DE3855246D1 - Supraleitende dünne Schicht und Verfahren zu ihrer Herstellung - Google Patents

Supraleitende dünne Schicht und Verfahren zu ihrer Herstellung

Info

Publication number
DE3855246D1
DE3855246D1 DE3855246T DE3855246T DE3855246D1 DE 3855246 D1 DE3855246 D1 DE 3855246D1 DE 3855246 T DE3855246 T DE 3855246T DE 3855246 T DE3855246 T DE 3855246T DE 3855246 D1 DE3855246 D1 DE 3855246D1
Authority
DE
Germany
Prior art keywords
production
thin film
superconducting thin
superconducting
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3855246T
Other languages
English (en)
Other versions
DE3855246T2 (de
Inventor
Hideo Itozaki
Saburo Tanaka
Nobuhiko Fujita
Shuji Yazu
Tetsuji Jodai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE3855246D1 publication Critical patent/DE3855246D1/de
Publication of DE3855246T2 publication Critical patent/DE3855246T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • H10N60/0716—Passivating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/93—Electric superconducting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/704—Wire, fiber, or cable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/731—Sputter coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/732—Evaporative coating with superconducting material

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Insulating Materials (AREA)
DE3855246T 1987-07-06 1988-07-06 Supraleitende dünne Schicht und Verfahren zu ihrer Herstellung Expired - Fee Related DE3855246T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP16835787 1987-07-06
JP16835687 1987-07-06
JP17269887 1987-07-10
JP17269687 1987-07-10
JP17269787 1987-07-10
JP17860087 1987-07-17

Publications (2)

Publication Number Publication Date
DE3855246D1 true DE3855246D1 (de) 1996-06-05
DE3855246T2 DE3855246T2 (de) 1996-12-05

Family

ID=27553342

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3855246T Expired - Fee Related DE3855246T2 (de) 1987-07-06 1988-07-06 Supraleitende dünne Schicht und Verfahren zu ihrer Herstellung

Country Status (5)

Country Link
US (3) US5252547A (de)
EP (1) EP0298866B1 (de)
JP (1) JP2567460B2 (de)
CA (1) CA1336149C (de)
DE (1) DE3855246T2 (de)

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US4994435A (en) * 1987-10-16 1991-02-19 The Furukawa Electric Co., Ltd. Laminated layers of a substrate, noble metal, and interlayer underneath an oxide superconductor
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JPH01171247A (ja) * 1987-12-25 1989-07-06 Mitsubishi Metal Corp 超伝導体配線の構造
JPH0286014A (ja) * 1988-06-17 1990-03-27 Sumitomo Electric Ind Ltd 複合酸化物超電導薄膜と、その成膜方法
GB8903731D0 (en) * 1989-02-18 1989-04-05 Univ Manchester Protection of superconductors from degradation
US5021401A (en) * 1989-04-03 1991-06-04 Westinghouse Electric Corp. Integrated production of superconductor insulation for chemical vapor deposition of nickel carbonyl
US5272133A (en) * 1990-11-01 1993-12-21 Hughes Aircraft Company Passivation of thin film oxide superconductors
EP0507539A3 (en) * 1991-04-01 1993-01-27 General Electric Company Method of making oriented dielectric films on metal substrates and articles formed thereby
US5270294A (en) * 1991-12-27 1993-12-14 The United States Of America As Represented By The United States Department Of Energy Free-standing oxide superconducting articles
JPH06302872A (ja) * 1993-04-14 1994-10-28 Sumitomo Electric Ind Ltd 酸化物超電導薄膜上に上層の薄膜を積層する方法
US6365554B1 (en) * 1994-04-29 2002-04-02 American Superconductor Corporation Separating layer for heat treating superconducting wire
US5952270A (en) 1994-04-29 1999-09-14 American Superconductor Corporation Process for heat treating superconductor wire
US6037313A (en) * 1994-09-16 2000-03-14 Sumitomo Electric Industries, Ltd. Method and apparatus for depositing superconducting layer onto the substrate surface via off-axis laser ablation
US5762610A (en) * 1996-07-03 1998-06-09 Colin Corporation Pressure pulse wave detecting apparatus
JP3015740B2 (ja) * 1996-08-12 2000-03-06 株式会社移動体通信先端技術研究所 超伝導薄膜の形成方法
CA2212827C (en) * 1996-08-13 2000-05-09 Takao Nakamura Superconducting film structure comprising oxide superconductor layer and protective layer and method for preparing the same
JP4622020B2 (ja) * 1999-02-26 2011-02-02 住友電気工業株式会社 絶縁被膜を有する酸化物超電導線材およびその製造方法
US6248459B1 (en) * 1999-03-22 2001-06-19 Motorola, Inc. Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon
US6147032A (en) * 1999-05-19 2000-11-14 Trw Inc. Method for indirect Ion implantation of oxide superconductive films
US6693033B2 (en) 2000-02-10 2004-02-17 Motorola, Inc. Method of removing an amorphous oxide from a monocrystalline surface
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6638838B1 (en) 2000-10-02 2003-10-28 Motorola, Inc. Semiconductor structure including a partially annealed layer and method of forming the same
US6673646B2 (en) 2001-02-28 2004-01-06 Motorola, Inc. Growth of compound semiconductor structures on patterned oxide films and process for fabricating same
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
US6693298B2 (en) 2001-07-20 2004-02-17 Motorola, Inc. Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same
US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
US6716545B1 (en) * 2001-11-21 2004-04-06 The Regents Of The University Of California High temperature superconducting composite conductors
US9260780B2 (en) * 2004-03-26 2016-02-16 Tohoku Seiki Industries, Ltd. Process for forming thin film and system for forming thin film
JP5078721B2 (ja) * 2008-04-15 2012-11-21 シャープ株式会社 光学式生体情報測定装置
US20130327634A1 (en) * 2012-06-08 2013-12-12 Chang-Beom Eom Misaligned sputtering systems for the deposition of complex oxide thin films
RU2739459C1 (ru) * 2020-07-09 2020-12-24 Федеральное государственное бюджетное учреждение "Национальный исследовательский центр "Курчатовский институт" Способ формирования тонкой пленки монооксида европия на кремниевой подложке с получением эпитаксиальной гетероструктуры EuO/Si

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US4220959A (en) * 1979-03-23 1980-09-02 Sperry Corporation Josephson tunnel junction with polycrystalline silicon, germanium or silicon-germanium alloy tunneling barrier
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Also Published As

Publication number Publication date
EP0298866B1 (de) 1996-05-01
CA1336149C (en) 1995-07-04
DE3855246T2 (de) 1996-12-05
US5814583A (en) 1998-09-29
EP0298866A2 (de) 1989-01-11
JP2567460B2 (ja) 1996-12-25
EP0298866A3 (en) 1990-11-07
JPH01126205A (ja) 1989-05-18
US6121630A (en) 2000-09-19
US5252547A (en) 1993-10-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee