DE3852295D1 - Leistungsverteilungssystem durch mehrfachelektroden für plasmareaktoren. - Google Patents

Leistungsverteilungssystem durch mehrfachelektroden für plasmareaktoren.

Info

Publication number
DE3852295D1
DE3852295D1 DE3852295T DE3852295T DE3852295D1 DE 3852295 D1 DE3852295 D1 DE 3852295D1 DE 3852295 T DE3852295 T DE 3852295T DE 3852295 T DE3852295 T DE 3852295T DE 3852295 D1 DE3852295 D1 DE 3852295D1
Authority
DE
Germany
Prior art keywords
power distribution
distribution system
multiple electrodes
plasma reactors
reactors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Revoked
Application number
DE3852295T
Other languages
English (en)
Other versions
DE3852295T2 (de
Inventor
Peter Rose
J Rough
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Linde LLC
Original Assignee
BOC Group Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22264200&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3852295(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by BOC Group Inc filed Critical BOC Group Inc
Application granted granted Critical
Publication of DE3852295D1 publication Critical patent/DE3852295D1/de
Publication of DE3852295T2 publication Critical patent/DE3852295T2/de
Anticipated expiration legal-status Critical
Revoked legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B7/00—Heating by electric discharge
    • H05B7/02—Details
    • H05B7/144—Power supplies specially adapted for heating by electric discharge; Automatic control of power, e.g. by positioning of electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S422/00—Chemical apparatus and process disinfecting, deodorizing, preserving, or sterilizing
    • Y10S422/906—Plasma or ion generation means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
DE3852295T 1987-09-15 1988-09-14 Leistungsverteilungssystem durch mehrfachelektroden für plasmareaktoren. Revoked DE3852295T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/097,592 US4887005A (en) 1987-09-15 1987-09-15 Multiple electrode plasma reactor power distribution system
PCT/US1988/003184 WO1989002695A1 (en) 1987-09-15 1988-09-14 Multiple electrode plasma reactor power distribution system

Publications (2)

Publication Number Publication Date
DE3852295D1 true DE3852295D1 (de) 1995-01-12
DE3852295T2 DE3852295T2 (de) 1995-04-06

Family

ID=22264200

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3852295T Revoked DE3852295T2 (de) 1987-09-15 1988-09-14 Leistungsverteilungssystem durch mehrfachelektroden für plasmareaktoren.

Country Status (6)

Country Link
US (1) US4887005A (de)
EP (1) EP0331718B1 (de)
JP (1) JP2673571B2 (de)
KR (1) KR970002282B1 (de)
DE (1) DE3852295T2 (de)
WO (1) WO1989002695A1 (de)

Families Citing this family (111)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5170098A (en) * 1989-10-18 1992-12-08 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus for use in carrying out the same
JPH04901A (ja) * 1990-04-18 1992-01-06 Mitsubishi Electric Corp プラズマ装置の高周波給電方法及び装置
JP3016821B2 (ja) * 1990-06-15 2000-03-06 東京エレクトロン株式会社 プラズマ処理方法
US5074456A (en) 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US5849136A (en) * 1991-10-11 1998-12-15 Applied Materials, Inc. High frequency semiconductor wafer processing apparatus and method
US5415757A (en) * 1991-11-26 1995-05-16 Leybold Aktiengesellschaft Apparatus for coating a substrate with electrically nonconductive coatings
DE4204999A1 (de) * 1991-11-26 1993-08-26 Leybold Ag Verfahren und vorrichtung zum beschichten eines substrats, insbesondere mit elektrisch nichtleitenden schichten
DE4138794A1 (de) * 1991-11-26 1993-05-27 Leybold Ag Verfahren und vorrichtung zum beschichten eines substrats, insbesondere mit elektrisch nichtleitenden schichten
US5349313A (en) * 1992-01-23 1994-09-20 Applied Materials Inc. Variable RF power splitter
US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
IT1262897B (it) * 1992-03-11 1996-07-22 Proel Tecnologie Spa Generatore di plasma perfezionato e relativo metodo di ionizzazione
DE4237517A1 (de) * 1992-11-06 1994-05-11 Leybold Ag Vorrichtung zum Beschichten eines Substrats, insbesondere mit elektrisch nichtleitenden Schichten
EP0598390B1 (de) * 1992-11-17 1997-10-15 Applied Materials, Inc. Variabler Hochfrequenzleistungsverteiler
AU2003195A (en) 1994-06-21 1996-01-04 Boc Group, Inc., The Improved power distribution for multiple electrode plasma systems using quarter wavelength transmission lines
DE19537212A1 (de) * 1994-10-06 1996-04-11 Leybold Ag Vorrichtung zum Beschichten von Substraten im Vakuum
US5607542A (en) * 1994-11-01 1997-03-04 Applied Materials Inc. Inductively enhanced reactive ion etching
US5494643A (en) * 1995-04-04 1996-02-27 University Of New Mexico Method and apparatus for optimizing control of an immobilized film photoreactor
US5653811A (en) * 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
DE19532100A1 (de) * 1995-08-30 1997-03-06 Leybold Ag Vorrichtung zur Plasmabehandlung von Substraten
US5936352A (en) * 1995-11-28 1999-08-10 Nec Corporation Plasma processing apparatus for producing plasma at low electron temperatures
US5977715A (en) * 1995-12-14 1999-11-02 The Boeing Company Handheld atmospheric pressure glow discharge plasma source
US5976993A (en) * 1996-03-28 1999-11-02 Applied Materials, Inc. Method for reducing the intrinsic stress of high density plasma films
FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
US6162705A (en) 1997-05-12 2000-12-19 Silicon Genesis Corporation Controlled cleavage process and resulting device using beta annealing
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6103599A (en) * 1997-07-25 2000-08-15 Silicon Genesis Corporation Planarizing technique for multilayered substrates
US6143124A (en) 1997-08-22 2000-11-07 Micron Technology, Inc. Apparatus and method for generating a plasma from an electromagnetic field having a lissajous pattern
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
US6228176B1 (en) 1998-02-11 2001-05-08 Silicon Genesis Corporation Contoured platen design for plasma immerson ion implantation
US6051073A (en) * 1998-02-11 2000-04-18 Silicon Genesis Corporation Perforated shield for plasma immersion ion implantation
US6274459B1 (en) 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
US6112697A (en) 1998-02-19 2000-09-05 Micron Technology, Inc. RF powered plasma enhanced chemical vapor deposition reactor and methods
US6395128B2 (en) * 1998-02-19 2002-05-28 Micron Technology, Inc. RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition
JP3697110B2 (ja) * 1998-05-29 2005-09-21 三菱重工業株式会社 プラズマ化学蒸着装置
US6031334A (en) * 1998-06-17 2000-02-29 Primex Technologies, Inc. Method and apparatus for selectively distributing power in a thruster system
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
JP4046207B2 (ja) * 1998-08-06 2008-02-13 株式会社エフオーアイ プラズマ処理装置
US6458723B1 (en) 1999-06-24 2002-10-01 Silicon Genesis Corporation High temperature implant apparatus
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
WO2001011930A2 (en) 1999-08-10 2001-02-15 Silicon Genesis Corporation A cleaving process to fabricate multilayered substrates using low implantation doses
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
US6576202B1 (en) 2000-04-21 2003-06-10 Kin-Chung Ray Chiu Highly efficient compact capacitance coupled plasma reactor/generator and method
US6562684B1 (en) 2000-08-30 2003-05-13 Micron Technology, Inc. Methods of forming dielectric materials
JP3868217B2 (ja) * 2001-02-09 2007-01-17 東京応化工業株式会社 プラズマ処理装置
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
JP2004014904A (ja) * 2002-06-10 2004-01-15 Tokyo Ohka Kogyo Co Ltd 同時放電化装置
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
US8057468B2 (en) 2002-12-17 2011-11-15 Bovie Medical Corporation Method to generate a plasma stream for performing electrosurgery
JP2004288984A (ja) * 2003-03-24 2004-10-14 Sharp Corp 成膜装置及び成膜方法
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
JP4658506B2 (ja) * 2004-03-31 2011-03-23 浩史 滝川 パルスアークプラズマ生成用電源回路及びパルスアークプラズマ処理装置
JP4185483B2 (ja) * 2004-10-22 2008-11-26 シャープ株式会社 プラズマ処理装置
JP4584722B2 (ja) * 2005-01-13 2010-11-24 シャープ株式会社 プラズマ処理装置および同装置により製造された半導体素子
JP2006196681A (ja) * 2005-01-13 2006-07-27 Sharp Corp プラズマ処理装置および同装置により製造された半導体素子
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
US7517437B2 (en) * 2006-03-29 2009-04-14 Applied Materials, Inc. RF powered target for increasing deposition uniformity in sputtering systems
DE102006037038B4 (de) * 2006-08-08 2010-06-24 Siemens Ag Hochfrequenz-Zündvorrichtung für eine Hochfrequenz-Plasmazündung
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
US8268094B2 (en) * 2007-05-09 2012-09-18 Air Products And Chemicals, Inc. Furnace atmosphere activation method and apparatus
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
US7976908B2 (en) * 2008-05-16 2011-07-12 General Electric Company High throughput processes and systems for barrier film deposition and/or encapsulation of optoelectronic devices
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
JP5257936B2 (ja) * 2009-01-22 2013-08-07 シャープ株式会社 プラズマ処理装置およびこれを用いた半導体素子の製造方法
JP5582809B2 (ja) * 2009-02-13 2014-09-03 ワイエス電子工業株式会社 プラズマ発生装置
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
US9649143B2 (en) * 2009-09-23 2017-05-16 Bovie Medical Corporation Electrosurgical system to generate a pulsed plasma stream and method thereof
US8715789B2 (en) * 2009-12-18 2014-05-06 Sub-One Technology, Inc. Chemical vapor deposition for an interior of a hollow article with high aspect ratio
US8795265B2 (en) 2010-01-28 2014-08-05 Bovie Medical Corporation Electrosurgical apparatus to generate a dual plasma stream and method thereof
KR20120002795A (ko) * 2010-07-01 2012-01-09 주성엔지니어링(주) 피딩라인의 차폐수단을 가지는 전원공급수단 및 이를 포함한 기판처리장치
US9387269B2 (en) 2011-01-28 2016-07-12 Bovie Medical Corporation Cold plasma jet hand sanitizer
US20130017315A1 (en) * 2011-07-15 2013-01-17 Applied Materials, Inc. Methods and apparatus for controlling power distribution in substrate processing systems
KR20140085678A (ko) * 2012-12-27 2014-07-08 한국전자통신연구원 레이더용 송수신 모듈 및 그 조립 방법
EP3383290B1 (de) 2015-12-02 2021-04-14 Apyx Medical Corporation Mischen von kaltplasmastrahlen mit atmosphäre
US9721759B1 (en) 2016-04-04 2017-08-01 Aixtron Se System and method for distributing RF power to a plasma source
JP6675260B2 (ja) * 2016-04-27 2020-04-01 東京エレクトロン株式会社 変圧器、プラズマ処理装置、及び、プラズマ処理方法
JP6745134B2 (ja) * 2016-05-12 2020-08-26 東京エレクトロン株式会社 プラズマ処理装置
WO2018016131A1 (ja) * 2016-07-21 2018-01-25 株式会社日立国際電気 プラズマ生成装置、基板処理装置及び半導体装置の製造方法
US10918433B2 (en) 2016-09-27 2021-02-16 Apyx Medical Corporation Devices, systems and methods for enhancing physiological effectiveness of medical cold plasma discharges
EP3367419B1 (de) 2017-02-28 2019-08-14 Meyer Burger (Germany) AG Elektrodeneinheit mit einem internen elektrischen netzwerk zur zuführung von hochfrequenter spannung und trägeranordnung für eine plasmabehandlungsanlage
JP6546369B2 (ja) * 2017-06-27 2019-07-17 キヤノンアネルバ株式会社 プラズマ処理装置
WO2019004185A1 (ja) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 プラズマ処理装置
TWI693863B (zh) * 2017-06-27 2020-05-11 日商佳能安內華股份有限公司 電漿處理裝置
JP6656478B2 (ja) * 2017-06-27 2020-03-04 キヤノンアネルバ株式会社 プラズマ処理装置および方法
WO2019003312A1 (ja) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 プラズマ処理装置
TWI680696B (zh) * 2017-06-27 2019-12-21 日商佳能安內華股份有限公司 電漿處理裝置
TWI690244B (zh) * 2017-06-27 2020-04-01 日商佳能安內華股份有限公司 電漿處理裝置
KR102257134B1 (ko) * 2017-06-27 2021-05-26 캐논 아네르바 가부시키가이샤 플라스마 처리 장치
WO2019004187A1 (ja) * 2017-06-27 2019-01-03 キヤノンアネルバ株式会社 プラズマ処理装置
JP6564556B2 (ja) * 2017-06-27 2019-08-21 キヤノンアネルバ株式会社 プラズマ処理装置
CN114666965A (zh) 2017-06-27 2022-06-24 佳能安内华股份有限公司 等离子体处理装置
WO2019172283A1 (ja) * 2018-03-09 2019-09-12 株式会社村田製作所 高周波回路
WO2020003557A1 (ja) 2018-06-26 2020-01-02 キヤノンアネルバ株式会社 プラズマ処理装置、プラズマ処理方法、プログラムおよびメモリ媒体
DE102019002647A1 (de) * 2019-04-10 2020-10-15 Plasmetrex Gmbh Waferboot und Behandlungsvorrichtung für Wafer
NL2022938B1 (en) * 2019-04-12 2020-10-20 Vitalfluid B V Plasma activated fluid processing system
CN114762078A (zh) * 2019-12-05 2022-07-15 朗姆研究公司 使用变压器实现衬底处理的均匀性的系统和方法
US11348761B2 (en) * 2020-09-04 2022-05-31 Tokyo Electron Limited Impedance matching apparatus and control method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4282077A (en) * 1980-07-03 1981-08-04 General Dynamics, Pomona Division Uniform plasma etching system
FR2497038A1 (fr) * 1980-12-19 1982-06-25 Frager Jean Generateur de courant asservi en puissance, notamment pour processus de decharge dans une atmosphere rarefiee
US4381965A (en) * 1982-01-06 1983-05-03 Drytek, Inc. Multi-planar electrode plasma etching
JPS60206028A (ja) * 1984-03-30 1985-10-17 Hitachi Ltd プラズマ制御装置
JPS61202438A (ja) * 1985-03-06 1986-09-08 Ulvac Corp グロ−放電安定化方法
US4724296A (en) * 1986-02-28 1988-02-09 Morley John R Plasma generator

Also Published As

Publication number Publication date
DE3852295T2 (de) 1995-04-06
KR890702410A (ko) 1989-12-23
EP0331718B1 (de) 1994-11-30
EP0331718A1 (de) 1989-09-13
JPH02501608A (ja) 1990-05-31
WO1989002695A1 (en) 1989-03-23
KR970002282B1 (ko) 1997-02-27
EP0331718A4 (de) 1989-12-28
US4887005A (en) 1989-12-12
JP2673571B2 (ja) 1997-11-05

Similar Documents

Publication Publication Date Title
DE3852295D1 (de) Leistungsverteilungssystem durch mehrfachelektroden für plasmareaktoren.
DE3679854D1 (de) Plasmaaetzreaktor.
DE3688772T2 (de) Optischer Filter für Stromerzeugung.
DE68902832T2 (de) Verteilersystem fuer abwaertsfliessende reaktoren.
DE3581295D1 (de) Plasma-aetzverfahren.
NO854639L (no) Formgitte hydrogelgjenstander.
IT1209677B (it) Gruppo di discarica.
IT207739Z2 (it) Struttura di contenimento particolarmente per piantine orticolo-floreali.
NO875040D0 (no) Selvbaerende elektrode for brenselceller.
NO855324L (no) Elektrisk tilknytning for elektrolyseceller.
IT8419120A0 (it) Complesso di combustibile per reattore nucleare.
DE3670781D1 (de) Elektroentladungbearbeitungselektrode und verfahren zu ihrer herstellung.
IT8620231A0 (it) Attrezzature per il maneggio di parti costruttive.
DE3852095D1 (de) Wiederaufbereitungsanlage für kernbrennstoff.
IT8519887A0 (it) Complesso di controllo per reattori.
DE3854792D1 (de) Plasmareaktor
DE68905695T4 (de) Elektrisches Verbindungssystem für Rechner.
IT8321875V0 (it) Struttura di torretta per innesti elettrici.
IT8523314A0 (it) Cavo elettrico per basse tensioni.
NO862219D0 (no) Krets for elektrisk forbindelse mellom rekker av elektrolyseceller.
NO870466D0 (no) Fremgangsmaate for aa skifte ut elektriske ledninger.
DE69009911D1 (de) Elektrode für Elektroentladungsbearbeitung.
DE3581478D1 (de) Kernkraftwerkssystem.
IT8621524A0 (it) Metodo per collegare condotti multipli.
JPS5771215A (en) Self identifying system for power interruption facility

Legal Events

Date Code Title Description
8363 Opposition against the patent
8331 Complete revocation