DE3777466D1 - Verfahren zum bedecken einer anordnung mit einer ersten schicht aus siliconnitrid und mit einer zweiten schicht aus einem polyimid und eine nach diesem verfahren bedeckte anordnung. - Google Patents

Verfahren zum bedecken einer anordnung mit einer ersten schicht aus siliconnitrid und mit einer zweiten schicht aus einem polyimid und eine nach diesem verfahren bedeckte anordnung.

Info

Publication number
DE3777466D1
DE3777466D1 DE8787200672T DE3777466T DE3777466D1 DE 3777466 D1 DE3777466 D1 DE 3777466D1 DE 8787200672 T DE8787200672 T DE 8787200672T DE 3777466 T DE3777466 T DE 3777466T DE 3777466 D1 DE3777466 D1 DE 3777466D1
Authority
DE
Germany
Prior art keywords
layer
arrangement
polyimide
covering
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787200672T
Other languages
English (en)
Inventor
Johannes Jacobus Ponjee
Wilhelmus Franciscus M Gootzen
Fredericus Johannes Touwslager
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3777466D1 publication Critical patent/DE3777466D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE8787200672T 1986-04-23 1987-04-09 Verfahren zum bedecken einer anordnung mit einer ersten schicht aus siliconnitrid und mit einer zweiten schicht aus einem polyimid und eine nach diesem verfahren bedeckte anordnung. Expired - Lifetime DE3777466D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8601041A NL8601041A (nl) 1986-04-23 1986-04-23 Werkwijze voor het vervaardigen van een inrichting en inrichting vervaardigd met de werkwijze.

Publications (1)

Publication Number Publication Date
DE3777466D1 true DE3777466D1 (de) 1992-04-23

Family

ID=19847925

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787200672T Expired - Lifetime DE3777466D1 (de) 1986-04-23 1987-04-09 Verfahren zum bedecken einer anordnung mit einer ersten schicht aus siliconnitrid und mit einer zweiten schicht aus einem polyimid und eine nach diesem verfahren bedeckte anordnung.

Country Status (4)

Country Link
EP (1) EP0251347B1 (de)
JP (1) JP2529685B2 (de)
DE (1) DE3777466D1 (de)
NL (1) NL8601041A (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000043439A1 (fr) * 1999-01-21 2000-07-27 Asahi Kasei Kabushiki Kaisha Ester d'acide polyamique
US6350397B1 (en) 1999-03-10 2002-02-26 Aspen Research Corporation Optical member with layer having a coating geometry and composition that enhance cleaning properties
JP2001284499A (ja) * 2000-03-09 2001-10-12 Lucent Technol Inc 半導体デバイスとその製造方法
US20040150096A1 (en) 2003-02-03 2004-08-05 International Business Machines Corporation Capping coating for 3D integration applications
US7850836B2 (en) * 2005-11-09 2010-12-14 Nanyang Technological University Method of electro-depositing a conductive material in at least one through-hole via of a semiconductor substrate
JP5920353B2 (ja) * 2011-09-27 2016-05-18 日立化成株式会社 窒化ホウ素物粒子、エポキシ樹脂組成物、半硬化樹脂組成物、硬化樹脂組成物、樹脂シート、発熱性電子部品及び窒化ホウ素粒子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2541624C2 (de) * 1975-09-18 1982-09-16 Ibm Deutschland Gmbh, 7000 Stuttgart Wässrige Ätzlösung und Verfahren zum Ätzen von Polymerfilmen oder Folien auf Polyimidbasis
US4330569A (en) * 1979-05-25 1982-05-18 Ncr Corporation Method for conditioning nitride surface
US4329419A (en) * 1980-09-03 1982-05-11 E. I. Du Pont De Nemours And Company Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors
NL8203980A (nl) * 1982-10-15 1984-05-01 Philips Nv Werkwijze voor de fotolithografische behandeling van een substraat.

Also Published As

Publication number Publication date
EP0251347A1 (de) 1988-01-07
NL8601041A (nl) 1987-11-16
JPS62254431A (ja) 1987-11-06
EP0251347B1 (de) 1992-03-18
JP2529685B2 (ja) 1996-08-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee