NO329678B1 - Fremgangsmate ved mikromaskinering av et substrat med sammensmeltede masker - Google Patents
Fremgangsmate ved mikromaskinering av et substrat med sammensmeltede masker Download PDFInfo
- Publication number
- NO329678B1 NO329678B1 NO20020139A NO20020139A NO329678B1 NO 329678 B1 NO329678 B1 NO 329678B1 NO 20020139 A NO20020139 A NO 20020139A NO 20020139 A NO20020139 A NO 20020139A NO 329678 B1 NO329678 B1 NO 329678B1
- Authority
- NO
- Norway
- Prior art keywords
- layer
- plate
- silicon
- etching
- section
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 245
- 239000000758 substrate Substances 0.000 title claims abstract description 158
- 230000008569 process Effects 0.000 title abstract description 34
- 238000005459 micromachining Methods 0.000 title description 141
- 238000005530 etching Methods 0.000 claims abstract description 438
- 230000000873 masking effect Effects 0.000 claims abstract description 214
- 238000000059 patterning Methods 0.000 claims abstract description 214
- 239000000463 material Substances 0.000 claims abstract description 206
- 238000004519 manufacturing process Methods 0.000 claims abstract description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 1070
- 239000000377 silicon dioxide Substances 0.000 claims description 535
- 235000012239 silicon dioxide Nutrition 0.000 claims description 535
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 392
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 392
- 229920002120 photoresistant polymer Polymers 0.000 claims description 182
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 62
- 238000001312 dry etching Methods 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 238000001039 wet etching Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000003628 erosive effect Effects 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 13
- 238000000429 assembly Methods 0.000 abstract 1
- 230000000712 assembly Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 1180
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 699
- 229910052710 silicon Inorganic materials 0.000 description 699
- 239000010703 silicon Substances 0.000 description 698
- 229920001296 polysiloxane Polymers 0.000 description 581
- 235000012431 wafers Nutrition 0.000 description 319
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 92
- 239000010931 gold Substances 0.000 description 41
- 229910052737 gold Inorganic materials 0.000 description 41
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 38
- 238000003754 machining Methods 0.000 description 29
- 238000012545 processing Methods 0.000 description 29
- 230000035939 shock Effects 0.000 description 27
- 238000010276 construction Methods 0.000 description 19
- 238000000206 photolithography Methods 0.000 description 16
- 239000000919 ceramic Substances 0.000 description 14
- 238000011282 treatment Methods 0.000 description 14
- 239000004593 Epoxy Substances 0.000 description 10
- 239000011241 protective layer Substances 0.000 description 9
- 230000008093 supporting effect Effects 0.000 description 9
- 238000003466 welding Methods 0.000 description 9
- 238000001035 drying Methods 0.000 description 8
- 230000002950 deficient Effects 0.000 description 7
- 230000001976 improved effect Effects 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 238000003698 laser cutting Methods 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000013519 translation Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000001154 acute effect Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000007514 turning Methods 0.000 description 2
- 241001125671 Eretmochelys imbricata Species 0.000 description 1
- 206010034701 Peroneal nerve palsy Diseases 0.000 description 1
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
- B81C1/00396—Mask characterised by its composition, e.g. multilayer masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/042—Micromirrors, not used as optical switches
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0133—Wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0109—Bonding an individual cap on the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
- Mechanical Optical Scanning Systems (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/352,025 US6617098B1 (en) | 1999-07-13 | 1999-07-13 | Merged-mask micro-machining process |
| PCT/US2000/019127 WO2001004638A1 (en) | 1999-07-13 | 2000-07-13 | Merged-mask micro-machining process |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO20020139D0 NO20020139D0 (no) | 2002-01-11 |
| NO20020139L NO20020139L (no) | 2002-03-12 |
| NO329678B1 true NO329678B1 (no) | 2010-11-29 |
Family
ID=23383482
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20020139A NO329678B1 (no) | 1999-07-13 | 2002-01-11 | Fremgangsmate ved mikromaskinering av et substrat med sammensmeltede masker |
| NO20092749A NO20092749L (no) | 1999-07-13 | 2009-07-22 | Fremgangsmate ved mikromaskinering av et substrat med sammensmeltede masker |
| NO20100794A NO20100794L (no) | 1999-07-13 | 2010-06-01 | Fremgangsmate ved mikromaskinering av et substrat med sammensmeltede masker |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20092749A NO20092749L (no) | 1999-07-13 | 2009-07-22 | Fremgangsmate ved mikromaskinering av et substrat med sammensmeltede masker |
| NO20100794A NO20100794L (no) | 1999-07-13 | 2010-06-01 | Fremgangsmate ved mikromaskinering av et substrat med sammensmeltede masker |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6617098B1 (enExample) |
| EP (3) | EP1510864B1 (enExample) |
| JP (1) | JP4851036B2 (enExample) |
| AT (1) | ATE285583T1 (enExample) |
| AU (1) | AU5932700A (enExample) |
| CA (2) | CA2378725C (enExample) |
| DE (1) | DE60016928D1 (enExample) |
| NO (3) | NO329678B1 (enExample) |
| WO (1) | WO2001004638A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6315423B1 (en) * | 1999-07-13 | 2001-11-13 | Input/Output, Inc. | Micro machined mirror |
| US6831765B2 (en) | 2001-02-22 | 2004-12-14 | Canon Kabushiki Kaisha | Tiltable-body apparatus, and method of fabricating the same |
| DE60226262T2 (de) * | 2001-10-19 | 2009-05-20 | ION Geophysical Corp., Houston | Digitale optische schaltvorrichtung und verfahren zu ihrer herstellung |
| EP1890181B1 (en) * | 2001-10-19 | 2012-07-04 | ION Geophysical Corporation | Digital optical switch apparatus and process for manufacturing same |
| US7473644B2 (en) * | 2004-07-01 | 2009-01-06 | Micron Technology, Inc. | Method for forming controlled geometry hardmasks including subresolution elements |
| US20080022771A1 (en) * | 2006-07-28 | 2008-01-31 | Alexander Wolter | Micromechanical component |
| KR100868759B1 (ko) * | 2007-01-25 | 2008-11-17 | 삼성전기주식회사 | 멤스 디바이스 및 이의 제조방법 |
| JP4992576B2 (ja) * | 2007-06-29 | 2012-08-08 | 富士通株式会社 | マイクロ構造体製造方法およびマイクロ構造体 |
| JP5775409B2 (ja) * | 2011-09-29 | 2015-09-09 | スタンレー電気株式会社 | 光スキャナの製造方法 |
| DE102017215575A1 (de) * | 2017-09-05 | 2019-03-07 | Robert Bosch Gmbh | Mikromechanische Vorrichtung |
Family Cites Families (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US501893A (en) | 1893-07-18 | Eraser-holder | ||
| JPS5146879A (en) * | 1974-10-18 | 1976-04-21 | Matsushita Electric Industrial Co Ltd | Handotaisochino seizohoho |
| US4791046A (en) * | 1984-04-26 | 1988-12-13 | Oki Electric Industry Co., Ltd. | Process for forming mask patterns of positive type resist material with trimethylsilynitrile |
| US5329152A (en) * | 1986-11-26 | 1994-07-12 | Quick Technologies Ltd. | Ablative etch resistant coating for laser personalization of integrated circuits |
| EP0286855A1 (de) * | 1987-04-15 | 1988-10-19 | BBC Brown Boveri AG | Verfahren zum Aetzen von Vertiefungen in ein Siliziumsubstrat |
| US4863560A (en) | 1988-08-22 | 1989-09-05 | Xerox Corp | Fabrication of silicon structures by single side, multiple step etching process |
| GB8910961D0 (en) * | 1989-05-12 | 1989-06-28 | Am Int | Method of forming a pattern on a surface |
| US4902377A (en) | 1989-05-23 | 1990-02-20 | Motorola, Inc. | Sloped contact etch process |
| US4985374A (en) | 1989-06-30 | 1991-01-15 | Kabushiki Kaisha Toshiba | Making a semiconductor device with ammonia treatment of photoresist |
| US5006202A (en) * | 1990-06-04 | 1991-04-09 | Xerox Corporation | Fabricating method for silicon devices using a two step silicon etching process |
| US5131978A (en) | 1990-06-07 | 1992-07-21 | Xerox Corporation | Low temperature, single side, multiple step etching process for fabrication of small and large structures |
| JPH0476959A (ja) * | 1990-07-19 | 1992-03-11 | Mitsubishi Electric Corp | 半導体圧力センサの製造方法 |
| US5091339A (en) | 1990-07-23 | 1992-02-25 | Microelectronics And Computer Technology Corporation | Trenching techniques for forming vias and channels in multilayer electrical interconnects |
| US5295395A (en) * | 1991-02-07 | 1994-03-22 | Hocker G Benjamin | Diaphragm-based-sensors |
| EP0570609B1 (de) * | 1992-05-20 | 1999-11-03 | International Business Machines Corporation | Verfahren zum Erzeugen einer mehrstufigen Struktur in einem Substrat |
| DE4241045C1 (de) | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
| DE4317623C2 (de) | 1993-05-27 | 2003-08-21 | Bosch Gmbh Robert | Verfahren und Vorrichtung zum anisotropen Plasmaätzen von Substraten und dessen Verwendung |
| JP3213142B2 (ja) * | 1993-11-02 | 2001-10-02 | 株式会社日立製作所 | 単結晶基板構造体の製造方法 |
| US5667940A (en) * | 1994-05-11 | 1997-09-16 | United Microelectronics Corporation | Process for creating high density integrated circuits utilizing double coating photoresist mask |
| US5589303A (en) * | 1994-12-30 | 1996-12-31 | Lucent Technologies Inc. | Self-aligned opaque regions for attenuating phase-shifting masks |
| EP0974466B1 (en) | 1995-04-19 | 2003-03-26 | Seiko Epson Corporation | Ink jet recording head and method of producing same |
| US5738757A (en) | 1995-11-22 | 1998-04-14 | Northrop Grumman Corporation | Planar masking for multi-depth silicon etching |
| US5753417A (en) | 1996-06-10 | 1998-05-19 | Sharp Microelectronics Technology, Inc. | Multiple exposure masking system for forming multi-level resist profiles |
| TW329539B (en) * | 1996-07-05 | 1998-04-11 | Mitsubishi Electric Corp | The semiconductor device and its manufacturing method |
| US5821169A (en) * | 1996-08-05 | 1998-10-13 | Sharp Microelectronics Technology,Inc. | Hard mask method for transferring a multi-level photoresist pattern |
| JPH1096744A (ja) * | 1996-09-20 | 1998-04-14 | Zexel Corp | 容量型加速度センサの製造方法 |
| US5966617A (en) * | 1996-09-20 | 1999-10-12 | Kavlico Corporation | Multiple local oxidation for surface micromachining |
| US5914801A (en) | 1996-09-27 | 1999-06-22 | Mcnc | Microelectromechanical devices including rotating plates and related methods |
| US5935734A (en) * | 1997-03-03 | 1999-08-10 | Micron Technology, Inc. | Method for fabrication of and apparatus for use as a semiconductor photomask |
| US5911850A (en) * | 1997-06-20 | 1999-06-15 | International Business Machines Corporation | Separation of diced wafers |
| JPH10269541A (ja) * | 1997-03-28 | 1998-10-09 | Citizen Watch Co Ltd | 多段形状の形成方法と磁気ヘッドスライダの製造方法 |
| JPH1145874A (ja) * | 1997-07-25 | 1999-02-16 | Toshiba Corp | 半導体装置の製造方法 |
| JP3011144B2 (ja) | 1997-07-31 | 2000-02-21 | 日本電気株式会社 | 光スキャナとその駆動方法 |
| JP3426498B2 (ja) * | 1997-08-13 | 2003-07-14 | 株式会社日立ユニシアオートモティブ | 圧力センサ |
| JPH1183886A (ja) * | 1997-09-11 | 1999-03-26 | Zexel Corp | 静電容量型マイクロフローセンサ及び静電容量型マイクロフローセンサの製造方法並びに静電容量型マイクロフローセンサの外付け用固定具 |
| US6007968A (en) * | 1997-10-29 | 1999-12-28 | International Business Machines Corporation | Method for forming features using frequency doubling hybrid resist and device formed thereby |
| DE19803186C1 (de) * | 1998-01-28 | 1999-06-17 | Bosch Gmbh Robert | Verfahren zur Herstellung strukturierter Wafer |
| US6110648A (en) * | 1998-09-17 | 2000-08-29 | Taiwan Semiconductor Manufacturing Company | Method of enclosing copper conductor in a dual damascene process |
| US6200906B1 (en) * | 1998-12-17 | 2001-03-13 | Micron Technology, Inc. | Stepped photoresist profile and opening formed using the profile |
| US6110624A (en) * | 1999-01-04 | 2000-08-29 | International Business Machines Corporation | Multiple polarity mask exposure method |
| US6379869B1 (en) * | 1999-03-31 | 2002-04-30 | Infineon Technologies Ag | Method of improving the etch resistance of chemically amplified photoresists by introducing silicon after patterning |
| US6444138B1 (en) * | 1999-06-16 | 2002-09-03 | James E. Moon | Method of fabricating microelectromechanical and microfluidic devices |
| US6190809B1 (en) * | 1999-10-20 | 2001-02-20 | Taiwan Semiconductor Manufacturing Company | Cost-effective method to fabricate a combined attenuated-alternating phase shift mask |
-
1999
- 1999-07-13 US US09/352,025 patent/US6617098B1/en not_active Expired - Lifetime
-
2000
- 2000-07-13 EP EP04026039A patent/EP1510864B1/en not_active Expired - Lifetime
- 2000-07-13 JP JP2001509997A patent/JP4851036B2/ja not_active Expired - Fee Related
- 2000-07-13 CA CA2378725A patent/CA2378725C/en not_active Expired - Lifetime
- 2000-07-13 EP EP00945370A patent/EP1196788B1/en not_active Expired - Lifetime
- 2000-07-13 WO PCT/US2000/019127 patent/WO2001004638A1/en not_active Ceased
- 2000-07-13 EP EP10012678.8A patent/EP2264468B1/en not_active Expired - Lifetime
- 2000-07-13 AT AT00945370T patent/ATE285583T1/de not_active IP Right Cessation
- 2000-07-13 AU AU59327/00A patent/AU5932700A/en not_active Abandoned
- 2000-07-13 CA CA2714788A patent/CA2714788C/en not_active Expired - Lifetime
- 2000-07-13 DE DE60016928T patent/DE60016928D1/de not_active Expired - Lifetime
-
2002
- 2002-01-11 NO NO20020139A patent/NO329678B1/no not_active IP Right Cessation
-
2009
- 2009-07-22 NO NO20092749A patent/NO20092749L/no not_active Application Discontinuation
-
2010
- 2010-06-01 NO NO20100794A patent/NO20100794L/no not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JP4851036B2 (ja) | 2012-01-11 |
| CA2378725A1 (en) | 2001-01-18 |
| EP1510864B1 (en) | 2010-11-03 |
| JP2003504221A (ja) | 2003-02-04 |
| NO20100794L (no) | 2002-03-12 |
| EP2264468B1 (en) | 2013-07-03 |
| EP1196788A1 (en) | 2002-04-17 |
| EP2264468A2 (en) | 2010-12-22 |
| EP2264468A3 (en) | 2012-02-08 |
| CA2378725C (en) | 2012-09-04 |
| US6617098B1 (en) | 2003-09-09 |
| NO20092749L (no) | 2002-03-12 |
| EP1510864A3 (en) | 2008-01-23 |
| AU5932700A (en) | 2001-01-30 |
| EP1510864A2 (en) | 2005-03-02 |
| EP1196788B1 (en) | 2004-12-22 |
| NO20020139D0 (no) | 2002-01-11 |
| EP1196788A4 (en) | 2003-01-15 |
| CA2714788A1 (en) | 2001-01-18 |
| DE60016928D1 (de) | 2005-01-27 |
| ATE285583T1 (de) | 2005-01-15 |
| NO20020139L (no) | 2002-03-12 |
| CA2714788C (en) | 2013-11-12 |
| WO2001004638A1 (en) | 2001-01-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK1K | Patent expired |