DE3855482T2 - Elektronen emittierendes Element und dessen Herstellungsverfahren - Google Patents
Elektronen emittierendes Element und dessen HerstellungsverfahrenInfo
- Publication number
- DE3855482T2 DE3855482T2 DE19883855482 DE3855482T DE3855482T2 DE 3855482 T2 DE3855482 T2 DE 3855482T2 DE 19883855482 DE19883855482 DE 19883855482 DE 3855482 T DE3855482 T DE 3855482T DE 3855482 T2 DE3855482 T2 DE 3855482T2
- Authority
- DE
- Germany
- Prior art keywords
- electron emission
- electrode
- single crystal
- electrodes
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 55
- 239000013078 crystal Substances 0.000 claims description 262
- 239000000463 material Substances 0.000 claims description 238
- 230000008021 deposition Effects 0.000 claims description 200
- 239000000758 substrate Substances 0.000 claims description 159
- 238000000034 method Methods 0.000 claims description 137
- 238000010899 nucleation Methods 0.000 claims description 99
- 230000006911 nucleation Effects 0.000 claims description 99
- 239000004065 semiconductor Substances 0.000 claims description 69
- 239000004020 conductor Substances 0.000 claims description 43
- 239000011810 insulating material Substances 0.000 claims description 31
- 230000015572 biosynthetic process Effects 0.000 claims description 25
- 239000011159 matrix material Substances 0.000 claims description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 12
- 238000000151 deposition Methods 0.000 description 206
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 114
- 239000010408 film Substances 0.000 description 96
- 235000012239 silicon dioxide Nutrition 0.000 description 57
- 229910052681 coesite Inorganic materials 0.000 description 55
- 229910052906 cristobalite Inorganic materials 0.000 description 55
- 239000000377 silicon dioxide Substances 0.000 description 55
- 229910052682 stishovite Inorganic materials 0.000 description 55
- 229910052905 tridymite Inorganic materials 0.000 description 55
- 229910052581 Si3N4 Inorganic materials 0.000 description 51
- 229910052751 metal Inorganic materials 0.000 description 51
- 239000002184 metal Substances 0.000 description 51
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 51
- 239000002585 base Substances 0.000 description 50
- 230000008569 process Effects 0.000 description 41
- 239000010409 thin film Substances 0.000 description 38
- 238000010586 diagram Methods 0.000 description 37
- 230000001965 increasing effect Effects 0.000 description 33
- 230000006870 function Effects 0.000 description 29
- 239000007789 gas Substances 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000000203 mixture Substances 0.000 description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 16
- 239000011295 pitch Substances 0.000 description 16
- 229910052721 tungsten Inorganic materials 0.000 description 16
- 230000000694 effects Effects 0.000 description 15
- 230000015556 catabolic process Effects 0.000 description 14
- 229910052750 molybdenum Inorganic materials 0.000 description 13
- 238000012856 packing Methods 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 10
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 10
- 238000005204 segregation Methods 0.000 description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000010292 electrical insulation Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000002109 crystal growth method Methods 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 238000010884 ion-beam technique Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910003910 SiCl4 Inorganic materials 0.000 description 4
- 229910004014 SiF4 Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 4
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 4
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 3
- 241000769223 Thenea Species 0.000 description 3
- 229910008814 WSi2 Inorganic materials 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 229910052792 caesium Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910003822 SiHCl3 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000002772 conduction electron Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910025794 LaB6 Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- -1 and in particular Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052730 francium Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J3/00—Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
- H01J3/02—Electron guns
- H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
- H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2487287A JP2612564B2 (ja) | 1987-02-06 | 1987-02-06 | マルチ型電子放出素子及びその製造方法 |
| JP2487387A JP2612565B2 (ja) | 1987-02-06 | 1987-02-06 | 電子放出素子及びその製造方法 |
| JP3807587A JP2609602B2 (ja) | 1987-02-23 | 1987-02-23 | 電子放出素子及びその製造方法 |
| JP3807687A JP2612567B2 (ja) | 1987-02-23 | 1987-02-23 | 電子放出素子 |
| JP4781687A JP2609604B2 (ja) | 1987-03-04 | 1987-03-04 | 電子放出方法及び電子放出装置 |
| JP5034487A JP2561263B2 (ja) | 1987-03-06 | 1987-03-06 | 電子放出素子の製造方法 |
| JP5211387A JP2612569B2 (ja) | 1987-03-09 | 1987-03-09 | 電子放出素子 |
| JP6789287A JP2713569B2 (ja) | 1987-03-24 | 1987-03-24 | 電子放出装置 |
| JP7046787A JP2616918B2 (ja) | 1987-03-26 | 1987-03-26 | 表示装置 |
| JP7360187A JP2612571B2 (ja) | 1987-03-27 | 1987-03-27 | 電子放出素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3855482D1 DE3855482D1 (de) | 1996-09-26 |
| DE3855482T2 true DE3855482T2 (de) | 1997-03-20 |
Family
ID=27579773
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19883855482 Expired - Fee Related DE3855482T2 (de) | 1987-02-06 | 1988-02-04 | Elektronen emittierendes Element und dessen Herstellungsverfahren |
| DE19883856492 Expired - Fee Related DE3856492T2 (de) | 1987-02-06 | 1988-02-04 | Ein Elektronenemissionselement enthaltende Anzeigevorrichtung |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19883856492 Expired - Fee Related DE3856492T2 (de) | 1987-02-06 | 1988-02-04 | Ein Elektronenemissionselement enthaltende Anzeigevorrichtung |
Country Status (3)
| Country | Link |
|---|---|
| EP (2) | EP0713241B1 (OSRAM) |
| AU (2) | AU1134388A (OSRAM) |
| DE (2) | DE3855482T2 (OSRAM) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989009479A1 (fr) * | 1988-03-25 | 1989-10-05 | Thomson-Csf | Procede de fabrication de sources d'electrons du type a emission de champ, et son application a la realisation de reseaux d'emetteurs |
| FR2644287B1 (fr) * | 1989-03-10 | 1996-01-26 | Thomson Csf | Procede de realisation de sources d'electrons du type a emission de champ et dispositifs realises a partir desdites sources |
| FR2637126B1 (fr) * | 1988-09-23 | 1992-05-07 | Thomson Csf | Composant tel que diode, triode ou dispositif d'affichage cathodoluminescent plat et integre, et procede de fabrication |
| EP0416558B1 (en) * | 1989-09-04 | 1996-07-31 | Canon Kabushiki Kaisha | Electron emission element and method of manufacturing the same |
| FR2658839B1 (fr) * | 1990-02-23 | 1997-06-20 | Thomson Csf | Procede de croissance controlee de cristaux aciculaires et application a la realisation de microcathodes a pointes. |
| JP2918637B2 (ja) * | 1990-06-27 | 1999-07-12 | 三菱電機株式会社 | 微小真空管及びその製造方法 |
| US5332627A (en) * | 1990-10-30 | 1994-07-26 | Sony Corporation | Field emission type emitter and a method of manufacturing thereof |
| FR2669465B1 (fr) * | 1990-11-16 | 1996-07-12 | Thomson Rech | Source d'electrons et procede de realisation. |
| US5283501A (en) * | 1991-07-18 | 1994-02-01 | Motorola, Inc. | Electron device employing a low/negative electron affinity electron source |
| US5141460A (en) * | 1991-08-20 | 1992-08-25 | Jaskie James E | Method of making a field emission electron source employing a diamond coating |
| US5129850A (en) * | 1991-08-20 | 1992-07-14 | Motorola, Inc. | Method of making a molded field emission electron emitter employing a diamond coating |
| US5619092A (en) * | 1993-02-01 | 1997-04-08 | Motorola | Enhanced electron emitter |
| EP0623944B1 (en) * | 1993-05-05 | 1997-07-02 | AT&T Corp. | Flat panel display apparatus, and method of making same |
| US5514937A (en) * | 1994-01-24 | 1996-05-07 | Motorola | Apparatus and method for compensating electron emission in a field emission device |
| JP3251466B2 (ja) * | 1994-06-13 | 2002-01-28 | キヤノン株式会社 | 複数の冷陰極素子を備えた電子線発生装置、並びにその駆動方法、並びにそれを応用した画像形成装置 |
| JPH0850850A (ja) * | 1994-08-09 | 1996-02-20 | Agency Of Ind Science & Technol | 電界放出型電子放出素子およびその製造方法 |
| JP3311246B2 (ja) | 1995-08-23 | 2002-08-05 | キヤノン株式会社 | 電子発生装置、画像表示装置およびそれらの駆動回路、駆動方法 |
| US5994834A (en) * | 1997-08-22 | 1999-11-30 | Micron Technology, Inc. | Conductive address structure for field emission displays |
| RU2273073C2 (ru) * | 1998-04-30 | 2006-03-27 | ООО "Научно-производственное предприятие "Кристаллы и Технологии" | Стабилизированные и управляемые источники электронов, матричные системы источников электронов и способ их изготовления |
| US20060232191A1 (en) * | 2005-04-15 | 2006-10-19 | Samsung Electronics Co., Ltd. | Gate-controlled electron-emitter array panel, active matrix display including the same, and method of manufacturing the panel |
| US8866068B2 (en) | 2012-12-27 | 2014-10-21 | Schlumberger Technology Corporation | Ion source with cathode having an array of nano-sized projections |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3970887A (en) * | 1974-06-19 | 1976-07-20 | Micro-Bit Corporation | Micro-structure field emission electron source |
| US4168213A (en) * | 1976-04-29 | 1979-09-18 | U.S. Philips Corporation | Field emission device and method of forming same |
| JPS5679828A (en) * | 1979-12-05 | 1981-06-30 | Toshiba Corp | Electron gun |
| DE3133786A1 (de) * | 1981-08-26 | 1983-03-10 | Battelle-Institut E.V., 6000 Frankfurt | Anordnung zur erzeugung von feldemission und verfahren zu ihrer herstellung |
| NL8400297A (nl) * | 1984-02-01 | 1985-09-02 | Philips Nv | Halfgeleiderinrichting voor het opwekken van een elektronenbundel. |
| FR2568394B1 (fr) * | 1984-07-27 | 1988-02-12 | Commissariat Energie Atomique | Dispositif de visualisation par cathodoluminescence excitee par emission de champ |
-
1988
- 1988-02-04 EP EP96100917A patent/EP0713241B1/en not_active Expired - Lifetime
- 1988-02-04 DE DE19883855482 patent/DE3855482T2/de not_active Expired - Fee Related
- 1988-02-04 EP EP19880101626 patent/EP0278405B1/en not_active Expired - Lifetime
- 1988-02-04 DE DE19883856492 patent/DE3856492T2/de not_active Expired - Fee Related
- 1988-02-05 AU AU11343/88A patent/AU1134388A/en not_active Abandoned
-
1991
- 1991-11-11 AU AU87749/91A patent/AU631327B2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| AU8774991A (en) | 1992-01-09 |
| EP0713241B1 (en) | 2001-09-19 |
| EP0278405A3 (en) | 1990-05-16 |
| DE3856492D1 (de) | 2001-10-25 |
| DE3855482D1 (de) | 1996-09-26 |
| EP0713241A2 (en) | 1996-05-22 |
| DE3856492T2 (de) | 2002-10-31 |
| EP0278405A2 (en) | 1988-08-17 |
| AU631327B2 (en) | 1992-11-19 |
| EP0278405B1 (en) | 1996-08-21 |
| AU1134388A (en) | 1988-08-11 |
| EP0713241A3 (OSRAM) | 1996-06-05 |
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| US5176557A (en) | Electron emission element and method of manufacturing the same | |
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