DE3714577C2 - - Google Patents
Info
- Publication number
- DE3714577C2 DE3714577C2 DE3714577A DE3714577A DE3714577C2 DE 3714577 C2 DE3714577 C2 DE 3714577C2 DE 3714577 A DE3714577 A DE 3714577A DE 3714577 A DE3714577 A DE 3714577A DE 3714577 C2 DE3714577 C2 DE 3714577C2
- Authority
- DE
- Germany
- Prior art keywords
- mass
- cresol
- mixture
- pattern
- novolak
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000203 mixture Substances 0.000 claims description 52
- 229920002120 photoresistant polymer Polymers 0.000 claims description 47
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical class CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 claims description 24
- RLSSMJSEOOYNOY-UHFFFAOYSA-N m-cresol Chemical class CC1=CC=CC(O)=C1 RLSSMJSEOOYNOY-UHFFFAOYSA-N 0.000 claims description 22
- 229920003986 novolac Polymers 0.000 claims description 22
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 19
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Natural products OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 150000002989 phenols Chemical class 0.000 claims description 9
- 239000003504 photosensitizing agent Substances 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 6
- 150000002148 esters Chemical class 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- -1 naphthoquinone diazidosulfonic acid ester Chemical class 0.000 claims description 6
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical class OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 5
- 125000001140 1,4-phenylene group Chemical group [H]C1=C([H])C([*:2])=C([H])C([H])=C1[*:1] 0.000 claims description 4
- ZDOIAPGLORMKTR-UHFFFAOYSA-N 2-Hydroxyfluorene Chemical compound C1=CC=C2C3=CC=C(O)C=C3CC2=C1 ZDOIAPGLORMKTR-UHFFFAOYSA-N 0.000 claims description 4
- YPWLZGITFNGGKW-UHFFFAOYSA-N 2-phenanthrol Chemical compound C1=CC=C2C3=CC=C(O)C=C3C=CC2=C1 YPWLZGITFNGGKW-UHFFFAOYSA-N 0.000 claims description 4
- 229930192627 Naphthoquinone Natural products 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 150000002791 naphthoquinones Chemical class 0.000 claims description 4
- WDGFFVCWBZVLCE-UHFFFAOYSA-N purpurogallin Chemical compound C1=CC=C(O)C(=O)C2=C1C=C(O)C(O)=C2O WDGFFVCWBZVLCE-UHFFFAOYSA-N 0.000 claims description 4
- 125000000882 C2-C6 alkenyl group Chemical group 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 238000009833 condensation Methods 0.000 claims description 3
- 230000005494 condensation Effects 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 3
- ZPANWZBSGMDWON-UHFFFAOYSA-N 1-[(2-hydroxynaphthalen-1-yl)methyl]naphthalen-2-ol Chemical compound C1=CC=C2C(CC3=C4C=CC=CC4=CC=C3O)=C(O)C=CC2=C1 ZPANWZBSGMDWON-UHFFFAOYSA-N 0.000 claims description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 claims description 2
- YQUQWHNMBPIWGK-UHFFFAOYSA-N 4-isopropylphenol Chemical class CC(C)C1=CC=C(O)C=C1 YQUQWHNMBPIWGK-UHFFFAOYSA-N 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- RVTNTWXIJDKOCU-UHFFFAOYSA-N azido n-diazosulfamate;naphthalene-1,4-dione Chemical compound [N-]=[N+]=NOS(=O)(=O)N=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 RVTNTWXIJDKOCU-UHFFFAOYSA-N 0.000 claims description 2
- 239000011230 binding agent Substances 0.000 claims description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 2
- 239000003054 catalyst Substances 0.000 claims description 2
- 150000004292 cyclic ethers Chemical class 0.000 claims description 2
- 150000002576 ketones Chemical class 0.000 claims description 2
- SYSQUGFVNFXIIT-UHFFFAOYSA-N n-[4-(1,3-benzoxazol-2-yl)phenyl]-4-nitrobenzenesulfonamide Chemical class C1=CC([N+](=O)[O-])=CC=C1S(=O)(=O)NC1=CC=C(C=2OC3=CC=CC=C3N=2)C=C1 SYSQUGFVNFXIIT-UHFFFAOYSA-N 0.000 claims description 2
- CBXPYEVPTTUREF-UHFFFAOYSA-N phenyl 2,4,6-trihydroxybenzoate Chemical compound OC1=CC(O)=CC(O)=C1C(=O)OC1=CC=CC=C1 CBXPYEVPTTUREF-UHFFFAOYSA-N 0.000 claims description 2
- 150000005846 sugar alcohols Polymers 0.000 claims description 2
- 229960003742 phenol Drugs 0.000 claims 4
- CFGDTWRKBRQUFB-UHFFFAOYSA-N 4-(2,4-dihydroxyphenyl)benzene-1,3-diol Chemical group OC1=CC(O)=CC=C1C1=CC=C(O)C=C1O CFGDTWRKBRQUFB-UHFFFAOYSA-N 0.000 claims 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims 1
- 150000004053 quinones Chemical class 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 12
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 9
- 229930003836 cresol Natural products 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000032050 esterification Effects 0.000 description 4
- 238000005886 esterification reaction Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- HTQNYBBTZSBWKL-UHFFFAOYSA-N 2,3,4-trihydroxbenzophenone Chemical compound OC1=C(O)C(O)=CC=C1C(=O)C1=CC=CC=C1 HTQNYBBTZSBWKL-UHFFFAOYSA-N 0.000 description 2
- CPEXFJVZFNYXGU-UHFFFAOYSA-N 2,4,6-trihydroxybenzophenone Chemical compound OC1=CC(O)=CC(O)=C1C(=O)C1=CC=CC=C1 CPEXFJVZFNYXGU-UHFFFAOYSA-N 0.000 description 2
- IXQGCWUGDFDQMF-UHFFFAOYSA-N 2-Ethylphenol Chemical compound CCC1=CC=CC=C1O IXQGCWUGDFDQMF-UHFFFAOYSA-N 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001896 cresols Chemical class 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 208000013469 light sensitivity Diseases 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- ZRDYULMDEGRWRC-UHFFFAOYSA-N (4-hydroxyphenyl)-(2,3,4-trihydroxyphenyl)methanone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=C(O)C(O)=C1O ZRDYULMDEGRWRC-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- LJCZNYWLQZZIOS-UHFFFAOYSA-N 2,2,2-trichlorethoxycarbonyl chloride Chemical compound ClC(=O)OCC(Cl)(Cl)Cl LJCZNYWLQZZIOS-UHFFFAOYSA-N 0.000 description 1
- JQCWLRHNAHIIGW-UHFFFAOYSA-N 2,8-dimethylnonan-5-one Chemical compound CC(C)CCC(=O)CCC(C)C JQCWLRHNAHIIGW-UHFFFAOYSA-N 0.000 description 1
- HXDLWJWIAHWIKI-UHFFFAOYSA-N 2-hydroxyethyl acetate Chemical compound CC(=O)OCCO HXDLWJWIAHWIKI-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 1
- QHPQWRBYOIRBIT-UHFFFAOYSA-N 4-tert-butylphenol Chemical class CC(C)(C)C1=CC=C(O)C=C1 QHPQWRBYOIRBIT-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 101100130497 Drosophila melanogaster Mical gene Proteins 0.000 description 1
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Natural products CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 1
- 101100345589 Mus musculus Mical1 gene Proteins 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 241000158147 Sator Species 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 150000001555 benzenes Chemical class 0.000 description 1
- YXVFYQXJAXKLAK-UHFFFAOYSA-N biphenyl-4-ol Chemical class C1=CC(O)=CC=C1C1=CC=CC=C1 YXVFYQXJAXKLAK-UHFFFAOYSA-N 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical class C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- REOJLIXKJWXUGB-UHFFFAOYSA-N mofebutazone Chemical group O=C1C(CCCC)C(=O)NN1C1=CC=CC=C1 REOJLIXKJWXUGB-UHFFFAOYSA-N 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- LYKRPDCJKSXAHS-UHFFFAOYSA-N phenyl-(2,3,4,5-tetrahydroxyphenyl)methanone Chemical class OC1=C(O)C(O)=CC(C(=O)C=2C=CC=CC=2)=C1O LYKRPDCJKSXAHS-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/025—Non-macromolecular photopolymerisable compounds having carbon-to-carbon triple bonds, e.g. acetylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
- C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
- C08G8/12—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with monohydric phenols having only one hydrocarbon substituent ortho on para to the OH group, e.g. p-tert.-butyl phenol
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
- C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
- C08G8/24—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with mixtures of two or more phenols which are not covered by only one of the groups C08G8/10 - C08G8/20
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
- C08K5/43—Compounds containing sulfur bound to nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61102617A JPH0654388B2 (ja) | 1986-05-02 | 1986-05-02 | ポジ型ホトレジスト組成物 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE3714577A1 DE3714577A1 (de) | 1987-11-05 |
DE3714577C2 true DE3714577C2 (en, 2012) | 1991-09-19 |
DE3714577C3 DE3714577C3 (de) | 1995-02-09 |
Family
ID=14332206
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3714577A Expired - Fee Related DE3714577C3 (de) | 1986-05-02 | 1987-04-30 | Lichtempfindliches Gemisch, Verfahren zu seiner Herstellung und seine Verwendung |
Country Status (5)
Country | Link |
---|---|
US (1) | US4906549A (en, 2012) |
JP (1) | JPH0654388B2 (en, 2012) |
KR (1) | KR900007797B1 (en, 2012) |
DE (1) | DE3714577C3 (en, 2012) |
GB (1) | GB2190090B (en, 2012) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63311350A (ja) * | 1987-06-15 | 1988-12-20 | Hitachi Ltd | 感光性組成物 |
US4873176A (en) * | 1987-08-28 | 1989-10-10 | Shipley Company Inc. | Reticulation resistant photoresist coating |
US4996122A (en) * | 1988-03-31 | 1991-02-26 | Morton International, Inc. | Method of forming resist pattern and thermally stable and highly resolved resist pattern |
US4943511A (en) * | 1988-08-05 | 1990-07-24 | Morton Thiokol, Inc. | High sensitivity mid and deep UV resist |
JP2645587B2 (ja) * | 1989-03-29 | 1997-08-25 | 富士写真フイルム株式会社 | 微細パターン形成材料及び微細パターン形成方法 |
US5069996A (en) * | 1989-07-24 | 1991-12-03 | Ocg Microelectronic Materials, Inc. | Process for developing selected positive photoresists |
US5324620A (en) * | 1989-09-08 | 1994-06-28 | Ocg Microeletronic Materials, Inc. | Radiation-sensitive compositions containing novolak polymers made from four phenolic derivatives and an aldehyde |
DE69032744T2 (de) * | 1989-09-08 | 1999-06-02 | Olin Microelectronic Chemicals, Inc., Norwalk, Conn. | Vollständig substituierte novalak-polymere enthaltende strahlungsempfindliche zusammensetzungen |
JP2571136B2 (ja) * | 1989-11-17 | 1997-01-16 | 日本ゼオン株式会社 | ポジ型レジスト組成物 |
JP3063148B2 (ja) * | 1989-12-27 | 2000-07-12 | 住友化学工業株式会社 | ポジ型レジスト組成物 |
EP0459395B1 (en) * | 1990-05-29 | 1999-08-18 | Sumitomo Bakelite Company Limited | Positive photo-sensitive resin composition |
JPH04328555A (ja) * | 1991-04-26 | 1992-11-17 | Fuji Photo Film Co Ltd | ポジ型フオトレジスト組成物 |
US5362599A (en) * | 1991-11-14 | 1994-11-08 | International Business Machines Corporations | Fast diazoquinone positive resists comprising mixed esters of 4-sulfonate and 5-sulfonate compounds |
US5346799A (en) * | 1991-12-23 | 1994-09-13 | Ocg Microelectronic Materials, Inc. | Novolak resins and their use in radiation-sensitive compositions wherein the novolak resins are made by condensing 2,6-dimethylphenol, 2,3-dimethylphenol, a para-substituted phenol and an aldehyde |
JPH06204162A (ja) * | 1992-12-28 | 1994-07-22 | Mitsubishi Electric Corp | 半導体装置の製造方法および該方法に用いられるレジスト組成物 |
US5652081A (en) * | 1995-09-20 | 1997-07-29 | Fuji Photo Film Co., Ltd. | Positive working photoresist composition |
JPH0990622A (ja) * | 1995-09-22 | 1997-04-04 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
KR101870647B1 (ko) * | 2014-07-18 | 2018-06-25 | 쇼와 덴코 가부시키가이샤 | 포지티브형 감광성 수지 조성물 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4289838A (en) * | 1972-12-14 | 1981-09-15 | Polychrome Corporation | Diazo-unsaturated monomer light sensitive compositions |
US3859099A (en) * | 1972-12-22 | 1975-01-07 | Eastman Kodak Co | Positive plate incorporating diazoquinone |
US4123279A (en) * | 1974-03-25 | 1978-10-31 | Fuji Photo Film Co., Ltd. | Light-sensitive o-quinonediazide containing planographic printing plate |
DE2616992C3 (de) * | 1976-04-17 | 1987-10-22 | Agfa-Gevaert Ag, 5090 Leverkusen | Lichtempfindliches Kopiermaterial zur Herstellung von Reliefs |
AU3870478A (en) * | 1977-08-09 | 1980-02-14 | Somar Mfg | High energy radiation cruable resist material |
US4173470A (en) * | 1977-11-09 | 1979-11-06 | Bell Telephone Laboratories, Incorporated | Novolak photoresist composition and preparation thereof |
JPS55123614A (en) * | 1979-03-16 | 1980-09-24 | Daicel Chem Ind Ltd | Photosensitive resin and positive type-photosensitive resin composition |
US4377631A (en) * | 1981-06-22 | 1983-03-22 | Philip A. Hunt Chemical Corporation | Positive novolak photoresist compositions |
US4529682A (en) * | 1981-06-22 | 1985-07-16 | Philip A. Hunt Chemical Corporation | Positive photoresist composition with cresol-formaldehyde novolak resins |
US4499171A (en) * | 1982-04-20 | 1985-02-12 | Japan Synthetic Rubber Co., Ltd. | Positive type photosensitive resin composition with at least two o-quinone diazides |
JPS59152A (ja) * | 1982-06-25 | 1984-01-05 | Hitachi Chem Co Ltd | 画像形成性樹脂組成物 |
JPS60159846A (ja) * | 1984-01-31 | 1985-08-21 | Sumitomo Chem Co Ltd | ポジ型フオトレジスト組成物 |
CA1255952A (en) * | 1983-03-04 | 1989-06-20 | Akihiro Furuta | Positive type photoresist composition |
JPS6031138A (ja) * | 1983-07-30 | 1985-02-16 | Konishiroku Photo Ind Co Ltd | 感光性組成物 |
US4551409A (en) * | 1983-11-07 | 1985-11-05 | Shipley Company Inc. | Photoresist composition of cocondensed naphthol and phenol with formaldehyde in admixture with positive o-quinone diazide or negative azide |
JPS60164740A (ja) * | 1984-02-06 | 1985-08-27 | Japan Synthetic Rubber Co Ltd | ポジ型感光性樹脂組成物 |
JPS60176034A (ja) * | 1984-02-23 | 1985-09-10 | Japan Synthetic Rubber Co Ltd | ポジ型感光性樹脂組成物 |
JPS616647A (ja) * | 1984-06-20 | 1986-01-13 | Konishiroku Photo Ind Co Ltd | ポジ型感光性平版印刷版用感光性組成物 |
JPS6180246A (ja) * | 1984-09-28 | 1986-04-23 | Nec Corp | ポジレジスト材料 |
JPS61185741A (ja) * | 1985-02-13 | 1986-08-19 | Mitsubishi Chem Ind Ltd | ポジ型フオトレジスト組成物 |
-
1986
- 1986-05-02 JP JP61102617A patent/JPH0654388B2/ja not_active Expired - Lifetime
-
1987
- 1987-04-30 DE DE3714577A patent/DE3714577C3/de not_active Expired - Fee Related
- 1987-05-01 GB GB8710397A patent/GB2190090B/en not_active Expired
- 1987-05-02 KR KR1019870004310A patent/KR900007797B1/ko not_active Expired
-
1988
- 1988-04-18 US US07/182,848 patent/US4906549A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB2190090B (en) | 1989-12-06 |
JPH0654388B2 (ja) | 1994-07-20 |
DE3714577C3 (de) | 1995-02-09 |
GB2190090A (en) | 1987-11-11 |
KR900007797B1 (ko) | 1990-10-20 |
US4906549A (en) | 1990-03-06 |
JPS62260147A (ja) | 1987-11-12 |
KR870011505A (ko) | 1987-12-23 |
GB8710397D0 (en) | 1987-06-03 |
DE3714577A1 (de) | 1987-11-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3626578C2 (en, 2012) | ||
DE3714577C2 (en, 2012) | ||
EP0244762B1 (de) | Positiv-arbeitendes lichtempfindliches Gemisch und daraus hergestelltes lichtempfindliches Aufzeichnungsmaterial | |
DE3839714C2 (en, 2012) | ||
DE3720017C2 (en, 2012) | ||
EP0243964B1 (de) | Positiv-arbeitendes lichtempfindliches Gemisch und daraus hergestelltes lichtempfindliches Aufzeichnungsmaterial | |
DE3626582C2 (en, 2012) | ||
DE3723411C2 (en, 2012) | ||
EP0301332B1 (de) | Positiv-Fotoresist-Zusammensetzungen | |
DE3123752C2 (en, 2012) | ||
EP0244763B1 (de) | Positiv-arbeitendes lichtempfindliches Gemisch und daraus hergestelltes lichtempfindliches Aufzeichnungsmaterial | |
DE3839906A1 (de) | Positiv arbeitende lichtempfindliche zusammensetzung, verfahren zu ihrer herstellung und ihre verwendung | |
DE3927693C2 (de) | Entwicklerlösung für positiv wirkende strahlungsempfindliche Gemische | |
DE3842896C2 (de) | Positiv arbeitende lichtempfindliche Zusammensetzung | |
DE68909084T2 (de) | Hochempfindlicher Resist für das mittlere und tiefe UV. | |
EP0096282A2 (de) | Lichtempfindliche Komponenten für positiv arbeitende Fotoresistmaterialien | |
DE10015742A1 (de) | Photoresist-Zusammensetzung, Verfahren zu ihrer Herstellung und Verfahren zur Ausbildung eines Musters während der Halbleiterbearbeitung unter Verwendung der Photoresist-Zusammensetzung | |
EP0563663B1 (de) | 1,2-Naphthochinon-2-diazid-sulfonsäureester, damit hergestelltes strahlungsempfindliches Gemisch und strahlungsempfindliches Aufzeichnungsmaterial | |
DE69729541T2 (de) | Verwendung eines Lösungsmittelgemisches zur Walzenbeschichtung einer strahlungsempfindlichen Zusammensetzung | |
DE69821304T2 (de) | Strahlungsempfindliche Harzzusammensetzung | |
DE69501302T2 (de) | Fotoempfindliche Harzzusammensetzung und Verfahren zur Herstellung von Fotoresistmustern | |
JPS6327836A (ja) | ポジ型ホトレジスト組成物 | |
DE10201452A1 (de) | Positiv-Fotoresist-Zusammensetzung | |
US5100758A (en) | Positive-working photoresist composition containing quinone diazide compound, novolak resin and alkyl pyruvate solvent | |
JP2624541B2 (ja) | 新規なポジ型感光性組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
D2 | Grant after examination | ||
8363 | Opposition against the patent | ||
8366 | Restricted maintained after opposition proceedings | ||
8305 | Restricted maintenance of patent after opposition | ||
D4 | Patent maintained restricted | ||
8339 | Ceased/non-payment of the annual fee |