JP6564556B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP6564556B2 JP6564556B2 JP2019526922A JP2019526922A JP6564556B2 JP 6564556 B2 JP6564556 B2 JP 6564556B2 JP 2019526922 A JP2019526922 A JP 2019526922A JP 2019526922 A JP2019526922 A JP 2019526922A JP 6564556 B2 JP6564556 B2 JP 6564556B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/42—Balance/unbalance networks
- H03H7/425—Balance-balance networks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Description
本発明の1つの側面は、プラズマ処理装置に係り、前記プラズマ処理装置は、第1入力端子、第2入力端子、第1出力端子および第2出力端子を有するバランと、真空容器と、前記真空容器から絶縁され、前記第1出力端子に電気的に接続された第1電極と、前記真空容器から絶縁され、前記第2出力端子に電気的に接続された第2電極と、を備え、前記第2電極は、前記第1電極を全周にわたって取り囲むように配置されている。
Claims (10)
- 高周波が供給される第1入力端子、接地された第2入力端子、第1出力端子および第2出力端子を有するバランと、
真空容器と、
前記真空容器から絶縁され、前記第1出力端子に電気的に接続された第1電極と、
前記真空容器から絶縁され、前記第2出力端子に電気的に接続された第2電極と、を備え、
前記第2電極は、筒形状を有し、前記第1電極を全周にわたって取り囲むように配置され、前記第1電極および前記第2電極は、同軸構造を構成するように配置され、
前記第1出力端子と前記第1電極とがブロッキングキャパシタを介して電気的に接続され、
前記第2出力端子と前記第2電極とは、キャパシタを介することなく電気的に接続され、前記第2電極は、前記第2入力端子が接地された前記バランを介して接地されている、
前記第1電極は、基板またはターゲットである部材を保持するように構成され、前記筒形状を有する前記第2電極は、内径が前記部材より大きい、
ことを特徴とするプラズマ処理装置。 - 前記第1電極は、前記部材を保持する面を有する円柱形状を有する、
ことを特徴とする請求項1に記載のプラズマ処理装置。 - 前記第1電極と前記第2電極との距離がデバイ長以下である、
ことを特徴とする請求項1又は2に記載のプラズマ処理装置。 - 前記真空容器は、接地された部分を含む、
ことを特徴とする請求項1乃至3のいずれか1項に記載のプラズマ処理装置。 - 前記第1電極は、カソードであり、前記第2電極は、アノードである、
ことを特徴とする請求項1乃至4のいずれか1項に記載のプラズマ処理装置。 - 前記第1電極と前記第2電極との間のインピーダンスが前記第1電極と前記真空容器との間のインピーダンスより小さい、
ことを特徴とする請求項1乃至5のいずれか1項に記載のプラズマ処理装置。 - 前記部材の表面にセルフバイアス電位が発生する、
ことを特徴とする請求項1に記載のプラズマ処理装置。 - 前記第1電極は、基板を保持し、
前記プラズマ処理装置は、前記第1電極によって保持される基板をエッチングするエッチング装置として構成されている、
ことを特徴とする請求項1乃至7のいずれか1項に記載のプラズマ処理装置。 - 基板を保持する基板保持部を更に備え、前記第1電極および前記第2電極は、前記基板保持部によって保持される前記基板の側の空間に対向するように配置され、
前記第1電極は、ターゲットを保持し、
前記プラズマ処理装置は、前記ターゲットのスパッタリングによって前記基板に膜を形成するスパッタリング装置として構成されている、
ことを特徴とする請求項1乃至7のいずれか1項に記載のプラズマ処理装置。 - 高周波電源と、
前記高周波電源と前記バランとの間に配置されたインピーダンス整合回路と、
を更に備えることを特徴とする請求項1乃至9のいずれか1項に記載のプラズマ処理装置。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2017/023611 WO2019003312A1 (ja) | 2017-06-27 | 2017-06-27 | プラズマ処理装置 |
PCT/JP2017/023603 WO2019003309A1 (ja) | 2017-06-27 | 2017-06-27 | プラズマ処理装置 |
JPPCT/JP2017/023603 | 2017-06-27 | ||
JPPCT/JP2017/023611 | 2017-06-27 | ||
JP2018017549 | 2018-02-02 | ||
JP2018017549 | 2018-02-02 | ||
PCT/JP2018/024145 WO2019004183A1 (ja) | 2017-06-27 | 2018-06-26 | プラズマ処理装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2019100707A Division JP6714127B2 (ja) | 2017-06-27 | 2019-05-29 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
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JP6564556B2 true JP6564556B2 (ja) | 2019-08-21 |
JPWO2019004183A1 JPWO2019004183A1 (ja) | 2019-11-07 |
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JP2019526922A Active JP6564556B2 (ja) | 2017-06-27 | 2018-06-26 | プラズマ処理装置 |
JP2019100707A Active JP6714127B2 (ja) | 2017-06-27 | 2019-05-29 | プラズマ処理装置 |
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Country Status (9)
Country | Link |
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US (1) | US20200126763A1 (ja) |
EP (1) | EP3648553B1 (ja) |
JP (2) | JP6564556B2 (ja) |
KR (1) | KR102327136B1 (ja) |
CN (1) | CN110800378B (ja) |
PL (1) | PL3648553T3 (ja) |
SG (1) | SG11201912655XA (ja) |
TW (1) | TWI677907B (ja) |
WO (1) | WO2019004183A1 (ja) |
Families Citing this family (6)
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JP6280677B1 (ja) * | 2017-06-27 | 2018-02-14 | キヤノンアネルバ株式会社 | プラズマ処理装置 |
JP6595002B2 (ja) | 2017-06-27 | 2019-10-23 | キヤノンアネルバ株式会社 | スパッタリング装置 |
EP4017223A1 (en) * | 2017-06-27 | 2022-06-22 | Canon Anelva Corporation | Plasma processing apparatus |
KR102361377B1 (ko) * | 2017-06-27 | 2022-02-10 | 캐논 아네르바 가부시키가이샤 | 플라스마 처리 장치 |
KR102439024B1 (ko) * | 2018-06-26 | 2022-09-02 | 캐논 아네르바 가부시키가이샤 | 플라스마 처리 장치, 플라스마 처리 방법, 프로그램, 및 메모리 매체 |
US11535532B1 (en) * | 2020-07-17 | 2022-12-27 | Dmitry Medvedev | System and method of water purification and hydrogen peroxide generation by plasma |
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2018
- 2018-06-26 WO PCT/JP2018/024145 patent/WO2019004183A1/ja unknown
- 2018-06-26 KR KR1020207001383A patent/KR102327136B1/ko active IP Right Grant
- 2018-06-26 EP EP18823378.7A patent/EP3648553B1/en active Active
- 2018-06-26 SG SG11201912655XA patent/SG11201912655XA/en unknown
- 2018-06-26 PL PL18823378T patent/PL3648553T3/pl unknown
- 2018-06-26 JP JP2019526922A patent/JP6564556B2/ja active Active
- 2018-06-26 TW TW107121808A patent/TWI677907B/zh active
- 2018-06-26 CN CN201880042477.2A patent/CN110800378B/zh active Active
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2019
- 2019-05-29 JP JP2019100707A patent/JP6714127B2/ja active Active
- 2019-12-19 US US16/720,087 patent/US20200126763A1/en active Pending
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TW201905972A (zh) | 2019-02-01 |
WO2019004183A1 (ja) | 2019-01-03 |
EP3648553A4 (en) | 2020-06-24 |
EP3648553A1 (en) | 2020-05-06 |
KR102327136B1 (ko) | 2021-11-15 |
CN110800378A (zh) | 2020-02-14 |
PL3648553T3 (pl) | 2021-09-13 |
JP6714127B2 (ja) | 2020-06-24 |
CN110800378B (zh) | 2021-12-28 |
US20200126763A1 (en) | 2020-04-23 |
TWI677907B (zh) | 2019-11-21 |
SG11201912655XA (en) | 2020-01-30 |
EP3648553B1 (en) | 2021-05-19 |
KR20200018656A (ko) | 2020-02-19 |
JPWO2019004183A1 (ja) | 2019-11-07 |
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