DE4341173B4 - Vorrichtung und Verfahren zur Abscheidung unterschiedlicher Materialien auf einem Substrat - Google Patents
Vorrichtung und Verfahren zur Abscheidung unterschiedlicher Materialien auf einem Substrat Download PDFInfo
- Publication number
- DE4341173B4 DE4341173B4 DE4341173A DE4341173A DE4341173B4 DE 4341173 B4 DE4341173 B4 DE 4341173B4 DE 4341173 A DE4341173 A DE 4341173A DE 4341173 A DE4341173 A DE 4341173A DE 4341173 B4 DE4341173 B4 DE 4341173B4
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- region
- deposited
- different materials
- reactive substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 title claims abstract description 75
- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 238000000151 deposition Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims description 23
- 239000000126 substance Substances 0.000 claims abstract description 21
- 239000002245 particle Substances 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 17
- 239000013077 target material Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- -1 argon ions Chemical class 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 241000930965 Spartobacteria Species 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005591 charge neutralization Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0047—Activation or excitation of reactive gases outside the coating chamber
- C23C14/0052—Bombardment of substrates by reactive ion beams
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB929225270A GB9225270D0 (en) | 1992-12-03 | 1992-12-03 | Depositing different materials on a substrate |
| GB9225270 | 1992-12-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE4341173A1 DE4341173A1 (de) | 1994-06-09 |
| DE4341173B4 true DE4341173B4 (de) | 2004-03-04 |
Family
ID=10726049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4341173A Expired - Fee Related DE4341173B4 (de) | 1992-12-03 | 1993-12-02 | Vorrichtung und Verfahren zur Abscheidung unterschiedlicher Materialien auf einem Substrat |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5454919A (enrdf_load_stackoverflow) |
| JP (1) | JPH06220635A (enrdf_load_stackoverflow) |
| CA (1) | CA2110250C (enrdf_load_stackoverflow) |
| CH (1) | CH687464A5 (enrdf_load_stackoverflow) |
| DE (1) | DE4341173B4 (enrdf_load_stackoverflow) |
| FR (1) | FR2698884A1 (enrdf_load_stackoverflow) |
| GB (1) | GB9225270D0 (enrdf_load_stackoverflow) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19505258C2 (de) * | 1995-02-16 | 1998-08-06 | Samsung Electronics Co Ltd | Beschichtungsvorrichtung |
| JP2001519040A (ja) | 1995-08-30 | 2001-10-16 | ドイッチェ テレコム アーゲー | 三次元表面の構造化におけるコントラストを向上させる方法 |
| DE19630705A1 (de) | 1995-08-30 | 1997-03-20 | Deutsche Telekom Ag | Verfahren zur Herstellung von 3-dimensional strukturierten Polymerschichten für die integrierte Optik |
| DE19632563A1 (de) * | 1996-01-04 | 1997-07-10 | Deutsche Telekom Ag | Verfahren und Vorrichtung zur Herstellung strukturierter lambda/4-Plättchen, Spiegel, Gitter und Prismen auf dreidimensionalen Flächen |
| US5735862A (en) * | 1996-09-23 | 1998-04-07 | Jennings; Erwin Reeves | Semi-automatic suturing and sewing device |
| GB2321063A (en) * | 1997-01-08 | 1998-07-15 | Oxford Plasma Technology Ltd | Reactive particle beam sputtering |
| US6190511B1 (en) * | 1997-03-13 | 2001-02-20 | David T. Wei | Method and apparatus for ion beam sputter deposition of thin films |
| US6063244A (en) * | 1998-05-21 | 2000-05-16 | International Business Machines Corporation | Dual chamber ion beam sputter deposition system |
| GB9901093D0 (en) * | 1999-01-20 | 1999-03-10 | Marconi Electronic Syst Ltd | Method of making coatings |
| US6214183B1 (en) * | 1999-01-30 | 2001-04-10 | Advanced Ion Technology, Inc. | Combined ion-source and target-sputtering magnetron and a method for sputtering conductive and nonconductive materials |
| US6172810B1 (en) | 1999-02-26 | 2001-01-09 | 3M Innovative Properties Company | Retroreflective articles having polymer multilayer reflective coatings |
| US6503564B1 (en) * | 1999-02-26 | 2003-01-07 | 3M Innovative Properties Company | Method of coating microstructured substrates with polymeric layer(s), allowing preservation of surface feature profile |
| US6296741B1 (en) * | 1999-06-25 | 2001-10-02 | International Business Machines Corporation | Method of making oxide barrier layer for a spin tunnel junction |
| US6224718B1 (en) | 1999-07-14 | 2001-05-01 | Veeco Instruments, Inc. | Target assembly for ion beam sputter deposition with multiple paddles each having targets on both sides |
| KR100897771B1 (ko) * | 2001-03-13 | 2009-05-15 | 도쿄엘렉트론가부시키가이샤 | 막형성방법 및 막형성장치 |
| US6402900B1 (en) * | 2001-03-16 | 2002-06-11 | 4 Wave, Inc. | System and method for performing sputter deposition using ion sources, targets and a substrate arranged about the faces of a cube |
| US6679976B2 (en) | 2001-03-16 | 2004-01-20 | 4Wave, Inc. | System and method for performing sputter deposition with multiple targets using independent ion and electron sources and independent target biasing with DC pulse signals |
| US6750156B2 (en) | 2001-10-24 | 2004-06-15 | Applied Materials, Inc. | Method and apparatus for forming an anti-reflective coating on a substrate |
| TW531773B (en) * | 2002-02-08 | 2003-05-11 | Au Optronics Corp | Equipment for alignment film manufacturing |
| GB0222331D0 (en) * | 2002-09-26 | 2002-10-30 | Teer Coatings Ltd | A method for depositing multilayer coatings with controlled thickness |
| US6783637B2 (en) * | 2002-10-31 | 2004-08-31 | Freescale Semiconductor, Inc. | High throughput dual ion beam deposition apparatus |
| US7172681B2 (en) * | 2003-02-05 | 2007-02-06 | Bridgestone Corporation | Process for producing rubber-based composite material |
| FR2856677B1 (fr) * | 2003-06-27 | 2006-12-01 | Saint Gobain | Substrat revetu d'une couche dielectrique et procede pour sa fabrication |
| FR2857467B1 (fr) * | 2003-07-09 | 2005-08-19 | Saint Gobain | Dispositif electrocommandable a proprietes optiques et/ou energetiques variables |
| JP4775968B2 (ja) * | 2007-08-22 | 2011-09-21 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 配向膜形成装置及び方法 |
| FR2971261B1 (fr) * | 2011-02-08 | 2013-09-20 | Centre Nat Rech Scient | Dispositif et procede de pulverisation ionique |
| MX2016015360A (es) * | 2014-06-30 | 2017-03-03 | Halliburton Energy Services Inc | Deposicion de elementos informaticos integrados (ice) mediante una etapa de traslacion. |
| BR112016023227B1 (pt) * | 2014-06-30 | 2022-04-12 | Halliburton Energy Services, Inc. | Método para produzir um núcleo de elemento computacional integrado e sistema para produção de um núcleo de elemento computacional integrado |
| WO2017095731A2 (en) * | 2015-12-02 | 2017-06-08 | Sabic Global Technologies B.V. | Application of multiple plasma coating layers in a continuous vacuum |
| CN105861994A (zh) * | 2016-04-13 | 2016-08-17 | 广东鸿鹄高飞科技发展有限公司 | 一种现代发动机智能瞬间离子镀复新技术 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2020701A (en) * | 1978-04-13 | 1979-11-21 | Litton Systems Inc | Reactive sputtering of oxide films |
| EP0326843A1 (de) * | 1988-01-29 | 1989-08-09 | Multi-Arc Oberflächentechnik GmbH | Beschichtungskammer mit geregelter Zusammensetzung der Gasatmosphäre |
| EP0409451A1 (en) * | 1989-07-18 | 1991-01-23 | Optical Coating Laboratory, Inc. | Process for depositing optical thin films on both planar and non-planar substrates |
| EP0428358A2 (en) * | 1989-11-13 | 1991-05-22 | Optical Coating Laboratory, Inc. | Geometries and configurations for magnetron sputtering apparatus |
| US5240583A (en) * | 1992-01-14 | 1993-08-31 | Honeywell Inc. | Apparatus to deposit multilayer films |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB953556A (en) * | 1959-12-31 | 1964-03-25 | Siemens Ag | Improvements in or relating to the preparation of the surfaces of metals or semi-conductor bodies |
| FR2082217A5 (en) * | 1970-03-06 | 1971-12-10 | Cit Alcatel | Substrate coating by cathodic sputtering andevaporation |
| FR2183603B1 (enrdf_load_stackoverflow) * | 1972-05-12 | 1974-08-30 | Cit Alcatel | |
| DE2307649B2 (de) * | 1973-02-16 | 1980-07-31 | Robert Bosch Gmbh, 7000 Stuttgart | Anordnung zum Aufstäuben verschiedener Materialien auf einem Substrat |
| DE2642599A1 (de) * | 1976-09-22 | 1978-03-23 | Siemens Ag | Verfahren zur herstellung von implantierten gebieten in einem substrat |
| JPS5385153A (en) * | 1977-01-06 | 1978-07-27 | Mitsubishi Electric Corp | Forming method for light reflective metallic film and heat absorbent material film on face panel inside and its unit |
| US4604181A (en) * | 1984-09-14 | 1986-08-05 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Apparatus for producing oxidation protection coatings for polymers |
| JPS62158863A (ja) * | 1985-12-30 | 1987-07-14 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 被膜形成装置 |
| US4793908A (en) * | 1986-12-29 | 1988-12-27 | Rockwell International Corporation | Multiple ion source method and apparatus for fabricating multilayer optical films |
| JPS63290271A (ja) * | 1987-05-20 | 1988-11-28 | Seiko Epson Corp | スパッタ装置のタ−ゲット部シャッタ |
| JPH0774441B2 (ja) * | 1987-06-05 | 1995-08-09 | 株式会社日立製作所 | イオンビ−ムスパツタ装置 |
| US5015353A (en) * | 1987-09-30 | 1991-05-14 | The United States Of America As Represented By The Secretary Of The Navy | Method for producing substoichiometric silicon nitride of preselected proportions |
| US4851095A (en) * | 1988-02-08 | 1989-07-25 | Optical Coating Laboratory, Inc. | Magnetron sputtering apparatus and process |
| JPH01268859A (ja) * | 1988-04-20 | 1989-10-26 | Casio Comput Co Ltd | 透明導電膜の形成方法および形成装置 |
| US5080455A (en) * | 1988-05-17 | 1992-01-14 | William James King | Ion beam sputter processing |
| EP0390692A3 (en) * | 1989-03-29 | 1991-10-02 | Terumo Kabushiki Kaisha | Method of forming thin film, apparatus for forming thin film and sensor |
| DE3920835C2 (de) * | 1989-06-24 | 1997-12-18 | Leybold Ag | Einrichtung zum Beschichten von Substraten |
| EP0410627A1 (en) * | 1989-07-27 | 1991-01-30 | Kabushiki Kaisha Toshiba | Oxide film with preferred crystal orientation, method of manufacturing the same, and magneto-optical recording medium |
| EP0429993B1 (en) * | 1989-11-17 | 1995-08-02 | Nissin Electric Company, Limited | Method of forming thin film containing boron nitride, magnetic head and method of preparing said magnetic head |
| JP2713481B2 (ja) * | 1989-12-04 | 1998-02-16 | 株式会社日立製作所 | イオンビームスパッタによる多元系薄膜形成方法および多元系薄膜形成装置 |
| US5229194A (en) * | 1991-12-09 | 1993-07-20 | Guardian Industries Corp. | Heat treatable sputter-coated glass systems |
| US5308461A (en) * | 1992-01-14 | 1994-05-03 | Honeywell Inc. | Method to deposit multilayer films |
-
1992
- 1992-12-03 GB GB929225270A patent/GB9225270D0/en active Pending
-
1993
- 1993-11-29 CA CA002110250A patent/CA2110250C/en not_active Expired - Fee Related
- 1993-12-02 DE DE4341173A patent/DE4341173B4/de not_active Expired - Fee Related
- 1993-12-03 FR FR9314524A patent/FR2698884A1/fr active Granted
- 1993-12-03 JP JP5304230A patent/JPH06220635A/ja active Pending
- 1993-12-03 CH CH03612/93A patent/CH687464A5/fr not_active IP Right Cessation
- 1993-12-03 US US08/160,876 patent/US5454919A/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2020701A (en) * | 1978-04-13 | 1979-11-21 | Litton Systems Inc | Reactive sputtering of oxide films |
| EP0326843A1 (de) * | 1988-01-29 | 1989-08-09 | Multi-Arc Oberflächentechnik GmbH | Beschichtungskammer mit geregelter Zusammensetzung der Gasatmosphäre |
| EP0409451A1 (en) * | 1989-07-18 | 1991-01-23 | Optical Coating Laboratory, Inc. | Process for depositing optical thin films on both planar and non-planar substrates |
| EP0428358A2 (en) * | 1989-11-13 | 1991-05-22 | Optical Coating Laboratory, Inc. | Geometries and configurations for magnetron sputtering apparatus |
| US5240583A (en) * | 1992-01-14 | 1993-08-31 | Honeywell Inc. | Apparatus to deposit multilayer films |
Also Published As
| Publication number | Publication date |
|---|---|
| CH687464A5 (fr) | 1996-12-13 |
| US5454919A (en) | 1995-10-03 |
| CA2110250C (en) | 2004-08-24 |
| JPH06220635A (ja) | 1994-08-09 |
| FR2698884B1 (enrdf_load_stackoverflow) | 1997-02-07 |
| CA2110250A1 (en) | 1994-06-04 |
| FR2698884A1 (fr) | 1994-06-10 |
| DE4341173A1 (de) | 1994-06-09 |
| GB9225270D0 (en) | 1993-01-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8127 | New person/name/address of the applicant |
Owner name: BAE SYSTEMS AVIONICS LTD., FARNBOROUGH, HAMPSHIRE, |
|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |