DE3889989D1 - Supraleitende Dünnschicht und Verfahren zu deren Herstellung. - Google Patents

Supraleitende Dünnschicht und Verfahren zu deren Herstellung.

Info

Publication number
DE3889989D1
DE3889989D1 DE3889989T DE3889989T DE3889989D1 DE 3889989 D1 DE3889989 D1 DE 3889989D1 DE 3889989 T DE3889989 T DE 3889989T DE 3889989 T DE3889989 T DE 3889989T DE 3889989 D1 DE3889989 D1 DE 3889989D1
Authority
DE
Germany
Prior art keywords
production
thin film
superconducting thin
superconducting
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3889989T
Other languages
English (en)
Other versions
DE3889989T2 (de
Inventor
Hideo C O Itami Work O Itozaki
Saburo C O Itami Work O Tanaka
Nobuhiko C O Itami Work Fujita
Shuji C O Itami Work Of S Yazu
Tetsuji C O Itami Work O Jodai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE3889989D1 publication Critical patent/DE3889989D1/de
Publication of DE3889989T2 publication Critical patent/DE3889989T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—After-treatment, e.g. patterning
    • H10N60/0716—Passivation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/157—Doping structures, e.g. doping superlattices, nipi superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H01L31/035263—Doping superlattices, e.g. nipi superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0408—Processes for depositing or forming superconductor layers by sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0576—Processes for depositing or forming superconductor layers characterised by the substrate
    • H10N60/0632—Intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3408—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by specially shaped wells, e.g. triangular
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/93—Electric superconducting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/702—Josephson junction present

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Laminated Bodies (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
DE3889989T 1987-07-17 1988-07-18 Supraleitende Dünnschicht und Verfahren zu deren Herstellung. Expired - Fee Related DE3889989T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17860187 1987-07-17
JP23127487 1987-09-16

Publications (2)

Publication Number Publication Date
DE3889989D1 true DE3889989D1 (de) 1994-07-14
DE3889989T2 DE3889989T2 (de) 1994-12-01

Family

ID=26498735

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3889989T Expired - Fee Related DE3889989T2 (de) 1987-07-17 1988-07-18 Supraleitende Dünnschicht und Verfahren zu deren Herstellung.

Country Status (6)

Country Link
US (1) US5447908A (de)
EP (1) EP0299879B1 (de)
JP (1) JP2664066B2 (de)
DE (1) DE3889989T2 (de)
HK (1) HK73795A (de)
SG (1) SG26394G (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3855246T2 (de) * 1987-07-06 1996-12-05 Sumitomo Electric Industries Supraleitende dünne Schicht und Verfahren zu ihrer Herstellung
JP2557486B2 (ja) * 1987-08-20 1996-11-27 住友電気工業株式会社 超電導セラミックス長尺体の製造方法および超電導セラミックス長尺体
JP2666337B2 (ja) * 1988-03-30 1997-10-22 セイコーエプソン株式会社 高温超伝導体のコンタクト構造
JPH0286014A (ja) * 1988-06-17 1990-03-27 Sumitomo Electric Ind Ltd 複合酸化物超電導薄膜と、その成膜方法
JP2524827B2 (ja) * 1988-11-29 1996-08-14 財団法人生産開発科学研究所 積層薄膜体及びその製造法
JP2830977B2 (ja) * 1989-12-29 1998-12-02 キヤノン株式会社 記録媒体とそれを用いる記録方法及び記録・再生装置
DE19544697C1 (de) * 1995-11-30 1996-07-11 Abb Research Ltd Metall-Keramik-Kompositwerkstoff und Verfahren zu dessen Herstellung
EP0824275B1 (de) * 1996-08-08 2003-12-17 Sumitomo Electric Industries, Limited Verfahren zur Herstellung einer mehrschichtigen Struktur mit einer supraleitenden Oxyddünnschicht
JP3881732B2 (ja) * 1996-10-16 2007-02-14 財団法人国際超電導産業技術研究センター 酸化物超電導体複合体の製造方法
US6136682A (en) * 1997-10-20 2000-10-24 Motorola Inc. Method for forming a conductive structure having a composite or amorphous barrier layer
JP4031732B2 (ja) * 2003-05-26 2008-01-09 京セラ株式会社 静電チャック
US9653398B1 (en) * 2015-12-08 2017-05-16 Northrop Grumman Systems Corporation Non-oxide based dielectrics for superconductor devices
DE102017102377B4 (de) 2017-02-07 2019-08-22 Schott Ag Schutzverglasung, thermisches Prozessaggregat und Verfahren zur Herstellung einer Schutzverglasung
WO2019160572A2 (en) 2017-05-16 2019-08-22 PsiQuantum Corp. Gated superconducting photon detector
WO2019160573A2 (en) 2017-05-16 2019-08-22 PsiQuantum Corp. Superconducting signal amplifier
US10276504B2 (en) 2017-05-17 2019-04-30 Northrop Grumman Systems Corporation Preclean and deposition methodology for superconductor interconnects
WO2018232332A1 (en) * 2017-06-15 2018-12-20 PsiQuantum Corp. Niobium-germanium superconducting photon detector
US10566516B2 (en) 2017-07-28 2020-02-18 PsiQuantum Corp. Photodetector with superconductor nanowire transistor based on interlayer heat transfer
US10374611B2 (en) 2017-10-05 2019-08-06 PsiQuantum Corp. Superconducting logic components
US10461445B2 (en) 2017-11-13 2019-10-29 PsiQuantum Corp. Methods and devices for impedance multiplication
WO2019157077A1 (en) 2018-02-06 2019-08-15 PsiQuantum Corp. Superconducting photon detector
WO2019160871A2 (en) 2018-02-14 2019-08-22 PsiQuantum Corp. Superconducting field-programmable gate array
WO2019213147A1 (en) 2018-05-01 2019-11-07 PsiQuantum Corp. Photon number resolving superconducting detector
US10984857B2 (en) 2018-08-16 2021-04-20 PsiQuantum Corp. Superconductive memory cells and devices
US10573800B1 (en) 2018-08-21 2020-02-25 PsiQuantum Corp. Superconductor-to-insulator devices
US11101215B2 (en) 2018-09-19 2021-08-24 PsiQuantum Corp. Tapered connectors for superconductor circuits
US11719653B1 (en) 2018-09-21 2023-08-08 PsiQuantum Corp. Methods and systems for manufacturing superconductor devices
US10944403B2 (en) 2018-10-27 2021-03-09 PsiQuantum Corp. Superconducting field-programmable gate array
US11289590B1 (en) 2019-01-30 2022-03-29 PsiQuantum Corp. Thermal diode switch
US11569816B1 (en) 2019-04-10 2023-01-31 PsiQuantum Corp. Superconducting switch
US11009387B2 (en) 2019-04-16 2021-05-18 PsiQuantum Corp. Superconducting nanowire single photon detector and method of fabrication thereof
US11380731B1 (en) 2019-09-26 2022-07-05 PsiQuantum Corp. Superconducting device with asymmetric impedance
US11585695B1 (en) 2019-10-21 2023-02-21 PsiQuantum Corp. Self-triaging photon detector

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3932315A (en) * 1974-09-24 1976-01-13 E. I. Du Pont De Nemours & Company Superconductive barium-lead-bismuth oxides
JPS5897880A (ja) * 1981-12-07 1983-06-10 Hitachi Ltd 超電導薄膜機能素子の接続端子用突起電極
JPS60173885A (ja) * 1984-02-18 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> 酸化物超伝導材料およびその製造方法
US4692385A (en) * 1986-04-14 1987-09-08 Materials Development Corporation Triplex article
US4753856A (en) * 1987-01-02 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from silicate esters and metal oxides
DE3810494C2 (de) * 1987-03-27 1998-08-20 Hitachi Ltd Integrierte Halbleiterschaltungseinrichtung mit supraleitender Schicht
US4826808A (en) * 1987-03-27 1989-05-02 Massachusetts Institute Of Technology Preparation of superconducting oxides and oxide-metal composites
US4970197A (en) * 1987-04-22 1990-11-13 Fujikura Ltd. Oxide superconductor
CA1336566C (en) * 1987-05-31 1995-08-08 Naoji Fujimori Superconducting thin film
JPS63318016A (ja) * 1987-06-19 1988-12-26 Tdk Corp 超伝導酸化物セラミクス材料
FR2617645B1 (fr) * 1987-07-03 1989-10-20 Thomson Csf Dispositif en materiau supraconducteur et procede de realisation
JPS6411305A (en) * 1987-07-06 1989-01-13 Sumitomo Electric Industries Superconducting coil and manufacture thereof
US4956335A (en) * 1988-06-20 1990-09-11 Eastman Kodak Company Conductive articles and processes for their preparation
US4965244A (en) * 1988-09-19 1990-10-23 Regents Of The University Of Minnesota CaF2 passivation layers for high temperature superconductors

Also Published As

Publication number Publication date
JPH01163058A (ja) 1989-06-27
EP0299879A2 (de) 1989-01-18
US5447908A (en) 1995-09-05
HK73795A (en) 1995-05-19
JP2664066B2 (ja) 1997-10-15
DE3889989T2 (de) 1994-12-01
EP0299879A3 (en) 1989-08-30
EP0299879B1 (de) 1994-06-08
SG26394G (en) 1995-09-01

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