DE3916983C2 - - Google Patents
Info
- Publication number
- DE3916983C2 DE3916983C2 DE3916983A DE3916983A DE3916983C2 DE 3916983 C2 DE3916983 C2 DE 3916983C2 DE 3916983 A DE3916983 A DE 3916983A DE 3916983 A DE3916983 A DE 3916983A DE 3916983 C2 DE3916983 C2 DE 3916983C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- gas
- formation
- zno
- space
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 166
- 239000011787 zinc oxide Substances 0.000 claims description 83
- 238000000034 method Methods 0.000 claims description 63
- 230000015572 biosynthetic process Effects 0.000 claims description 57
- 239000000047 product Substances 0.000 claims description 36
- 230000004913 activation Effects 0.000 claims description 31
- -1 alkyl zinc compound Chemical class 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 8
- 239000007858 starting material Substances 0.000 claims description 7
- 239000002243 precursor Substances 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000013067 intermediate product Substances 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 230000004936 stimulating effect Effects 0.000 claims 4
- 239000010410 layer Substances 0.000 description 117
- 239000007789 gas Substances 0.000 description 54
- 239000000758 substrate Substances 0.000 description 46
- 239000011149 active material Substances 0.000 description 30
- 230000008569 process Effects 0.000 description 25
- 239000010408 film Substances 0.000 description 23
- 239000004973 liquid crystal related substance Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 19
- 239000002994 raw material Substances 0.000 description 17
- 238000004544 sputter deposition Methods 0.000 description 15
- 239000010409 thin film Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000013517 stratification Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 150000003752 zinc compounds Chemical class 0.000 description 2
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000010410 dusting Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 231100000897 loss of orientation Toxicity 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/17—Photovoltaic cells having only PIN junction potential barriers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63125792A JPH01298164A (ja) | 1988-05-25 | 1988-05-25 | 機能性堆積膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3916983A1 DE3916983A1 (de) | 1989-11-30 |
| DE3916983C2 true DE3916983C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-11-22 |
Family
ID=14918985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3916983A Granted DE3916983A1 (de) | 1988-05-25 | 1989-05-24 | Verfahren zur bildung funktionaler zinkoxid-filme unter verwendung von alkylzink-verbindung und sauerstoff enthaltendem gas |
Country Status (4)
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07100855B2 (ja) * | 1990-02-09 | 1995-11-01 | 株式会社日立製作所 | 薄膜形成方法 |
| JP2721271B2 (ja) * | 1990-11-20 | 1998-03-04 | キヤノン株式会社 | 太陽電池の製造方法 |
| AU1745695A (en) * | 1994-06-03 | 1996-01-04 | Materials Research Corporation | A method of nitridization of titanium thin films |
| US5628829A (en) * | 1994-06-03 | 1997-05-13 | Materials Research Corporation | Method and apparatus for low temperature deposition of CVD and PECVD films |
| US5975912A (en) * | 1994-06-03 | 1999-11-02 | Materials Research Corporation | Low temperature plasma-enhanced formation of integrated circuits |
| US5665640A (en) | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
| US6242080B1 (en) * | 1997-07-09 | 2001-06-05 | Canon Kabushiki Kaisha | Zinc oxide thin film and process for producing the film |
| US6238808B1 (en) * | 1998-01-23 | 2001-05-29 | Canon Kabushiki Kaisha | Substrate with zinc oxide layer, method for producing zinc oxide layer, photovoltaic device, and method for producing photovoltaic device |
| AUPQ800200A0 (en) * | 2000-06-06 | 2000-06-29 | Unisearch Limited | A method of growing a zno film |
| EP1289025A1 (fr) * | 2001-08-30 | 2003-03-05 | Universite De Neuchatel | Procédé de dépot d'une couche d'oxyde sur un substrat et cellule photovoltaique utilisant ce substrat |
| KR100455070B1 (ko) * | 2002-02-26 | 2004-11-06 | 한국전자통신연구원 | 원자층 증착법을 이용한 ｃ축 배향 ＺｎＯ 박막 제조방법및 이를 이용한 광소자 |
| KR100623562B1 (ko) * | 2002-07-08 | 2006-09-13 | 간사이 티.엘.오 가부시키가이샤 | 실리콘 질화막의 형성 방법 및 형성 장치 |
| WO2005078154A1 (ja) * | 2004-02-16 | 2005-08-25 | Kaneka Corporation | 透明導電膜の製造方法、及びタンデム型薄膜光電変換装置の製造方法 |
| TWI445178B (zh) * | 2005-01-28 | 2014-07-11 | Semiconductor Energy Lab | 半導體裝置，電子裝置，和半導體裝置的製造方法 |
| JP4841173B2 (ja) * | 2005-05-27 | 2011-12-21 | 昭和シェル石油株式会社 | Ｃｉｓ系薄膜太陽電池の高抵抗バッファ層・窓層連続製膜方法及び製膜装置 |
| JP2007049128A (ja) * | 2005-07-12 | 2007-02-22 | Seiko Epson Corp | 製膜装置 |
| US8197914B2 (en) * | 2005-11-21 | 2012-06-12 | Air Products And Chemicals, Inc. | Method for depositing zinc oxide at low temperatures and products formed thereby |
| US7736698B2 (en) | 2006-05-05 | 2010-06-15 | Pilkington Group Limited | Method of depositing zinc oxide coatings on a substrate |
| US9598768B2 (en) | 2008-09-24 | 2017-03-21 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Method of forming zinc oxide film (ZnO) or magnesium zinc oxide film (ZnMgO) and apparatus for forming zinc oxide film or magnesium zinc oxide film |
| TW201222630A (en) | 2010-11-16 | 2012-06-01 | Ind Tech Res Inst | Film deposition system and method and gas supplying apparatus being used therein |
| KR20130054812A (ko) * | 2011-11-17 | 2013-05-27 | 삼성코닝정밀소재 주식회사 | 산화아연 전구체 및 이를 이용한 산화아연계 박막 증착방법 |
| CN103014705B (zh) * | 2012-12-27 | 2014-12-17 | 沈阳工程学院 | Cu/ZnO/Al光电透明导电薄膜的沉积方法 |
| KR101646399B1 (ko) * | 2014-12-05 | 2016-08-05 | 동부대우전자 주식회사 | 후드 겸용 전자렌지 및 이의 사용 방법 |
| US20190385828A1 (en) * | 2018-06-19 | 2019-12-19 | Lam Research Corporation | Temperature control systems and methods for removing metal oxide films |
| JP7448909B2 (ja) * | 2019-06-27 | 2024-03-13 | 住友重機械工業株式会社 | 成膜方法、及び成膜装置 |
| CN114664657A (zh) * | 2021-10-29 | 2022-06-24 | 中国科学院上海微系统与信息技术研究所 | 一种晶圆表面处理方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4853251A (en) * | 1985-02-22 | 1989-08-01 | Canon Kabushiki Kaisha | Process for forming deposited film including carbon as a constituent element |
| JPH0682625B2 (ja) * | 1985-06-04 | 1994-10-19 | シーメンス ソーラー インダストリーズ，エル．ピー． | 酸化亜鉛膜の蒸着方法 |
| JPH0831413B2 (ja) * | 1986-11-26 | 1996-03-27 | キヤノン株式会社 | Ｐｉｎ型光電変換素子の製造方法 |
-
1988
- 1988-05-25 JP JP63125792A patent/JPH01298164A/ja active Pending
-
1989
- 1989-05-22 US US07/354,716 patent/US5002796A/en not_active Expired - Lifetime
- 1989-05-24 DE DE3916983A patent/DE3916983A1/de active Granted
- 1989-05-25 CN CN89104710A patent/CN1026132C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5002796A (en) | 1991-03-26 |
| JPH01298164A (ja) | 1989-12-01 |
| CN1039449A (zh) | 1990-02-07 |
| CN1026132C (zh) | 1994-10-05 |
| DE3916983A1 (de) | 1989-11-30 |
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Free format text: TIEDTKE, H., DIPL.-ING. BUEHLING, G., DIPL.-CHEM. KINNE, R., DIPL.-ING. GRUPE, P., DIPL.-ING. PELLMANN, H., DIPL.-ING. GRAMS, K., DIPL.-ING., PAT.-ANWAELTE, 8000 MUENCHEN |
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