DE3881922D1 - Zusammengesetzte halbleiteranordnung mit nicht-legierten ohmschen kontakten. - Google Patents
Zusammengesetzte halbleiteranordnung mit nicht-legierten ohmschen kontakten.Info
- Publication number
- DE3881922D1 DE3881922D1 DE8888302314T DE3881922T DE3881922D1 DE 3881922 D1 DE3881922 D1 DE 3881922D1 DE 8888302314 T DE8888302314 T DE 8888302314T DE 3881922 T DE3881922 T DE 3881922T DE 3881922 D1 DE3881922 D1 DE 3881922D1
- Authority
- DE
- Germany
- Prior art keywords
- contemporary
- alloy
- contacts
- semiconductor arrangement
- composed semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000956 alloy Substances 0.000 title 1
- 229910045601 alloy Inorganic materials 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6109787 | 1987-03-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3881922D1 true DE3881922D1 (de) | 1993-07-29 |
DE3881922T2 DE3881922T2 (de) | 1993-10-07 |
Family
ID=13161237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE88302314T Expired - Fee Related DE3881922T2 (de) | 1987-03-18 | 1988-03-17 | Zusammengesetzte Halbleiteranordnung mit nicht-legierten ohmschen Kontakten. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4961194A (de) |
EP (1) | EP0283278B1 (de) |
KR (1) | KR920006875B1 (de) |
DE (1) | DE3881922T2 (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5231040A (en) * | 1989-04-27 | 1993-07-27 | Mitsubishi Denki Kabushiki Kaisha | Method of making a field effect transistor |
JPH02285644A (ja) * | 1989-04-27 | 1990-11-22 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5013685A (en) * | 1989-11-02 | 1991-05-07 | At&T Bell Laboratories | Method of making a non-alloyed ohmic contact to III-V semiconductors-on-silicon |
US5266818A (en) * | 1989-11-27 | 1993-11-30 | Kabushiki Kaisha Toshiba | Compound semiconductor device having an emitter contact structure including an Inx Ga1 -x As graded-composition layer |
US5168330A (en) * | 1990-12-03 | 1992-12-01 | Research Triangle Institute | Semiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayer |
JPH04260338A (ja) * | 1991-02-14 | 1992-09-16 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH05198598A (ja) * | 1992-01-22 | 1993-08-06 | Mitsubishi Electric Corp | 化合物半導体装置及びその製造方法 |
DE4211052C1 (en) * | 1992-04-02 | 1993-06-03 | Siemens Ag, 8000 Muenchen, De | Power FET mfr. using angled ion implantation beam - forming asymmetrical insulation zone in contact layer applied to surface of channel layer beneath gate metallisation |
JPH0661269A (ja) * | 1992-08-11 | 1994-03-04 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP3502651B2 (ja) | 1993-02-08 | 2004-03-02 | トリクイント セミコンダクター テキサス、エルピー | 電極形成法 |
JPH07183493A (ja) * | 1993-12-24 | 1995-07-21 | Mitsubishi Electric Corp | 半導体装置 |
JP2606581B2 (ja) * | 1994-05-18 | 1997-05-07 | 日本電気株式会社 | 電界効果トランジスタ及びその製造方法 |
JPH08107216A (ja) * | 1994-10-04 | 1996-04-23 | Fujitsu Ltd | 半導体装置 |
JP3036404B2 (ja) * | 1995-05-25 | 2000-04-24 | 株式会社村田製作所 | 半導体装置とその製造方法 |
US5698900A (en) * | 1996-07-22 | 1997-12-16 | The United States Of America As Represented By The Secretary Of The Air Force | Field effect transistor device with single layer integrated metal and retained semiconductor masking |
US5698870A (en) * | 1996-07-22 | 1997-12-16 | The United States Of America As Represented By The Secretary Of The Air Force | High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal |
US5940694A (en) * | 1996-07-22 | 1999-08-17 | Bozada; Christopher A. | Field effect transistor process with semiconductor mask, single layer integrated metal, and dual etch stops |
US5869364A (en) * | 1996-07-22 | 1999-02-09 | The United States Of America As Represented By The Secretary Of The Air Force | Single layer integrated metal process for metal semiconductor field effect transistor (MESFET) |
US5796131A (en) * | 1996-07-22 | 1998-08-18 | The United States Of America As Represented By The Secretary Of The Air Force | Metal semiconductor field effect transistor (MESFET) device with single layer integrated metal |
US5976920A (en) * | 1996-07-22 | 1999-11-02 | The United States Of America As Represented By The Secretary Of The Air Force | Single layer integrated metal process for high electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) |
JPH10178024A (ja) * | 1996-12-18 | 1998-06-30 | Matsushita Electric Ind Co Ltd | 電界効果型トランジスタ及びその製造方法 |
JPH10335637A (ja) * | 1997-05-30 | 1998-12-18 | Sony Corp | ヘテロ接合電界効果トランジスタ |
US6066865A (en) * | 1998-04-14 | 2000-05-23 | The United States Of America As Represented By The Secretary Of The Air Force | Single layer integrated metal enhancement mode field-effect transistor apparatus |
US6222210B1 (en) | 1998-04-14 | 2001-04-24 | The United States Of America As Represented By The Secretary Of The Air Force | Complementary heterostructure integrated single metal transistor apparatus |
US6198116B1 (en) | 1998-04-14 | 2001-03-06 | The United States Of America As Represented By The Secretary Of The Air Force | Complementary heterostructure integrated single metal transistor fabrication method |
US6020226A (en) * | 1998-04-14 | 2000-02-01 | The United States Of America As Represented By The Secretary Of The Air Force | Single layer integrated metal process for enhancement mode field-effect transistor |
EP1421626A2 (de) * | 2001-08-07 | 2004-05-26 | Jan Kuzmik | Bauelemente mit hoher elektronenbeweglichkeit |
US7084423B2 (en) | 2002-08-12 | 2006-08-01 | Acorn Technologies, Inc. | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
US6833556B2 (en) | 2002-08-12 | 2004-12-21 | Acorn Technologies, Inc. | Insulated gate field effect transistor having passivated schottky barriers to the channel |
KR100876806B1 (ko) * | 2006-07-20 | 2009-01-07 | 주식회사 하이닉스반도체 | 이중 패터닝 기술을 이용한 반도체 소자의 트랜지스터 형성방법 |
JP2012238809A (ja) * | 2011-05-13 | 2012-12-06 | Sharp Corp | 電界効果トランジスタ |
JP6231730B2 (ja) * | 2011-09-28 | 2017-11-15 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
GB2511245C (en) | 2011-11-23 | 2016-04-27 | Acorn Tech Inc | Improving metal contacts to group IV semiconductors by inserting interfacial atomic monolayers |
US20150372096A1 (en) * | 2014-06-20 | 2015-12-24 | Ishiang Shih | High Electron Mobility Transistors and Integrated Circuits with Improved Feature Uniformity and Reduced defects for Microwave and Millimetre Wave Applications |
KR102248478B1 (ko) | 2014-09-18 | 2021-05-06 | 인텔 코포레이션 | 실리콘 cmos-호환가능 반도체 디바이스들에서의 결함 전파 제어를 위한 경사 측벽 패싯들을 가지는 우르자이트 이종에피택셜 구조체들 |
CN106796952B (zh) | 2014-09-25 | 2020-11-06 | 英特尔公司 | 独立式硅台面上的ⅲ-n族外延器件结构 |
WO2016068935A1 (en) * | 2014-10-30 | 2016-05-06 | Intel Corporation | Source/drain regrowth for low contact resistance to 2d electron gas in gallium nitride transistors |
EP3235005A4 (de) | 2014-12-18 | 2018-09-12 | Intel Corporation | N-kanal-galliumnitrid-transistoren |
US9620611B1 (en) | 2016-06-17 | 2017-04-11 | Acorn Technology, Inc. | MIS contact structure with metal oxide conductor |
US10170627B2 (en) | 2016-11-18 | 2019-01-01 | Acorn Technologies, Inc. | Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height |
US11233053B2 (en) | 2017-09-29 | 2022-01-25 | Intel Corporation | Group III-nitride (III-N) devices with reduced contact resistance and their methods of fabrication |
US12082512B2 (en) | 2019-10-24 | 2024-09-03 | Microsoft Technology Licensing, Llc | Semiconductor-superconductor hybrid device |
IT201900022506A1 (it) * | 2019-11-29 | 2021-05-29 | Univ Pisa | Circuito integrato operante in regime di effetto hall quantistico per ottenere un predeterminato standard di resistenza |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5932902B2 (ja) * | 1980-06-12 | 1984-08-11 | インターナシヨナルビジネス マシーンズ コーポレーシヨン | 半導体オ−ミツク接点 |
US4325181A (en) * | 1980-12-17 | 1982-04-20 | The United States Of America As Represented By The Secretary Of The Navy | Simplified fabrication method for high-performance FET |
JPS5874084A (ja) * | 1981-10-29 | 1983-05-04 | Fujitsu Ltd | 半導体装置 |
JPS59123272A (ja) * | 1982-12-28 | 1984-07-17 | Fujitsu Ltd | 化合物半導体装置 |
JPS60164366A (ja) * | 1984-02-06 | 1985-08-27 | Fujitsu Ltd | 半導体装置 |
JPS60189268A (ja) * | 1984-03-08 | 1985-09-26 | Fujitsu Ltd | 半導体装置 |
-
1988
- 1988-03-17 EP EP88302314A patent/EP0283278B1/de not_active Expired - Lifetime
- 1988-03-17 KR KR1019880002843A patent/KR920006875B1/ko not_active IP Right Cessation
- 1988-03-17 DE DE88302314T patent/DE3881922T2/de not_active Expired - Fee Related
-
1989
- 1989-12-21 US US07/455,853 patent/US4961194A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR920006875B1 (ko) | 1992-08-21 |
EP0283278B1 (de) | 1993-06-23 |
EP0283278A2 (de) | 1988-09-21 |
KR880011902A (ko) | 1988-10-31 |
DE3881922T2 (de) | 1993-10-07 |
US4961194A (en) | 1990-10-02 |
EP0283278A3 (en) | 1989-09-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |