DE60043398D1 - Licht emittierende vorrichtung mit gruppe-iii-nitrid-verbindungshalbleiter und verfahren zu seiner herstellung - Google Patents

Licht emittierende vorrichtung mit gruppe-iii-nitrid-verbindungshalbleiter und verfahren zu seiner herstellung

Info

Publication number
DE60043398D1
DE60043398D1 DE60043398T DE60043398T DE60043398D1 DE 60043398 D1 DE60043398 D1 DE 60043398D1 DE 60043398 T DE60043398 T DE 60043398T DE 60043398 T DE60043398 T DE 60043398T DE 60043398 D1 DE60043398 D1 DE 60043398D1
Authority
DE
Germany
Prior art keywords
production
light
emitting device
group iii
iii nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60043398T
Other languages
English (en)
Inventor
Toshiya Uemura
Naohisa Nagasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Application granted granted Critical
Publication of DE60043398D1 publication Critical patent/DE60043398D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
DE60043398T 2000-05-23 2000-12-25 Licht emittierende vorrichtung mit gruppe-iii-nitrid-verbindungshalbleiter und verfahren zu seiner herstellung Expired - Lifetime DE60043398D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000150987A JP3864670B2 (ja) 2000-05-23 2000-05-23 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
PCT/JP2000/009220 WO2001091196A1 (fr) 2000-05-23 2000-12-25 Dispositif electroluminescent, semi-conducteur, a base de compose nitrure du groupe iii et son procede de production

Publications (1)

Publication Number Publication Date
DE60043398D1 true DE60043398D1 (de) 2010-01-07

Family

ID=18656614

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60043398T Expired - Lifetime DE60043398D1 (de) 2000-05-23 2000-12-25 Licht emittierende vorrichtung mit gruppe-iii-nitrid-verbindungshalbleiter und verfahren zu seiner herstellung

Country Status (9)

Country Link
US (1) US6861281B2 (de)
EP (1) EP1302989B1 (de)
JP (1) JP3864670B2 (de)
KR (1) KR100581321B1 (de)
CN (1) CN1206747C (de)
AU (1) AU2001224025A1 (de)
DE (1) DE60043398D1 (de)
TW (1) TW484241B (de)
WO (1) WO2001091196A1 (de)

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JP3896027B2 (ja) * 2002-04-17 2007-03-22 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
JP2004056088A (ja) 2002-05-31 2004-02-19 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2004014725A (ja) 2002-06-06 2004-01-15 Toyoda Gosei Co Ltd 半導体発光素子
KR100506730B1 (ko) * 2002-12-10 2005-08-08 삼성전기주식회사 발광 다이오드의 제조방법
DE10258193B4 (de) * 2002-12-12 2014-04-10 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von Leuchtdioden-Lichtquellen mit Lumineszenz-Konversionselement
US20050051781A1 (en) * 2003-09-08 2005-03-10 United Epitaxy Company, Ltd. Light emitting diode and method of making the same
JP2005244207A (ja) * 2004-01-30 2005-09-08 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子
JP4511262B2 (ja) * 2004-06-28 2010-07-28 京セラ株式会社 発光装置および画像記録装置
TWI299914B (en) * 2004-07-12 2008-08-11 Epistar Corp Light emitting diode with transparent electrically conductive layer and omni directional reflector
KR100568308B1 (ko) * 2004-08-10 2006-04-05 삼성전기주식회사 질화 갈륨계 반도체 발광소자 및 그 제조 방법
JP4897210B2 (ja) * 2004-11-18 2012-03-14 ラピスセミコンダクタ株式会社 半導体装置の構造及びその製造方法
JP4792802B2 (ja) * 2005-04-26 2011-10-12 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の表面処理方法
KR100667506B1 (ko) * 2005-08-02 2007-01-10 엘지전자 주식회사 금속 질화막을 갖는 발광 다이오드 및 그 제조방법
JP2007042857A (ja) * 2005-08-03 2007-02-15 Nichia Chem Ind Ltd 半導体発光素子と半導体素子の製造方法及び半導体発光装置
WO2007040295A1 (en) * 2005-10-04 2007-04-12 Seoul Opto Device Co., Ltd. (al, ga, in)n-based compound semiconductor and method of fabricating the same
JP4929924B2 (ja) * 2006-08-25 2012-05-09 サンケン電気株式会社 半導体発光素子、その製造方法、及び複合半導体装置
JP2009032971A (ja) * 2007-07-27 2009-02-12 Rohm Co Ltd 窒化物半導体素子の製造方法
US8217488B2 (en) * 2010-07-19 2012-07-10 Walsin Lihwa Corporation GaN light emitting diode and method for increasing light extraction on GaN light emitting diode via sapphire shaping
US8723201B2 (en) 2010-08-20 2014-05-13 Invenlux Corporation Light-emitting devices with substrate coated with optically denser material
US8436386B2 (en) * 2011-06-03 2013-05-07 Micron Technology, Inc. Solid state lighting devices having side reflectivity and associated methods of manufacture
KR20130117474A (ko) * 2012-04-18 2013-10-28 서울바이오시스 주식회사 배면에 패턴을 갖는 기판을 구비하는 발광다이오드 및 그의 제조방법
JP5974808B2 (ja) * 2012-10-17 2016-08-23 日亜化学工業株式会社 半導体発光素子
JP6176224B2 (ja) 2013-12-25 2017-08-09 日亜化学工業株式会社 半導体素子及びそれを備える半導体装置、並びに半導体素子の製造方法
DE102015119553A1 (de) * 2015-11-12 2017-05-18 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip, optoelektronisches Bauelement mit einem strahlungsemittierenden Halbleiterchip und Verfahren zur Beschichtung eines strahlungsemittierenden Halbleiterchips
JP6683003B2 (ja) 2016-05-11 2020-04-15 日亜化学工業株式会社 半導体素子、半導体装置及び半導体素子の製造方法
JP6720747B2 (ja) 2016-07-19 2020-07-08 日亜化学工業株式会社 半導体装置、基台及びそれらの製造方法
CN116325196A (zh) 2020-10-27 2023-06-23 三星电子株式会社 显示装置及其光源设备
CN117153878B (zh) * 2023-10-31 2024-02-20 江西兆驰半导体有限公司 Hemt外延结构及其制备方法、hemt器件

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JPS5534646U (de) * 1978-08-29 1980-03-06
JPS5534646A (en) 1978-08-30 1980-03-11 Sumitomo Metal Ind Ltd Heating method for furnace body in blowing-in of shaft furnace
JPS5833882A (ja) * 1981-08-21 1983-02-28 Mitsubishi Electric Corp 発光ダイオ−ドの製造方法
JPS60165779A (ja) * 1984-02-07 1985-08-28 Rohm Co Ltd 半導体レ−ザのチツプ製造方法
JPH01316459A (ja) * 1988-06-15 1989-12-21 Murata Mfg Co Ltd インラインスパッタリング装置およびその方法
JP2768988B2 (ja) * 1989-08-17 1998-06-25 三菱電機株式会社 端面部分コーティング方法
US4966862A (en) * 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
JPH05110206A (ja) * 1991-10-16 1993-04-30 Kubota Corp 半導体発光素子の製造方法及びその製造装置
JP2666228B2 (ja) 1991-10-30 1997-10-22 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
JP3326545B2 (ja) * 1994-09-30 2002-09-24 ローム株式会社 半導体発光素子
US5798536A (en) * 1996-01-25 1998-08-25 Rohm Co., Ltd. Light-emitting semiconductor device and method for manufacturing the same
JPH09205225A (ja) * 1996-03-25 1997-08-05 Rohm Co Ltd 発光半導体装置の製造方法
JP3769872B2 (ja) * 1997-05-06 2006-04-26 ソニー株式会社 半導体発光素子
US5915194A (en) * 1997-07-03 1999-06-22 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon
JPH11145519A (ja) * 1997-09-02 1999-05-28 Toshiba Corp 半導体発光素子、半導体発光装置および画像表示装置
JPH11126925A (ja) 1997-10-21 1999-05-11 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体発光素子
JPH11126924A (ja) 1997-10-21 1999-05-11 Toyoda Gosei Co Ltd 窒化ガリウム系化合物半導体素子の製造方法
US5952681A (en) * 1997-11-24 1999-09-14 Chen; Hsing Light emitting diode emitting red, green and blue light
JPH11261112A (ja) 1998-01-30 1999-09-24 Hewlett Packard Co <Hp> Ｌｅｄ組立品
US7205578B2 (en) * 2000-02-15 2007-04-17 Osram Gmbh Semiconductor component which emits radiation, and method for producing the same

Also Published As

Publication number Publication date
US20040087050A1 (en) 2004-05-06
US6861281B2 (en) 2005-03-01
AU2001224025A1 (en) 2001-12-03
JP2001332762A (ja) 2001-11-30
TW484241B (en) 2002-04-21
CN1206747C (zh) 2005-06-15
EP1302989B1 (de) 2009-11-25
KR100581321B1 (ko) 2006-05-22
EP1302989A4 (de) 2006-09-06
WO2001091196A1 (fr) 2001-11-29
CN1452791A (zh) 2003-10-29
KR20030001553A (ko) 2003-01-06
EP1302989A1 (de) 2003-04-16
JP3864670B2 (ja) 2007-01-10

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