 KHZ.
8. The dimension reduction method based on adaptive maximum linear neighborhood selection according to claim 1, wherein the scanning speed of the ultrafast laser is 250 μm/s.
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| CN202011200895.5A CN112404745A (en) | 2020-11-02 | 2020-11-02 | Ultrafast laser leveling method for cut surface of thin crystal device |
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