DE60030467D1 - Ein Herstellungsverfahren von Entkopplungskondensatoren durch lithographische Dummy-Füllmuster - Google Patents
Ein Herstellungsverfahren von Entkopplungskondensatoren durch lithographische Dummy-FüllmusterInfo
- Publication number
- DE60030467D1 DE60030467D1 DE60030467T DE60030467T DE60030467D1 DE 60030467 D1 DE60030467 D1 DE 60030467D1 DE 60030467 T DE60030467 T DE 60030467T DE 60030467 T DE60030467 T DE 60030467T DE 60030467 D1 DE60030467 D1 DE 60030467D1
- Authority
- DE
- Germany
- Prior art keywords
- decoupling capacitors
- fill patterns
- dummy
- making
- lithographic fill
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US442890 | 1999-11-18 | ||
US09/442,890 US6232154B1 (en) | 1999-11-18 | 1999-11-18 | Optimized decoupling capacitor using lithographic dummy filler |
PCT/US2000/030404 WO2001037320A2 (en) | 1999-11-18 | 2000-11-02 | Optimized decoupling capacitor using lithographic dummy filler |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60030467D1 true DE60030467D1 (de) | 2006-10-12 |
DE60030467T2 DE60030467T2 (de) | 2007-05-03 |
Family
ID=23758553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60030467T Expired - Lifetime DE60030467T2 (de) | 1999-11-18 | 2000-11-02 | Ein Herstellungsverfahren von Entkopplungskondensatoren durch lithographische Dummy-Füllmuster |
Country Status (7)
Country | Link |
---|---|
US (2) | US6232154B1 (de) |
EP (1) | EP1232519B1 (de) |
JP (1) | JP4532803B2 (de) |
KR (1) | KR20020058019A (de) |
DE (1) | DE60030467T2 (de) |
TW (1) | TW473824B (de) |
WO (1) | WO2001037320A2 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6157067A (en) * | 1999-01-04 | 2000-12-05 | International Business Machines Corporation | Metal oxide semiconductor capacitor utilizing dummy lithographic patterns |
JP3611468B2 (ja) * | 1999-01-19 | 2005-01-19 | 松下電器産業株式会社 | パターン生成方法 |
JP2001125943A (ja) * | 1999-10-28 | 2001-05-11 | Nec Corp | 電源デカップリング回路の設計方法および設計支援システム |
JP3912949B2 (ja) * | 1999-12-28 | 2007-05-09 | 株式会社東芝 | フォトマスクの形成方法及び半導体装置の製造方法 |
US6452250B1 (en) | 2000-01-20 | 2002-09-17 | Advanced Micro Devices, Inc. | Stacked integrated circuit and capacitor structure containing via structures |
US6544837B1 (en) * | 2000-03-17 | 2003-04-08 | International Business Machines Corporation | SOI stacked DRAM logic |
US6898769B2 (en) * | 2002-10-10 | 2005-05-24 | International Business Machines Corporation | Decoupling capacitor sizing and placement |
US6807656B1 (en) * | 2003-04-03 | 2004-10-19 | Lsi Logic Corporation | Decoupling capacitance estimation and insertion flow for ASIC designs |
US7412683B2 (en) * | 2004-02-05 | 2008-08-12 | Matsushita Electric Industrial Co., Ltd. | Printed wiring board design method, program therefor, recording medium storing the program recorded therein, printed wiring board design device using them and CAD system |
KR100610022B1 (ko) * | 2005-01-18 | 2006-08-08 | 삼성전자주식회사 | 반도체 메모리 장치 |
US7689961B2 (en) * | 2005-08-10 | 2010-03-30 | International Business Machines Corporation | Increased power line noise immunity in IC using capacitor structure in fill area |
KR100675281B1 (ko) | 2005-09-05 | 2007-01-29 | 삼성전자주식회사 | 디커플링 캐패시터를 갖는 반도체 소자 및 그 제조방법 |
JP4899666B2 (ja) * | 2006-06-30 | 2012-03-21 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP2010067661A (ja) * | 2008-09-09 | 2010-03-25 | Nec Electronics Corp | 半導体装置 |
US20100065943A1 (en) * | 2008-09-17 | 2010-03-18 | Tien-Chang Chang | Method for including decoupling capacitors into semiconductor circuit having logic circuit therein and semiconductor circuit thereof |
US20100181847A1 (en) | 2009-01-22 | 2010-07-22 | Shen-Yu Huang | Method for reducing supply voltage drop in digital circuit block and related layout architecture |
JP5547934B2 (ja) * | 2009-09-09 | 2014-07-16 | ラピスセミコンダクタ株式会社 | 半導体装置、半導体装置の製造方法、及び半導体装置のレイアウト方法 |
CN110162913B (zh) * | 2019-05-30 | 2023-08-29 | 上海华虹宏力半导体制造有限公司 | 一种电容版图设计方法 |
CN112530933B (zh) | 2019-09-18 | 2024-03-22 | 铠侠股份有限公司 | 半导体装置 |
US11296093B2 (en) * | 2020-02-28 | 2022-04-05 | International Business Machines Corporation | Deep trench capacitor distribution |
TWI749645B (zh) * | 2020-07-17 | 2021-12-11 | 瑞昱半導體股份有限公司 | 半導體裝置以及金氧半電容器結構 |
US11688680B2 (en) | 2020-11-05 | 2023-06-27 | International Business Machines Corporation | MIM capacitor structures |
TWI755932B (zh) * | 2020-11-17 | 2022-02-21 | 華邦電子股份有限公司 | 用以量測重疊狀態的布局 |
KR102501412B1 (ko) * | 2021-10-06 | 2023-02-21 | 주식회사 키파운드리 | 프로그램 시간을 줄이기 위한 병렬 프로그램이 가능한 비휘발성 메모리 장치 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0828476B2 (ja) * | 1991-06-07 | 1996-03-21 | 富士通株式会社 | 半導体装置及びその製造方法 |
JP2827675B2 (ja) * | 1992-03-26 | 1998-11-25 | 日本電気株式会社 | 半導体記憶装置 |
SE470415B (sv) * | 1992-07-06 | 1994-02-14 | Ericsson Telefon Ab L M | Kondensator med hög kapacitans i ett integrerat funktionsblock eller en integrerad krets, förfarande för framställning av kondensatorn och användning av kondensatorn som en integrerad avkopplingskondensator |
KR0183739B1 (ko) * | 1995-09-19 | 1999-03-20 | 김광호 | 감결합 커패시터를 포함하는 반도체 장치 및 그 제조방법 |
US5885856A (en) * | 1996-08-21 | 1999-03-23 | Motorola, Inc. | Integrated circuit having a dummy structure and method of making |
DE19703611A1 (de) * | 1997-01-31 | 1998-08-06 | Siemens Ag | Anwendungsspezifisches integriertes Halbleiterprodukt mit Dummy-Elementen |
US5998846A (en) * | 1998-03-30 | 1999-12-07 | Vanguard International Semiconductor Corporation | Layout structure of multi-use coupling capacitors in reducing ground bounces and replacing faulty logic components |
US6157067A (en) * | 1999-01-04 | 2000-12-05 | International Business Machines Corporation | Metal oxide semiconductor capacitor utilizing dummy lithographic patterns |
-
1999
- 1999-11-18 US US09/442,890 patent/US6232154B1/en not_active Expired - Lifetime
-
2000
- 2000-04-28 US US09/562,220 patent/US6353248B1/en not_active Expired - Lifetime
- 2000-11-02 WO PCT/US2000/030404 patent/WO2001037320A2/en active IP Right Grant
- 2000-11-02 JP JP2001537776A patent/JP4532803B2/ja not_active Expired - Fee Related
- 2000-11-02 DE DE60030467T patent/DE60030467T2/de not_active Expired - Lifetime
- 2000-11-02 KR KR1020027006333A patent/KR20020058019A/ko active IP Right Grant
- 2000-11-02 EP EP00978366A patent/EP1232519B1/de not_active Expired - Lifetime
-
2001
- 2001-02-06 TW TW089124375A patent/TW473824B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1232519A2 (de) | 2002-08-21 |
US6232154B1 (en) | 2001-05-15 |
DE60030467T2 (de) | 2007-05-03 |
TW473824B (en) | 2002-01-21 |
JP4532803B2 (ja) | 2010-08-25 |
WO2001037320A3 (en) | 2001-12-06 |
KR20020058019A (ko) | 2002-07-12 |
WO2001037320A2 (en) | 2001-05-25 |
EP1232519B1 (de) | 2006-08-30 |
US6353248B1 (en) | 2002-03-05 |
JP2003514391A (ja) | 2003-04-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |