DE60108289D1 - Flüchtige Vorläuferverbindungen für die Abscheidung von Metallen und metallhaltigen Schichten - Google Patents

Flüchtige Vorläuferverbindungen für die Abscheidung von Metallen und metallhaltigen Schichten

Info

Publication number
DE60108289D1
DE60108289D1 DE60108289T DE60108289T DE60108289D1 DE 60108289 D1 DE60108289 D1 DE 60108289D1 DE 60108289 T DE60108289 T DE 60108289T DE 60108289 T DE60108289 T DE 60108289T DE 60108289 D1 DE60108289 D1 DE 60108289D1
Authority
DE
Germany
Prior art keywords
metal
metals
compounds
deposition
precursor compounds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60108289T
Other languages
English (en)
Other versions
DE60108289T2 (de
Inventor
Anthony Morman
Allen Roberts
Morteza Farnia
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Products and Chemicals Inc
Original Assignee
Air Products and Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc
Application granted granted Critical
Publication of DE60108289D1 publication Critical patent/DE60108289D1/de
Publication of DE60108289T2 publication Critical patent/DE60108289T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/005—Compounds containing elements of Groups 1 or 11 of the Periodic Table without C-Metal linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/02—Boron compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE60108289T 2000-04-03 2001-03-29 Flüchtige Vorläuferverbindungen für die Abscheidung von Metallen und metallhaltigen Schichten Expired - Lifetime DE60108289T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US19428500P 2000-04-03 2000-04-03
US194285P 2000-04-03
US09/791,409 US20020013487A1 (en) 2000-04-03 2001-02-22 Volatile precursors for deposition of metals and metal-containing films
US791409 2001-02-22

Publications (2)

Publication Number Publication Date
DE60108289D1 true DE60108289D1 (de) 2005-02-17
DE60108289T2 DE60108289T2 (de) 2005-06-02

Family

ID=26889867

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60108289T Expired - Lifetime DE60108289T2 (de) 2000-04-03 2001-03-29 Flüchtige Vorläuferverbindungen für die Abscheidung von Metallen und metallhaltigen Schichten

Country Status (8)

Country Link
US (2) US20020013487A1 (de)
EP (1) EP1142894B1 (de)
JP (1) JP3593051B2 (de)
KR (1) KR100436633B1 (de)
AT (1) ATE286902T1 (de)
DE (1) DE60108289T2 (de)
HK (1) HK1039944B (de)
TW (1) TW490502B (de)

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US7141278B2 (en) * 2000-06-08 2006-11-28 Asm Genitech Korea Ltd. Thin film forming method
US9139906B2 (en) * 2001-03-06 2015-09-22 Asm America, Inc. Doping with ALD technology
US7563715B2 (en) 2005-12-05 2009-07-21 Asm International N.V. Method of producing thin films
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US7037574B2 (en) * 2001-05-23 2006-05-02 Veeco Instruments, Inc. Atomic layer deposition for fabricating thin films
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Also Published As

Publication number Publication date
JP3593051B2 (ja) 2004-11-24
EP1142894A3 (de) 2003-04-23
EP1142894A2 (de) 2001-10-10
JP2002069088A (ja) 2002-03-08
DE60108289T2 (de) 2005-06-02
TW490502B (en) 2002-06-11
HK1039944B (zh) 2005-08-05
US6818783B2 (en) 2004-11-16
US20030135061A1 (en) 2003-07-17
KR20010095246A (ko) 2001-11-03
HK1039944A1 (en) 2002-05-17
EP1142894B1 (de) 2005-01-12
US20020013487A1 (en) 2002-01-31
KR100436633B1 (ko) 2004-06-22
ATE286902T1 (de) 2005-01-15

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