DE3782808D1 - Halbleiterspeicheranordnung mit einem bitspaltenhochziehungsbetrieb. - Google Patents

Halbleiterspeicheranordnung mit einem bitspaltenhochziehungsbetrieb.

Info

Publication number
DE3782808D1
DE3782808D1 DE8787310634T DE3782808T DE3782808D1 DE 3782808 D1 DE3782808 D1 DE 3782808D1 DE 8787310634 T DE8787310634 T DE 8787310634T DE 3782808 T DE3782808 T DE 3782808T DE 3782808 D1 DE3782808 D1 DE 3782808D1
Authority
DE
Germany
Prior art keywords
bit
semiconductor memory
memory arrangement
split roll
split
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787310634T
Other languages
English (en)
Other versions
DE3782808T2 (de
Inventor
Shoichiro Kawashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE3782808D1 publication Critical patent/DE3782808D1/de
Application granted granted Critical
Publication of DE3782808T2 publication Critical patent/DE3782808T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
DE8787310634T 1986-12-06 1987-12-03 Halbleiterspeicheranordnung mit einem bitspaltenhochziehungsbetrieb. Expired - Fee Related DE3782808T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61289756A JPS63144488A (ja) 1986-12-06 1986-12-06 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE3782808D1 true DE3782808D1 (de) 1993-01-07
DE3782808T2 DE3782808T2 (de) 1993-04-01

Family

ID=17747348

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787310634T Expired - Fee Related DE3782808T2 (de) 1986-12-06 1987-12-03 Halbleiterspeicheranordnung mit einem bitspaltenhochziehungsbetrieb.

Country Status (4)

Country Link
EP (1) EP0271283B1 (de)
JP (1) JPS63144488A (de)
KR (1) KR910008942B1 (de)
DE (1) DE3782808T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0268796A (ja) * 1988-09-02 1990-03-08 Fujitsu Ltd 半導体記憶装置
JPH02198097A (ja) * 1989-01-25 1990-08-06 Nec Ic Microcomput Syst Ltd 半導体スタチックメモリ
US5305268A (en) * 1990-12-13 1994-04-19 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with column equilibrate on change of data during a write cycle
US5297090A (en) * 1990-12-13 1994-03-22 Sgs-Thomson Microelectronics, Inc. Semiconductor memory with column decoded bit line equilibrate
US5267197A (en) * 1990-12-13 1993-11-30 Sgs-Thomson Microelectronics, Inc. Read/write memory having an improved write driver
KR19990064747A (ko) 1999-05-06 1999-08-05 이종구 Ｎｉ-Ｆｅ 합금 박판 제조방법 및 그 장치
KR100365747B1 (ko) * 2000-08-31 2002-12-26 주식회사 하이닉스반도체 반도체 메모리 장치
JP2003257180A (ja) * 2002-03-04 2003-09-12 Nec Electronics Corp ＤＲＡＭ（ＤｙｎａｍｉｃＲａｎｄｏｍＡｃｃｅｓｓＭｅｍｏｒｙ）及びその動作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3638039A (en) * 1970-09-18 1972-01-25 Rca Corp Operation of field-effect transistor circuits having substantial distributed capacitance
JPS6055913B2 (ja) * 1978-10-06 1985-12-07 株式会社日立製作所 Ｍｉｓメモリ回路
JPS5634184A (en) * 1979-08-24 1981-04-06 Hitachi Ltd Semiconductor memory
JPS60234292A (ja) * 1984-05-07 1985-11-20 Hitachi Ltd Ｍｏｓスタテイツク型ｒａｍ
JPS6151692A (ja) * 1984-08-22 1986-03-14 Hitachi Ltd 記憶装置

Also Published As

Publication number Publication date
EP0271283A2 (de) 1988-06-15
KR910008942B1 (ko) 1991-10-26
EP0271283B1 (de) 1992-11-25
KR890010910A (ko) 1989-07-12
EP0271283A3 (en) 1989-09-06
JPS63144488A (ja) 1988-06-16
DE3782808T2 (de) 1993-04-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee