DE60037558D1 - Verfahren zur herstellung eines halbleiterbauelements mit einem bipolartransistor und einem kondensator - Google Patents

Verfahren zur herstellung eines halbleiterbauelements mit einem bipolartransistor und einem kondensator

Info

Publication number
DE60037558D1
DE60037558D1 DE60037558T DE60037558T DE60037558D1 DE 60037558 D1 DE60037558 D1 DE 60037558D1 DE 60037558 T DE60037558 T DE 60037558T DE 60037558 T DE60037558 T DE 60037558T DE 60037558 D1 DE60037558 D1 DE 60037558D1
Authority
DE
Germany
Prior art keywords
condenser
producing
bipolar transistor
semiconductor component
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60037558T
Other languages
English (en)
Other versions
DE60037558T2 (de
Inventor
Ronald Dekker
Petrus H Magnee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE60037558D1 publication Critical patent/DE60037558D1/de
Publication of DE60037558T2 publication Critical patent/DE60037558T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE60037558T 1999-03-10 2000-02-18 Verfahren zur herstellung eines halbleiterbauelements mit einem bipolartransistor und einem kondensator Expired - Lifetime DE60037558T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP99200724 1999-03-10
EP99200724 1999-03-10
PCT/EP2000/001336 WO2000054319A1 (en) 1999-03-10 2000-02-18 Method of manufacturing a semiconductor device comprising a bipolar transistor and a capacitor

Publications (2)

Publication Number Publication Date
DE60037558D1 true DE60037558D1 (de) 2008-02-07
DE60037558T2 DE60037558T2 (de) 2009-01-08

Family

ID=8239969

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60037558T Expired - Lifetime DE60037558T2 (de) 1999-03-10 2000-02-18 Verfahren zur herstellung eines halbleiterbauelements mit einem bipolartransistor und einem kondensator

Country Status (7)

Country Link
US (1) US6551890B2 (de)
EP (1) EP1080490B1 (de)
JP (1) JP2002539609A (de)
KR (1) KR100682132B1 (de)
DE (1) DE60037558T2 (de)
TW (1) TW462075B (de)
WO (1) WO2000054319A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001217317A (ja) * 2000-02-07 2001-08-10 Sony Corp 半導体装置およびその製造方法
US6465870B2 (en) * 2001-01-25 2002-10-15 International Business Machines Corporation ESD robust silicon germanium transistor with emitter NP-block mask extrinsic base ballasting resistor with doped facet region
US6642607B2 (en) * 2001-02-05 2003-11-04 Matsushita Electric Industrial Co., Ltd. Semiconductor device
DE10200838A1 (de) * 2002-01-11 2003-07-31 Infineon Technologies Ag Verfahren zum Herstellen eines Kondensators
DE60325581D1 (de) * 2002-05-07 2009-02-12 Nxp Bv Herstellungsverfahren eines halbleiterfestwertspeichers
JP4857531B2 (ja) * 2004-07-08 2012-01-18 三菱電機株式会社 半導体装置
KR101460666B1 (ko) * 2008-04-08 2014-11-12 페어차일드코리아반도체 주식회사 반도체 소자 및 그 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01264253A (ja) * 1988-04-15 1989-10-20 Hitachi Ltd 半導体装置の製造方法
WO1992014262A1 (en) * 1991-02-01 1992-08-20 Sierra Semiconductor Corporation Semiconductor structure and method for making same
JP2762851B2 (ja) 1992-07-27 1998-06-04 日本電気株式会社 半導体装置の製造方法
US5943564A (en) * 1996-02-13 1999-08-24 National Semiconductor Corporation BiCMOS process for forming double-poly MOS and bipolar transistors with substantially identical device architectures
JP3695029B2 (ja) * 1996-08-14 2005-09-14 ソニー株式会社 半導体装置の製造方法
JP2953425B2 (ja) * 1997-03-31 1999-09-27 日本電気株式会社 半導体装置の製造方法
JP3104660B2 (ja) * 1997-11-21 2000-10-30 日本電気株式会社 半導体装置およびその製造方法
GB2337633B (en) * 1998-05-20 2003-04-02 Mitel Corp Method of forming capacitors in a semiconductor device

Also Published As

Publication number Publication date
KR20010043405A (ko) 2001-05-25
EP1080490A1 (de) 2001-03-07
US20020086488A1 (en) 2002-07-04
DE60037558T2 (de) 2009-01-08
JP2002539609A (ja) 2002-11-19
KR100682132B1 (ko) 2007-02-12
EP1080490B1 (de) 2007-12-26
US6551890B2 (en) 2003-04-22
WO2000054319A1 (en) 2000-09-14
TW462075B (en) 2001-11-01

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