DE3873337D1 - Aetzverfahren mittels gasplasma. - Google Patents

Aetzverfahren mittels gasplasma.

Info

Publication number
DE3873337D1
DE3873337D1 DE8888905176T DE3873337T DE3873337D1 DE 3873337 D1 DE3873337 D1 DE 3873337D1 DE 8888905176 T DE8888905176 T DE 8888905176T DE 3873337 T DE3873337 T DE 3873337T DE 3873337 D1 DE3873337 D1 DE 3873337D1
Authority
DE
Germany
Prior art keywords
etching process
gas plasma
plasma
gas
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888905176T
Other languages
English (en)
Other versions
DE3873337T2 (de
Inventor
Barbara Charlet
Louise Peccoud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE3873337D1 publication Critical patent/DE3873337D1/de
Application granted granted Critical
Publication of DE3873337T2 publication Critical patent/DE3873337T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
DE8888905176T 1987-06-01 1988-05-31 Aetzverfahren mittels gasplasma. Expired - Fee Related DE3873337T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8707631A FR2616030A1 (fr) 1987-06-01 1987-06-01 Procede de gravure ou de depot par plasma et dispositif pour la mise en oeuvre du procede
PCT/FR1988/000272 WO1988009830A1 (fr) 1987-06-01 1988-05-31 Procede de gravure par plasma gazeux

Publications (2)

Publication Number Publication Date
DE3873337D1 true DE3873337D1 (de) 1992-09-03
DE3873337T2 DE3873337T2 (de) 1993-02-11

Family

ID=9351618

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888905176T Expired - Fee Related DE3873337T2 (de) 1987-06-01 1988-05-31 Aetzverfahren mittels gasplasma.

Country Status (6)

Country Link
US (1) US5047115A (de)
EP (1) EP0359777B1 (de)
JP (1) JPH02503614A (de)
DE (1) DE3873337T2 (de)
FR (1) FR2616030A1 (de)
WO (1) WO1988009830A1 (de)

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DE4007123A1 (de) * 1990-03-07 1991-09-12 Siegfried Dipl Ing Dr Straemke Plasma-behandlungsvorrichtung
FR2665323B1 (fr) * 1990-07-27 1996-09-27 Reydel J Dispositif de production d'un plasma.
DE4034842A1 (de) * 1990-11-02 1992-05-07 Thyssen Edelstahlwerke Ag Verfahren zur plasmachemischen reinigung fuer eine anschliessende pvd oder pecvd beschichtung
US5200232A (en) * 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
US6046425A (en) * 1991-05-31 2000-04-04 Hitachi, Ltd. Plasma processing apparatus having insulator disposed on inner surface of plasma generating chamber
FR2677841B1 (fr) * 1991-06-12 1997-01-10 Air Liquide Reacteur pour depot plasma en phase gazeuse de composes inorganiques sur un substrat polymere.
DE4228551C2 (de) * 1992-08-27 1996-02-22 Linde Ag Verfahren und Anwendung des Verfahrens zur reinigenden Behandlung von Oberflächen mit einem Niederdruckplasma
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
JP3288490B2 (ja) * 1993-07-09 2002-06-04 富士通株式会社 半導体装置の製造方法及び半導体装置の製造装置
DE4339465C2 (de) * 1993-11-19 1997-05-28 Gold Star Electronics Verfahren zur Behandlung der Oberfläche eines einer Trockenätzung ausgesetzten Siliciumsubstrats
JP3365067B2 (ja) * 1994-02-10 2003-01-08 ソニー株式会社 プラズマ装置およびこれを用いたプラズマ処理方法
US5453125A (en) * 1994-02-17 1995-09-26 Krogh; Ole D. ECR plasma source for gas abatement
US5451259A (en) * 1994-02-17 1995-09-19 Krogh; Ole D. ECR plasma source for remote processing
US6110838A (en) * 1994-04-29 2000-08-29 Texas Instruments Incorporated Isotropic polysilicon plus nitride stripping
DE4416057C2 (de) * 1994-05-02 1998-12-03 Hartmann & Braun Gmbh & Co Kg Verfahren zur Herstellung dreidimensionaler Tiefenstrukturen in Siliziumsubstraten
JPH07331460A (ja) * 1994-06-02 1995-12-19 Nippon Telegr & Teleph Corp <Ntt> ドライエッチング方法
US5705080A (en) * 1994-07-06 1998-01-06 Applied Materials, Inc. Plasma-inert cover and plasma cleaning process
US5641375A (en) * 1994-08-15 1997-06-24 Applied Materials, Inc. Plasma etching reactor with surface protection means against erosion of walls
WO1996013621A1 (en) * 1994-10-31 1996-05-09 Krogh Ole D An ecr plasma source
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
JPH08186099A (ja) * 1994-12-29 1996-07-16 Sharp Corp レジストのアッシング方法
US5759360A (en) * 1995-03-13 1998-06-02 Applied Materials, Inc. Wafer clean sputtering process
US6039851A (en) * 1995-03-22 2000-03-21 Micron Technology, Inc. Reactive sputter faceting of silicon dioxide to enhance gap fill of spaces between metal lines
US5866986A (en) * 1996-08-05 1999-02-02 Integrated Electronic Innovations, Inc. Microwave gas phase plasma source
US5915202A (en) * 1997-05-15 1999-06-22 Taiwan Semiconductor Manufacturing Company, Ltd. Blanket etching process for formation of tungsten plugs
US6001268A (en) * 1997-06-05 1999-12-14 International Business Machines Corporation Reactive ion etching of alumina/TiC substrates
US6106683A (en) * 1997-06-23 2000-08-22 Toyo Technologies Inc. Grazing angle plasma polisher (GAPP)
US5935874A (en) * 1998-03-31 1999-08-10 Lam Research Corporation Techniques for forming trenches in a silicon layer of a substrate in a high density plasma processing system
DE19814812C2 (de) * 1998-04-02 2000-05-11 Mut Mikrowellen Umwelt Technol Plasmabrenner mit einem Mikrowellensender
US6191043B1 (en) * 1999-04-20 2001-02-20 Lam Research Corporation Mechanism for etching a silicon layer in a plasma processing chamber to form deep openings
DE19919469A1 (de) * 1999-04-29 2000-11-02 Bosch Gmbh Robert Verfahren zum Plasmaätzen von Silizium
US6372151B1 (en) * 1999-07-27 2002-04-16 Applied Materials, Inc. Storage poly process without carbon contamination
US7014887B1 (en) 1999-09-02 2006-03-21 Applied Materials, Inc. Sequential sputter and reactive precleans of vias and contacts
US6291357B1 (en) 1999-10-06 2001-09-18 Applied Materials, Inc. Method and apparatus for etching a substrate with reduced microloading
US6644324B1 (en) 2000-03-06 2003-11-11 Cymer, Inc. Laser discharge chamber passivation by plasma
US6621660B2 (en) * 2001-01-16 2003-09-16 International Business Machines Corporation Thin film magnetic head
DE10229037A1 (de) * 2002-06-28 2004-01-29 Robert Bosch Gmbh Vorrichtung und Verfahren zur Erzeugung von Chlortrifluorid und Anlage zur Ätzung von Halbleitersubstraten mit dieser Vorrichtung
WO2004064147A2 (en) 2003-01-07 2004-07-29 Applied Materials, Inc. Integration of ald/cvd barriers with porous low k materials
US20040224524A1 (en) * 2003-05-09 2004-11-11 Applied Materials, Inc. Maintaining the dimensions of features being etched on a lithographic mask
DE10331526A1 (de) * 2003-07-11 2005-02-03 Infineon Technologies Ag Verfahren zum anisotropen Ätzen einer Ausnehmung in ein Siliziumsubstrat und Verwendung einer Plasmaätzanlage
JP2006024749A (ja) * 2004-07-08 2006-01-26 Toyo Tanso Kk 炭化珪素単結晶及びそのエッチング方法
US7879510B2 (en) 2005-01-08 2011-02-01 Applied Materials, Inc. Method for quartz photomask plasma etching
US8293430B2 (en) 2005-01-27 2012-10-23 Applied Materials, Inc. Method for etching a molybdenum layer suitable for photomask fabrication
US7790334B2 (en) 2005-01-27 2010-09-07 Applied Materials, Inc. Method for photomask plasma etching using a protected mask
US7829243B2 (en) 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
US7786019B2 (en) 2006-12-18 2010-08-31 Applied Materials, Inc. Multi-step photomask etching with chlorine for uniformity control
EP2235742B1 (de) * 2007-12-21 2020-02-12 Solvay Fluor GmbH Verfahren zur herstellung von mikroelektromechanischen systemen
CN102906864B (zh) * 2010-05-26 2015-05-20 Spp科技股份有限公司 等离子体蚀刻方法
CN114682064B (zh) * 2022-04-08 2023-02-17 武汉大学 一种sf6废气的射频放电降解方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5749234A (en) * 1980-09-08 1982-03-23 Semiconductor Energy Lab Co Ltd Plasma etching method
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
JPS6050923A (ja) * 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
JPS6113625A (ja) * 1984-06-29 1986-01-21 Hitachi Ltd プラズマ処理装置
JPS6148924A (ja) * 1984-08-15 1986-03-10 Nippon Telegr & Teleph Corp <Ntt> 高融点金属のドライエツチング法
US4581100A (en) * 1984-10-29 1986-04-08 International Business Machines Corporation Mixed excitation plasma etching system
JPS61295634A (ja) * 1985-06-25 1986-12-26 Oki Electric Ind Co Ltd ドライエツチング方法
JPS6245122A (ja) * 1985-08-23 1987-02-27 Hitachi Ltd 処理装置

Also Published As

Publication number Publication date
EP0359777B1 (de) 1992-07-29
WO1988009830A1 (fr) 1988-12-15
US5047115A (en) 1991-09-10
EP0359777A1 (de) 1990-03-28
FR2616030A1 (fr) 1988-12-02
JPH02503614A (ja) 1990-10-25
DE3873337T2 (de) 1993-02-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee