JPH01298164A - 機能性堆積膜の形成方法 - Google Patents

機能性堆積膜の形成方法

Info

Publication number
JPH01298164A
JPH01298164A JP63125792A JP12579288A JPH01298164A JP H01298164 A JPH01298164 A JP H01298164A JP 63125792 A JP63125792 A JP 63125792A JP 12579288 A JP12579288 A JP 12579288A JP H01298164 A JPH01298164 A JP H01298164A
Authority
JP
Japan
Prior art keywords
film
precursor
zno
gas
active species
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63125792A
Other languages
English (en)
Japanese (ja)
Inventor
Akiyuki Nishida
彰志 西田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP63125792A priority Critical patent/JPH01298164A/ja
Priority to US07/354,716 priority patent/US5002796A/en
Priority to DE3916983A priority patent/DE3916983A1/de
Priority to CN89104710A priority patent/CN1026132C/zh
Publication of JPH01298164A publication Critical patent/JPH01298164A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Liquid Crystal (AREA)
JP63125792A 1988-05-25 1988-05-25 機能性堆積膜の形成方法 Pending JPH01298164A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP63125792A JPH01298164A (ja) 1988-05-25 1988-05-25 機能性堆積膜の形成方法
US07/354,716 US5002796A (en) 1988-05-25 1989-05-22 Process for forming functional zinc oxide films using alkyl zinc compound and oxygen-containing gas
DE3916983A DE3916983A1 (de) 1988-05-25 1989-05-24 Verfahren zur bildung funktionaler zinkoxid-filme unter verwendung von alkylzink-verbindung und sauerstoff enthaltendem gas
CN89104710A CN1026132C (zh) 1988-05-25 1989-05-25 使用烷基锌和含氧气体制备功能性氧化锌薄膜的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63125792A JPH01298164A (ja) 1988-05-25 1988-05-25 機能性堆積膜の形成方法

Publications (1)

Publication Number Publication Date
JPH01298164A true JPH01298164A (ja) 1989-12-01

Family

ID=14918985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63125792A Pending JPH01298164A (ja) 1988-05-25 1988-05-25 機能性堆積膜の形成方法

Country Status (4)

Country Link
US (1) US5002796A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPH01298164A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (1) CN1026132C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3916983A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03232971A (ja) * 1990-02-09 1991-10-16 Hitachi Ltd 薄膜形成方法
KR100455070B1 (ko) * 2002-02-26 2004-11-06 한국전자통신연구원 원자층 증착법을 이용한 ｃ축 배향 ＺｎＯ 박막 제조방법및 이를 이용한 광소자
JP2005501182A (ja) * 2001-08-30 2005-01-13 ユニヴェルスィテ ドゥ ヌシャテル 基材上に酸化物層を形成する方法、及びこの基材を使用する光電池
JPWO2004006321A1 (ja) * 2002-07-08 2005-11-10 関西ティー・エル・オー株式会社 シリコン窒化膜の形成方法および形成装置
WO2006126598A1 (ja) * 2005-05-27 2006-11-30 Showa Shell Sekiyu K.K. Ｃｉｓ系薄膜太陽電池の高抵抗バッファ層・窓層（透明導電膜）連続製膜方法及びその連続製膜方法を実施するための連続製膜装置
JP2007049128A (ja) * 2005-07-12 2007-02-22 Seiko Epson Corp 製膜装置
JP2021528857A (ja) * 2018-06-19 2021-10-21 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 金属酸化物膜を除去するための温度制御システムおよびその方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2721271B2 (ja) * 1990-11-20 1998-03-04 キヤノン株式会社 太陽電池の製造方法
US5975912A (en) * 1994-06-03 1999-11-02 Materials Research Corporation Low temperature plasma-enhanced formation of integrated circuits
US5628829A (en) * 1994-06-03 1997-05-13 Materials Research Corporation Method and apparatus for low temperature deposition of CVD and PECVD films
US5665640A (en) 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
WO1995034092A1 (en) * 1994-06-03 1995-12-14 Materials Research Corporation A method of nitridization of titanium thin films
US6242080B1 (en) * 1997-07-09 2001-06-05 Canon Kabushiki Kaisha Zinc oxide thin film and process for producing the film
US6238808B1 (en) * 1998-01-23 2001-05-29 Canon Kabushiki Kaisha Substrate with zinc oxide layer, method for producing zinc oxide layer, photovoltaic device, and method for producing photovoltaic device
AUPQ800200A0 (en) * 2000-06-06 2000-06-29 Unisearch Limited A method of growing a zno film
EP1717341B1 (en) * 2004-02-16 2015-04-15 Kaneka Corporation Process for producing transparent conductive film and process for producing tandem thin-film photoelectric converter
TWI569441B (zh) * 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US8197914B2 (en) * 2005-11-21 2012-06-12 Air Products And Chemicals, Inc. Method for depositing zinc oxide at low temperatures and products formed thereby
EP2024291A2 (en) 2006-05-05 2009-02-18 Pilkington Group Limited Method of depositing zinc oxide coatings on a substrate
DE112008004011T5 (de) 2008-09-24 2011-07-14 Toshiba Mitsubishi-Electric Industrial Systems Corporation Verfahren zur Bildung von Zinkoxidfilm (ZnO) oder Magnesiumzinkoxidfilm (ZnMgO) und Anlage zur Bildung von Zinkoxidfilm oder Magnesiumzinkoxidfilm
TW201222630A (en) 2010-11-16 2012-06-01 Ind Tech Res Inst Film deposition system and method and gas supplying apparatus being used therein
KR20130054812A (ko) * 2011-11-17 2013-05-27 삼성코닝정밀소재 주식회사 산화아연 전구체 및 이를 이용한 산화아연계 박막 증착방법
CN103014705B (zh) * 2012-12-27 2014-12-17 沈阳工程学院 Cu/ZnO/Al光电透明导电薄膜的沉积方法
KR101646399B1 (ko) * 2014-12-05 2016-08-05 동부대우전자 주식회사 후드 겸용 전자렌지 및 이의 사용 방법
JP7448909B2 (ja) * 2019-06-27 2024-03-13 住友重機械工業株式会社 成膜方法、及び成膜装置
CN114664657A (zh) * 2021-10-29 2022-06-24 中国科学院上海微系统与信息技术研究所 一种晶圆表面处理方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4853251A (en) * 1985-02-22 1989-08-01 Canon Kabushiki Kaisha Process for forming deposited film including carbon as a constituent element
JPH0682625B2 (ja) * 1985-06-04 1994-10-19 シーメンス ソーラー インダストリーズ，エル．ピー． 酸化亜鉛膜の蒸着方法
JPH0831413B2 (ja) * 1986-11-26 1996-03-27 キヤノン株式会社 Ｐｉｎ型光電変換素子の製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03232971A (ja) * 1990-02-09 1991-10-16 Hitachi Ltd 薄膜形成方法
JP2005501182A (ja) * 2001-08-30 2005-01-13 ユニヴェルスィテ ドゥ ヌシャテル 基材上に酸化物層を形成する方法、及びこの基材を使用する光電池
KR100455070B1 (ko) * 2002-02-26 2004-11-06 한국전자통신연구원 원자층 증착법을 이용한 ｃ축 배향 ＺｎＯ 박막 제조방법및 이를 이용한 광소자
JPWO2004006321A1 (ja) * 2002-07-08 2005-11-10 関西ティー・エル・オー株式会社 シリコン窒化膜の形成方法および形成装置
WO2006126598A1 (ja) * 2005-05-27 2006-11-30 Showa Shell Sekiyu K.K. Ｃｉｓ系薄膜太陽電池の高抵抗バッファ層・窓層（透明導電膜）連続製膜方法及びその連続製膜方法を実施するための連続製膜装置
JP2006332440A (ja) * 2005-05-27 2006-12-07 Showa Shell Sekiyu Kk Ｃｉｓ系薄膜太陽電池の高抵抗バッファ層・窓層（透明導電膜）連続製膜方法及び製膜装置
US8093096B2 (en) 2005-05-27 2012-01-10 Showa Shell Sekiyu K.K. Method of successive high-resistance buffer layer/window layer (transparent conductive film) formation for CIS based thin-film solar cell and apparatus for successive film formation for practicing the method of successive film formation
JP2007049128A (ja) * 2005-07-12 2007-02-22 Seiko Epson Corp 製膜装置
JP2021528857A (ja) * 2018-06-19 2021-10-21 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 金属酸化物膜を除去するための温度制御システムおよびその方法

Also Published As

Publication number Publication date
DE3916983A1 (de) 1989-11-30
CN1026132C (zh) 1994-10-05
CN1039449A (zh) 1990-02-07
DE3916983C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-11-22
US5002796A (en) 1991-03-26

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