DE4002970C2 - - Google Patents

Info

Publication number
DE4002970C2
DE4002970C2 DE4002970A DE4002970A DE4002970C2 DE 4002970 C2 DE4002970 C2 DE 4002970C2 DE 4002970 A DE4002970 A DE 4002970A DE 4002970 A DE4002970 A DE 4002970A DE 4002970 C2 DE4002970 C2 DE 4002970C2
Authority
DE
Germany
Prior art keywords
layer
laser
active
active layer
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE4002970A
Other languages
German (de)
English (en)
Other versions
DE4002970A1 (de
Inventor
Masato Itami Hyogo Jp Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE4002970A1 publication Critical patent/DE4002970A1/de
Application granted granted Critical
Publication of DE4002970C2 publication Critical patent/DE4002970C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE4002970A 1989-02-01 1990-02-01 Halbleiterlaser und verfahren zu dessen herstellung Granted DE4002970A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1024453A JPH02203586A (ja) 1989-02-01 1989-02-01 半導体レーザ装置とその製造方法

Publications (2)

Publication Number Publication Date
DE4002970A1 DE4002970A1 (de) 1990-08-02
DE4002970C2 true DE4002970C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-08-13

Family

ID=12138580

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4002970A Granted DE4002970A1 (de) 1989-02-01 1990-02-01 Halbleiterlaser und verfahren zu dessen herstellung

Country Status (4)

Country Link
US (1) US5020067A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH02203586A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE4002970A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL9000254A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950004667A (ko) * 1993-07-29 1995-02-18 가나이 쯔또무 반도체레이저소자 및 그 제작방법
JP4011640B2 (ja) * 1995-03-02 2007-11-21 三菱電機株式会社 半導体レーザ，及び半導体レーザの製造方法
JPH09139550A (ja) * 1995-11-16 1997-05-27 Mitsubishi Electric Corp 半導体レーザ装置の製造方法、及び半導体レーザ装置
DE69723009T2 (de) * 1996-09-06 2004-05-06 Sanyo Electric Co., Ltd., Moriguchi Halbleiterlaservorrichtung
KR100275532B1 (ko) * 1998-09-21 2001-01-15 이계철 자동정렬 이온주입 공정을 이용한 고출력 반도체 레이저 제조방법
US6876006B1 (en) 1999-04-27 2005-04-05 Schlumberger Technology Corporation Radiation source
JP3676965B2 (ja) * 1999-08-31 2005-07-27 シャープ株式会社 半導体レーザ素子及びその製造方法
JP4309636B2 (ja) * 2002-10-17 2009-08-05 三菱電機株式会社 半導体レーザおよび光通信用素子
JP4601904B2 (ja) * 2003-01-30 2010-12-22 三菱電機株式会社 半導体レーザ装置
KR20050001605A (ko) * 2003-06-26 2005-01-07 삼성전기주식회사 반도체 레이저 소자 및 그 제조방법
US8437375B2 (en) 2008-10-31 2013-05-07 Optoenergy, Inc Semiconductor laser element
JP6020190B2 (ja) * 2013-01-21 2016-11-02 セイコーエプソン株式会社 発光装置、スーパールミネッセントダイオード、およびプロジェクター

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3855546A (en) * 1973-09-21 1974-12-17 Texas Instruments Inc Folded lobe large optical cavity laser diode
US4371966A (en) * 1980-11-06 1983-02-01 Xerox Corporation Heterostructure lasers with combination active strip and passive waveguide strip
JPS60101989A (ja) * 1983-11-08 1985-06-06 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ及びその製造方法
JPH0648743B2 (ja) * 1987-02-18 1994-06-22 三菱電機株式会社 半導体レ−ザ装置の製造方法
JPH01235397A (ja) * 1988-03-16 1989-09-20 Mitsubishi Electric Corp 半導体レーザ
GB2222307B (en) * 1988-07-22 1992-04-01 Mitsubishi Electric Corp Semiconductor laser
US4961197A (en) * 1988-09-07 1990-10-02 Hitachi, Ltd. Semiconductor laser device

Also Published As

Publication number Publication date
NL9000254A (nl) 1990-09-03
JPH02203586A (ja) 1990-08-13
DE4002970A1 (de) 1990-08-02
US5020067A (en) 1991-05-28

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee