DE3780743D1 - Verfahren zum erzeugen von kontaktloechern durch siliziumnitrid und polyimid. - Google Patents
Verfahren zum erzeugen von kontaktloechern durch siliziumnitrid und polyimid.Info
- Publication number
- DE3780743D1 DE3780743D1 DE8787113825T DE3780743T DE3780743D1 DE 3780743 D1 DE3780743 D1 DE 3780743D1 DE 8787113825 T DE8787113825 T DE 8787113825T DE 3780743 T DE3780743 T DE 3780743T DE 3780743 D1 DE3780743 D1 DE 3780743D1
- Authority
- DE
- Germany
- Prior art keywords
- polyimide
- silicon nitride
- contact holes
- producing contact
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004642 Polyimide Substances 0.000 title 1
- 229910052581 Si3N4 Inorganic materials 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229920001721 polyimide Polymers 0.000 title 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US91735086A | 1986-10-09 | 1986-10-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3780743D1 true DE3780743D1 (de) | 1992-09-03 |
DE3780743T2 DE3780743T2 (de) | 1993-03-11 |
Family
ID=25438667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787113825T Expired - Fee Related DE3780743T2 (de) | 1986-10-09 | 1987-09-22 | Verfahren zum erzeugen von kontaktloechern durch siliziumnitrid und polyimid. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4978419A (de) |
EP (1) | EP0263348B1 (de) |
JP (1) | JPS63104425A (de) |
DE (1) | DE3780743T2 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0410420A (ja) * | 1990-04-26 | 1992-01-14 | Sanyo Electric Co Ltd | 半導体集積回路の製造方法 |
FR2671909B1 (fr) * | 1991-01-17 | 1999-01-22 | Alcatel Nv | Procede de lithogravure sur saillie notamment sur substrat semiconducteur. |
US5245213A (en) * | 1991-10-10 | 1993-09-14 | Sgs-Thomson Microelectronics, Inc. | Planarized semiconductor product |
KR940008323B1 (ko) * | 1991-10-16 | 1994-09-12 | 삼성전자 주식회사 | 반도체장치의 층간접속방법 |
US5266530A (en) * | 1991-11-08 | 1993-11-30 | Bell Communications Research, Inc. | Self-aligned gated electron field emitter |
JPH05234965A (ja) * | 1992-02-21 | 1993-09-10 | Sony Corp | コンタクトホールの形成方法 |
US5543335A (en) * | 1993-05-05 | 1996-08-06 | Ixys Corporation | Advanced power device process for low drop |
GB2279804A (en) * | 1993-07-02 | 1995-01-11 | Plessey Semiconductors Ltd | Insulating layers for multilayer wiring |
US5747375A (en) * | 1993-07-22 | 1998-05-05 | Sanyo Electric Co., Ltd. | Method of manufacturing a semiconductor integrated circuit device |
GB9414362D0 (en) * | 1994-07-15 | 1994-09-07 | Plessey Semiconductors Ltd | Trimmable capacitor |
KR0179838B1 (ko) * | 1995-09-02 | 1999-04-15 | 문정환 | 반도체 소자의 절연막 구조 및 절연막 평탄화 방법 |
JPH09306901A (ja) * | 1996-05-17 | 1997-11-28 | Nec Corp | 半導体装置の製造方法 |
KR100226749B1 (ko) * | 1997-04-24 | 1999-10-15 | 구본준 | 반도체 소자의 제조 방법 |
US5976987A (en) * | 1997-10-03 | 1999-11-02 | Vlsi Technology, Inc. | In-situ corner rounding during oxide etch for improved plug fill |
US6423907B1 (en) * | 1998-02-09 | 2002-07-23 | Tessera, Inc. | Components with releasable leads |
US6965165B2 (en) * | 1998-12-21 | 2005-11-15 | Mou-Shiung Lin | Top layers of metal for high performance IC's |
JP3387478B2 (ja) * | 1999-06-30 | 2003-03-17 | セイコーエプソン株式会社 | 半導体装置およびその製造方法 |
JP3847068B2 (ja) * | 2000-09-11 | 2006-11-15 | アルプス電気株式会社 | 薄膜磁気ヘッド及びその製造方法 |
KR20090036153A (ko) * | 2001-05-11 | 2009-04-13 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 | 후막 포토레지스트 및 그의 사용방법 |
US6645848B2 (en) | 2001-06-01 | 2003-11-11 | Emcore Corporation | Method of improving the fabrication of etched semiconductor devices |
US20040171260A1 (en) * | 2002-06-14 | 2004-09-02 | Lam Research Corporation | Line edge roughness control |
US7547635B2 (en) * | 2002-06-14 | 2009-06-16 | Lam Research Corporation | Process for etching dielectric films with improved resist and/or etch profile characteristics |
DE10241990B4 (de) * | 2002-09-11 | 2006-11-09 | Infineon Technologies Ag | Verfahren zur Strukturierung von Schichten auf Halbleiterbauelementen |
JP2008300557A (ja) * | 2007-05-30 | 2008-12-11 | Mitsubishi Electric Corp | 半導体装置 |
US8039356B2 (en) | 2010-01-20 | 2011-10-18 | International Business Machines Corporation | Through silicon via lithographic alignment and registration |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4367119A (en) * | 1980-08-18 | 1983-01-04 | International Business Machines Corporation | Planar multi-level metal process with built-in etch stop |
EP0057738B1 (de) * | 1981-02-07 | 1986-10-15 | Ibm Deutschland Gmbh | Verfahren zum Herstellen und Füllen von Löchern in einer auf einem Substrat aufliegenden Schicht |
US4423547A (en) * | 1981-06-01 | 1984-01-03 | International Business Machines Corporation | Method for forming dense multilevel interconnection metallurgy for semiconductor devices |
JPS58140139A (ja) * | 1982-02-16 | 1983-08-19 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US4447290A (en) * | 1982-06-10 | 1984-05-08 | Intel Corporation | CMOS Process with unique plasma etching step |
JPS59149025A (ja) * | 1983-02-16 | 1984-08-25 | Hitachi Ltd | 半導体装置の製造法 |
US4497684A (en) * | 1983-02-22 | 1985-02-05 | Amdahl Corporation | Lift-off process for depositing metal on a substrate |
JPS59214240A (ja) * | 1983-05-09 | 1984-12-04 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS601846A (ja) * | 1983-06-18 | 1985-01-08 | Toshiba Corp | 多層配線構造の半導体装置とその製造方法 |
US4430153A (en) * | 1983-06-30 | 1984-02-07 | International Business Machines Corporation | Method of forming an RIE etch barrier by in situ conversion of a silicon containing alkyl polyamide/polyimide |
US4495220A (en) * | 1983-10-07 | 1985-01-22 | Trw Inc. | Polyimide inter-metal dielectric process |
US4487652A (en) * | 1984-03-30 | 1984-12-11 | Motorola, Inc. | Slope etch of polyimide |
US4519872A (en) * | 1984-06-11 | 1985-05-28 | International Business Machines Corporation | Use of depolymerizable polymers in the fabrication of lift-off structure for multilevel metal processes |
US4523976A (en) * | 1984-07-02 | 1985-06-18 | Motorola, Inc. | Method for forming semiconductor devices |
JPS6237945A (ja) * | 1985-08-13 | 1987-02-18 | Toshiba Corp | 半導体装置の製造方法 |
US4758306A (en) * | 1987-08-17 | 1988-07-19 | International Business Machines Corporation | Stud formation method optimizing insulator gap-fill and metal hole-fill |
-
1987
- 1987-08-20 JP JP62205336A patent/JPS63104425A/ja active Pending
- 1987-09-22 EP EP87113825A patent/EP0263348B1/de not_active Expired
- 1987-09-22 DE DE8787113825T patent/DE3780743T2/de not_active Expired - Fee Related
-
1988
- 1988-05-31 US US07/205,009 patent/US4978419A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0263348B1 (de) | 1992-07-29 |
JPS63104425A (ja) | 1988-05-09 |
DE3780743T2 (de) | 1993-03-11 |
EP0263348A3 (en) | 1988-10-05 |
US4978419A (en) | 1990-12-18 |
EP0263348A2 (de) | 1988-04-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3780743D1 (de) | Verfahren zum erzeugen von kontaktloechern durch siliziumnitrid und polyimid. | |
DE3688725D1 (de) | Verfahren und vorrichtung zum herstellen von feinkoernigem siliciummonoxid. | |
DE3850926D1 (de) | Verfahren und Apparatur zum Prüfen von Halbleiter-Elementen. | |
DE69015511D1 (de) | Verfahren und Vorrichtung zum Verbinden von Halbleitersubstraten. | |
DE3770239D1 (de) | Mundstueck und verfahren zum herstellen von diesem. | |
DE3769033D1 (de) | Verfahren und vorrichtung zum gesteuerten richtbohren von bohrungen. | |
DE3850624D1 (de) | Verfahren zum Herstellen von Halbleiterkontakten. | |
DE3769325D1 (de) | Verfahren und vorrichtung zum separieren von blutbestandteilen. | |
DE69012438D1 (de) | Verfahren zum Herstellen einer Unebenheit auf einer Halbleiterchip-Elektrode und Apparat zur Anwendung dafür. | |
DE3773770D1 (de) | Verfahren und vorrichtung zum behandeln von oberflaechen. | |
DE3789074D1 (de) | Verfahren und Vorrichtung zum Kodieren/Übertragen von Bildern. | |
DE3684676D1 (de) | Verfahren zum herstellen von halbleitersubstraten. | |
DE3485301D1 (de) | Verfahren und vorrichtung zum kaltverformen von loechern. | |
DE69009259D1 (de) | Verfahren zum Zusammensetzen von Halbleiteranordnungen. | |
DE3874892D1 (de) | Verfahren und einrichtung zum ausrichten von siliciumplaettchen. | |
DE3772490D1 (de) | Halbleiteranordnung sowie verfahren zum herstellen und testen derselben. | |
DE3769837D1 (de) | Verfahren und apparat zum testen von halbleiterelementen. | |
DE3784605D1 (de) | Verfahren zum herstellen einer halbleitervorrichtung und halbleitervorrichtung. | |
DE3784111D1 (de) | Verfahren und geraet zum testen von wandlern. | |
DE3771416D1 (de) | Verfahren und vorrichtung zum mikroloeten. | |
DE3775645D1 (de) | Verfahren und vorrichtung zum reinigen von gold. | |
DE3578266D1 (de) | Verfahren zum herstellen von halbleiteranordnungen und dadurch hergestellte anordnungen. | |
DE3861296D1 (de) | Verfahren und vorrichtung zum betrieb von wirbelschicht-reaktoren. | |
DE3776821D1 (de) | Vorrichtung und verfahren zum beschichten. | |
ATE46186T1 (de) | Verfahren und vorrichtung zum schaeumen von bitumen. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |