DE3787763D1 - Zusammengesetzte Halbleiteranordnung. - Google Patents

Zusammengesetzte Halbleiteranordnung.

Info

Publication number
DE3787763D1
DE3787763D1 DE87110100T DE3787763T DE3787763D1 DE 3787763 D1 DE3787763 D1 DE 3787763D1 DE 87110100 T DE87110100 T DE 87110100T DE 3787763 T DE3787763 T DE 3787763T DE 3787763 D1 DE3787763 D1 DE 3787763D1
Authority
DE
Germany
Prior art keywords
semiconductor device
compound semiconductor
compound
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE87110100T
Other languages
English (en)
Other versions
DE3787763T2 (de
Inventor
Mutsuhiro Mori
Tomoyuki Tanaka
Yasumichi Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3787763D1 publication Critical patent/DE3787763D1/de
Publication of DE3787763T2 publication Critical patent/DE3787763T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
DE87110100T 1986-07-14 1987-07-13 Zusammengesetzte Halbleiteranordnung. Expired - Fee Related DE3787763T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61163833A JPH0654796B2 (ja) 1986-07-14 1986-07-14 複合半導体装置

Publications (2)

Publication Number Publication Date
DE3787763D1 true DE3787763D1 (de) 1993-11-18
DE3787763T2 DE3787763T2 (de) 1994-04-28

Family

ID=15781611

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87110100T Expired - Fee Related DE3787763T2 (de) 1986-07-14 1987-07-13 Zusammengesetzte Halbleiteranordnung.

Country Status (5)

Country Link
US (1) US4935799A (de)
EP (1) EP0253353B1 (de)
JP (1) JPH0654796B2 (de)
CA (1) CA1279409C (de)
DE (1) DE3787763T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE35642E (en) * 1987-12-22 1997-10-28 Sgs-Thomson Microelectronics, S.R.L. Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process
IT1217323B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione
JPH0831541B2 (ja) * 1989-02-16 1996-03-27 株式会社東芝 半導体集積回路
US5247200A (en) * 1989-02-16 1993-09-21 Kabushiki Kaisha Toshiba MOSFET input type BiMOS IC device
JP3093771B2 (ja) * 1990-03-22 2000-10-03 沖電気工業株式会社 半導体記憶装置
US5099300A (en) * 1990-06-14 1992-03-24 North Carolina State University Gated base controlled thyristor
JPH06268054A (ja) * 1993-03-10 1994-09-22 Nippondenso Co Ltd 半導体装置
US5591655A (en) * 1995-02-28 1997-01-07 Sgs-Thomson Microelectronics, Inc. Process for manufacturing a vertical switched-emitter structure with improved lateral isolation
US6242967B1 (en) 1998-06-15 2001-06-05 Fuji Electric Co., Ltd. Low on resistance high speed off switching device having unipolar transistors

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2539967C2 (de) * 1975-09-02 1984-06-28 Siemens AG, 1000 Berlin und 8000 München Logikgrundschaltung
US4150392A (en) * 1976-07-31 1979-04-17 Nippon Gakki Seizo Kabushiki Kaisha Semiconductor integrated flip-flop circuit device including merged bipolar and field effect transistors
JPS586234B2 (ja) * 1977-11-17 1983-02-03 富士通株式会社 半導体記憶装置
NL8005995A (nl) * 1980-11-03 1982-06-01 Philips Nv Halfgeleiderinrichting.
DE3103444A1 (de) * 1981-02-02 1982-10-21 Siemens AG, 1000 Berlin und 8000 München Vertikal-mis-feldeffekttransistor mit kleinem durchlasswiderstand
JPS57160159A (en) * 1981-03-28 1982-10-02 Toshiba Corp High breakdown voltage planar type semiconductor device
FR2505102B1 (fr) * 1981-04-29 1986-01-24 Radiotechnique Compelec Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree
US4622573A (en) * 1983-03-31 1986-11-11 International Business Machines Corporation CMOS contacting structure having degeneratively doped regions for the prevention of latch-up
US4698655A (en) * 1983-09-23 1987-10-06 Motorola, Inc. Overvoltage and overtemperature protection circuit
GB2164790A (en) * 1984-09-19 1986-03-26 Philips Electronic Associated Merged bipolar and field effect transistors

Also Published As

Publication number Publication date
DE3787763T2 (de) 1994-04-28
CA1279409C (en) 1991-01-22
EP0253353A2 (de) 1988-01-20
EP0253353A3 (en) 1989-02-08
JPS6319845A (ja) 1988-01-27
EP0253353B1 (de) 1993-10-13
US4935799A (en) 1990-06-19
JPH0654796B2 (ja) 1994-07-20

Similar Documents

Publication Publication Date Title
DE3850855T2 (de) Halbleitervorrichtung.
DE3650012T2 (de) Halbleitervorrichtung.
NL189326C (nl) Halfgeleiderinrichting.
DE3688064D1 (de) Halbleitervorrichtung.
DE3750995T2 (de) Halbleiterlaservorrichtung.
DE3786339D1 (de) Halbleiterlaservorrichtung.
DE3584799D1 (de) Halbleitervorrichtung.
DE3786070T2 (de) Umhüllte Halbleiteranordnung.
DE3773957D1 (de) Halbleitervorrichtung.
DE3770720D1 (de) Halbleiterkamera.
DE3581370D1 (de) Halbleitervorrichtung.
DE3889354T2 (de) Halbleiteranordnung.
DE69021904D1 (de) Zusammengesetzte Halbleitervorrichtung.
DE3586568T2 (de) Halbleitereinrichtung.
DE3776186D1 (de) Halbleiterlaser-vorrichtung.
DE3783507D1 (de) Zusammengesetztes halbleiterbauelement.
DE3751342T2 (de) Halbleiter-Bildaufnahmevorrichtung.
NL193883B (nl) Geïntegreerde halfgeleiderinrichting.
DE3784247D1 (de) Halbleiter-zusammenbau.
DE3787137D1 (de) Halbleiteranordnung.
DE3787763T2 (de) Zusammengesetzte Halbleiteranordnung.
DE3767735D1 (de) Halbleiterspeichervorrichtung.
DE3785859T2 (de) Halbleiterstrukturen.
DE3683955D1 (de) Halbleitervorrichtung.
DE3781175D1 (de) Halbleiterspeichervorrichtung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee