DE60016928D1 - Mikromechanisches herstellungsverfahren mit überblendeten masken - Google Patents

Mikromechanisches herstellungsverfahren mit überblendeten masken

Info

Publication number
DE60016928D1
DE60016928D1 DE60016928T DE60016928T DE60016928D1 DE 60016928 D1 DE60016928 D1 DE 60016928D1 DE 60016928 T DE60016928 T DE 60016928T DE 60016928 T DE60016928 T DE 60016928T DE 60016928 D1 DE60016928 D1 DE 60016928D1
Authority
DE
Germany
Prior art keywords
layer
masking material
masking
substrate
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60016928T
Other languages
German (de)
English (en)
Inventor
Lianzhong Yu
P Ried
D Goldberg
Duli Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ion Geophysical Corp
Original Assignee
Ion Geophysical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ion Geophysical Corp filed Critical Ion Geophysical Corp
Application granted granted Critical
Publication of DE60016928D1 publication Critical patent/DE60016928D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388—Etch mask forming
    • B81C1/00396—Mask characterised by its composition, e.g. multilayer masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • B81B2201/042—Micromirrors, not used as optical switches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0133—Wet etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0109—Bonding an individual cap on the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Electron Beam Exposure (AREA)
DE60016928T 1999-07-13 2000-07-13 Mikromechanisches herstellungsverfahren mit überblendeten masken Expired - Lifetime DE60016928D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/352,025 US6617098B1 (en) 1999-07-13 1999-07-13 Merged-mask micro-machining process
PCT/US2000/019127 WO2001004638A1 (en) 1999-07-13 2000-07-13 Merged-mask micro-machining process

Publications (1)

Publication Number Publication Date
DE60016928D1 true DE60016928D1 (de) 2005-01-27

Family

ID=23383482

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60016928T Expired - Lifetime DE60016928D1 (de) 1999-07-13 2000-07-13 Mikromechanisches herstellungsverfahren mit überblendeten masken

Country Status (9)

Country Link
US (1) US6617098B1 (enExample)
EP (3) EP1510864B1 (enExample)
JP (1) JP4851036B2 (enExample)
AT (1) ATE285583T1 (enExample)
AU (1) AU5932700A (enExample)
CA (2) CA2378725C (enExample)
DE (1) DE60016928D1 (enExample)
NO (3) NO329678B1 (enExample)
WO (1) WO2001004638A1 (enExample)

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US6315423B1 (en) * 1999-07-13 2001-11-13 Input/Output, Inc. Micro machined mirror
US6831765B2 (en) 2001-02-22 2004-12-14 Canon Kabushiki Kaisha Tiltable-body apparatus, and method of fabricating the same
DE60226262T2 (de) * 2001-10-19 2009-05-20 ION Geophysical Corp., Houston Digitale optische schaltvorrichtung und verfahren zu ihrer herstellung
EP1890181B1 (en) * 2001-10-19 2012-07-04 ION Geophysical Corporation Digital optical switch apparatus and process for manufacturing same
US7473644B2 (en) * 2004-07-01 2009-01-06 Micron Technology, Inc. Method for forming controlled geometry hardmasks including subresolution elements
US20080022771A1 (en) * 2006-07-28 2008-01-31 Alexander Wolter Micromechanical component
KR100868759B1 (ko) * 2007-01-25 2008-11-17 삼성전기주식회사 멤스 디바이스 및 이의 제조방법
JP4992576B2 (ja) * 2007-06-29 2012-08-08 富士通株式会社 マイクロ構造体製造方法およびマイクロ構造体
JP5775409B2 (ja) * 2011-09-29 2015-09-09 スタンレー電気株式会社 光スキャナの製造方法
DE102017215575A1 (de) * 2017-09-05 2019-03-07 Robert Bosch Gmbh Mikromechanische Vorrichtung

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US501893A (en) 1893-07-18 Eraser-holder
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US4791046A (en) * 1984-04-26 1988-12-13 Oki Electric Industry Co., Ltd. Process for forming mask patterns of positive type resist material with trimethylsilynitrile
US5329152A (en) * 1986-11-26 1994-07-12 Quick Technologies Ltd. Ablative etch resistant coating for laser personalization of integrated circuits
EP0286855A1 (de) * 1987-04-15 1988-10-19 BBC Brown Boveri AG Verfahren zum Aetzen von Vertiefungen in ein Siliziumsubstrat
US4863560A (en) 1988-08-22 1989-09-05 Xerox Corp Fabrication of silicon structures by single side, multiple step etching process
GB8910961D0 (en) * 1989-05-12 1989-06-28 Am Int Method of forming a pattern on a surface
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US4985374A (en) 1989-06-30 1991-01-15 Kabushiki Kaisha Toshiba Making a semiconductor device with ammonia treatment of photoresist
US5006202A (en) * 1990-06-04 1991-04-09 Xerox Corporation Fabricating method for silicon devices using a two step silicon etching process
US5131978A (en) 1990-06-07 1992-07-21 Xerox Corporation Low temperature, single side, multiple step etching process for fabrication of small and large structures
JPH0476959A (ja) * 1990-07-19 1992-03-11 Mitsubishi Electric Corp 半導体圧力センサの製造方法
US5091339A (en) 1990-07-23 1992-02-25 Microelectronics And Computer Technology Corporation Trenching techniques for forming vias and channels in multilayer electrical interconnects
US5295395A (en) * 1991-02-07 1994-03-22 Hocker G Benjamin Diaphragm-based-sensors
EP0570609B1 (de) * 1992-05-20 1999-11-03 International Business Machines Corporation Verfahren zum Erzeugen einer mehrstufigen Struktur in einem Substrat
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
DE4317623C2 (de) 1993-05-27 2003-08-21 Bosch Gmbh Robert Verfahren und Vorrichtung zum anisotropen Plasmaätzen von Substraten und dessen Verwendung
JP3213142B2 (ja) * 1993-11-02 2001-10-02 株式会社日立製作所 単結晶基板構造体の製造方法
US5667940A (en) * 1994-05-11 1997-09-16 United Microelectronics Corporation Process for creating high density integrated circuits utilizing double coating photoresist mask
US5589303A (en) * 1994-12-30 1996-12-31 Lucent Technologies Inc. Self-aligned opaque regions for attenuating phase-shifting masks
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US5753417A (en) 1996-06-10 1998-05-19 Sharp Microelectronics Technology, Inc. Multiple exposure masking system for forming multi-level resist profiles
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US5821169A (en) * 1996-08-05 1998-10-13 Sharp Microelectronics Technology,Inc. Hard mask method for transferring a multi-level photoresist pattern
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JP3011144B2 (ja) 1997-07-31 2000-02-21 日本電気株式会社 光スキャナとその駆動方法
JP3426498B2 (ja) * 1997-08-13 2003-07-14 株式会社日立ユニシアオートモティブ 圧力センサ
JPH1183886A (ja) * 1997-09-11 1999-03-26 Zexel Corp 静電容量型マイクロフローセンサ及び静電容量型マイクロフローセンサの製造方法並びに静電容量型マイクロフローセンサの外付け用固定具
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Also Published As

Publication number Publication date
JP4851036B2 (ja) 2012-01-11
CA2378725A1 (en) 2001-01-18
EP1510864B1 (en) 2010-11-03
JP2003504221A (ja) 2003-02-04
NO20100794L (no) 2002-03-12
EP2264468B1 (en) 2013-07-03
EP1196788A1 (en) 2002-04-17
EP2264468A2 (en) 2010-12-22
EP2264468A3 (en) 2012-02-08
CA2378725C (en) 2012-09-04
US6617098B1 (en) 2003-09-09
NO20092749L (no) 2002-03-12
EP1510864A3 (en) 2008-01-23
AU5932700A (en) 2001-01-30
EP1510864A2 (en) 2005-03-02
EP1196788B1 (en) 2004-12-22
NO20020139D0 (no) 2002-01-11
NO329678B1 (no) 2010-11-29
EP1196788A4 (en) 2003-01-15
CA2714788A1 (en) 2001-01-18
ATE285583T1 (de) 2005-01-15
NO20020139L (no) 2002-03-12
CA2714788C (en) 2013-11-12
WO2001004638A1 (en) 2001-01-18

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Legal Events

Date Code Title Description
8332 No legal effect for de