JP4851036B2 - 併合マスクの微細加工プロセス - Google Patents

併合マスクの微細加工プロセス Download PDF

Info

Publication number
JP4851036B2
JP4851036B2 JP2001509997A JP2001509997A JP4851036B2 JP 4851036 B2 JP4851036 B2 JP 4851036B2 JP 2001509997 A JP2001509997 A JP 2001509997A JP 2001509997 A JP2001509997 A JP 2001509997A JP 4851036 B2 JP4851036 B2 JP 4851036B2
Authority
JP
Japan
Prior art keywords
masking material
layer
exposed portion
substrate
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001509997A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003504221A (ja
JP2003504221A5 (enExample
Inventor
ユ，リアンゾーン
ピー． ライド，ロバート
ディー． ゴールドバーグ，ハワード，
ユ，デュリ
Original Assignee
アイオーエヌ ジオフィジカル コーポレーション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アイオーエヌ ジオフィジカル コーポレーション filed Critical アイオーエヌ ジオフィジカル コーポレーション
Publication of JP2003504221A publication Critical patent/JP2003504221A/ja
Publication of JP2003504221A5 publication Critical patent/JP2003504221A5/ja
Application granted granted Critical
Publication of JP4851036B2 publication Critical patent/JP4851036B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388—Etch mask forming
    • B81C1/00396—Mask characterised by its composition, e.g. multilayer masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • B81B2201/042—Micromirrors, not used as optical switches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0133—Wet etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0109—Bonding an individual cap on the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Electron Beam Exposure (AREA)
JP2001509997A 1999-07-13 2000-07-13 併合マスクの微細加工プロセス Expired - Fee Related JP4851036B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/352,025 US6617098B1 (en) 1999-07-13 1999-07-13 Merged-mask micro-machining process
US09/352,025 1999-07-13
PCT/US2000/019127 WO2001004638A1 (en) 1999-07-13 2000-07-13 Merged-mask micro-machining process

Publications (3)

Publication Number Publication Date
JP2003504221A JP2003504221A (ja) 2003-02-04
JP2003504221A5 JP2003504221A5 (enExample) 2007-08-02
JP4851036B2 true JP4851036B2 (ja) 2012-01-11

Family

ID=23383482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001509997A Expired - Fee Related JP4851036B2 (ja) 1999-07-13 2000-07-13 併合マスクの微細加工プロセス

Country Status (9)

Country Link
US (1) US6617098B1 (enExample)
EP (3) EP1510864B1 (enExample)
JP (1) JP4851036B2 (enExample)
AT (1) ATE285583T1 (enExample)
AU (1) AU5932700A (enExample)
CA (2) CA2378725C (enExample)
DE (1) DE60016928D1 (enExample)
NO (3) NO329678B1 (enExample)
WO (1) WO2001004638A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6315423B1 (en) * 1999-07-13 2001-11-13 Input/Output, Inc. Micro machined mirror
US6831765B2 (en) 2001-02-22 2004-12-14 Canon Kabushiki Kaisha Tiltable-body apparatus, and method of fabricating the same
DE60226262T2 (de) * 2001-10-19 2009-05-20 ION Geophysical Corp., Houston Digitale optische schaltvorrichtung und verfahren zu ihrer herstellung
EP1890181B1 (en) * 2001-10-19 2012-07-04 ION Geophysical Corporation Digital optical switch apparatus and process for manufacturing same
US7473644B2 (en) * 2004-07-01 2009-01-06 Micron Technology, Inc. Method for forming controlled geometry hardmasks including subresolution elements
US20080022771A1 (en) * 2006-07-28 2008-01-31 Alexander Wolter Micromechanical component
KR100868759B1 (ko) * 2007-01-25 2008-11-17 삼성전기주식회사 멤스 디바이스 및 이의 제조방법
JP4992576B2 (ja) * 2007-06-29 2012-08-08 富士通株式会社 マイクロ構造体製造方法およびマイクロ構造体
JP5775409B2 (ja) * 2011-09-29 2015-09-09 スタンレー電気株式会社 光スキャナの製造方法
DE102017215575A1 (de) * 2017-09-05 2019-03-07 Robert Bosch Gmbh Mikromechanische Vorrichtung

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5146879A (en) * 1974-10-18 1976-04-21 Matsushita Electric Industrial Co Ltd Handotaisochino seizohoho
JPS63280424A (ja) * 1987-04-15 1988-11-17 ベー・ベー・ツエー・ブラウン・ボヴエリ・アクチエンゲゼルシヤフト シリコン基板中に凹みをエツチングする方法
JPH0476959A (ja) * 1990-07-19 1992-03-11 Mitsubishi Electric Corp 半導体圧力センサの製造方法
JPH04261862A (ja) * 1990-06-04 1992-09-17 Xerox Corp シリコンウェーハから精密エッチング３次元装置を製作する方法
JPH0626961A (ja) * 1991-02-07 1994-02-04 Honeywell Inc ダイアフラム利用センサを製造する方法及びそれを使用して構成される装置
JPH071737A (ja) * 1990-06-07 1995-01-06 Xerox Corp 大型および小型の構造体を製作するための低温、片面、複数ステップによるエッチング工程
JPH07128363A (ja) * 1993-11-02 1995-05-19 Hitachi Ltd 単結晶基板構造体およびその製造方法
JPH1096744A (ja) * 1996-09-20 1998-04-14 Zexel Corp 容量型加速度センサの製造方法
US5738757A (en) * 1995-11-22 1998-04-14 Northrop Grumman Corporation Planar masking for multi-depth silicon etching
JPH10269541A (ja) * 1997-03-28 1998-10-09 Citizen Watch Co Ltd 多段形状の形成方法と磁気ヘッドスライダの製造方法
JPH1145874A (ja) * 1997-07-25 1999-02-16 Toshiba Corp 半導体装置の製造方法
JPH1183886A (ja) * 1997-09-11 1999-03-26 Zexel Corp 静電容量型マイクロフローセンサ及び静電容量型マイクロフローセンサの製造方法並びに静電容量型マイクロフローセンサの外付け用固定具
JPH11118642A (ja) * 1997-08-13 1999-04-30 Unisia Jecs Corp 圧力センサ
JP2003502161A (ja) * 1999-06-16 2003-01-21 キオニックス インコーポレーテッド マイクロエレクトロメカニカルおよびマイクロフルイディック装置を製造する改良された方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US501893A (en) 1893-07-18 Eraser-holder
US4791046A (en) * 1984-04-26 1988-12-13 Oki Electric Industry Co., Ltd. Process for forming mask patterns of positive type resist material with trimethylsilynitrile
US5329152A (en) * 1986-11-26 1994-07-12 Quick Technologies Ltd. Ablative etch resistant coating for laser personalization of integrated circuits
US4863560A (en) 1988-08-22 1989-09-05 Xerox Corp Fabrication of silicon structures by single side, multiple step etching process
GB8910961D0 (en) * 1989-05-12 1989-06-28 Am Int Method of forming a pattern on a surface
US4902377A (en) 1989-05-23 1990-02-20 Motorola, Inc. Sloped contact etch process
US4985374A (en) 1989-06-30 1991-01-15 Kabushiki Kaisha Toshiba Making a semiconductor device with ammonia treatment of photoresist
US5091339A (en) 1990-07-23 1992-02-25 Microelectronics And Computer Technology Corporation Trenching techniques for forming vias and channels in multilayer electrical interconnects
EP0570609B1 (de) * 1992-05-20 1999-11-03 International Business Machines Corporation Verfahren zum Erzeugen einer mehrstufigen Struktur in einem Substrat
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
DE4317623C2 (de) 1993-05-27 2003-08-21 Bosch Gmbh Robert Verfahren und Vorrichtung zum anisotropen Plasmaätzen von Substraten und dessen Verwendung
US5667940A (en) * 1994-05-11 1997-09-16 United Microelectronics Corporation Process for creating high density integrated circuits utilizing double coating photoresist mask
US5589303A (en) * 1994-12-30 1996-12-31 Lucent Technologies Inc. Self-aligned opaque regions for attenuating phase-shifting masks
EP0974466B1 (en) 1995-04-19 2003-03-26 Seiko Epson Corporation Ink jet recording head and method of producing same
US5753417A (en) 1996-06-10 1998-05-19 Sharp Microelectronics Technology, Inc. Multiple exposure masking system for forming multi-level resist profiles
TW329539B (en) * 1996-07-05 1998-04-11 Mitsubishi Electric Corp The semiconductor device and its manufacturing method
US5821169A (en) * 1996-08-05 1998-10-13 Sharp Microelectronics Technology,Inc. Hard mask method for transferring a multi-level photoresist pattern
US5966617A (en) * 1996-09-20 1999-10-12 Kavlico Corporation Multiple local oxidation for surface micromachining
US5914801A (en) 1996-09-27 1999-06-22 Mcnc Microelectromechanical devices including rotating plates and related methods
US5935734A (en) * 1997-03-03 1999-08-10 Micron Technology, Inc. Method for fabrication of and apparatus for use as a semiconductor photomask
US5911850A (en) * 1997-06-20 1999-06-15 International Business Machines Corporation Separation of diced wafers
JP3011144B2 (ja) 1997-07-31 2000-02-21 日本電気株式会社 光スキャナとその駆動方法
US6007968A (en) * 1997-10-29 1999-12-28 International Business Machines Corporation Method for forming features using frequency doubling hybrid resist and device formed thereby
DE19803186C1 (de) * 1998-01-28 1999-06-17 Bosch Gmbh Robert Verfahren zur Herstellung strukturierter Wafer
US6110648A (en) * 1998-09-17 2000-08-29 Taiwan Semiconductor Manufacturing Company Method of enclosing copper conductor in a dual damascene process
US6200906B1 (en) * 1998-12-17 2001-03-13 Micron Technology, Inc. Stepped photoresist profile and opening formed using the profile
US6110624A (en) * 1999-01-04 2000-08-29 International Business Machines Corporation Multiple polarity mask exposure method
US6379869B1 (en) * 1999-03-31 2002-04-30 Infineon Technologies Ag Method of improving the etch resistance of chemically amplified photoresists by introducing silicon after patterning
US6190809B1 (en) * 1999-10-20 2001-02-20 Taiwan Semiconductor Manufacturing Company Cost-effective method to fabricate a combined attenuated-alternating phase shift mask

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5146879A (en) * 1974-10-18 1976-04-21 Matsushita Electric Industrial Co Ltd Handotaisochino seizohoho
JPS63280424A (ja) * 1987-04-15 1988-11-17 ベー・ベー・ツエー・ブラウン・ボヴエリ・アクチエンゲゼルシヤフト シリコン基板中に凹みをエツチングする方法
JPH04261862A (ja) * 1990-06-04 1992-09-17 Xerox Corp シリコンウェーハから精密エッチング３次元装置を製作する方法
JPH071737A (ja) * 1990-06-07 1995-01-06 Xerox Corp 大型および小型の構造体を製作するための低温、片面、複数ステップによるエッチング工程
JPH0476959A (ja) * 1990-07-19 1992-03-11 Mitsubishi Electric Corp 半導体圧力センサの製造方法
JPH0626961A (ja) * 1991-02-07 1994-02-04 Honeywell Inc ダイアフラム利用センサを製造する方法及びそれを使用して構成される装置
JPH07128363A (ja) * 1993-11-02 1995-05-19 Hitachi Ltd 単結晶基板構造体およびその製造方法
US5738757A (en) * 1995-11-22 1998-04-14 Northrop Grumman Corporation Planar masking for multi-depth silicon etching
JPH1096744A (ja) * 1996-09-20 1998-04-14 Zexel Corp 容量型加速度センサの製造方法
JPH10269541A (ja) * 1997-03-28 1998-10-09 Citizen Watch Co Ltd 多段形状の形成方法と磁気ヘッドスライダの製造方法
JPH1145874A (ja) * 1997-07-25 1999-02-16 Toshiba Corp 半導体装置の製造方法
JPH11118642A (ja) * 1997-08-13 1999-04-30 Unisia Jecs Corp 圧力センサ
JPH1183886A (ja) * 1997-09-11 1999-03-26 Zexel Corp 静電容量型マイクロフローセンサ及び静電容量型マイクロフローセンサの製造方法並びに静電容量型マイクロフローセンサの外付け用固定具
JP2003502161A (ja) * 1999-06-16 2003-01-21 キオニックス インコーポレーテッド マイクロエレクトロメカニカルおよびマイクロフルイディック装置を製造する改良された方法

Also Published As

Publication number Publication date
CA2378725A1 (en) 2001-01-18
EP1510864B1 (en) 2010-11-03
JP2003504221A (ja) 2003-02-04
NO20100794L (no) 2002-03-12
EP2264468B1 (en) 2013-07-03
EP1196788A1 (en) 2002-04-17
EP2264468A2 (en) 2010-12-22
EP2264468A3 (en) 2012-02-08
CA2378725C (en) 2012-09-04
US6617098B1 (en) 2003-09-09
NO20092749L (no) 2002-03-12
EP1510864A3 (en) 2008-01-23
AU5932700A (en) 2001-01-30
EP1510864A2 (en) 2005-03-02
EP1196788B1 (en) 2004-12-22
NO20020139D0 (no) 2002-01-11
NO329678B1 (no) 2010-11-29
EP1196788A4 (en) 2003-01-15
CA2714788A1 (en) 2001-01-18
DE60016928D1 (de) 2005-01-27
ATE285583T1 (de) 2005-01-15
NO20020139L (no) 2002-03-12
CA2714788C (en) 2013-11-12
WO2001004638A1 (en) 2001-01-18

Similar Documents

Publication Publication Date Title
JP4851036B2 (ja) 併合マスクの微細加工プロセス
US6315423B1 (en) Micro machined mirror
US7629190B2 (en) Method for making a micromechanical device by using a sacrificial substrate
US7153716B2 (en) Method of manufacturing a micro-electrical-mechanical system
JP2020529125A (ja) 精密構造ガラス物品、集積回路パッケージ、光学素子、マイクロ流体素子、及びそれらの製造方法
JP5497476B2 (ja) 固体撮像装置の製造方法
EP1491854A1 (en) Inclination sensor, method of manufacturing inclination sensor, and method of measuring inclination
US20060088980A1 (en) Method of singulating electronic devices
CA2433738A1 (en) Method for microfabricating structures using silicon-on-insulator material
AU9818298A (en) Substrate processing apparatus, substrate support apparatus, substrate processing method, and substrate manufacturing method
TW200910435A (en) Method of wafer-level segmenting capable of protecting contact pad
US20240027488A1 (en) Inertial sensor and formation method therefor
US7737000B2 (en) Process for the collective fabrication of microstructures consisting of superposed elements
TW201118035A (en) Fabricating method of single chip for intergating with field-effect transistor and MEMS
DK2879988T3 (en) HOUSING (WIRING)
JP3191770B2 (ja) 半導体加速度センサ及びその製造方法
Alvi MEMS pressure sensors: fabrication and process optimization
JP2010194622A (ja) Ｍｅｍｓの製造方法
JP2007015101A (ja) 隠れヒンジｍｅｍｓデバイス
CN209721578U (zh) 一种压阻式双轴运动传感器
CN110002395B (zh) 一种压阻式双轴运动传感器及其制作方法
WO2009026232A1 (en) Apparatus for performing confocal endoscopy
EP3623341A1 (en) A process for manufacturing a microelectromechanical device with a mobile structure, in particular a micromirror
EP4603446A1 (en) Glass cover manufacturing using a single-crystal silicon mold
US20240051817A1 (en) Microelectromechanical button device and corresponding waterproof user interface element

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070615

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070615

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100712

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20101012

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20101019

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110112

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20110112

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110216

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110516

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110523

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110816

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110928

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20111020

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141028

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees