DE69401694T2 - Elektroner emittierende Vorrichtung - Google Patents

Elektroner emittierende Vorrichtung

Info

Publication number
DE69401694T2
DE69401694T2 DE69401694T DE69401694T DE69401694T2 DE 69401694 T2 DE69401694 T2 DE 69401694T2 DE 69401694 T DE69401694 T DE 69401694T DE 69401694 T DE69401694 T DE 69401694T DE 69401694 T2 DE69401694 T2 DE 69401694T2
Authority
DE
Germany
Prior art keywords
type diamond
emitter portion
diamond layer
vacuum
electrons
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69401694T
Other languages
English (en)
Other versions
DE69401694D1 (de
Inventor
Yoshiki Nishibayashi
Tadashi Tomikawa
Shin-Ichi Shikata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69401694D1 publication Critical patent/DE69401694D1/de
Publication of DE69401694T2 publication Critical patent/DE69401694T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30457—Diamond

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Saccharide Compounds (AREA)
  • Electroluminescent Light Sources (AREA)
DE69401694T 1993-09-24 1994-09-21 Elektroner emittierende Vorrichtung Expired - Lifetime DE69401694T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23857193A JP3269065B2 (ja) 1993-09-24 1993-09-24 電子デバイス

Publications (2)

Publication Number Publication Date
DE69401694D1 DE69401694D1 (de) 1997-03-20
DE69401694T2 true DE69401694T2 (de) 1997-05-28

Family

ID=17032205

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69401694T Expired - Lifetime DE69401694T2 (de) 1993-09-24 1994-09-21 Elektroner emittierende Vorrichtung

Country Status (5)

Country Link
US (1) US5552613A (de)
EP (1) EP0645793B1 (de)
JP (1) JP3269065B2 (de)
AT (1) ATE148805T1 (de)
DE (1) DE69401694T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5532177A (en) * 1993-07-07 1996-07-02 Micron Display Technology Method for forming electron emitters
KR100314830B1 (ko) * 1994-07-27 2002-02-28 김순택 전계방출표시장치의제조방법
JPH08180824A (ja) * 1994-12-22 1996-07-12 Hitachi Ltd 電子線源、その製造方法、電子線源装置及びそれを用いた電子線装置
US5703380A (en) * 1995-06-13 1997-12-30 Advanced Vision Technologies Inc. Laminar composite lateral field-emission cathode
KR100405886B1 (ko) * 1995-08-04 2004-04-03 프린터블 필드 에미터스 리미티드 전계전자방출물질과그제조방법및그물질을이용한소자
AU7480796A (en) * 1995-10-30 1997-05-22 Advanced Vision Technologies, Inc. Dual carrier display device and fabrication process
US5831384A (en) * 1995-10-30 1998-11-03 Advanced Vision Technologies, Inc. Dual carrier display device
JP3580930B2 (ja) * 1996-01-18 2004-10-27 住友電気工業株式会社 電子放出装置
US6504311B1 (en) * 1996-03-25 2003-01-07 Si Diamond Technology, Inc. Cold-cathode cathodoluminescent lamp
DE69703962T2 (de) * 1996-03-27 2001-09-13 Matsushita Electric Ind Co Ltd Elektronenemittierende Vorrichtung
US5729094A (en) * 1996-04-15 1998-03-17 Massachusetts Institute Of Technology Energetic-electron emitters
WO1998044529A1 (en) 1996-06-25 1998-10-08 Vanderbilt University Microtip vacuum field emitter structures, arrays, and devices, and methods of fabrication
EP0865065B1 (de) 1997-03-10 2003-09-03 Sumitomo Electric Industries, Ltd. Elektronen-emittierendes Element, Herstellungsverfahren desselben, und Elektronenvorrichtung
JP4792625B2 (ja) * 2000-08-31 2011-10-12 住友電気工業株式会社 電子放出素子の製造方法及び電子デバイス
JP3851861B2 (ja) * 2002-09-20 2006-11-29 財団法人ファインセラミックスセンター 電子放出素子
JP2005310724A (ja) * 2003-05-12 2005-11-04 Sumitomo Electric Ind Ltd 電界放射型電子源およびその製造方法
JP4112449B2 (ja) * 2003-07-28 2008-07-02 株式会社東芝 放電電極及び放電灯
WO2005027172A1 (ja) * 2003-09-16 2005-03-24 Sumitomo Electric Industries, Ltd. ダイヤモンド電子放出素子およびこれを用いた電子線源
JP4765245B2 (ja) * 2003-09-30 2011-09-07 住友電気工業株式会社 電子線源
EP1670016B1 (de) 2003-09-30 2010-12-01 Sumitomo Electric Industries, Ltd. Elektronenemitter
JP4496748B2 (ja) * 2003-09-30 2010-07-07 住友電気工業株式会社 電子放出素子及びそれを用いた電子素子
JP5082186B2 (ja) * 2004-03-29 2012-11-28 住友電気工業株式会社 炭素系材料突起の形成方法及び炭素系材料突起
JP4596451B2 (ja) * 2004-04-19 2010-12-08 住友電気工業株式会社 突起構造の形成方法、突起構造、および電子放出素子
US7863805B2 (en) 2005-06-17 2011-01-04 Sumitomo Electric Industries, Ltd. Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device
JP2006351410A (ja) * 2005-06-17 2006-12-28 Toppan Printing Co Ltd 電子放出素子
JP2010020946A (ja) * 2008-07-09 2010-01-28 Sumitomo Electric Ind Ltd ダイヤモンド電子源
JP5354598B2 (ja) * 2009-12-17 2013-11-27 独立行政法人産業技術総合研究所 電子源

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5283501A (en) * 1991-07-18 1994-02-01 Motorola, Inc. Electron device employing a low/negative electron affinity electron source
US5138237A (en) * 1991-08-20 1992-08-11 Motorola, Inc. Field emission electron device employing a modulatable diamond semiconductor emitter
US5199918A (en) * 1991-11-07 1993-04-06 Microelectronics And Computer Technology Corporation Method of forming field emitter device with diamond emission tips
US5670788A (en) * 1992-01-22 1997-09-23 Massachusetts Institute Of Technology Diamond cold cathode

Also Published As

Publication number Publication date
JPH0794077A (ja) 1995-04-07
EP0645793A3 (de) 1995-09-13
ATE148805T1 (de) 1997-02-15
EP0645793A2 (de) 1995-03-29
US5552613A (en) 1996-09-03
JP3269065B2 (ja) 2002-03-25
EP0645793B1 (de) 1997-02-05
DE69401694D1 (de) 1997-03-20

Similar Documents

Publication Publication Date Title
DE69401694T2 (de) Elektroner emittierende Vorrichtung
DE3563577D1 (en) Semiconductor device for producing an electron beam
SG86360A1 (en) Field emission-type electron source and manufacturing method thereof and display using the electron source
NZ335320A (en) Method and apparatus for vaccum diode-based devices with electride-coated electrodes
SG74751A1 (en) Field emission electron source
EP0535953A3 (de) Mit Feldemission arbeitende elektronische Vorrichtung
ES8106632A1 (es) Un dispositivo de rayos catodicos
US2916668A (en) Heat stabilized field emission electron sources
CA1249011A (en) Semiconductor cathode with increased stability
EP0945884A1 (de) Feldemissionsvorrichtung mit einer Bornitrid-Nanorohr-Elektronenquelle
JPS55158691A (en) Semiconductor light emitting device manufacture thereof
CA1253260A (en) Semiconductor device for generating an electron beam
US20030089912A1 (en) Electron bombardment of wide bandgap semiconductors for generating high brightness and narrow energy spread emission electrons
KR930017055A (ko) 함침형 캐소드의 제조방법
US4596942A (en) Field emission type electron gun
EP0259878A3 (de) Elektronenemittierendes Element
TW373210B (en) Electron tube having a semiconductor cathode
Yeheskel et al. An intense electron beam source
SU391631A1 (ru) Термоэлектронный катод
Ptashchenko Characteristics of Electroluminescene in n+-- nu--n Heterostructures
JPS57139922A (en) Manufacture of semiconductor device
JPS5726464A (en) High frequency and high power bipolar transistor
Kolpakov et al. The Effect of Electron Beam Heating on Alloy Interface Parameters of Metal/Semiconductor Contacts
JPS55107278A (en) Photoelectric conversion device
Silva et al. Modelling of the electron field emission process in polycrystalline diamond-like carbon thin films

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, SCHUMACHER, KNAUER, VON HIRSCHHAUSEN, 8033