NO20092749L - Fremgangsmate ved mikromaskinering av et substrat med sammensmeltede masker - Google Patents

Fremgangsmate ved mikromaskinering av et substrat med sammensmeltede masker

Info

Publication number
NO20092749L
NO20092749L NO20092749A NO20092749A NO20092749L NO 20092749 L NO20092749 L NO 20092749L NO 20092749 A NO20092749 A NO 20092749A NO 20092749 A NO20092749 A NO 20092749A NO 20092749 L NO20092749 L NO 20092749L
Authority
NO
Norway
Prior art keywords
layer
substrate
masking material
masking
etching
Prior art date
Application number
NO20092749A
Other languages
English (en)
Inventor
Howard D Goldberg
Duli Yu
Lianzhong Yu
Robert P Ried
Original Assignee
Input Output Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Publication of NO20092749L publication Critical patent/NO20092749L/no
Application filed by Input Output Inc filed Critical Input Output Inc

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388—Etch mask forming
    • B81C1/00396—Mask characterised by its composition, e.g. multilayer masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • B81B2201/042—Micromirrors, not used as optical switches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0133—Wet etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0109—Bonding an individual cap on the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Micromachines (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Pressure Sensors (AREA)
  • Electron Beam Exposure (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

Oppfinnelsen tilveiebringer en fremgangsmåte med sammensmeltede masker for fremstilling av mikromaskinerte innretninger generelt og især speilsammenstillinger for bruk i optiske skanningsinnretninger. Fremgangsmåten omfatter (a) tilveiebringelse av et substrat med en bestemt tykkelse, (b) påføring av et første maskeringslag på en første del av substratet og et andre maskeringslag på en andre del av substratet, idet det andre maskeringslag er minst like tykt som det første maskeringslag, (c) etsing av en del av det andre maskeringslag for å tilveiebringe en første eksponert del av substratet, (d) etsing av den første eksponerte del av substratet til en første dybde, (e) etsing av det andre maskeringslag for å tilveiebringe en andre, eksponert del av substratet, og (f) å etse samtidig den første eksponerte del av substratet til en andre dybde og den andre eksponerte del av substratet til en første dybde. Fremgangsmåten omfatter videre mønstring av det første maskeringslag før påføring av det andre maskeringslag for å tilveiebringe en andre del av substratet for etsning, og etsning av det første maskeringslag for å eksponere den andre del av substratet. Det første og andre maskeringslag påføres før etsning av substratet.
NO20092749A 1999-07-13 2009-07-22 Fremgangsmate ved mikromaskinering av et substrat med sammensmeltede masker NO20092749L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/352,025 US6617098B1 (en) 1999-07-13 1999-07-13 Merged-mask micro-machining process

Publications (1)

Publication Number Publication Date
NO20092749L true NO20092749L (no) 2002-03-12

Family

ID=23383482

Family Applications (3)

Application Number Title Priority Date Filing Date
NO20020139A NO329678B1 (no) 1999-07-13 2002-01-11 Fremgangsmate ved mikromaskinering av et substrat med sammensmeltede masker
NO20092749A NO20092749L (no) 1999-07-13 2009-07-22 Fremgangsmate ved mikromaskinering av et substrat med sammensmeltede masker
NO20100794A NO20100794L (no) 1999-07-13 2010-06-01 Fremgangsmate ved mikromaskinering av et substrat med sammensmeltede masker

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NO20020139A NO329678B1 (no) 1999-07-13 2002-01-11 Fremgangsmate ved mikromaskinering av et substrat med sammensmeltede masker

Family Applications After (1)

Application Number Title Priority Date Filing Date
NO20100794A NO20100794L (no) 1999-07-13 2010-06-01 Fremgangsmate ved mikromaskinering av et substrat med sammensmeltede masker

Country Status (9)

Country Link
US (1) US6617098B1 (no)
EP (3) EP2264468B1 (no)
JP (1) JP4851036B2 (no)
AT (1) ATE285583T1 (no)
AU (1) AU5932700A (no)
CA (2) CA2378725C (no)
DE (1) DE60016928D1 (no)
NO (3) NO329678B1 (no)
WO (1) WO2001004638A1 (no)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6315423B1 (en) * 1999-07-13 2001-11-13 Input/Output, Inc. Micro machined mirror
US6831765B2 (en) 2001-02-22 2004-12-14 Canon Kabushiki Kaisha Tiltable-body apparatus, and method of fabricating the same
EP1890181B1 (en) * 2001-10-19 2012-07-04 ION Geophysical Corporation Digital optical switch apparatus and process for manufacturing same
DE60226262T2 (de) * 2001-10-19 2009-05-20 ION Geophysical Corp., Houston Digitale optische schaltvorrichtung und verfahren zu ihrer herstellung
US7473644B2 (en) * 2004-07-01 2009-01-06 Micron Technology, Inc. Method for forming controlled geometry hardmasks including subresolution elements
US20080022771A1 (en) * 2006-07-28 2008-01-31 Alexander Wolter Micromechanical component
KR100868759B1 (ko) * 2007-01-25 2008-11-17 삼성전기주식회사 멤스 디바이스 및 이의 제조방법
JP4992576B2 (ja) * 2007-06-29 2012-08-08 富士通株式会社 マイクロ構造体製造方法およびマイクロ構造体
JP5775409B2 (ja) * 2011-09-29 2015-09-09 スタンレー電気株式会社 光スキャナの製造方法
DE102017215575A1 (de) * 2017-09-05 2019-03-07 Robert Bosch Gmbh Mikromechanische Vorrichtung

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US501893A (en) 1893-07-18 Eraser-holder
JPS5146879A (en) * 1974-10-18 1976-04-21 Matsushita Electric Ind Co Ltd Handotaisochino seizohoho
US4791046A (en) * 1984-04-26 1988-12-13 Oki Electric Industry Co., Ltd. Process for forming mask patterns of positive type resist material with trimethylsilynitrile
US5329152A (en) * 1986-11-26 1994-07-12 Quick Technologies Ltd. Ablative etch resistant coating for laser personalization of integrated circuits
EP0286855A1 (de) * 1987-04-15 1988-10-19 BBC Brown Boveri AG Verfahren zum Aetzen von Vertiefungen in ein Siliziumsubstrat
US4863560A (en) 1988-08-22 1989-09-05 Xerox Corp Fabrication of silicon structures by single side, multiple step etching process
GB8910961D0 (en) * 1989-05-12 1989-06-28 Am Int Method of forming a pattern on a surface
US4902377A (en) 1989-05-23 1990-02-20 Motorola, Inc. Sloped contact etch process
US4985374A (en) 1989-06-30 1991-01-15 Kabushiki Kaisha Toshiba Making a semiconductor device with ammonia treatment of photoresist
US5006202A (en) * 1990-06-04 1991-04-09 Xerox Corporation Fabricating method for silicon devices using a two step silicon etching process
US5131978A (en) * 1990-06-07 1992-07-21 Xerox Corporation Low temperature, single side, multiple step etching process for fabrication of small and large structures
JPH0476959A (ja) * 1990-07-19 1992-03-11 Mitsubishi Electric Corp 半導体圧力センサの製造方法
US5091339A (en) 1990-07-23 1992-02-25 Microelectronics And Computer Technology Corporation Trenching techniques for forming vias and channels in multilayer electrical interconnects
US5295395A (en) * 1991-02-07 1994-03-22 Hocker G Benjamin Diaphragm-based-sensors
DE59209764D1 (de) * 1992-05-20 1999-12-09 Ibm Verfahren zum Erzeugen einer mehrstufigen Struktur in einem Substrat
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
DE4317623C2 (de) 1993-05-27 2003-08-21 Bosch Gmbh Robert Verfahren und Vorrichtung zum anisotropen Plasmaätzen von Substraten und dessen Verwendung
JP3213142B2 (ja) * 1993-11-02 2001-10-02 株式会社日立製作所 単結晶基板構造体の製造方法
US5667940A (en) * 1994-05-11 1997-09-16 United Microelectronics Corporation Process for creating high density integrated circuits utilizing double coating photoresist mask
US5589303A (en) * 1994-12-30 1996-12-31 Lucent Technologies Inc. Self-aligned opaque regions for attenuating phase-shifting masks
EP0738599B1 (en) 1995-04-19 2002-10-16 Seiko Epson Corporation Ink Jet recording head and method of producing same
US5738757A (en) 1995-11-22 1998-04-14 Northrop Grumman Corporation Planar masking for multi-depth silicon etching
US5753417A (en) 1996-06-10 1998-05-19 Sharp Microelectronics Technology, Inc. Multiple exposure masking system for forming multi-level resist profiles
TW329539B (en) * 1996-07-05 1998-04-11 Mitsubishi Electric Corp The semiconductor device and its manufacturing method
US5821169A (en) * 1996-08-05 1998-10-13 Sharp Microelectronics Technology,Inc. Hard mask method for transferring a multi-level photoresist pattern
US5966617A (en) * 1996-09-20 1999-10-12 Kavlico Corporation Multiple local oxidation for surface micromachining
JPH1096744A (ja) * 1996-09-20 1998-04-14 Zexel Corp 容量型加速度センサの製造方法
US5914801A (en) 1996-09-27 1999-06-22 Mcnc Microelectromechanical devices including rotating plates and related methods
US5935734A (en) * 1997-03-03 1999-08-10 Micron Technology, Inc. Method for fabrication of and apparatus for use as a semiconductor photomask
US5911850A (en) * 1997-06-20 1999-06-15 International Business Machines Corporation Separation of diced wafers
JPH10269541A (ja) * 1997-03-28 1998-10-09 Citizen Watch Co Ltd 多段形状の形成方法と磁気ヘッドスライダの製造方法
JPH1145874A (ja) * 1997-07-25 1999-02-16 Toshiba Corp 半導体装置の製造方法
JP3011144B2 (ja) 1997-07-31 2000-02-21 日本電気株式会社 光スキャナとその駆動方法
JP3426498B2 (ja) * 1997-08-13 2003-07-14 株式会社日立ユニシアオートモティブ 圧力センサ
JPH1183886A (ja) * 1997-09-11 1999-03-26 Zexel Corp 静電容量型マイクロフローセンサ及び静電容量型マイクロフローセンサの製造方法並びに静電容量型マイクロフローセンサの外付け用固定具
US6007968A (en) * 1997-10-29 1999-12-28 International Business Machines Corporation Method for forming features using frequency doubling hybrid resist and device formed thereby
DE19803186C1 (de) * 1998-01-28 1999-06-17 Bosch Gmbh Robert Verfahren zur Herstellung strukturierter Wafer
US6110648A (en) * 1998-09-17 2000-08-29 Taiwan Semiconductor Manufacturing Company Method of enclosing copper conductor in a dual damascene process
US6200906B1 (en) * 1998-12-17 2001-03-13 Micron Technology, Inc. Stepped photoresist profile and opening formed using the profile
US6110624A (en) * 1999-01-04 2000-08-29 International Business Machines Corporation Multiple polarity mask exposure method
US6379869B1 (en) * 1999-03-31 2002-04-30 Infineon Technologies Ag Method of improving the etch resistance of chemically amplified photoresists by introducing silicon after patterning
US6444138B1 (en) * 1999-06-16 2002-09-03 James E. Moon Method of fabricating microelectromechanical and microfluidic devices
US6190809B1 (en) * 1999-10-20 2001-02-20 Taiwan Semiconductor Manufacturing Company Cost-effective method to fabricate a combined attenuated-alternating phase shift mask

Also Published As

Publication number Publication date
EP1510864B1 (en) 2010-11-03
EP1510864A3 (en) 2008-01-23
NO20020139L (no) 2002-03-12
DE60016928D1 (de) 2005-01-27
NO329678B1 (no) 2010-11-29
NO20020139D0 (no) 2002-01-11
US6617098B1 (en) 2003-09-09
EP1196788A1 (en) 2002-04-17
EP2264468B1 (en) 2013-07-03
EP1510864A2 (en) 2005-03-02
AU5932700A (en) 2001-01-30
CA2378725A1 (en) 2001-01-18
NO20100794L (no) 2002-03-12
EP1196788B1 (en) 2004-12-22
JP2003504221A (ja) 2003-02-04
CA2714788A1 (en) 2001-01-18
CA2378725C (en) 2012-09-04
ATE285583T1 (de) 2005-01-15
EP2264468A3 (en) 2012-02-08
CA2714788C (en) 2013-11-12
EP2264468A2 (en) 2010-12-22
JP4851036B2 (ja) 2012-01-11
WO2001004638A1 (en) 2001-01-18
EP1196788A4 (en) 2003-01-15

Similar Documents

Publication Publication Date Title
NO20100794L (no) Fremgangsmate ved mikromaskinering av et substrat med sammensmeltede masker
DE60127402D1 (de) Verfahren zur herstellung von substraten und dadurch hergestellte substrate
DE69508816D1 (de) Substrat für integrierte Bauelemente mit einer Dünnschicht und Herstellungsverfahren
WO2001059503A3 (en) Quantified fluorescence microscopy
EP0981168A3 (en) Semiconductor micro-optical components and method for producing them
DE69613882D1 (de) Herstellungsverfahren eines piezoelektrischen Schichtenelementes
DE60141903D1 (de) Transparentes substrat mit einer antireflexschicht
MXPA04003423A (es) Toalla para las manos de fibras multiples no rehumedecible y metodos para hacer la misma.
FR2821697B1 (fr) Procede de fabrication de couches minces sur un support specifique et une application
EP0806798A3 (en) Substrate support chuck having a contaminant containment layer and method of fabricating same
EP1152290A3 (en) Method for fabricating a photolithographic mask
NO20026107L (no) Fremgangsmåte for dannelse av en sjiktstruktur på et substrat
SG129216A1 (en) Alternating phase shift mask and method for fabricating the alignment monitor
KR950034585A (ko) 고온 금속층상의 절연층 형성방법
WO1998041980A3 (en) Improved magnetoresistive read sensor and method of fabricating a magnetoresistive read sensor
TW348229B (en) X-ray mask and its fabrication method
WO2002082130A3 (en) Optical grating structures and method for their manufacture
DK1077203T3 (da) Belagt substrat og fremgangsmåde til belægning af et substrat
FR2772301B1 (fr) Element en materiau composite a surface de glissement, et procede de fabrication
ATE215695T1 (de) Sensor- und/oder trennelement sowie verfahren zu dessen herstellung und anwendung desselben
KR960015703A (ko) 위상반전마스크 및 그 제조방법
KR20180131377A (ko) 마스크 제조방법 및 증착방법
KR950015617A (ko) 반도체소자의 미세패턴 제조방법
FI20012261A0 (fi) Paperi-tai kartonkikoneen komposiittirunkoinen vedenpoistoelin ja menetelmä paperi- tai kartonkikoneen komposiittirunkoisen vedenpoistoelimen valmistamiseksi
WO2002099532A1 (en) Method for making mask by using wasted mask

Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application