DE3888462D1 - Verfahren zur Herstellung einer gegen Überspannungen selbst-geschützten Halbleiteranordnung. - Google Patents
Verfahren zur Herstellung einer gegen Überspannungen selbst-geschützten Halbleiteranordnung.Info
- Publication number
- DE3888462D1 DE3888462D1 DE88119221T DE3888462T DE3888462D1 DE 3888462 D1 DE3888462 D1 DE 3888462D1 DE 88119221 T DE88119221 T DE 88119221T DE 3888462 T DE3888462 T DE 3888462T DE 3888462 D1 DE3888462 D1 DE 3888462D1
- Authority
- DE
- Germany
- Prior art keywords
- self
- producing
- semiconductor device
- protected against
- against overvoltages
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66363—Thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7424—Thyristor-type devices, e.g. having four-zone regenerative action having a built-in localised breakdown/breakover region, e.g. self-protected against destructive spontaneous, e.g. voltage breakover, firing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62294364A JPH01136369A (ja) | 1987-11-21 | 1987-11-21 | 過電圧保護機能付半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3888462D1 true DE3888462D1 (de) | 1994-04-21 |
DE3888462T2 DE3888462T2 (de) | 1994-07-21 |
Family
ID=17806754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3888462T Expired - Fee Related DE3888462T2 (de) | 1987-11-21 | 1988-11-18 | Verfahren zur Herstellung einer gegen Überspannungen selbst-geschützten Halbleiteranordnung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4929563A (de) |
EP (1) | EP0317915B1 (de) |
JP (1) | JPH01136369A (de) |
CA (1) | CA1293334C (de) |
DE (1) | DE3888462T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5243205A (en) * | 1989-10-16 | 1993-09-07 | Kabushiki Kaisha Toshiba | Semiconductor device with overvoltage protective function |
DE59010309D1 (de) * | 1990-03-12 | 1996-06-05 | Siemens Ag | Verfahren zur definierten Spannungseinstellung bei überkopfzündfesten Halbleiterbauelementen und Halbleiterbauelemente mit definierter Überkopfzündspannung |
US5240865A (en) * | 1990-07-30 | 1993-08-31 | Texas Instruments Incorporated | Method of forming a thyristor on an SOI substrate |
US5204273A (en) * | 1990-08-20 | 1993-04-20 | Siemens Aktiengesellschaft | Method for the manufacturing of a thyristor with defined lateral resistor |
JP2960506B2 (ja) * | 1990-09-19 | 1999-10-06 | 株式会社日立製作所 | ターンオフ形半導体素子 |
JP3155797B2 (ja) * | 1991-12-26 | 2001-04-16 | 株式会社日立製作所 | 過電圧自己保護型半導体装置、及び、それを使用した半導体回路 |
US7736976B2 (en) * | 2001-10-04 | 2010-06-15 | Vishay General Semiconductor Llc | Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands |
US6649477B2 (en) * | 2001-10-04 | 2003-11-18 | General Semiconductor, Inc. | Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islands |
US6686244B2 (en) * | 2002-03-21 | 2004-02-03 | General Semiconductor, Inc. | Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step |
CN108767007B (zh) * | 2018-06-04 | 2021-01-22 | 电子科技大学 | 一种具有挖槽埋氧电流阻挡层的光控晶闸管 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH594984A5 (de) * | 1976-06-02 | 1978-01-31 | Bbc Brown Boveri & Cie | |
US4555845A (en) * | 1982-10-13 | 1985-12-03 | Westinghouse Electric Corp. | Temperature stable self-protected thyristor and method of producing |
US4514898A (en) * | 1983-02-18 | 1985-05-07 | Westinghouse Electric Corp. | Method of making a self protected thyristor |
IE840248L (en) * | 1983-02-18 | 1984-08-18 | Westinghouse Electric Corp | Light activated power transistor |
US4516315A (en) * | 1983-05-09 | 1985-05-14 | Westinghouse Electric Corp. | Method of making a self-protected thyristor |
IE861474L (en) * | 1985-06-20 | 1986-12-20 | Tsnii Kozhevenno Obuvnoi Ptomy | Temperature stable self-protected thyristor and method of¹producing |
-
1987
- 1987-11-21 JP JP62294364A patent/JPH01136369A/ja active Granted
-
1988
- 1988-11-18 EP EP88119221A patent/EP0317915B1/de not_active Expired - Lifetime
- 1988-11-18 DE DE3888462T patent/DE3888462T2/de not_active Expired - Fee Related
- 1988-11-18 US US07/272,842 patent/US4929563A/en not_active Expired - Lifetime
- 1988-11-18 CA CA000583515A patent/CA1293334C/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0469823B2 (de) | 1992-11-09 |
DE3888462T2 (de) | 1994-07-21 |
EP0317915B1 (de) | 1994-03-16 |
EP0317915A3 (en) | 1990-04-11 |
JPH01136369A (ja) | 1989-05-29 |
EP0317915A2 (de) | 1989-05-31 |
CA1293334C (en) | 1991-12-17 |
US4929563A (en) | 1990-05-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |