TW358951B - Platinum resistor temperature sensor structure and the manufacturing method - Google Patents

Platinum resistor temperature sensor structure and the manufacturing method

Info

Publication number
TW358951B
TW358951B TW086120030A TW86120030A TW358951B TW 358951 B TW358951 B TW 358951B TW 086120030 A TW086120030 A TW 086120030A TW 86120030 A TW86120030 A TW 86120030A TW 358951 B TW358951 B TW 358951B
Authority
TW
Taiwan
Prior art keywords
platinum
cavity
temperature sensor
substrate
resistor temperature
Prior art date
Application number
TW086120030A
Other languages
Chinese (zh)
Inventor
Feng-Ru Zhuang
Original Assignee
Opto Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Opto Tech Corp filed Critical Opto Tech Corp
Priority to TW086120030A priority Critical patent/TW358951B/en
Application granted granted Critical
Publication of TW358951B publication Critical patent/TW358951B/en

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  • Thermistors And Varistors (AREA)

Abstract

Manufacturing method of a platinum resistor temperature sensor structure, including the following steps: forming a mask on the substrate surface, of a pattern identical to the negative pattern of the platinum circuit in the platinum resistor temperature sensor; etching of the substrate for forming cavity on the substrate by means of the mask aperture, being the pattern of the cavity identical the pattern of the positive of the platinum circuit of the platinum resistor temperature sensor; removal of the mask; forming a dielectric layer on the substrate with etch and the surface of the cavity, being divided the dielectric layer into cavity sector of rough surface in the cavity and the smooth sector on the substrate surface; coating of a platinum member on the dielectric surface, being divided into the first platinum layer in the cavity sector of the cavity, and the second platinum layer in the smooth sector on the substrate surface; and surface polishing to the dielectric layer and the platinum substrate, with removal of the second platinum layer in the smooth area in the dielectric layer and the first platinum layer attached in the cavity in the cavity, for forming of the platinum circuit of platinum resistor temperature sensor.
TW086120030A 1997-12-29 1997-12-29 Platinum resistor temperature sensor structure and the manufacturing method TW358951B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086120030A TW358951B (en) 1997-12-29 1997-12-29 Platinum resistor temperature sensor structure and the manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086120030A TW358951B (en) 1997-12-29 1997-12-29 Platinum resistor temperature sensor structure and the manufacturing method

Publications (1)

Publication Number Publication Date
TW358951B true TW358951B (en) 1999-05-21

Family

ID=57940554

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086120030A TW358951B (en) 1997-12-29 1997-12-29 Platinum resistor temperature sensor structure and the manufacturing method

Country Status (1)

Country Link
TW (1) TW358951B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI472012B (en) * 2005-01-19 2015-02-01 Samsung Display Co Ltd Sensor, thin film transistor array panel, and display panel including the sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI472012B (en) * 2005-01-19 2015-02-01 Samsung Display Co Ltd Sensor, thin film transistor array panel, and display panel including the sensor

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees