CN1481290A - 半导体材料的激光加工 - Google Patents
半导体材料的激光加工 Download PDFInfo
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Abstract
半导体是通过沿切割线引导高功率的绿色激光束,然后是UV激光束而切割的。第一光束以较粗糙的边缘和较高的材料去除速度进行切割,而第二光束以较低的材料去除量在所需精加工的边缘处完成切割。
Description
发明领域
本发明涉及在加工半导体材料或其他具有大致类似特性的材料过程中激光的使用。一个示例是为了从晶片上的集成电路阵列中分离出单个的集成电路而加工半导体。另一示例是为了在晶片或芯片上形成孔而用激光去除半导体材料。
现有技术
集成电路是利用半导体晶片作为原材料制造的。通过多重平版印刷步骤同时制造许多集成电路。集成电路制造过程的最后阶段之一是从形成芯片的晶片上分离出集成电路芯片。
目前,本工业使用装有金刚石刀片的高精度机械锯实现这一功能。虽然这是得到认可的技术,但使用这种锯存在着问题,因为它们导致产生碎屑、碎片和过度的热负荷。
虽然激光加工和激光在制造过程中的使用很普遍,但激光技术未呈现出已经成功地应用到半导体材料加工及其他类似应用上。其原因是激光切割工艺形成的边缘质量无法为精确应用所接受,比如集成电路制造。而且,其速度不足以适应高产量的生产工艺。并且,通常在切口正面产生热量,导致损害所制造的部件的电学功能。
US4958900描述了一种用于固定许多照亮工件的光纤的支架。
US5922224描述了一种用于将来自激光束的光线聚焦成两束的系统。当半导体晶片相对于光束移动时,光束沿相同的路径一个在另一个之后地传播。
本发明针对的是利用激光束加工半导体和类似材料的改进。所需的改进在于加工速度以及质量和精度方面。
发明内容
本发明提供了一种加工材料的方法,该方法包含使至少两束激光束对准材料进行加工操作的步骤,其特征在于所述激光束具有不同的光学特性。
在一个实施例中,所述光束具有不同的波长,且最初使用具有最长波长的光束,用于最高的材料去除速度,而随后使用具有较短波长的光束,完成加工操作。
在一个实施例中,具有最长波长的光束还具有最高的功率。
在另一实施例中,具有最长波长的光束包含具有基波或二次谐波激光频率的脉冲的脉冲序列,具有较短波长的光束包含具有三次、四次或五次谐波频率的脉冲的脉冲序列。
在一个实施例中,最高功率的光束由固态激光器产生,具有基波或二次谐波波长,其中基波频率在近红外光谱区内,二次谐波频率在可见光至近红外光谱区内,而较短波长的光束通过产生三次、四次或五次谐波频率而具有在紫外范围内的波长。
在另一实施例中,所述光束具有小于300纳秒的脉冲宽度。
在一个实施例中,所述光束分别具有大于1kHz的脉冲重复频率。
在一个实施例中,检流计和光学系统传递所述光束,且光学系统提供目标传输和光束尺寸。
在一个实施例中,所述材料是半导体材料晶片。
在一个实施例中,所述材料是包含半导体材料和电介质材料的复合材料。
在另一实施例中,最长波长的光束用于从一侧沿切割线去除大块的半导体,而较短波长的光束用于从另一侧沿切割线去除少量的电介质材料。
在一个实施例中,所述材料是半导体集成电路芯片,所述加工是在芯片周围进行的,以便将其从晶片或芯片阵列中分离出。
在一个实施例中,所述方法包含在切割之前利用机器视觉系统捕获所述材料的图像,并根据识别基准确定切割线。
根据另一方面,本发明提供了一种用于切割材料的设备,所述设备包含激光源装置、激光束引导装置和控制器,该控制器包含用于控制所述源装置和所述引导装置完成加工操作的装置,其特征在于所述激光源装置包含多个激光源,分别用于产生具有不同光学特性的激光束,且所述控制器包含用于控制上述方法中的加工操作的装置。
本发明的详细描述
附图简要说明
从下面例如仅参照附图给出的一些实施例的描述,可以更清楚地理解本发明。
图1(a)和1(b)是示出了使用两束激光束加工沟槽的图;
图2(a)是理想化的剖面图,示出了利用激光束加工的分段连续的深槽,图2(b)是示出了使用UV激光束完成对粗略切出的沟槽的优质精加工;
图3(a)、3(b)、3(c)和3(d)是示出了具有玻璃电介质覆层的半导体晶片的加工过程的一系列图。
实施例的描述
本发明提供了一种通过使用两束不同特性的独立激光束的诱导光烧蚀或其他基本的物理工艺、用于半导体晶片微加工的系统和方法。所述产生光束的激光系统,例如可以是二极管泵激式固态激光系统(Nd∶YV04@1064nm),发射一次、二次(532nm)、三次(335nm)、四次(266nm)或五次(213nm)谐波。1064nm的激光提供高速,532nm和355nm激光提供高速、中等质量,266nm和213nm的系统提供最佳的激光加工质量,但速度较低。取决于发射的确切波长,所述谐波波长也会发生轻微的变化(例如Nd∶YAG)。
可取的是,所述第一光束包含具有基波和二次谐波频率的脉冲的脉冲序列。所述第二光束包含具有三次、四次和五次谐波频率的脉冲的脉冲序列。
例如,所述第一光束可以是1064nm的基频或532nm的二次谐波频率的Nd∶YAG光束。所述第二光束可以是335nm的三次谐波频率的Nd∶YAG光束。
可取的是两束光的脉冲宽度都低于300ns,且脉冲重复频率大于1KHz。
所述系统含有两个独立的激光头,所述第一激光头使用红外或可见光波长的激光(例如绿色),所述第二激光头使用紫外波长的激光。所述系统包含精确的扫描和定位系统,包括高分辨率的x-y工作台和双轴检流计。高分辨率的双摄像头成像系统,用于精确定位所述晶片和检查所述微加工的部分。顶侧视觉系统用于向中央处理器提供位置信息。这种视觉系统在所述晶片处于“布线图向上”的位置时运行。所述顶侧视觉系统可以相对于激光束定位系统有固定的偏移,或者所述视觉系统可通过光束传递通道和聚焦透镜进行操作。材料搬运系统用于使晶片放置在x-y工作台的卡盘上,其中布线图向上或向下。底侧视觉系统用于提供布线图向下时的晶片的位置信息。所述系统还使用了搬运机器人,可以加载晶片,并且将晶片从一个激光头移动到另一激光头。
所述系统还包括吹气和碎片抽取系统。所述碎片抽取装置确保碎片不落在基准位置上,而可以得到精确的图像并对准。空气辅助装置确保碎片远离加工正面,并远离晶片顶侧,而进入碎片抽取系统。碎片抽取和空气辅助还提高了加工速度和质量。
所述系统可以在半导体晶片两侧高速地加工复杂的形状、盲孔和切口。
在一个实施例中,第一光束为1064nm或532nm的激光束,实现较高的加工速度和较高的去除速度,第二光束为355nm或266nm的光束,以获得最终的质量。
如上所述,所述激光加工系统包含两个激光头(激光头1和激光头2)和搬运机器人。激光头1控制平均功率大于6瓦的脉冲绿色激光源,而激光头2控制平均功率大于1.5瓦的、266nm的脉冲UV激光源。在两激光头1和激光头2中,利用为适当波长、激光功率、偏振和入射角的电介质设计的反射镜将光束传递到晶片上。使用望远镜设定输入到检流计处的光束直径。然后,光束射入双轴检流计中。连接于检流计的是远心的、F一θ(F-theta)平面场透镜,它将聚焦的光束均匀地传输到高达100mm乘100mm的面积上。为了加工晶片的整个面积,使用x-y工作台。该x-y工作台包括晶片支架。该x-y工作台可以得到控制而连接检流计视场外侧的区域,以便能加工穿过整个晶片的长通道。搬运机器人用于在x-y台上定位晶片,使布线图视需要面向上或下。这样可以在晶片两侧进行加工。晶片支架用于特定直径的晶片。然而,可以容易地更换而容纳具有更小或更大直径的晶片,包括200mm和300mm晶片。
所有控制系统、数据系统、运动系统、视觉系统和光束传递都是由处理器控制的。
首先晶片由激光头1加工。虽然激光头1的绿色激光在实现材料去除上有效,但切割边的总体质量低于利用UV激光系统可实现的质量。内部切割部分的质量和顶面的质量比利用UV可得到的质量差。然而,绿色激光具有高功率的性质,成本较低,且更稳定。在激光头1中的绿色激光已经从通道或沟槽去除了大部分材料之后,激光头2中的UV激光用于从沟槽内部和边缘去除材料,其效果是提高了净加工速度,且有优良的精加工质量。
示例1:利用双激光头系统中的两种激光波长加工700μm的硅晶片。
在该示例中,利用双激光头装置加工晶片,其中第一激光头,激光头1利用平均功率大于6瓦的脉冲绿色激光,而激光头2利用平均功率大于1.5瓦的266nm的脉冲UV激光源。
首先由激光头1加工晶片。虽然绿色激光在实现材料去除上有效,但切割边的总体质量低于利用UV激光系统可实现的质量。内部切割部分的质量和顶面的质量比利用UV可得到的质量差。在激光头1中的绿色激光已经从轮廓2去除了大部分材料之后,激光头2的UV激光用于从沟槽内部和边缘去除材料,形成轮廓3。
示例2:加工深槽(图2)
参照图2(a),如示例1所述,绿色和UV激光束用于加工具有宽度S和深度D的深槽50。
在第一阶段,绿色激光的第一遍扫描加工出粗糙的子沟槽51。随后该激光束的横向偏移扫描加工子沟槽52和53。所述横向偏移参数表示为“Ocentre”。
在第二阶段,绿色激光用于连续加工子沟槽54、55和56,以接近最大深度D(虽然是粗加工)。
然后,使用UV激光使子沟槽51至56组合形成的沟槽横向延伸。具体而言,在第四阶段,UV激光在所述顶部边缘周围扫描,加工出矩形体积57和58,直到约D/3的深度。最后,在第五阶段,UV光束用于加工体积61和62,以完成深度D和宽度S的沟槽50的精确、均匀的轮廓。
为清楚起见,图2(a)的图是理想的。参照图2(b),第二光束操作的方式示为用于硅晶片150中的沟槽,其中示出了第一激光产生的沟槽的粗糙度。硅晶片150的剖面在图2(b)中示出。最初,523nm、10W的激光用于高速加工硅基片。所需的沟槽深度和沟槽宽度S是通过针对给定激光切口宽度K而适当选择的平行扫描次数(n)及其之间的激光偏移(Ocentre)实现的。n和Ocentre的值可以根据基片材料的连续扫描变化,以便加工出所需的壁面轮廓151。随后,低功率的UV激光束在沟槽上扫描,以提高沟槽切口的质量,并减少利用更高功率的532nm激光152加工的过程中产生的碎屑和损坏。这种多束激光方案可以在硅晶片基底上以比仅使用UV激光达到的更高速度加工出较高质量的沟槽。对于10W、532nm的激光器来说,在硅中30μm深的沟槽的典型激光速度>60mm/s。精加工的速度取决于所采用的激光功率和波长,且这些参数可用于控制最后沟槽的精加工和纹理。
示例3:加工具有30μm的石英或熔凝石英覆层的700μm的硅晶片。
参照图3(a),示出了具有670微米的硅层141和30微米的石英或熔凝石英覆层142的700微米的晶片140,类似于被动和主动光学部件中使用的。532nm的9W的激光145用于从晶片底侧高速加工硅层,如图3(b)。随后,低功率的UV激光束146用于通过从晶片顶侧加工,而精确地去除石英或熔凝石英层142。这种加工方法适合于制造通道,也用于切块应用。
通过执行许多次横向偏移的UV激光扫描可以得到直壁切口,切割所述石英或熔凝石英覆层,并进入硅基底中,如图3(b)中所示,以形成分离出的单个芯片148。或者,在晶片顶侧由UV激光加工的沟槽S的宽度可以相对于从晶片底部由532nm的激光加工的沟槽的宽度增加,从而形成具有较窄覆层147的台阶特征。这在图3(d)中示出,其中两部分已经以这种方式切成小块。对于10W、532nm和1.5W、266nm的激光而言,通常直壁通道的加工速度在1.3至2.0mm/s的范围内,这取决于所需的精加工质量。
本发明不限于所述的实施例,而可以在结构和细节上变化。
Claims (14)
1.一种加工材料的方法,包含使至少两束激光束对准材料进行加工操作的步骤,其特征在于所述激光束具有不同的光学特性。
2.如权利要求1所述的方法,其特征在于所述光束具有不同的波长,且最初使用具有最长波长的光束,用于最高的材料去除速度,而随后使用具有较短波长的光束,完成加工操作。
3.如权利要求2所述的方法,其特征在于具有最长波长的光束还具有最高的功率。
4.如前述任一权利要求所述的方法,其特征在于具有最长波长的光束包含具有基波或二次谐波激光频率的脉冲的脉冲序列,具有较短波长的光束包含具有三次、四次或五次谐波频率的脉冲的脉冲序列。
5.如前述任一权利要求所述的方法,其特征在于最高功率的光束由固态激光器产生,具有基波或二次谐波波长,其中基波频率在近红外光谱区内,二次谐波频率在可见光至近红外光谱区内,而较短波长的光束通过产生三次、四次或五次谐波频率而具有在紫外范围内的波长。
6.如前述任一权利要求所述的方法,其特征在于所述光束具有小于300纳秒的脉冲宽度。
7.如前述任一权利要求所述的方法,其特征在于所述光束分别具有大于1kHz的脉冲重复频率。
8.如前述任一权利要求所述的方法,其特征在于检流计和光学系统传送所述光束,且光学系统提供目标传输和光束尺寸。
9.如前述任一权利要求所述的方法,其特征在于所述材料是半导体材料晶片。
10.如前述任一权利要求所述的方法,其特征在于所述材料是包含半导体材料和电介质材料的复合材料。
11.如权利要求10所述的方法,其特征在于最长波长的光束用于从一侧沿切割线去除大块的半导体,而较短波长的光束用于从另一侧沿切割线去除少量的电介质材料。
12.如前述任一权利要求所述的方法,其特征在于所述材料是半导体集成电路芯片,所述加工是在芯片周围进行的,以便将其从晶片或芯片阵列中分离出。
13.如前述任一权利要求所述的方法,其特征在于所述方法包含在切割之前利用机器视觉系统捕获所述材料的图像,并根据识别基准确定切割线。
14.一种用于切割材料的设备,所述设备包含激光源装置、激光束引导装置和控制器,该控制器包含用于控制所述源装置和所述引导装置完成加工操作的装置,其特征在于所述激光源装置包含多个激光源,分别用于产生具有不同光学特性的激光束,且所述控制器包含用于控制前述任一权利要求之一所述方法中的加工操作的装置。
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US20020086544A1 (en) | 2002-07-04 |
CN1257038C (zh) | 2006-05-24 |
JP2004515365A (ja) | 2004-05-27 |
DE60117036T2 (de) | 2006-08-03 |
WO2002047863A1 (en) | 2002-06-20 |
DE60117036D1 (de) | 2006-04-13 |
ATE316841T1 (de) | 2006-02-15 |
IE20010944A1 (en) | 2002-08-21 |
AU2002210860A1 (en) | 2002-06-24 |
EP1341638A1 (en) | 2003-09-10 |
EP1341638B1 (en) | 2006-02-01 |
US6841482B2 (en) | 2005-01-11 |
KR20030064808A (ko) | 2003-08-02 |
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