DE3773663D1 - Statischer halbleiterspeicher. - Google Patents

Statischer halbleiterspeicher.

Info

Publication number
DE3773663D1
DE3773663D1 DE8787118814T DE3773663T DE3773663D1 DE 3773663 D1 DE3773663 D1 DE 3773663D1 DE 8787118814 T DE8787118814 T DE 8787118814T DE 3773663 T DE3773663 T DE 3773663T DE 3773663 D1 DE3773663 D1 DE 3773663D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
static semiconductor
static
memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787118814T
Other languages
German (de)
English (en)
Inventor
Ching-Te Kent Chaung
Edward Hackbarth
Denny Duan-Lee Tang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3773663D1 publication Critical patent/DE3773663D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
DE8787118814T 1987-01-15 1987-12-18 Statischer halbleiterspeicher. Expired - Lifetime DE3773663D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/003,525 US4864539A (en) 1987-01-15 1987-01-15 Radiation hardened bipolar static RAM cell

Publications (1)

Publication Number Publication Date
DE3773663D1 true DE3773663D1 (de) 1991-11-14

Family

ID=21706276

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787118814T Expired - Lifetime DE3773663D1 (de) 1987-01-15 1987-12-18 Statischer halbleiterspeicher.

Country Status (4)

Country Link
US (1) US4864539A (cg-RX-API-DMAC7.html)
EP (1) EP0284665B1 (cg-RX-API-DMAC7.html)
JP (1) JPS63184997A (cg-RX-API-DMAC7.html)
DE (1) DE3773663D1 (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4995053A (en) * 1987-02-11 1991-02-19 Hillier Technologies Limited Partnership Remote control system, components and methods
US5043939A (en) * 1989-06-15 1991-08-27 Bipolar Integrated Technology, Inc. Soft error immune memory
US5020027A (en) * 1990-04-06 1991-05-28 International Business Machines Corporation Memory cell with active write load
JP3266177B2 (ja) * 1996-09-04 2002-03-18 住友電気工業株式会社 電流ミラー回路とそれを用いた基準電圧発生回路及び発光素子駆動回路
US7078306B1 (en) 2003-03-24 2006-07-18 Integrated Device Technology, Inc. Method for forming a thin film resistor structure
US7336102B2 (en) * 2004-07-27 2008-02-26 International Business Machines Corporation Error correcting logic system
US7642813B2 (en) * 2004-07-27 2010-01-05 International Business Machines Corporation Error correcting logic system
US7921400B1 (en) 2005-07-20 2011-04-05 Integrated Device Technology, Inc. Method for forming integrated circuit device using cell library with soft error resistant logic cells
US7397692B1 (en) * 2006-12-19 2008-07-08 International Business Machines Corporation High performance single event upset hardened SRAM cell
JP7762882B2 (ja) 2020-12-23 2025-10-31 パナソニックＩｐマネジメント株式会社 モータ制御装置、モータ制御方法、および、プログラム

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2737173C2 (de) * 1977-08-18 1979-10-18 Motoren- Und Turbinen-Union Muenchen Gmbh, 8000 Muenchen Verfahren zur Kapselung eines Formkörpers aus Keramik
FR2413782A1 (fr) * 1977-12-30 1979-07-27 Radiotechnique Compelec Element de circuit integre destine aux memoires bipolaires a isolement lateral par oxyde
NL188721C (nl) * 1978-12-22 1992-09-01 Philips Nv Halfgeleidergeheugenschakeling voor een statisch geheugen.
JPS5588356A (en) * 1978-12-27 1980-07-04 Hitachi Ltd Semiconductor device
JPS55146680A (en) * 1979-04-26 1980-11-15 Fujitsu Ltd Decoding circuit
JPS564263A (en) * 1979-06-25 1981-01-17 Hitachi Ltd Semiconductor memory
JPS5841596B2 (ja) * 1980-11-28 1983-09-13 富士通株式会社 スタティック型半導体記憶装置
JPS6028076B2 (ja) * 1980-12-25 1985-07-02 富士通株式会社 半導体メモリの書込み回路
JPS6047666B2 (ja) * 1981-01-29 1985-10-23 富士通株式会社 半導体記憶装置の書込み方式
FR2522432A1 (fr) * 1982-02-26 1983-09-02 Radiotechnique Compelec Procede pour obtenir la decharge rapide d'une rangee de matrice memoire, et circuit de decharge dynamique correspondant
DE3380543D1 (en) * 1982-07-02 1989-10-12 Fujitsu Ltd Semiconductor memory devices with word line discharging circuits
DE3227121A1 (de) * 1982-07-20 1984-01-26 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zum lesen bipolarer speicherzellen
JPS5956287A (ja) * 1982-09-27 1984-03-31 Fujitsu Ltd 半導体メモリ回路
JPS59151386A (ja) * 1983-01-31 1984-08-29 Fujitsu Ltd 半導体記憶装置
JPS6089895A (ja) * 1983-10-24 1985-05-20 Matsushita Electric Ind Co Ltd 半導体記憶装置

Also Published As

Publication number Publication date
EP0284665A1 (en) 1988-10-05
US4864539A (en) 1989-09-05
JPS63184997A (ja) 1988-07-30
EP0284665B1 (en) 1991-10-09
JPH0524593B2 (cg-RX-API-DMAC7.html) 1993-04-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee