DE3881922D1 - Zusammengesetzte halbleiteranordnung mit nicht-legierten ohmschen kontakten. - Google Patents

Zusammengesetzte halbleiteranordnung mit nicht-legierten ohmschen kontakten.

Info

Publication number
DE3881922D1
DE3881922D1 DE8888302314T DE3881922T DE3881922D1 DE 3881922 D1 DE3881922 D1 DE 3881922D1 DE 8888302314 T DE8888302314 T DE 8888302314T DE 3881922 T DE3881922 T DE 3881922T DE 3881922 D1 DE3881922 D1 DE 3881922D1
Authority
DE
Germany
Prior art keywords
contemporary
alloy
contacts
semiconductor arrangement
composed semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888302314T
Other languages
English (en)
Other versions
DE3881922T2 (de
Inventor
Shigeru Kuroda
Takashi Mimura
Seishi Notomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3881922D1 publication Critical patent/DE3881922D1/de
Publication of DE3881922T2 publication Critical patent/DE3881922T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
DE88302314T 1987-03-18 1988-03-17 Zusammengesetzte Halbleiteranordnung mit nicht-legierten ohmschen Kontakten. Expired - Fee Related DE3881922T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6109787 1987-03-18

Publications (2)

Publication Number Publication Date
DE3881922D1 true DE3881922D1 (de) 1993-07-29
DE3881922T2 DE3881922T2 (de) 1993-10-07

Family

ID=13161237

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88302314T Expired - Fee Related DE3881922T2 (de) 1987-03-18 1988-03-17 Zusammengesetzte Halbleiteranordnung mit nicht-legierten ohmschen Kontakten.

Country Status (4)

Country Link
US (1) US4961194A (de)
EP (1) EP0283278B1 (de)
KR (1) KR920006875B1 (de)
DE (1) DE3881922T2 (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5231040A (en) * 1989-04-27 1993-07-27 Mitsubishi Denki Kabushiki Kaisha Method of making a field effect transistor
JPH02285644A (ja) * 1989-04-27 1990-11-22 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5013685A (en) * 1989-11-02 1991-05-07 At&T Bell Laboratories Method of making a non-alloyed ohmic contact to III-V semiconductors-on-silicon
US5266818A (en) * 1989-11-27 1993-11-30 Kabushiki Kaisha Toshiba Compound semiconductor device having an emitter contact structure including an Inx Ga1 -x As graded-composition layer
US5168330A (en) * 1990-12-03 1992-12-01 Research Triangle Institute Semiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayer
JPH04260338A (ja) * 1991-02-14 1992-09-16 Mitsubishi Electric Corp 半導体装置の製造方法
JPH05198598A (ja) * 1992-01-22 1993-08-06 Mitsubishi Electric Corp 化合物半導体装置及びその製造方法
DE4211052C1 (en) * 1992-04-02 1993-06-03 Siemens Ag, 8000 Muenchen, De Power FET mfr. using angled ion implantation beam - forming asymmetrical insulation zone in contact layer applied to surface of channel layer beneath gate metallisation
JPH0661269A (ja) * 1992-08-11 1994-03-04 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3502651B2 (ja) * 1993-02-08 2004-03-02 トリクイント セミコンダクター テキサス、エルピー 電極形成法
JPH07183493A (ja) * 1993-12-24 1995-07-21 Mitsubishi Electric Corp 半導体装置
JP2606581B2 (ja) * 1994-05-18 1997-05-07 日本電気株式会社 電界効果トランジスタ及びその製造方法
JPH08107216A (ja) * 1994-10-04 1996-04-23 Fujitsu Ltd 半導体装置
JP3036404B2 (ja) * 1995-05-25 2000-04-24 株式会社村田製作所 半導体装置とその製造方法
US5869364A (en) * 1996-07-22 1999-02-09 The United States Of America As Represented By The Secretary Of The Air Force Single layer integrated metal process for metal semiconductor field effect transistor (MESFET)
US5940694A (en) * 1996-07-22 1999-08-17 Bozada; Christopher A. Field effect transistor process with semiconductor mask, single layer integrated metal, and dual etch stops
US5796131A (en) * 1996-07-22 1998-08-18 The United States Of America As Represented By The Secretary Of The Air Force Metal semiconductor field effect transistor (MESFET) device with single layer integrated metal
US5976920A (en) * 1996-07-22 1999-11-02 The United States Of America As Represented By The Secretary Of The Air Force Single layer integrated metal process for high electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT)
US5698870A (en) * 1996-07-22 1997-12-16 The United States Of America As Represented By The Secretary Of The Air Force High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal
US5698900A (en) * 1996-07-22 1997-12-16 The United States Of America As Represented By The Secretary Of The Air Force Field effect transistor device with single layer integrated metal and retained semiconductor masking
JPH10178024A (ja) * 1996-12-18 1998-06-30 Matsushita Electric Ind Co Ltd 電界効果型トランジスタ及びその製造方法
JPH10335637A (ja) * 1997-05-30 1998-12-18 Sony Corp ヘテロ接合電界効果トランジスタ
US6198116B1 (en) 1998-04-14 2001-03-06 The United States Of America As Represented By The Secretary Of The Air Force Complementary heterostructure integrated single metal transistor fabrication method
US6066865A (en) * 1998-04-14 2000-05-23 The United States Of America As Represented By The Secretary Of The Air Force Single layer integrated metal enhancement mode field-effect transistor apparatus
US6020226A (en) * 1998-04-14 2000-02-01 The United States Of America As Represented By The Secretary Of The Air Force Single layer integrated metal process for enhancement mode field-effect transistor
US6222210B1 (en) 1998-04-14 2001-04-24 The United States Of America As Represented By The Secretary Of The Air Force Complementary heterostructure integrated single metal transistor apparatus
WO2003015174A2 (en) * 2001-08-07 2003-02-20 Jan Kuzmik High electron mobility devices
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
KR100876806B1 (ko) * 2006-07-20 2009-01-07 주식회사 하이닉스반도체 이중 패터닝 기술을 이용한 반도체 소자의 트랜지스터 형성방법
JP2012238809A (ja) * 2011-05-13 2012-12-06 Sharp Corp 電界効果トランジスタ
JP6231730B2 (ja) * 2011-09-28 2017-11-15 富士通株式会社 化合物半導体装置及びその製造方法
CN107578994B (zh) 2011-11-23 2020-10-30 阿科恩科技公司 通过插入界面原子单层改进与iv族半导体的金属接触
US20150372096A1 (en) * 2014-06-20 2015-12-24 Ishiang Shih High Electron Mobility Transistors and Integrated Circuits with Improved Feature Uniformity and Reduced defects for Microwave and Millimetre Wave Applications
WO2016043748A1 (en) 2014-09-18 2016-03-24 Intel Corporation Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon cmos-compatible semiconductor devices
KR102203497B1 (ko) 2014-09-25 2021-01-15 인텔 코포레이션 독립형 실리콘 메사들 상의 iii-n 에피택셜 디바이스 구조체들
WO2016068935A1 (en) * 2014-10-30 2016-05-06 Intel Corporation Source/drain regrowth for low contact resistance to 2d electron gas in gallium nitride transistors
US10056456B2 (en) 2014-12-18 2018-08-21 Intel Corporation N-channel gallium nitride transistors
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
DE112017005855T5 (de) 2016-11-18 2019-08-01 Acorn Technologies, Inc. Nanodrahttransistor mit Source und Drain induziert durch elektrische Kontakte mit negativer Schottky-Barrierenhöhe
WO2019066953A1 (en) 2017-09-29 2019-04-04 Intel Corporation REDUCED CONTACT RESISTANCE GROUP III (N-N) NITRIDE DEVICES AND METHODS OF MAKING SAME
IT201900022506A1 (it) * 2019-11-29 2021-05-29 Univ Pisa Circuito integrato operante in regime di effetto hall quantistico per ottenere un predeterminato standard di resistenza

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5932902B2 (ja) * 1980-06-12 1984-08-11 インターナシヨナルビジネス マシーンズ コーポレーシヨン 半導体オ−ミツク接点
US4325181A (en) * 1980-12-17 1982-04-20 The United States Of America As Represented By The Secretary Of The Navy Simplified fabrication method for high-performance FET
JPS5874084A (ja) * 1981-10-29 1983-05-04 Fujitsu Ltd 半導体装置
JPS59123272A (ja) * 1982-12-28 1984-07-17 Fujitsu Ltd 化合物半導体装置
JPS60164366A (ja) * 1984-02-06 1985-08-27 Fujitsu Ltd 半導体装置
JPS60189268A (ja) * 1984-03-08 1985-09-26 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
EP0283278A3 (en) 1989-09-06
DE3881922T2 (de) 1993-10-07
KR920006875B1 (ko) 1992-08-21
US4961194A (en) 1990-10-02
EP0283278A2 (de) 1988-09-21
EP0283278B1 (de) 1993-06-23
KR880011902A (ko) 1988-10-31

Similar Documents

Publication Publication Date Title
DE3881922D1 (de) Zusammengesetzte halbleiteranordnung mit nicht-legierten ohmschen kontakten.
DE3485409D1 (de) Halbleiterschaltvorrichtung.
DE58906492D1 (de) Halbleiterschaltung.
DE3850855T2 (de) Halbleitervorrichtung.
DE3576433D1 (de) Halbleiterspeichervorrichtung.
DE3581773D1 (de) Halbleiterspeichervorrichtung.
DE3585733D1 (de) Halbleiterspeichereinrichtung mit lese-aenderung-schreib-konfiguration.
DE3583897D1 (de) Halbleiterschalter.
DE3584799D1 (de) Halbleitervorrichtung.
DE3885532D1 (de) Halbleiter-Speicherschaltung mit einer Verzögerungsschaltung.
DE3483959D1 (de) Hohlleiterschalter.
DE3881422T2 (de) Fernsprechvorrichtung mit mehreren Funktionen.
DE3581370D1 (de) Halbleitervorrichtung.
DE3889563D1 (de) Halbleiteranordnung mit Schmelzsicherung.
DE3879333T2 (de) Halbleiteranordnung mit mehrschichtleiter.
DE3578722D1 (de) Lichtemittierendes halbleiterelement mit sperrschicht.
DE3582804D1 (de) Lichtemittierende halbleiterschaltung.
DE3779192D1 (de) Ohmsche metall-halbleiter-kontakte.
DE3889570T2 (de) Halbleiterschaltung.
DE3889354D1 (de) Halbleiteranordnung.
DE3586568D1 (de) Halbleitereinrichtung.
DE3586810T2 (de) Halbleiterschaltung.
DE3783507T2 (de) Zusammengesetztes halbleiterbauelement.
DE3581333D1 (de) Lichtemittierende halbleitervorrichtung.
DE3581159D1 (de) Halbleiteranordnung mit integrierter schaltung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee