DE3853351D1 - Siliciumcarbidsperre zwischen einem Siliciumsubstrat und einer Metallschicht. - Google Patents
Siliciumcarbidsperre zwischen einem Siliciumsubstrat und einer Metallschicht.Info
- Publication number
- DE3853351D1 DE3853351D1 DE3853351T DE3853351T DE3853351D1 DE 3853351 D1 DE3853351 D1 DE 3853351D1 DE 3853351 T DE3853351 T DE 3853351T DE 3853351 T DE3853351 T DE 3853351T DE 3853351 D1 DE3853351 D1 DE 3853351D1
- Authority
- DE
- Germany
- Prior art keywords
- metal layer
- silicon
- carbide barrier
- silicon substrate
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 230000004888 barrier function Effects 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62317398A JP2546696B2 (ja) | 1987-12-17 | 1987-12-17 | シリコン炭化層構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3853351D1 true DE3853351D1 (de) | 1995-04-20 |
DE3853351T2 DE3853351T2 (de) | 1995-07-27 |
Family
ID=18087801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3853351T Expired - Fee Related DE3853351T2 (de) | 1987-12-17 | 1988-12-16 | Siliciumcarbidsperre zwischen einem Siliciumsubstrat und einer Metallschicht. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5103285A (de) |
EP (1) | EP0322161B1 (de) |
JP (1) | JP2546696B2 (de) |
KR (1) | KR920008033B1 (de) |
DE (1) | DE3853351T2 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5323343A (en) * | 1989-10-26 | 1994-06-21 | Mitsubishi Denki Kabushiki Kaisha | DRAM device comprising a stacked type capacitor and a method of manufacturing thereof |
JPH0496336A (ja) * | 1990-08-11 | 1992-03-27 | Nec Corp | Mos型半導体装置 |
KR940006689B1 (ko) * | 1991-10-21 | 1994-07-25 | 삼성전자 주식회사 | 반도체장치의 접촉창 형성방법 |
US5307305A (en) * | 1991-12-04 | 1994-04-26 | Rohm Co., Ltd. | Semiconductor device having field effect transistor using ferroelectric film as gate insulation film |
US5397717A (en) * | 1993-07-12 | 1995-03-14 | Motorola, Inc. | Method of fabricating a silicon carbide vertical MOSFET |
JP3045946B2 (ja) * | 1994-05-09 | 2000-05-29 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 半導体デバイスの製造方法 |
US5818071A (en) * | 1995-02-02 | 1998-10-06 | Dow Corning Corporation | Silicon carbide metal diffusion barrier layer |
US5759623A (en) * | 1995-09-14 | 1998-06-02 | Universite De Montreal | Method for producing a high adhesion thin film of diamond on a Fe-based substrate |
JP3305197B2 (ja) * | 1995-09-14 | 2002-07-22 | 株式会社東芝 | 半導体装置 |
JPH11163329A (ja) * | 1997-11-27 | 1999-06-18 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2000058783A (ja) * | 1998-08-06 | 2000-02-25 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6124627A (en) * | 1998-12-03 | 2000-09-26 | Texas Instruments Incorporated | Lateral MOSFET having a barrier between the source/drain region and the channel region using a heterostructure raised source/drain region |
US6531751B1 (en) * | 1998-12-03 | 2003-03-11 | Agere Systems Inc. | Semiconductor device with increased gate insulator lifetime |
JP2001035943A (ja) * | 1999-07-23 | 2001-02-09 | Mitsubishi Electric Corp | 半導体装置および製造方法 |
US6492267B1 (en) * | 2000-02-11 | 2002-12-10 | Micron Technology, Inc. | Low temperature nitride used as Cu barrier layer |
US6417092B1 (en) | 2000-04-05 | 2002-07-09 | Novellus Systems, Inc. | Low dielectric constant etch stop films |
US6764958B1 (en) * | 2000-07-28 | 2004-07-20 | Applied Materials Inc. | Method of depositing dielectric films |
JP3650727B2 (ja) * | 2000-08-10 | 2005-05-25 | Hoya株式会社 | 炭化珪素製造方法 |
US6537733B2 (en) | 2001-02-23 | 2003-03-25 | Applied Materials, Inc. | Method of depositing low dielectric constant silicon carbide layers |
KR100847926B1 (ko) * | 2001-07-02 | 2008-07-22 | 다우 코닝 코포레이션 | 다공성 물질상의 SiC:H 침착에 의해 개선된 금속 장벽거동 |
KR20030020072A (ko) * | 2001-09-01 | 2003-03-08 | 주성엔지니어링(주) | 유니폴라 정전척 |
US6656837B2 (en) * | 2001-10-11 | 2003-12-02 | Applied Materials, Inc. | Method of eliminating photoresist poisoning in damascene applications |
US6528423B1 (en) * | 2001-10-26 | 2003-03-04 | Lsi Logic Corporation | Process for forming composite of barrier layers of dielectric material to inhibit migration of copper from copper metal interconnect of integrated circuit structure into adjacent layer of low k dielectric material |
GB0129567D0 (en) | 2001-12-11 | 2002-01-30 | Trikon Technologies Ltd | Diffusion barrier |
EP1842940A1 (de) * | 2006-04-06 | 2007-10-10 | Interuniversitair Microelektronica Centrum ( Imec) | Verfahren zur Herstellung eines III-Nitridmaterials auf einem Siliziumsubstrat |
WO2009058580A1 (en) * | 2007-10-31 | 2009-05-07 | Bae Systems Information And Electronic Systems Integration Inc. | High-injection heterojunction bipolar transistor |
WO2010147839A2 (en) * | 2009-06-18 | 2010-12-23 | Analog Devices, Inc. | Silicon-rich nitride etch stop layer for vapor hf etching in mems device fabrication |
US9099578B2 (en) | 2012-06-04 | 2015-08-04 | Nusola, Inc. | Structure for creating ohmic contact in semiconductor devices and methods for manufacture |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3794516A (en) * | 1970-12-15 | 1974-02-26 | W Engeler | Method for making high temperature low ohmic contact to silicon |
JPS6271271A (ja) * | 1985-09-24 | 1987-04-01 | Sharp Corp | 炭化珪素半導体の電極構造 |
JP2615390B2 (ja) * | 1985-10-07 | 1997-05-28 | 工業技術院長 | 炭化シリコン電界効果トランジスタの製造方法 |
US4722913A (en) * | 1986-10-17 | 1988-02-02 | Thomson Components-Mostek Corporation | Doped semiconductor vias to contacts |
JPS63136568A (ja) * | 1986-11-27 | 1988-06-08 | Fujitsu Ltd | 半導体装置 |
JP2534525B2 (ja) * | 1987-12-19 | 1996-09-18 | 富士通株式会社 | β−炭化シリコン層の製造方法 |
-
1987
- 1987-12-17 JP JP62317398A patent/JP2546696B2/ja not_active Expired - Lifetime
-
1988
- 1988-12-16 DE DE3853351T patent/DE3853351T2/de not_active Expired - Fee Related
- 1988-12-16 EP EP88311912A patent/EP0322161B1/de not_active Expired - Lifetime
- 1988-12-17 KR KR1019880016837A patent/KR920008033B1/ko not_active IP Right Cessation
- 1988-12-19 US US07/286,611 patent/US5103285A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0322161B1 (de) | 1995-03-15 |
KR890011040A (ko) | 1989-08-12 |
JPH01160055A (ja) | 1989-06-22 |
EP0322161A3 (en) | 1990-01-17 |
EP0322161A2 (de) | 1989-06-28 |
DE3853351T2 (de) | 1995-07-27 |
KR920008033B1 (ko) | 1992-09-21 |
US5103285A (en) | 1992-04-07 |
JP2546696B2 (ja) | 1996-10-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |