DE3885363T2 - Packungsstruktur für Halbleiteranordnung. - Google Patents

Packungsstruktur für Halbleiteranordnung.

Info

Publication number
DE3885363T2
DE3885363T2 DE3885363T DE3885363T DE3885363T2 DE 3885363 T2 DE3885363 T2 DE 3885363T2 DE 3885363 T DE3885363 T DE 3885363T DE 3885363 T DE3885363 T DE 3885363T DE 3885363 T2 DE3885363 T2 DE 3885363T2
Authority
DE
Germany
Prior art keywords
semiconductor device
package structure
package
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3885363T
Other languages
English (en)
Other versions
DE3885363D1 (de
Inventor
Masahiko C O Lsi Kenkyus Denda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Application granted granted Critical
Publication of DE3885363D1 publication Critical patent/DE3885363D1/de
Publication of DE3885363T2 publication Critical patent/DE3885363T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
DE3885363T 1987-07-22 1988-03-29 Packungsstruktur für Halbleiteranordnung. Expired - Lifetime DE3885363T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62181157A JPH073874B2 (ja) 1987-07-22 1987-07-22 半導体装置

Publications (2)

Publication Number Publication Date
DE3885363D1 DE3885363D1 (de) 1993-12-09
DE3885363T2 true DE3885363T2 (de) 1994-06-01

Family

ID=16095884

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3885363T Expired - Lifetime DE3885363T2 (de) 1987-07-22 1988-03-29 Packungsstruktur für Halbleiteranordnung.

Country Status (4)

Country Link
US (1) US4924297A (de)
EP (1) EP0300590B1 (de)
JP (1) JPH073874B2 (de)
DE (1) DE3885363T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3556665B2 (ja) * 1993-01-29 2004-08-18 ブリティッシュ・テレコミュニケーションズ・パブリック・リミテッド・カンパニー 光学装置パッケージ
JP3247544B2 (ja) * 1994-05-19 2002-01-15 株式会社東芝 半導体装置
US5821532A (en) * 1997-06-16 1998-10-13 Eastman Kodak Company Imager package substrate

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4871765U (de) * 1971-12-13 1973-09-08
JPS5422115B2 (de) * 1972-05-19 1979-08-04
JPS62195Y2 (de) * 1980-04-08 1987-01-07
JPS56157048A (en) * 1980-05-07 1981-12-04 Nec Corp Semiconductor device
JPS56164585A (en) * 1980-05-23 1981-12-17 Hitachi Ltd Pickup device for solid-state image
JPS6038868B2 (ja) * 1981-11-06 1985-09-03 富士通株式会社 半導体パツケ−ジ
JPS5884572A (ja) * 1981-11-16 1983-05-20 Hitachi Ltd 固体撮像装置
JPS58103275A (ja) * 1981-12-16 1983-06-20 Hitachi Ltd 固体撮像装置
JPS59115546A (ja) * 1982-12-22 1984-07-04 Toshiba Corp 半導体素子用外囲器
JPS6243154A (ja) * 1985-08-20 1987-02-25 Sanyo Electric Co Ltd 半導体装置

Also Published As

Publication number Publication date
JPH073874B2 (ja) 1995-01-18
EP0300590A3 (en) 1990-07-11
US4924297A (en) 1990-05-08
DE3885363D1 (de) 1993-12-09
JPS6425578A (en) 1989-01-27
EP0300590A2 (de) 1989-01-25
EP0300590B1 (de) 1993-11-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition